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A new Al:Ni phase in thin films
Abstracts o f The Israel Society o f Electron Microscopy
(RTP) were not s t u d i e d in a s y s t e m a t i c manner. We have studied the r e c r y s t a l lizat ion processe s both in Ni and in N % - A I - N i thin films structure d u r i n g RTP. In the latter system we also studied s o l i d i f i c a t i o n and regrowth processes which took p l a c e after RTP treatm e n t s at t e m p e r a t u r e higher than 640°C, w h i c h led to an e u t e c t i c m e l t i n g at the interm ediate A1 layer. The film of Ni (60 nm) and the trifilm of Ni (30 n m ) / A I (20 nm)/Ni (30 nm) w e r e deposited on a m o l y b d e n u m g r i d (of TEM) coated w i t h thin film of F o r m v a r polymer by using an electron b e a m gun evaporator under high vacuum (2.10 -6 Torr). Subsequently, ~ t e r the p o l y m e r film was dissolved, the samples w e r e h e a t - t r e a t e d by m e a n s of RTP at temperatures between 300°C and i150°C for periods of 2 to 120 seconds and then were a n a l y z e d by m e a n s of TEM. It was found that AI3Ni c o m p o u n d was formed in the N i / A I / N i system and that there is a corr e l a t i o n between the grain g r o w t h kinetics in the films and the c o o l i n g behavior induced by the t i m e - t e m p e r a t u r e schedule e x e c u t e d in the RTP. This s u b j e c t is d i s c u s s e d from the v i e w p o i n t of phase t r a n s f o r m a t i o n theory.
R E C R Y S T A L L I Z A T I O N OF COPPER THIN FILMS FOLLOWING LASER ANNEALING A. Venkert,
Y. Zeiri and J. B l o c h
Nuclear Research Center-Negev, P.O. Box 9001, B e e r - S h e v a 8 4 1 9 0 , Israel
The i n t e r a c t i o n of Ar + laser pulses w i t h copper thin films was s t u d i e d using t ransmissio n electron m i c r o s c o p y (TEM). A i000 R film was p r e p a r e d by e v a p o r a t i o n of c o p p e r at O.i m P a onto a glass substrate. The e v a p o r a t e d film was cut into 3x3 m m samples w h i c h were separated from the glass s u b s t r a t e and m o u n t e d on copper apertures w i t h a I000 um hole. Laser pulses weze p r o d u c e d and c c ~ + ~ 1 1 = ~ ~y ~ ~ co us to -o pt ic m o d u l a t o r w h i c h chopped a continuous w av e b ea m into pulses r a n g i n g from several micro-. seconds and upo During the irradiation the target zone was first m e l t e d and then evaporated followed by a hole forma t i o n in the film. By c o n t r o l l i n g the pulse duration, m e l t i n g w i t h o u t evaporation was achieved. Following the pulse termination the m e l t e d area is recrystallized and can be identified using TEM techniques. The processes of solidifi-
22
c a t i o n and recrystallization were obs e r v e d and the effects of pulse duration on the m e c h a n i s m of these processes w e r e studied. The results lead to a b e t t e r understanding of recrystallization processes in metal thin films.
A NEW
AI:Ni
PHASE
IN THIN
FILMS
Y. Lereah and E. Gr~nbaum Faculty of Engineering, Tel-Aviv U n i v e r s i t y , T e l - A v i v 69978, I s r a e l
W e report on the reaction b e t w e e n A] and Ni that forms a phase with a structure that is not included in the phase diagram. It is well known that in thir films metastable phases do exist w h i c h are not found in the bulk. Singlec r y s t a l (001) films of A1 500-1OOO thick were p r e p a r e d by evaporation in h i g h - v a c u u m of A1 onto single-crystals of N a C l (001) cleavage face at 350°C. T h e films were m o u n t e d on Ni grids and h e a t e d in a transmission electron microscope, Philips EM300, with a heating stage. At 6OO°C, the A1 film inte~ a c t e d with the Ni grid and formed a ne~ phase as indicated by the electron diffraction pattern. The d spacings of this new phase suggest that it is a superstructure, but the angles between the planes do not agree. The d i f f r a c t ion pattern of the new phase consists of sharp spots, indicating that the film is well oriented.
STRUCTURE OF FRACTURES OF CUl.85S SAMPLES SYNTHETIZED AT i 0 0 0 - i080°C M. Kazinets and A. Kiriaty The I n s t i t u t e s for A p p l i e d R e s e a r c h B e n - G u r i o n U n i v e r s i t y of the N e g e v
A series of samples of the composition Cui.85 S were synthesized at the femperatures i000, IO20, 1040, 1060 an io8oOc from p o w d e r e d Cu and S in qu~rt ampules under a vacuum of about iOTorr. The chosen temperatures being lower than the melting point of Cu (iO83°C), the reaction took place between solid Cu and S vapor. The struc ture of fractures of the synthesized sample was investigated with the aid c a JEOL-35CF scanning electron m i c r o scope and their composition by the EDE (energy-dispersive X-ray spectroscopy)
(RTP) were not s t u d i e d in a s y s t e m a t i c manner. We have studied the r e c r y s t a l lizat ion processe s both in Ni and in N % - A I - N i thin films structure d u r i n g RTP. In the latter system we also studied s o l i d i f i c a t i o n and regrowth processes which took p l a c e after RTP treatm e n t s at t e m p e r a t u r e higher than 640°C, w h i c h led to an e u t e c t i c m e l t i n g at the interm ediate A1 layer. The film of Ni (60 nm) and the trifilm of Ni (30 n m ) / A I (20 nm)/Ni (30 nm) w e r e deposited on a m o l y b d e n u m g r i d (of TEM) coated w i t h thin film of F o r m v a r polymer by using an electron b e a m gun evaporator under high vacuum (2.10 -6 Torr). Subsequently, ~ t e r the p o l y m e r film was dissolved, the samples w e r e h e a t - t r e a t e d by m e a n s of RTP at temperatures between 300°C and i150°C for periods of 2 to 120 seconds and then were a n a l y z e d by m e a n s of TEM. It was found that AI3Ni c o m p o u n d was formed in the N i / A I / N i system and that there is a corr e l a t i o n between the grain g r o w t h kinetics in the films and the c o o l i n g behavior induced by the t i m e - t e m p e r a t u r e schedule e x e c u t e d in the RTP. This s u b j e c t is d i s c u s s e d from the v i e w p o i n t of phase t r a n s f o r m a t i o n theory.
R E C R Y S T A L L I Z A T I O N OF COPPER THIN FILMS FOLLOWING LASER ANNEALING A. Venkert,
Y. Zeiri and J. B l o c h
Nuclear Research Center-Negev, P.O. Box 9001, B e e r - S h e v a 8 4 1 9 0 , Israel
The i n t e r a c t i o n of Ar + laser pulses w i t h copper thin films was s t u d i e d using t ransmissio n electron m i c r o s c o p y (TEM). A i000 R film was p r e p a r e d by e v a p o r a t i o n of c o p p e r at O.i m P a onto a glass substrate. The e v a p o r a t e d film was cut into 3x3 m m samples w h i c h were separated from the glass s u b s t r a t e and m o u n t e d on copper apertures w i t h a I000 um hole. Laser pulses weze p r o d u c e d and c c ~ + ~ 1 1 = ~ ~y ~ ~ co us to -o pt ic m o d u l a t o r w h i c h chopped a continuous w av e b ea m into pulses r a n g i n g from several micro-. seconds and upo During the irradiation the target zone was first m e l t e d and then evaporated followed by a hole forma t i o n in the film. By c o n t r o l l i n g the pulse duration, m e l t i n g w i t h o u t evaporation was achieved. Following the pulse termination the m e l t e d area is recrystallized and can be identified using TEM techniques. The processes of solidifi-
22
c a t i o n and recrystallization were obs e r v e d and the effects of pulse duration on the m e c h a n i s m of these processes w e r e studied. The results lead to a b e t t e r understanding of recrystallization processes in metal thin films.
A NEW
AI:Ni
PHASE
IN THIN
FILMS
Y. Lereah and E. Gr~nbaum Faculty of Engineering, Tel-Aviv U n i v e r s i t y , T e l - A v i v 69978, I s r a e l
W e report on the reaction b e t w e e n A] and Ni that forms a phase with a structure that is not included in the phase diagram. It is well known that in thir films metastable phases do exist w h i c h are not found in the bulk. Singlec r y s t a l (001) films of A1 500-1OOO thick were p r e p a r e d by evaporation in h i g h - v a c u u m of A1 onto single-crystals of N a C l (001) cleavage face at 350°C. T h e films were m o u n t e d on Ni grids and h e a t e d in a transmission electron microscope, Philips EM300, with a heating stage. At 6OO°C, the A1 film inte~ a c t e d with the Ni grid and formed a ne~ phase as indicated by the electron diffraction pattern. The d spacings of this new phase suggest that it is a superstructure, but the angles between the planes do not agree. The d i f f r a c t ion pattern of the new phase consists of sharp spots, indicating that the film is well oriented.
STRUCTURE OF FRACTURES OF CUl.85S SAMPLES SYNTHETIZED AT i 0 0 0 - i080°C M. Kazinets and A. Kiriaty The I n s t i t u t e s for A p p l i e d R e s e a r c h B e n - G u r i o n U n i v e r s i t y of the N e g e v
A series of samples of the composition Cui.85 S were synthesized at the femperatures i000, IO20, 1040, 1060 an io8oOc from p o w d e r e d Cu and S in qu~rt ampules under a vacuum of about iOTorr. The chosen temperatures being lower than the melting point of Cu (iO83°C), the reaction took place between solid Cu and S vapor. The struc ture of fractures of the synthesized sample was investigated with the aid c a JEOL-35CF scanning electron m i c r o scope and their composition by the EDE (energy-dispersive X-ray spectroscopy)