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A hybrid repeater using integrated circuits
WORLD ABSTRACTS ON MICROELECTRONICS AND RELIABILITY
System design in MOS/LSI. V. T. HAMVAS, Design Electron., April-May (1971), p. 57. Not long ago the concept of large-scale integration was nothing more than theory or an expensive hobby. However, by now most of the technological problems have been resolved and
new improved technologies are on their way. Clearly, the time has arrived for wide commercial utilization of LSI technologists, M O S / L S I in particular, as MOS circuits by nature are more suitable for large-scale integration than their bipolar counterparts.
6. M I C R O E L E C T R O N I C S - - C O M P O N E N T S ,
Application of sputtering in the fabrication of semiconductor devices. W. H. LEGAT and K. H. TIEFERT, Solid St. Technol., December (1970), p. 54. The technology involved in forming semiconductor to metal contacts, and connections to the semiconductor package are discussed. Current practices are reviewed. Two techniques are treated in detail. One involves the sequential sputtering of titanium, platinum and gold to provide electrical connection between the aluminum interconnections and the beam leads. The other technique makes use of platinum silicide for the semiconductor metal contact followed by the same sputtering sequence of titanium, platinum and gold.
FET cascode technique optimizes differential amplifier performance. D. C. WYLAND,Electronics, 18 January (1971), p. 81. Low-cost FETs afford breakdown voltage protection, while common mode rejection ratio and other circuit parameters can be improved by a factor of 100 without closely matched bipolar transistors or expensive components. Spinel m a y m a k e MOS faster than TZL. R. H. CUSHMAN,EDN, 15 January (1971), p. 35. Technology leaders' interest in silicon-on-spinel could portend widespread shifts in circuit technology, affecting logic, microwave and optoelectronics.
Silicon wafer technology---state of the art. J. T. LAW, Solid St. Technol., January (1971), p. 25. Two- to three-inch diameter silicon crystals with dislocation densities less than 1000 cm -z can now be fabricated on a production basis. These crystals are typically grown from 4000-8000 g melts. Slicing techniques, using I.D. blades, have a capability of 35 in. dia. Above this size, band or wire slicing is necessary. After a lapping and a them-thinning operation, several polishing methods can be used to produce a fiat, work-damage-free surface. Of these, the most effective is an alkaline slurry system yielding good results which are independent of the conductivity, type and resistivity of the wafer. A hybrid repeater using integrated circuits. R. C. FISCHER, Automat. Elec. Tech. J., January (1971), p. 197. Four-wire circuits secure transmission gains in the simplest possible m a n n e r - - b y providing a separate pair of conductors for each direction of transmission. In designing a repeater for two-wire circuits, the engineer tries to achieve the same effect--generally using either the "negative-impedance" or the "hybrid" approach. In this paper these approaches are briefly described and
309
SYSTEMS AND EQUIPMENTS
compared. A hybrid repeater is then described which employs solid-state techniques to achieve maximum dependability and compactness (especially important as trunk groups increase in size). Also described is a repeater test set designed specifically to test this new repeater. LSI tester does all things to all arrays. S. W. FIELDS, Electronics, 18 January (1971), p. 109. Modular system handles functional, parametric tests of bipolar or M O S circuits under computer control. EBS amplifiers debut. S. EDELMAN, Electron. Engnr, February (1971), p. 52. A new type of electron device is about to hit the market. Although under study for quite some time by several companies, Watkins-Johnson has taken the lead and will be first on the market with an EBS (electron-bombarded semiconductor) amplifier. The EBS makes use of a long-known phenomenon: a modulated electron beam can control the current in a semiconductor such as a reverse-biased pn junction. Reduced to practice, this principle leads to a family of microwave components each member of which has advantages over its conventional equivalent (high efficiency, broadband amplifiers; pulse and harmonic generators; real-times amplers; switches; and so forth).
Successful matchmakers: mlnlconnectors for digital ICs. R. HARWOOD, Electronics, 15 February ( 1971), p. 70. Performance of high-speed digital systems can suffer from circuit-to-connector mismatches, which can cause serious energy losses. The problem cannot always be solved by adapting existing r.f. and microwave connectors. But pin-and-socket units designed for the job are small enough to accommodate IC packages and can handle 10 gHz.
Double-diffused MOS transistor achieves microwave gain. T. P. CAUGE, J. KocsIs, H. J. SIGG and G. D. VENDELIN,Electronics, 15 February (1971), p. 99. MOS devices with 1 vt channels made by two-stage diffusion rival discrete, bipolar microwave transistors in performance and also promise a fivefold increase in digital logic speeds.
Gate noise in MOS FET's at moderately high frequencies. J. W. HASLETT and F. N. TROFIMENKOFF, Solid-St. Electron. 14 (1971), p. 239. A lumped model approach is used to evaluate the drain noise, gate noise and correlation between gate and drain noise for an n-channel enhancement M O S field-effect transistor.
System design in MOS/LSI. V. T. HAMVAS, Design Electron., April-May (1971), p. 57. Not long ago the concept of large-scale integration was nothing more than theory or an expensive hobby. However, by now most of the technological problems have been resolved and
new improved technologies are on their way. Clearly, the time has arrived for wide commercial utilization of LSI technologists, M O S / L S I in particular, as MOS circuits by nature are more suitable for large-scale integration than their bipolar counterparts.
6. M I C R O E L E C T R O N I C S - - C O M P O N E N T S ,
Application of sputtering in the fabrication of semiconductor devices. W. H. LEGAT and K. H. TIEFERT, Solid St. Technol., December (1970), p. 54. The technology involved in forming semiconductor to metal contacts, and connections to the semiconductor package are discussed. Current practices are reviewed. Two techniques are treated in detail. One involves the sequential sputtering of titanium, platinum and gold to provide electrical connection between the aluminum interconnections and the beam leads. The other technique makes use of platinum silicide for the semiconductor metal contact followed by the same sputtering sequence of titanium, platinum and gold.
FET cascode technique optimizes differential amplifier performance. D. C. WYLAND,Electronics, 18 January (1971), p. 81. Low-cost FETs afford breakdown voltage protection, while common mode rejection ratio and other circuit parameters can be improved by a factor of 100 without closely matched bipolar transistors or expensive components. Spinel m a y m a k e MOS faster than TZL. R. H. CUSHMAN,EDN, 15 January (1971), p. 35. Technology leaders' interest in silicon-on-spinel could portend widespread shifts in circuit technology, affecting logic, microwave and optoelectronics.
Silicon wafer technology---state of the art. J. T. LAW, Solid St. Technol., January (1971), p. 25. Two- to three-inch diameter silicon crystals with dislocation densities less than 1000 cm -z can now be fabricated on a production basis. These crystals are typically grown from 4000-8000 g melts. Slicing techniques, using I.D. blades, have a capability of 35 in. dia. Above this size, band or wire slicing is necessary. After a lapping and a them-thinning operation, several polishing methods can be used to produce a fiat, work-damage-free surface. Of these, the most effective is an alkaline slurry system yielding good results which are independent of the conductivity, type and resistivity of the wafer. A hybrid repeater using integrated circuits. R. C. FISCHER, Automat. Elec. Tech. J., January (1971), p. 197. Four-wire circuits secure transmission gains in the simplest possible m a n n e r - - b y providing a separate pair of conductors for each direction of transmission. In designing a repeater for two-wire circuits, the engineer tries to achieve the same effect--generally using either the "negative-impedance" or the "hybrid" approach. In this paper these approaches are briefly described and
309
SYSTEMS AND EQUIPMENTS
compared. A hybrid repeater is then described which employs solid-state techniques to achieve maximum dependability and compactness (especially important as trunk groups increase in size). Also described is a repeater test set designed specifically to test this new repeater. LSI tester does all things to all arrays. S. W. FIELDS, Electronics, 18 January (1971), p. 109. Modular system handles functional, parametric tests of bipolar or M O S circuits under computer control. EBS amplifiers debut. S. EDELMAN, Electron. Engnr, February (1971), p. 52. A new type of electron device is about to hit the market. Although under study for quite some time by several companies, Watkins-Johnson has taken the lead and will be first on the market with an EBS (electron-bombarded semiconductor) amplifier. The EBS makes use of a long-known phenomenon: a modulated electron beam can control the current in a semiconductor such as a reverse-biased pn junction. Reduced to practice, this principle leads to a family of microwave components each member of which has advantages over its conventional equivalent (high efficiency, broadband amplifiers; pulse and harmonic generators; real-times amplers; switches; and so forth).
Successful matchmakers: mlnlconnectors for digital ICs. R. HARWOOD, Electronics, 15 February ( 1971), p. 70. Performance of high-speed digital systems can suffer from circuit-to-connector mismatches, which can cause serious energy losses. The problem cannot always be solved by adapting existing r.f. and microwave connectors. But pin-and-socket units designed for the job are small enough to accommodate IC packages and can handle 10 gHz.
Double-diffused MOS transistor achieves microwave gain. T. P. CAUGE, J. KocsIs, H. J. SIGG and G. D. VENDELIN,Electronics, 15 February (1971), p. 99. MOS devices with 1 vt channels made by two-stage diffusion rival discrete, bipolar microwave transistors in performance and also promise a fivefold increase in digital logic speeds.
Gate noise in MOS FET's at moderately high frequencies. J. W. HASLETT and F. N. TROFIMENKOFF, Solid-St. Electron. 14 (1971), p. 239. A lumped model approach is used to evaluate the drain noise, gate noise and correlation between gate and drain noise for an n-channel enhancement M O S field-effect transistor.