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835. High temperature substrate holder
328
Classified Abstracts 831--845
Vacuum Applications 30.
Evaporating
and S p u t t e r i n g
30 : 33 831. Time-of-flight method of determining velocities of sputtered atoms. U.S.A. A method is described whereby velocities of sputtered atoms are determined by pulsing a target and measuring the transit time of sputtered atoms. The method permits determination of the distribution of velocities of sputtered atoms. The target pulse generator and the problems involved in pulsing a target are discussed. The photon-counting system used for determining transit times is described and a typical set of data is presented. (Authors) R. V. Stuart, et. al., Rev. Sci. Instram., 34 (4), April 1963, 425-429. 30 832. Preparation of evaported silicon films. U.S.A. A simple method for preparing evaporated thin films of silicon from an etched silicon filament is described. The method of mounting and processing the filament ensures low gas evolution during evaporation and makes possible the deposition of silicon films in a vacuum of ~ 5 × 10-1° torr. (Authors) B. F. Kilgore and R. W. Roberts, Rev. Sci. Instrum., 34 (1), Jan. 1963, 11-12. 30 : 41 833. Properties of evaporated Cu films vary with deposition eonditinns. (U.S.A.) Anon., Electron Design, 11 (5), March 1963, 83. 30 : 41 834. Method for vacuum deposition of refractory metal films. U.S.A. A simple method for deposition of refractory metal thin films, which exploits the fact that a localized high resistance zone in an electrical conductor may provide a corresponding thermal gradient with its extremes related to current density, is described. A molten web of metal is formed at the junction of two conductors on passing a suitable current, and on increasing the current density, is evaporated from the web. Exceptional purity is claimed for the films since no contaminants are introduced at the source, and excellent films of tungsten, molybdenum and tantalum have been obtained. D.A.P.
30 : 33 : 41 839. Magnetic anisotropy in evaporated thin films containing aluminium. Great Britain. Evaporations were carried out at a pressure of 10 -4 torr on to a glass substrate held at 200°C. The rate of deposition was of the order of 900 A,/min and the final thickness of the film approximately 2000A. The alloy composition of the film was controlled by evaporating the two materials simultaneously from two sources. The geometry of the arrangement was such that for the film substrate position where the iron was deposited at normal incidence, the aluminium was incident at an angle of 30 ° . Films prepared in this manner had an induced easy axis direction in the film plane, orthogonal to the line joining the film to the aluminium source. The ability to govern easy axis direction in evaporated films using an oblique incidence aluminium beam suggests that such a beam could be used to reduce the easy axis dispersion usually found in large area films, w.J.s. J. A. Hodges, Nature, 198 (4879), 4 May 1963, 471. 30 : 56 840. Aluminized cathode ray tubes. Great Britain. Mullard Ltd have announced a new method of deposition, by which aluminium films in cathode-ray tube screens can be made up to 30 per cent thinner than by previous techniques. This permits the advantages of aluminizing to be obtained in tubes using accelerating potentials as low as 3 kV. (Author modified) Anon., Electron. Equip. News, 5, May 1963, 102.
841. Thin film production performed continuously. Anon., Electronics, 36 (16), 19 April 1963, 70-76.
30 : 41 : 56 (U.S.A.)
30 : 33 : 56
842. Digital thin film memories. (U.S.A.) I.E.E. Internat. Solid State Circuit Conf. 1963. 30 : 33 : 56 843. Pulse measurements on thin magnetic films. (Germany). H. J. Harloff and W. Kayser, Elektron Rechenanl., 3 (3), 17 Jan. 1963, 113-118. (Available as Centre Library Translation No. 649).
J. L. Nicholson, Rev. Sci. Instrum., 34 (1), Jan. 1963, 118. 30 835. High temperature substrate holder. (U.S.A.) J. G. Simmons and D. E. Moister, Rev. Sci. Instrum., 34 (2), Feb. 1963, 199-200. 30 836. Visual monitoring during vacuum evaporations (U.S.A.) M. Briggs-Smith, Rev. Sci. Instrum., 34 (2), Feb. 1963, 191. 30 : 56 837. Resonance technique for non-destructive readout of thin magnetic films. H. D. Toombs and T. E. Hasty, Proc. Inst. Rad. Engrs., 50, June 1962, 1526. 30 : 41 838. High vacuum deposition of cesium. (U.S.A.) F. G. Alien and G. W. Gobeli, Rev. Sci. Instrum., 34 (2), Feb. 1963, 184-185.
30 : 56 844. Thin film cyrtron circuits. (U.S.A.) N. H. Meyers, Proc. Inst. Rad. Engrs., 50, Dec. 1962, 2452-2464. 30 : 56 845. Thin film transistors with metal base. U.S.A. Several letters from different laboratories reporting attempts to make transistor-like devices in which a metal layer is used as the base electrode. The following structures are discussed: (1) An aluminium base 1 0 0 ~ thick, sandwiched between aluminium emitter and collector layers, but separated from them by aluminium oxide barrier layers, 20/~ and 200/~ thick, respectively. (2) A base layer of copper, electroplated on to germanium, with germanium emitter and collector. (3) An aluminium base 100 A thick, deposited on to germanium, which acts as collector, with a gold emitter layer separated from the base by a 2 0 A layer of aluminium oxide. (4) A gold base layer 100 ~ thick evaporated on to n-type silicon, which acts as collector, with a 40 A layer of silicon monoxide as barrier between the base and a liquid mercury emitter. There is a brief discussion of the quantum-mechanical tunnelling theory of
Classified Abstracts 831--845
Vacuum Applications 30.
Evaporating
and S p u t t e r i n g
30 : 33 831. Time-of-flight method of determining velocities of sputtered atoms. U.S.A. A method is described whereby velocities of sputtered atoms are determined by pulsing a target and measuring the transit time of sputtered atoms. The method permits determination of the distribution of velocities of sputtered atoms. The target pulse generator and the problems involved in pulsing a target are discussed. The photon-counting system used for determining transit times is described and a typical set of data is presented. (Authors) R. V. Stuart, et. al., Rev. Sci. Instram., 34 (4), April 1963, 425-429. 30 832. Preparation of evaported silicon films. U.S.A. A simple method for preparing evaporated thin films of silicon from an etched silicon filament is described. The method of mounting and processing the filament ensures low gas evolution during evaporation and makes possible the deposition of silicon films in a vacuum of ~ 5 × 10-1° torr. (Authors) B. F. Kilgore and R. W. Roberts, Rev. Sci. Instrum., 34 (1), Jan. 1963, 11-12. 30 : 41 833. Properties of evaporated Cu films vary with deposition eonditinns. (U.S.A.) Anon., Electron Design, 11 (5), March 1963, 83. 30 : 41 834. Method for vacuum deposition of refractory metal films. U.S.A. A simple method for deposition of refractory metal thin films, which exploits the fact that a localized high resistance zone in an electrical conductor may provide a corresponding thermal gradient with its extremes related to current density, is described. A molten web of metal is formed at the junction of two conductors on passing a suitable current, and on increasing the current density, is evaporated from the web. Exceptional purity is claimed for the films since no contaminants are introduced at the source, and excellent films of tungsten, molybdenum and tantalum have been obtained. D.A.P.
30 : 33 : 41 839. Magnetic anisotropy in evaporated thin films containing aluminium. Great Britain. Evaporations were carried out at a pressure of 10 -4 torr on to a glass substrate held at 200°C. The rate of deposition was of the order of 900 A,/min and the final thickness of the film approximately 2000A. The alloy composition of the film was controlled by evaporating the two materials simultaneously from two sources. The geometry of the arrangement was such that for the film substrate position where the iron was deposited at normal incidence, the aluminium was incident at an angle of 30 ° . Films prepared in this manner had an induced easy axis direction in the film plane, orthogonal to the line joining the film to the aluminium source. The ability to govern easy axis direction in evaporated films using an oblique incidence aluminium beam suggests that such a beam could be used to reduce the easy axis dispersion usually found in large area films, w.J.s. J. A. Hodges, Nature, 198 (4879), 4 May 1963, 471. 30 : 56 840. Aluminized cathode ray tubes. Great Britain. Mullard Ltd have announced a new method of deposition, by which aluminium films in cathode-ray tube screens can be made up to 30 per cent thinner than by previous techniques. This permits the advantages of aluminizing to be obtained in tubes using accelerating potentials as low as 3 kV. (Author modified) Anon., Electron. Equip. News, 5, May 1963, 102.
841. Thin film production performed continuously. Anon., Electronics, 36 (16), 19 April 1963, 70-76.
30 : 41 : 56 (U.S.A.)
30 : 33 : 56
842. Digital thin film memories. (U.S.A.) I.E.E. Internat. Solid State Circuit Conf. 1963. 30 : 33 : 56 843. Pulse measurements on thin magnetic films. (Germany). H. J. Harloff and W. Kayser, Elektron Rechenanl., 3 (3), 17 Jan. 1963, 113-118. (Available as Centre Library Translation No. 649).
J. L. Nicholson, Rev. Sci. Instrum., 34 (1), Jan. 1963, 118. 30 835. High temperature substrate holder. (U.S.A.) J. G. Simmons and D. E. Moister, Rev. Sci. Instrum., 34 (2), Feb. 1963, 199-200. 30 836. Visual monitoring during vacuum evaporations (U.S.A.) M. Briggs-Smith, Rev. Sci. Instrum., 34 (2), Feb. 1963, 191. 30 : 56 837. Resonance technique for non-destructive readout of thin magnetic films. H. D. Toombs and T. E. Hasty, Proc. Inst. Rad. Engrs., 50, June 1962, 1526. 30 : 41 838. High vacuum deposition of cesium. (U.S.A.) F. G. Alien and G. W. Gobeli, Rev. Sci. Instrum., 34 (2), Feb. 1963, 184-185.
30 : 56 844. Thin film cyrtron circuits. (U.S.A.) N. H. Meyers, Proc. Inst. Rad. Engrs., 50, Dec. 1962, 2452-2464. 30 : 56 845. Thin film transistors with metal base. U.S.A. Several letters from different laboratories reporting attempts to make transistor-like devices in which a metal layer is used as the base electrode. The following structures are discussed: (1) An aluminium base 1 0 0 ~ thick, sandwiched between aluminium emitter and collector layers, but separated from them by aluminium oxide barrier layers, 20/~ and 200/~ thick, respectively. (2) A base layer of copper, electroplated on to germanium, with germanium emitter and collector. (3) An aluminium base 100 A thick, deposited on to germanium, which acts as collector, with a gold emitter layer separated from the base by a 2 0 A layer of aluminium oxide. (4) A gold base layer 100 ~ thick evaporated on to n-type silicon, which acts as collector, with a 40 A layer of silicon monoxide as barrier between the base and a liquid mercury emitter. There is a brief discussion of the quantum-mechanical tunnelling theory of