Classified abstracts 86--98 37 : 39 : 41 86. Laboratory vacuum furnace with programmed control for growing silicon carbide crystals. (USSR) The control circuit ensures maintenance of temperature within 2 - 5 ° C of any set value in the range of 2350-2550°C. This is achieved by a comparison of the light emitted by the wall of the heater with that from a standard source (S.I-8 radiator). The power required to operate the furnace is 25 k W and the residual gas pressure is less than 10 5 tort. (USSR) I G Pichugin et al, PlantLab, (10), 1964, 1276-1278. 37 : 33 87. Large electron beam furnace. (Great Britain) Anon, Nuclear Engng, 9 (101), Oct 1964, 377. 37 : 38 88. Activation analysis equipment. (Great Britain) Anon, Nuclear Engng, 9 (97), June 1964, 227. 37 89. Vacuum furnace loader. (Great Britain) Anon, Nuclear Engng, 9 (96), May 1964, 165. 37 90. Electron beam furnace. (Great Britain) Anon, Engineer, 218 (5665), 21 Aug 1964, 272. 37 91. Vacuum research furnace for Euratom. (Great Britain) Anon, Engineer, 217 (5654), 5 June 1964, 960. 37 92. Mould casting vacuum furnace. (Great Britain) Anon, Engineer, 217 (5657), 26 June 1964, 1080.
38. Distillation, organic chemistry, isotopic gas analysis 38 Activation analysis. See Abstr. No. 88.
39. Miscellaneous applications 39 Laboratory vacuum furnace with programmed control for growing silicon carbide crystals. See Abstr. No. 86. 39 93. Method of amalgamating contact surfaces treated in sealed glass bulbs. (USSR) The contact surfaces are first cleaned and then covered with palladium at 400-500°C and 10 ~ torr. The bulb is next filled with pure hydrogen at 110 torr and the assembly heated for 50-90 rain at 475°C. The hydrogen is then pumped out and mercury admitted through a suitable shutter followed by hydrogen at 10-12 atmospheres. N N Morozov and A I Drukmakher, Patent No. 158343 (USSR),
Bullethl No. I, 19 Dee 1963. 94. Vacuum
chamber
for
IP-4M
mechanical test
39 : 34 installation.
41. Metals and alloys 41 The behaviour of iodine in graphite. See Abstr. No. l 0. 41 Manganese vapour pressures in equilibrium with manganese-ironnickel solid solutions. See Abstr. No. 35. 41 Method of testing the barium content of tubular gas absorbers. See Abstr. No. 47. 41 Method of soldering vacuum steel pipes. See Abstr. No. 60. 41 Electron microscope study of the vacuum condensates of copper. See Abstr. No. 64. 41 Dependence of rate of growth of monocrystalline germanium layers on orientation of substrate and conditions of crystallization in a gaseous medium. See Abstr. No. 67. 41 Superconducting thin films of niobium, tantalum, tantalum nitride, tantalum carbide and niobium nitride. See Abstr. No. 69. 41 On a method of obtaining single crystal (epitaxial) films. See Abstr. No. 70. 41 The direct evaporation of alloys. See Abstr. No. 72. 41 Thickness measurement by ultraviolet visible interference method of silicon dioxide layers deposited on polished silicon wafers. See Abstr. No. 73. 41 Epitaxial growth of silicon carbide. See Abstr. No. 74. 41 Surface potentials of nitrogen on individual crystal faces of tungsten. See Abstr. No. 83. 41 Laboratory vacuum furnace with programmed control for growing silicon carbide crystals. See Abstr. No. 86. 41 Low energy diffraction studies of (100) and (111) surfaces of semiconducting diamond. See Abstr. No. 100. 41 : 30 95. Study of copper-tellurium system in thin films. (USA) R V Baranova and Z G Pinsker, Soviet Phys Cryst, 9 (1), Aug 1964, 83-85. English translation of Russian original in Kristallografiya,
9 (1), Jan 1964, 104-106.
(USSR)
41 : 30 96. Structure of thin GaSb films in the amorphous state. (USA) A G Mikolaichuk and Y I Dutchak, Soviet Phys Cryst, 9 (1), Aug 1964, 86-87. English translation of Russian original in Kristallo-
(USSR)
grafiya, 9 (1), Jan 1964, 106-108. (USSR)
A small v a c u u m chamber has been designed to enable investigations on structural changes taking place during creep of materials at high temperature and reduced ambient pressure. The chamber forms an accessory to the mechanical test installation 1P-4 M. By means of an oil vapour diffusion p u m p working in conjunction with a fore v a c u u m pump, a pressure of 10 3 torr is maintained in the chamber in which the material is undergoing creep at temperatures ranging from 300-1000°C. (USSR) C Ya Kozyrsky and V A Kononenko, Plant Lab, (10), 1964, 1263-1264.
41 : 33 97. Utilization of rhenium and rhenium alloys in electron vacuum tubes. (Germany) A comprehensive survey of the physical, chemical and mechanical properties of r h e n i u m and s o m e of its alloys with W, Ta and Cr is given, special attention being paid to possible application in the field of v a c u u m tube development. It seems likely that the present rate of c o n s u m p t i o n of r h e n i u m in the chemical industry both as catalysor and corrosion resistant material will undergo sufficient expansion in the not too distant future to bring the cost down and render the application of r h e n i u m and its alloys (more especially those containing tungsten) in v a c u u m tube commercially attractive. Bibliography 32 items. J W Kotowaki and K M Tischer, Vak Technik, 13 (7), Oct 1964,
IV. Materials and techniques used in vacuum technology
214-220.
42. Glass, ceramics and refractory oxides 42
40. Gases and vapours 40 Theory of adsorption of the isotopic hydrogen molecules at low temperatures. See Abstr. No. 9. 40 Absorption of hydrogen by silver-palladium alloys. See Abstr. No. 12. 40 Some applications for neon photocell units. See Abstr. No. 43. 48
The critical surface tension of glass. See Abstr. No. 17. 42 Vacuum study of optical properties of thin films of refractory metals. See Abstr. No. 45. 42 : 33 98. Destruction of ceramic and glass by ion bombardment. ( U S S R ) Cathodic atomization m a y occur in poorly conducting ceramics