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A mechanism of evaluation in MAOS systems
WORLD
ABSTRACTS
ON
MICROELECTRONICS
b r a n c h e s in parallel. Diode-controlled b r a n c h e s are ineffective. A straight line calibration R ~ ~ is f o u n d for silicon b e t w e e n 3 × 10 -z a n d 10 f~-cm a n d over a smaller range of g e r m a n i u m . D e p e n d i n g on t h e silicon surface preparation, polished or lapped, the reproducibility on t h e bulk material is ~ 1 per cent or =[=5 per cent. T h e resolving power in d e p t h t u r n s out to be about half a micron, horizontally it a m o u n t s to 25 ~m. T h e characteristics of this s y s t e m regarding reproducibility a n d resolving power are b o t h d u e to the m u l t i - t i p p e d aspect of t h e probe. Profiles are m e a s u r e d on angle-lapped epitaxial layers, b o t h isotype a n d heterotype. S o m e p r o b l e m s to be solved are m e n t i o n e d .
R a d i a t i o n - i n d u c e d perturbations in m e t a l - i n s u l a t o r - s e m i c o n d u c t o r structures. H. L. HUGHES. eroc. I E E E Reliab. Phys. Syrup., L a s Vegas, U . S . A . , 31 M a r c h - 2 April (1971). T h e radiation caused changes in interface properties account for m u c h of t h e observed radiation-degradation in M I S a n d bipolar transistors. T h e tenability of the p r e s e n t m o d e l for M I S radiationi n d u c e d degradation in regard to the observed modifications in electrical a n d structural properties of insulator films a n d t h e i n s u l a t o r - s e m i c o n d u c t o r interfaces will be discussed.
Cavity perturbation m e t h o d for m e a s u r e m e n t o f p e r m i t t i v i t y a n d c o n d u c t i v i t y of m e d i u m lossy s e m i c o n d u c t o r s a n d d i e l e c t r i c s . P. CICMnNEC. Solid St. Electron. 14 (1971), p. 153. A new' m e t h o d , based on cavity p e r t u r b a t i o n theory, suitable for the m e a s u r e m e n t of relative dielectric permittivity and conductivity of bulk s e m i c o n d u c t o r s a n d dielectrics in t h e range of *'r ~ 1"1 --20, ~ ~ 0"01 ~ - h n - l - - 1 0 ~ - ~ m 1, was developed. I n the case o f l o w - l o s s y m a t e r i a l s (~ ~ 0"01 ~-1m-1), this m e t h o d is applicable for permittivity m e a s u r e m e n t s only. T h e samples are in t h e shape of thin rods. As m e a s u r i n g e l e m e n t t h e h a l f - w a v e l e n g t h section of a rectangular waveguide w i t h o u t coupling iris, pertracted as TEl01 resonator, was used. T h e m e t h o d is applicable for centimeter, rather t h a n millimeter waves.
N o i s e of hot h o l e s in s p a c e - c h a r g e - l i m i t e d g e r m a n i u m diodes. M - A . NICOLET, H. R. BILGER a n d A. Sm:MKA. Solid St. Electron. 14 (1971), p. 667. T h e I - V characteristic, t h e a d m i t t a n c e a n d t h e noise of alloyed g e r m a n i u m p - p structures have been m e a s u r e d b e t w e e n 77 a n d 190°K, for electric fields u p to 8.103 V / c m a n d at frequencies < 22 M H z . T h e analysis of the d.c. characteristics establishes that at low a n d at h i g h biases o h m i c c u r r e n t a n d space-charge-limited c u r r e n t of h o t holes is p r e s e n t respectively. T h e white noise levels observed at h i g h o p e r a t i n g points at 150 a n d 190°K m u c h exceed those expected from a state of t h e r m a l equilibrium. T h e y are interpreted as noise of hot holes. T h e hole t e m p e r a ture T increases m o n o t o m i c a l l y above t h e lattice t e m p e r a t u r e T o w i t h t h e electric field. A p p r o x i m a t e considerations yield t e m p e r a t u r e s several t i m e s larger t h a n To. S o m e advantages a n d difficulties of this n e w t e c h n i q u e to m e a s u r e hot carrier noise are also discussed.
A mechanism
AND
RELIABILITY
421
o f e v a l u a t i o n in M A O S s y s t e m s .
C. JUND, B. KERVELAA a n d J. GROSVALET. Proc. I E E E Reliab. Physics Syrup., L a s Vegas, U . S . A . , 31 M a r c h 2 April (1971). I n A1-AI~-O~-SiO2-Si capacitors the evolution of flat b a n d voltage vs. equivalent thickness curves u n d e r applied electric field (2.106 V . c m -1) at 2 0 0 ° C d e m o n s t r a t e s t h e presence of a m i x t u r e of positive a n d negative charges in A1208 layer. Electric field separates a n d a c c u m u l a t e s t h e m at the SiO2-A120 3 b o u n d a r y . Potential barrier h e i g h t s r e m a i n constant.
Schottky barriers on p-type silicon. B. L. SMITIt and E. H. RHODERICK. Solid St. Electron. 14 (1971), p. 71. M e a s u r e m e n t s have been m a d e of t h e electrical characteristics of Schottky barriers m a d e by evaporating films of various metals (AI, Pb, Ni, Au, Ag, Cu) on to p - t y p e silicon. T h e barriers were generally lower t h a n on n - t y p e silicon, and in the case of A u the barrier was so low as to provide an effectively o h m i c contact at r o o m t e m p e r a ture. T h e truly exponential portion of the forward I - V characteristic was restrictcd to a comparatively small voltage range. W i t h i n this range " n " values of a b o u t I'10 were obtained. T h e reverse characteristics could be explained in t e r m s of generation in the depletion region. T h e variation of barrier height with metal workf u n c t i o n indicates that t h e surface-state parameters (density of states a n d position of neutral level) are essentially the same for p - t y p e as for n-type silicon. T h i s is confirmed by the fact that, for a given metal, t h e s u m of t h e barrier heights on n - t y p e a n d p - t y p e silicon is approximately equal to the b a n d - g a p .
Durability a n d stability of various i n s u l a t i n g f i l m s a g a i n s t the h i g h t e m p e r a t u r e w a t e r in an autoc l a v e . J. SATO, Y. BAN and K. MAEDA. Proc. 1EEE Reliab. Phys. Symp., L a s Vegas, U . S . A . , 31 M a r c h 2 April (1971). W e have investigated reliability of various electronic devices a n d materials in t h e h i g h t e m p e r a t u r e water a n d m o i s t u r e u s i n g an autoclave currently u s e d for t h e reliability tests in several fields. It appears that there are different types of corrosion a n d instability p h e n o m e n a a m o n g various insulating films on Silicon. Reliability p r o b l e m s of Silicon Nitride, of Silicon Dioxide a n d of other films will be discussed.
Effect o f g e o m e t r y on d o u b l e i n j e c t i o n in s e m i c o n d u c t o r s . D. H. LEE and R. BARON. Solid St. Electron. 14 (1971), p. 295. C h a r g e density profiles, electric field distributions and c u r r e n t - v o l t a g e relationships are derived for L a m p e r t ' s two carrier semicond u c t o r regime in structures w h i c h are cylindrical a n d spherical in geometry. T h e s e results are c o m p a r e d with those for t h e planar case. T h e I - g characteristics can be described by I = ~q~p~n'v(Po--no)V 2 w'herc ~ is a constant scaling factor d e p e n d e n t on the geometry. Values for ~ are derived in closed form for the cylindrical case, whereas n u m e r i c a l results are g i v e n for the spherical configuration. F o r m u l a t i o n of a small signal a.c. equivalent circuit w h i c h represents the s e m i c o n d u c t o r regime for the various geometries is also presented.
ABSTRACTS
ON
MICROELECTRONICS
b r a n c h e s in parallel. Diode-controlled b r a n c h e s are ineffective. A straight line calibration R ~ ~ is f o u n d for silicon b e t w e e n 3 × 10 -z a n d 10 f~-cm a n d over a smaller range of g e r m a n i u m . D e p e n d i n g on t h e silicon surface preparation, polished or lapped, the reproducibility on t h e bulk material is ~ 1 per cent or =[=5 per cent. T h e resolving power in d e p t h t u r n s out to be about half a micron, horizontally it a m o u n t s to 25 ~m. T h e characteristics of this s y s t e m regarding reproducibility a n d resolving power are b o t h d u e to the m u l t i - t i p p e d aspect of t h e probe. Profiles are m e a s u r e d on angle-lapped epitaxial layers, b o t h isotype a n d heterotype. S o m e p r o b l e m s to be solved are m e n t i o n e d .
R a d i a t i o n - i n d u c e d perturbations in m e t a l - i n s u l a t o r - s e m i c o n d u c t o r structures. H. L. HUGHES. eroc. I E E E Reliab. Phys. Syrup., L a s Vegas, U . S . A . , 31 M a r c h - 2 April (1971). T h e radiation caused changes in interface properties account for m u c h of t h e observed radiation-degradation in M I S a n d bipolar transistors. T h e tenability of the p r e s e n t m o d e l for M I S radiationi n d u c e d degradation in regard to the observed modifications in electrical a n d structural properties of insulator films a n d t h e i n s u l a t o r - s e m i c o n d u c t o r interfaces will be discussed.
Cavity perturbation m e t h o d for m e a s u r e m e n t o f p e r m i t t i v i t y a n d c o n d u c t i v i t y of m e d i u m lossy s e m i c o n d u c t o r s a n d d i e l e c t r i c s . P. CICMnNEC. Solid St. Electron. 14 (1971), p. 153. A new' m e t h o d , based on cavity p e r t u r b a t i o n theory, suitable for the m e a s u r e m e n t of relative dielectric permittivity and conductivity of bulk s e m i c o n d u c t o r s a n d dielectrics in t h e range of *'r ~ 1"1 --20, ~ ~ 0"01 ~ - h n - l - - 1 0 ~ - ~ m 1, was developed. I n the case o f l o w - l o s s y m a t e r i a l s (~ ~ 0"01 ~-1m-1), this m e t h o d is applicable for permittivity m e a s u r e m e n t s only. T h e samples are in t h e shape of thin rods. As m e a s u r i n g e l e m e n t t h e h a l f - w a v e l e n g t h section of a rectangular waveguide w i t h o u t coupling iris, pertracted as TEl01 resonator, was used. T h e m e t h o d is applicable for centimeter, rather t h a n millimeter waves.
N o i s e of hot h o l e s in s p a c e - c h a r g e - l i m i t e d g e r m a n i u m diodes. M - A . NICOLET, H. R. BILGER a n d A. Sm:MKA. Solid St. Electron. 14 (1971), p. 667. T h e I - V characteristic, t h e a d m i t t a n c e a n d t h e noise of alloyed g e r m a n i u m p - p structures have been m e a s u r e d b e t w e e n 77 a n d 190°K, for electric fields u p to 8.103 V / c m a n d at frequencies < 22 M H z . T h e analysis of the d.c. characteristics establishes that at low a n d at h i g h biases o h m i c c u r r e n t a n d space-charge-limited c u r r e n t of h o t holes is p r e s e n t respectively. T h e white noise levels observed at h i g h o p e r a t i n g points at 150 a n d 190°K m u c h exceed those expected from a state of t h e r m a l equilibrium. T h e y are interpreted as noise of hot holes. T h e hole t e m p e r a ture T increases m o n o t o m i c a l l y above t h e lattice t e m p e r a t u r e T o w i t h t h e electric field. A p p r o x i m a t e considerations yield t e m p e r a t u r e s several t i m e s larger t h a n To. S o m e advantages a n d difficulties of this n e w t e c h n i q u e to m e a s u r e hot carrier noise are also discussed.
A mechanism
AND
RELIABILITY
421
o f e v a l u a t i o n in M A O S s y s t e m s .
C. JUND, B. KERVELAA a n d J. GROSVALET. Proc. I E E E Reliab. Physics Syrup., L a s Vegas, U . S . A . , 31 M a r c h 2 April (1971). I n A1-AI~-O~-SiO2-Si capacitors the evolution of flat b a n d voltage vs. equivalent thickness curves u n d e r applied electric field (2.106 V . c m -1) at 2 0 0 ° C d e m o n s t r a t e s t h e presence of a m i x t u r e of positive a n d negative charges in A1208 layer. Electric field separates a n d a c c u m u l a t e s t h e m at the SiO2-A120 3 b o u n d a r y . Potential barrier h e i g h t s r e m a i n constant.
Schottky barriers on p-type silicon. B. L. SMITIt and E. H. RHODERICK. Solid St. Electron. 14 (1971), p. 71. M e a s u r e m e n t s have been m a d e of t h e electrical characteristics of Schottky barriers m a d e by evaporating films of various metals (AI, Pb, Ni, Au, Ag, Cu) on to p - t y p e silicon. T h e barriers were generally lower t h a n on n - t y p e silicon, and in the case of A u the barrier was so low as to provide an effectively o h m i c contact at r o o m t e m p e r a ture. T h e truly exponential portion of the forward I - V characteristic was restrictcd to a comparatively small voltage range. W i t h i n this range " n " values of a b o u t I'10 were obtained. T h e reverse characteristics could be explained in t e r m s of generation in the depletion region. T h e variation of barrier height with metal workf u n c t i o n indicates that t h e surface-state parameters (density of states a n d position of neutral level) are essentially the same for p - t y p e as for n-type silicon. T h i s is confirmed by the fact that, for a given metal, t h e s u m of t h e barrier heights on n - t y p e a n d p - t y p e silicon is approximately equal to the b a n d - g a p .
Durability a n d stability of various i n s u l a t i n g f i l m s a g a i n s t the h i g h t e m p e r a t u r e w a t e r in an autoc l a v e . J. SATO, Y. BAN and K. MAEDA. Proc. 1EEE Reliab. Phys. Symp., L a s Vegas, U . S . A . , 31 M a r c h 2 April (1971). W e have investigated reliability of various electronic devices a n d materials in t h e h i g h t e m p e r a t u r e water a n d m o i s t u r e u s i n g an autoclave currently u s e d for t h e reliability tests in several fields. It appears that there are different types of corrosion a n d instability p h e n o m e n a a m o n g various insulating films on Silicon. Reliability p r o b l e m s of Silicon Nitride, of Silicon Dioxide a n d of other films will be discussed.
Effect o f g e o m e t r y on d o u b l e i n j e c t i o n in s e m i c o n d u c t o r s . D. H. LEE and R. BARON. Solid St. Electron. 14 (1971), p. 295. C h a r g e density profiles, electric field distributions and c u r r e n t - v o l t a g e relationships are derived for L a m p e r t ' s two carrier semicond u c t o r regime in structures w h i c h are cylindrical a n d spherical in geometry. T h e s e results are c o m p a r e d with those for t h e planar case. T h e I - g characteristics can be described by I = ~q~p~n'v(Po--no)V 2 w'herc ~ is a constant scaling factor d e p e n d e n t on the geometry. Values for ~ are derived in closed form for the cylindrical case, whereas n u m e r i c a l results are g i v e n for the spherical configuration. F o r m u l a t i o n of a small signal a.c. equivalent circuit w h i c h represents the s e m i c o n d u c t o r regime for the various geometries is also presented.