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992. Measurement of thickness of thin films used in electron microscopy
Classified
abstracts
990-l
003
free electrons of surface ions of crystalline lattice transferred into the defect state. The relatation between the variations in electron concentration and composition of evaporating crystal is accounted as a result of generation of electrically active vacances of both components. The expressions are obtained for the concentration of vacances in the bulk and on surface of evaporating crystal in dependence on its basic parameters. The experimental data on evaporation of A”BV’ compounds are considered on the basis of the obtained expressions. G Ya Pikus and G E Chayka, Ukr Fir Zh, 18 (6), 1973, 933-945 (in Russian). 990. Electron diffraction investigations of structure films of germanium telluride and selenide. (USSR)
30 of amorphous
Using the method of electron diffraction, short-range order is investigated in amorphous films of GeTe and GeSe prepared by thermal and laser evaporation in vacuum. Yu G Poltavtsev and V P Zakharov, Kristallograf, 18 (3), 1973, 605608 (in Russian). 991. The dosing device for explosion evaporation
30 of thin films. (Poland)
Construction of a dosing device for supply of determined doses of starting material for explosion thermal evaporation of cermets in high vacuum is described. J Wilk, Pr Nauk Inst Technol Elektron Polish). 992. Measurement
P Wr, No 9, 1973, 69-72
(in
30 of thickness of thin films used in electron microscopy
(Czechoslovakia) A simple optical interferometric method for measurement of absolute thickness of thin films, prepared by vacuum evaporation and used in electron microscopy, is described. M Molcik, Jemna Mech Optika, 993. An apparatus coatings. (USSR)
18 (I), 1973, 18-19 (in Czech).
for determination
30 of the deposition rate of vacuum
Rotations of the easy axis as a function of the effective anistropy of thin ferromagnetic films cut into narrow stripes are reported. The specimens were prepared by evaporation in vacuum IOmh torr of Ni-Fe-Co and Ni-Fe-MO compositions onto optically flat glass plates in magnetic field. (Poland) Z Sczaniecki et al, Phys Stat Sol (a), 18 (2), 1973, K 107-K I IO. 30 997. An ellipsometric method for measurement
of dispersion and thick-
ness of transparent films on metallic substrates. (USSR) A new ellipsometric method for measurement of thickness and refraction index dispersion of thin transparent films on metallic substrates is described. Thickness and dispersion of ZnS thin films deposited in vacuum 10m5 torr on antimony coated glass is measured using the described ellipsometric method. I N Shklyarevskiy et al, Optika Spektroskop, 33 (6), 1972, I 157-I 161 (in Russian). 30 998. Absorption of light in pyrargirite and its amorphous films. (USSR)
Absorption of light in the region 0.4 to 25 pm is investigated in single crystal Ag,SbS, and its amorphous films, prepared by evaporation in vacuum 5 x IO-’ torr on glass substrates kept at room temperature. E L Zorina Russian).
et al, Optika
Spektroskop,
33 (5),
1972, 921-928
and electric properties
30 of copper selenide thin films.
(USSR) Using the methods of electron diffraction and microscopy, structure of Cu2Se thin films of near stoichiometric composition is investigated. The films of CuzSe have been prepared by evaporation of Cu$e from a molybdenum boat in vacuum 10m5 torr on glass and NaCl and KCI cleavages. It is found that the tetragonal modification is stable in polycrystalline and single crystal films with thickness above 400 8, at room temperature. At temperatures above 400°K the tetragonal modification changes into cubic one. The cubic modification of CuzSe is stable at room temperature in thin films with thickness less than 400 A. A peak, connected with the phase transformation, is observed on the temperature dependence of electrical resistance of the films.
30 of clean films
999. An analysis of electron-ion methods of preparation of metals. (USSR)
An analysis of electron-ion methods of deposition of metals is presented, General requirements to systems for preparation of films of refractory metals with properties approximating the bulk properties are formulated. V P Belevskiy et al, Prib Tekh Eksper, No 5, 1973, 182-185 (in
1000. Recovery of quartz resonators used for measurement and deposition rate of thin films. (USSR)
30 of thickness
A method for recovery of quartz resonators used for measurement of thickness and deposition rate of films is described. The method is based on deposition of a photoresist film on the electrode before measurement. After finishing the working cycle of the resonator the photoresist film is removed together with the deposited film of investigated substance. B Sh Berenshteyn I85 (in Russian).
and V S Bobrikov,
Prib Tekh Eksper,
No 5, 1973,
1001. Investigation of micromorphology of autoepitaxial arsenide, the dependence on substrate orientation. (USSR)
30 gallium
Using an optical microscope, microinterferometer and electron microscope, the relief of growth surface of autoepitaxial gallium arsenide, grown in an open iodide system, is investigated in dependence on substrate orientation. L G Lavrenteva
et al, Izv VUZ Fiz, No 10, 1973, 148-l 50 (in Russian).
30 1002. Regularities of structure formation of films at vacuum evaporation of some pure metals and fractionating copper alloys. (USSR)
Using a transmission electron microscope, phase composition is investigated of films prepared by evaporation of some pure metals and fractionating copper alloys in vacuum on cleaved (100) NaCl substrates. M V Belous et al, Izv VUZ Fiz, No IO, 1973, 25-31 (in Russian).
A N Kogut et al, Izv VUZ Fiz, No 8, 1973, 90-94 (in Russian). 995. Structural changes process. (Germany)
of amorphous
germanium
30 in the annealing
Using the electron diffraction method, structural changes during the annealing process are investigated in amorphous germanium films about 1000 A thick and prepared by evaporation in a high vacuum system. T Satow, Phy.r Stat Sol (a), 18 (2), 1973, K 147-K 150. 324
(in
Russian).
An apparatus for determination of the high deposition rates of vacuum coatings of metals with high saturation vapour pressure is described. The apparatus is based on determination of critical temperature of substrate, at which condensation of film from the molecular beam begins. The critical temperature is determined with the aid of a dielectric surface with variable temperature and the passage of electric current over the dielectric surface with condensing film indicates the beginning of condensation at critical temperature. The temperature of the measuring dielectric surface is measured with the aid of a thermocouple. Calibration curves for determination of the deposition rate of zinc and cadmium on glass and mica in dependence on the critical temperatures are presented, The apparatus measures reliably the deposition rate in the range 0.3 to 200 pm/min. I L Roykhl et al, Zavod Lab, 38 (1 l), 1972, 1401-1402 (in Russian). 994. Structure
30 film on its
996. Effect of narrow stripe cutting of a thin ferromagnetic easy axis orientation. (Germany)
1003. Electron diffraction study of the local atomic amorphous iron and nickel films. (Germany)
arrangement
30 in
Thin films of amorphous iron and nickel have been prepared by low-temperature condensation in vacuum 10m6 torr, and a transmission electron diffraction study of these films has been undertaken. It is concluded that the atomic arrangement in amorphous iron and nickel is represented by the dense random packed structure. (Japan) T Ichikawa, Phys Stat Sol (a), 19 (2), 1973, 707-7 16.
abstracts
990-l
003
free electrons of surface ions of crystalline lattice transferred into the defect state. The relatation between the variations in electron concentration and composition of evaporating crystal is accounted as a result of generation of electrically active vacances of both components. The expressions are obtained for the concentration of vacances in the bulk and on surface of evaporating crystal in dependence on its basic parameters. The experimental data on evaporation of A”BV’ compounds are considered on the basis of the obtained expressions. G Ya Pikus and G E Chayka, Ukr Fir Zh, 18 (6), 1973, 933-945 (in Russian). 990. Electron diffraction investigations of structure films of germanium telluride and selenide. (USSR)
30 of amorphous
Using the method of electron diffraction, short-range order is investigated in amorphous films of GeTe and GeSe prepared by thermal and laser evaporation in vacuum. Yu G Poltavtsev and V P Zakharov, Kristallograf, 18 (3), 1973, 605608 (in Russian). 991. The dosing device for explosion evaporation
30 of thin films. (Poland)
Construction of a dosing device for supply of determined doses of starting material for explosion thermal evaporation of cermets in high vacuum is described. J Wilk, Pr Nauk Inst Technol Elektron Polish). 992. Measurement
P Wr, No 9, 1973, 69-72
(in
30 of thickness of thin films used in electron microscopy
(Czechoslovakia) A simple optical interferometric method for measurement of absolute thickness of thin films, prepared by vacuum evaporation and used in electron microscopy, is described. M Molcik, Jemna Mech Optika, 993. An apparatus coatings. (USSR)
18 (I), 1973, 18-19 (in Czech).
for determination
30 of the deposition rate of vacuum
Rotations of the easy axis as a function of the effective anistropy of thin ferromagnetic films cut into narrow stripes are reported. The specimens were prepared by evaporation in vacuum IOmh torr of Ni-Fe-Co and Ni-Fe-MO compositions onto optically flat glass plates in magnetic field. (Poland) Z Sczaniecki et al, Phys Stat Sol (a), 18 (2), 1973, K 107-K I IO. 30 997. An ellipsometric method for measurement
of dispersion and thick-
ness of transparent films on metallic substrates. (USSR) A new ellipsometric method for measurement of thickness and refraction index dispersion of thin transparent films on metallic substrates is described. Thickness and dispersion of ZnS thin films deposited in vacuum 10m5 torr on antimony coated glass is measured using the described ellipsometric method. I N Shklyarevskiy et al, Optika Spektroskop, 33 (6), 1972, I 157-I 161 (in Russian). 30 998. Absorption of light in pyrargirite and its amorphous films. (USSR)
Absorption of light in the region 0.4 to 25 pm is investigated in single crystal Ag,SbS, and its amorphous films, prepared by evaporation in vacuum 5 x IO-’ torr on glass substrates kept at room temperature. E L Zorina Russian).
et al, Optika
Spektroskop,
33 (5),
1972, 921-928
and electric properties
30 of copper selenide thin films.
(USSR) Using the methods of electron diffraction and microscopy, structure of Cu2Se thin films of near stoichiometric composition is investigated. The films of CuzSe have been prepared by evaporation of Cu$e from a molybdenum boat in vacuum 10m5 torr on glass and NaCl and KCI cleavages. It is found that the tetragonal modification is stable in polycrystalline and single crystal films with thickness above 400 8, at room temperature. At temperatures above 400°K the tetragonal modification changes into cubic one. The cubic modification of CuzSe is stable at room temperature in thin films with thickness less than 400 A. A peak, connected with the phase transformation, is observed on the temperature dependence of electrical resistance of the films.
30 of clean films
999. An analysis of electron-ion methods of preparation of metals. (USSR)
An analysis of electron-ion methods of deposition of metals is presented, General requirements to systems for preparation of films of refractory metals with properties approximating the bulk properties are formulated. V P Belevskiy et al, Prib Tekh Eksper, No 5, 1973, 182-185 (in
1000. Recovery of quartz resonators used for measurement and deposition rate of thin films. (USSR)
30 of thickness
A method for recovery of quartz resonators used for measurement of thickness and deposition rate of films is described. The method is based on deposition of a photoresist film on the electrode before measurement. After finishing the working cycle of the resonator the photoresist film is removed together with the deposited film of investigated substance. B Sh Berenshteyn I85 (in Russian).
and V S Bobrikov,
Prib Tekh Eksper,
No 5, 1973,
1001. Investigation of micromorphology of autoepitaxial arsenide, the dependence on substrate orientation. (USSR)
30 gallium
Using an optical microscope, microinterferometer and electron microscope, the relief of growth surface of autoepitaxial gallium arsenide, grown in an open iodide system, is investigated in dependence on substrate orientation. L G Lavrenteva
et al, Izv VUZ Fiz, No 10, 1973, 148-l 50 (in Russian).
30 1002. Regularities of structure formation of films at vacuum evaporation of some pure metals and fractionating copper alloys. (USSR)
Using a transmission electron microscope, phase composition is investigated of films prepared by evaporation of some pure metals and fractionating copper alloys in vacuum on cleaved (100) NaCl substrates. M V Belous et al, Izv VUZ Fiz, No IO, 1973, 25-31 (in Russian).
A N Kogut et al, Izv VUZ Fiz, No 8, 1973, 90-94 (in Russian). 995. Structural changes process. (Germany)
of amorphous
germanium
30 in the annealing
Using the electron diffraction method, structural changes during the annealing process are investigated in amorphous germanium films about 1000 A thick and prepared by evaporation in a high vacuum system. T Satow, Phy.r Stat Sol (a), 18 (2), 1973, K 147-K 150. 324
(in
Russian).
An apparatus for determination of the high deposition rates of vacuum coatings of metals with high saturation vapour pressure is described. The apparatus is based on determination of critical temperature of substrate, at which condensation of film from the molecular beam begins. The critical temperature is determined with the aid of a dielectric surface with variable temperature and the passage of electric current over the dielectric surface with condensing film indicates the beginning of condensation at critical temperature. The temperature of the measuring dielectric surface is measured with the aid of a thermocouple. Calibration curves for determination of the deposition rate of zinc and cadmium on glass and mica in dependence on the critical temperatures are presented, The apparatus measures reliably the deposition rate in the range 0.3 to 200 pm/min. I L Roykhl et al, Zavod Lab, 38 (1 l), 1972, 1401-1402 (in Russian). 994. Structure
30 film on its
996. Effect of narrow stripe cutting of a thin ferromagnetic easy axis orientation. (Germany)
1003. Electron diffraction study of the local atomic amorphous iron and nickel films. (Germany)
arrangement
30 in
Thin films of amorphous iron and nickel have been prepared by low-temperature condensation in vacuum 10m6 torr, and a transmission electron diffraction study of these films has been undertaken. It is concluded that the atomic arrangement in amorphous iron and nickel is represented by the dense random packed structure. (Japan) T Ichikawa, Phys Stat Sol (a), 19 (2), 1973, 707-7 16.