- Email: [email protected]
A new thin film transmission line
186
A B S T R A C T S ON M I C R O E L E C T R O N I C S
AND R E L I A B I L I T Y
density. This approximation is no more correct when the electric field increases in the supposed neutral region. We have established the equations giving the voltage, current and carrier repartition in this case and we present a first approximate solution. This solution shows a non-negligible concentration of free carriers in the previously supposed ionic space charge region.
Measuring the properties of semiconductor grade materials. E. EARLEYWlNE, L. P. HILTON and D. TOWNLEY, SCP and Solid-State Technology, October (1965), p. 17. As the influence of the various properties of semiconductor materials on the characteristics of finished devices have become better understood, the need has grown for improved evaluation techniques to assure that specified parameters are met. In this article, the authors describe the importance of these various parameters and the evaluation equipment and techniques that have been evolved to assure accurate, reliable, reproducible data. N e w developments in semiconductor materials. E. L. KERN and E. EARLEYWINE,SOP and Solid-State Technology, October (1965), p. 28. The number of semiconductor materials with unique and interesting properties is endless--from the dements through the binary compounds and alloys to three and four component systems--and on beyond. Material scientists are diligently synthesizing and characterizing the materials--inorganic for now, but also organic in the future. Still, the over-whehning majority of uses and quantities of devices continues to be made from the several elemental materials, silicon and germanium being predominant. New materials go into new types of devices; the reliable standard materials, selenium for example, are never completely replaced. Interesting new materials and recent developments in standard ~aterials are reviewed. THIN FILM CIRCUITS Thin layer integrated circuits. S. FLAKS and R. BORGNE,Cdbles Transm., 19e A., n ° 4, October (1965), pp. 298-318. (In French.) After a brief reminder of the more recent developments in microelectronics, and showing the part played by thin layer integrated circuits in the latter art, some practical methods by which such circuits may be obtained are mentioned, with special reference to the two more important ones, i.e. vacuum evaporation and cathodic sputtering. Further, the processes used in the manufacturing of suitable masks (screens), the dimensions of which are often quite small, are described. The authors give a discussion of the accuracy that may be expected in applying the described techniques to the manufacture of resistors, capacitors and inductors. Some examples of embodiment are given, together with a description of an electronic bistable device built according to the mentioned processes. Apparatus for the preparation of passive micro-circuits. J. T. HOLDEN,Revue Soc. r. belge Ing. Ind. 5, May (1965), pp. 225. (In French.) Vacuum-deposited films are now used extensively in the electrical industry in the production of semi-conducting devices, memory stores for computers, etc. However, there has been a growing interest in the production of complete electronic circuits made from thin film components deposited on glass or ceramic substrates. This paper presents an account of the work carried out over a number of years into the electrical characteristics and the monitoring of vacuum-deposited films. Applications of this work lead to the design of apparatus suitable for making passive thin film systems or micro-miniature circuits. The realization of monomorphic thin film distributed RC networks. RALPH W. WYNDRUM,JR., 19651 IEEE International Convention Record, Part 10, March 22-26 (1965), p. 90. A synthesis technique has been developed to realize RC driving point and transfer functions in a network embodiment which is particularly well suited to current thin-film technology. The resulting structures are described as in-line, one piece networks, which may be deposited in three homogeneous layers. Mathematically, the final network may be conceived of as a cascade of distributed RC (R--~) transmission line segments, similar to cascaded LC coaxial segment realizations. Experimental RC networks have been constructed which substantiate the validity of this synthesis procedure, and are discussed in this paper. A n e w thin film transmission line. R. W. WYNDRUM,JR. and D. MILLS, Bell Laboratories Record, September (1965), p. 328. A new contribution to thin film technology replaces invidividual microminiature circuit elements with layers of resistive, capacitive and conductive material. It has already produced reliable circuits with novel electrical characteristics.
A B S T R A C T S ON M I C R O E L E C T R O N I C S
AND R E L I A B I L I T Y
density. This approximation is no more correct when the electric field increases in the supposed neutral region. We have established the equations giving the voltage, current and carrier repartition in this case and we present a first approximate solution. This solution shows a non-negligible concentration of free carriers in the previously supposed ionic space charge region.
Measuring the properties of semiconductor grade materials. E. EARLEYWlNE, L. P. HILTON and D. TOWNLEY, SCP and Solid-State Technology, October (1965), p. 17. As the influence of the various properties of semiconductor materials on the characteristics of finished devices have become better understood, the need has grown for improved evaluation techniques to assure that specified parameters are met. In this article, the authors describe the importance of these various parameters and the evaluation equipment and techniques that have been evolved to assure accurate, reliable, reproducible data. N e w developments in semiconductor materials. E. L. KERN and E. EARLEYWINE,SOP and Solid-State Technology, October (1965), p. 28. The number of semiconductor materials with unique and interesting properties is endless--from the dements through the binary compounds and alloys to three and four component systems--and on beyond. Material scientists are diligently synthesizing and characterizing the materials--inorganic for now, but also organic in the future. Still, the over-whehning majority of uses and quantities of devices continues to be made from the several elemental materials, silicon and germanium being predominant. New materials go into new types of devices; the reliable standard materials, selenium for example, are never completely replaced. Interesting new materials and recent developments in standard ~aterials are reviewed. THIN FILM CIRCUITS Thin layer integrated circuits. S. FLAKS and R. BORGNE,Cdbles Transm., 19e A., n ° 4, October (1965), pp. 298-318. (In French.) After a brief reminder of the more recent developments in microelectronics, and showing the part played by thin layer integrated circuits in the latter art, some practical methods by which such circuits may be obtained are mentioned, with special reference to the two more important ones, i.e. vacuum evaporation and cathodic sputtering. Further, the processes used in the manufacturing of suitable masks (screens), the dimensions of which are often quite small, are described. The authors give a discussion of the accuracy that may be expected in applying the described techniques to the manufacture of resistors, capacitors and inductors. Some examples of embodiment are given, together with a description of an electronic bistable device built according to the mentioned processes. Apparatus for the preparation of passive micro-circuits. J. T. HOLDEN,Revue Soc. r. belge Ing. Ind. 5, May (1965), pp. 225. (In French.) Vacuum-deposited films are now used extensively in the electrical industry in the production of semi-conducting devices, memory stores for computers, etc. However, there has been a growing interest in the production of complete electronic circuits made from thin film components deposited on glass or ceramic substrates. This paper presents an account of the work carried out over a number of years into the electrical characteristics and the monitoring of vacuum-deposited films. Applications of this work lead to the design of apparatus suitable for making passive thin film systems or micro-miniature circuits. The realization of monomorphic thin film distributed RC networks. RALPH W. WYNDRUM,JR., 19651 IEEE International Convention Record, Part 10, March 22-26 (1965), p. 90. A synthesis technique has been developed to realize RC driving point and transfer functions in a network embodiment which is particularly well suited to current thin-film technology. The resulting structures are described as in-line, one piece networks, which may be deposited in three homogeneous layers. Mathematically, the final network may be conceived of as a cascade of distributed RC (R--~) transmission line segments, similar to cascaded LC coaxial segment realizations. Experimental RC networks have been constructed which substantiate the validity of this synthesis procedure, and are discussed in this paper. A n e w thin film transmission line. R. W. WYNDRUM,JR. and D. MILLS, Bell Laboratories Record, September (1965), p. 328. A new contribution to thin film technology replaces invidividual microminiature circuit elements with layers of resistive, capacitive and conductive material. It has already produced reliable circuits with novel electrical characteristics.