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Absorption spectrum of gaseous F− and electron affinities of the halogen atoms
Classified Abstracts 953m967
393
Materials and Techniques used in Vacuum Technology 40.
G a s e s and V a p o u r s
40 : 19 953. The polarization of electron impact radiation in helium.
( Greai Britain) D. W. O. Heddle and G. B. Lueas, Proc. Roy. Soc., 271 (1344), 129-142. 40 954. Recombination of oxygen atoms in the presence of inert gases. (U.S.A.) J. E. Morgan and H. I. Schiff, Y. Chem. Phys., 38 (7), 1 April 1963, 1495-1500. 40 955. Shock wave studies of the recombination of O atoms by Ar catalysts at high temperatures. (U.S.A,) L. Wray, J. Chem. Phys., 38 (7), 1 April 1963, 1518-1524. 4O 956. Absorption spectrum of gaseous F - and electron affinities of the halogen atoms. (U.S.A.) R. S. Berry and C. W. Reimann, J. Chem. Phys., 38 (7), 1 April 1963, 1540-1543. 40 957. Shock-tube study of carbon dioxide dissociation rate. (U.S.A.) T. A. Brabbs, et al., Y. Chem. Phys., 38 (8), 15 April 1963, 1939-1944. 40 958. Comparison of atom spin relaxation in the gas phase and on a surface. (U.S.A.) R. G. Brewer, J. Chem. Phys., 38 (8), 15 April 1963, 2037-2038. 40 959. Analysis of molecular flow in an isothermal enclosure.
(U.S.A.) K. D. Carlson, et al., J. Chem. Phys., 38 (9), 1 May 1963, 2064-2074.
960. Kinetics of thermal ionization.
4O II. Xenon and krypton.
(U.S.A.) W. M. Kornegay and H. S. Johnson, J. Chem. Phys., 38 (9), 1 May 1963, 2242-2247, 4O 961. Charge transfer in oxygen, ititr_o~e_nand nitric oxide. (U.S.A.) R. F. Stebbings, et al., J. Chem. Phys., 38 (9), 1 May 1963, 2277-2279. 4O 962. Charge transfer between some atmospheric ions and atomic oxygen. (U.S.A.) R. F. Stebbins and A. C. H. Smith, J. Chem. Phys., 38 (9), 1 May 1963, 2280-2284. 40 963. Ionization by ions in the M e V range. (U.S.A.) S. Wexler and D. C. Hess, J. Chem. Phys., 38 (9), 1 May 1963, 2308-2309. 40 964. Kinetic theory of nonspherieal molecules V. (U.S.A.) C. F. Curtiss and J. S. Dahler, J. Chem. Phys., 38 (10), 15 May 1963, 2352-2362. 40 965. Interaction of low-energy electrons with water vapor and other polar molecules. (U.S.A.) G. S. Hurst, et al., J. Chem. Phys., 38 (10), 15 May 1963, 2573-2578.
40 : 47 : 30 Methods employed for measuring the gas evolution from getters during evaporation. See Abstr. No. 972. 40:31 Contamination of xenon gas filling by nitrogen from iron components. See Abstr. No. 936. 40:22 The removal of nitrogen in an omegatron mass spectrometer. See Abstr. No. 919.
41.
M e t a l s and A l l o y s
41 966. Field emission observations of carbon on tantalum. R. Klein and L. B. Leder, J. Chem. Phys., 38 (8), 15 April 1963, 1863-1872. 41 : 37 967. High temperature oxidation of zirconinm ribbons.
(Great
Britain) The interaction of carbon dioxide and carbon monoxide with zirconium ribbons has been investigated in'the temperature range 630-830°C and at pressures of about 10 -1 mmHg. Carbon dioxide reacts dissociatively at 630 ° with oxidation of the metal and carbon monoxide desorption. At 630 ° dissociation ceases at an estimated oxide thickness of 650A. The initial rate of carbon dioxide dissociation is a function of the chemical nature of the surface and the slow-step is considered to be dissociation of the molecule. Although some of the carbon monoxide reacts at 630 ° the rate is negligible compared with surface oxidation at the same temperature. The activation energy of the carbon monoxide reaction is ,~70 kcal mole -1 and its rate is pressure independent. Oxygen interaction in the temperature range 200-350°C is initially rapid bu the subsequent slow process has an activation energy of ,~17 kcal mole -1 and is pressure independent. Between 630 ° and 830°C the activation energy is ,~70 keal mole -a and the rate proportional to (pressure)-°'a which is compatible with an anion vacancy mechanism. There is a distinct break in the oxide thickness temperature curve at 730 ° ; the extent of oxidation at 730 ° is appreciably less if an oxide film is first formed at a lower temperature. A value of about 95 kcal mole -1 is estimated for the heat of formation of a Frenkel defect (anion type) in zirconium dioxide. (Great Britain) (Authors) C. M. Qinn and M. W. Roberts, Trans. Faraday Soc., 59 (4), April 1963, 985-993. 41 : 30 The effect of fabrication variables on chromium thin film resistors. See Abstr. No. 928. Experimental thin film computer memory unit. 927.
Spatter mechanism during metal evaporation.
41 : 30 See Abstr. No.
41 : 30 See Abstr. No. 926. 41 : 30
Evaporation of silicon in vacuo.
See Abstr. No. 925.
41:16 Crystal field effects in the adsorption and desorption of oxygen at a nickel oxide surface. See Abstr. No. 894. 41 : 16 : 30 Some reactions of eyclohexene with hydrogen and deuterium on evaporated gold films. See Abstr. No. 888.
393
Materials and Techniques used in Vacuum Technology 40.
G a s e s and V a p o u r s
40 : 19 953. The polarization of electron impact radiation in helium.
( Greai Britain) D. W. O. Heddle and G. B. Lueas, Proc. Roy. Soc., 271 (1344), 129-142. 40 954. Recombination of oxygen atoms in the presence of inert gases. (U.S.A.) J. E. Morgan and H. I. Schiff, Y. Chem. Phys., 38 (7), 1 April 1963, 1495-1500. 40 955. Shock wave studies of the recombination of O atoms by Ar catalysts at high temperatures. (U.S.A,) L. Wray, J. Chem. Phys., 38 (7), 1 April 1963, 1518-1524. 4O 956. Absorption spectrum of gaseous F - and electron affinities of the halogen atoms. (U.S.A.) R. S. Berry and C. W. Reimann, J. Chem. Phys., 38 (7), 1 April 1963, 1540-1543. 40 957. Shock-tube study of carbon dioxide dissociation rate. (U.S.A.) T. A. Brabbs, et al., Y. Chem. Phys., 38 (8), 15 April 1963, 1939-1944. 40 958. Comparison of atom spin relaxation in the gas phase and on a surface. (U.S.A.) R. G. Brewer, J. Chem. Phys., 38 (8), 15 April 1963, 2037-2038. 40 959. Analysis of molecular flow in an isothermal enclosure.
(U.S.A.) K. D. Carlson, et al., J. Chem. Phys., 38 (9), 1 May 1963, 2064-2074.
960. Kinetics of thermal ionization.
4O II. Xenon and krypton.
(U.S.A.) W. M. Kornegay and H. S. Johnson, J. Chem. Phys., 38 (9), 1 May 1963, 2242-2247, 4O 961. Charge transfer in oxygen, ititr_o~e_nand nitric oxide. (U.S.A.) R. F. Stebbings, et al., J. Chem. Phys., 38 (9), 1 May 1963, 2277-2279. 4O 962. Charge transfer between some atmospheric ions and atomic oxygen. (U.S.A.) R. F. Stebbins and A. C. H. Smith, J. Chem. Phys., 38 (9), 1 May 1963, 2280-2284. 40 963. Ionization by ions in the M e V range. (U.S.A.) S. Wexler and D. C. Hess, J. Chem. Phys., 38 (9), 1 May 1963, 2308-2309. 40 964. Kinetic theory of nonspherieal molecules V. (U.S.A.) C. F. Curtiss and J. S. Dahler, J. Chem. Phys., 38 (10), 15 May 1963, 2352-2362. 40 965. Interaction of low-energy electrons with water vapor and other polar molecules. (U.S.A.) G. S. Hurst, et al., J. Chem. Phys., 38 (10), 15 May 1963, 2573-2578.
40 : 47 : 30 Methods employed for measuring the gas evolution from getters during evaporation. See Abstr. No. 972. 40:31 Contamination of xenon gas filling by nitrogen from iron components. See Abstr. No. 936. 40:22 The removal of nitrogen in an omegatron mass spectrometer. See Abstr. No. 919.
41.
M e t a l s and A l l o y s
41 966. Field emission observations of carbon on tantalum. R. Klein and L. B. Leder, J. Chem. Phys., 38 (8), 15 April 1963, 1863-1872. 41 : 37 967. High temperature oxidation of zirconinm ribbons.
(Great
Britain) The interaction of carbon dioxide and carbon monoxide with zirconium ribbons has been investigated in'the temperature range 630-830°C and at pressures of about 10 -1 mmHg. Carbon dioxide reacts dissociatively at 630 ° with oxidation of the metal and carbon monoxide desorption. At 630 ° dissociation ceases at an estimated oxide thickness of 650A. The initial rate of carbon dioxide dissociation is a function of the chemical nature of the surface and the slow-step is considered to be dissociation of the molecule. Although some of the carbon monoxide reacts at 630 ° the rate is negligible compared with surface oxidation at the same temperature. The activation energy of the carbon monoxide reaction is ,~70 kcal mole -1 and its rate is pressure independent. Oxygen interaction in the temperature range 200-350°C is initially rapid bu the subsequent slow process has an activation energy of ,~17 kcal mole -1 and is pressure independent. Between 630 ° and 830°C the activation energy is ,~70 keal mole -a and the rate proportional to (pressure)-°'a which is compatible with an anion vacancy mechanism. There is a distinct break in the oxide thickness temperature curve at 730 ° ; the extent of oxidation at 730 ° is appreciably less if an oxide film is first formed at a lower temperature. A value of about 95 kcal mole -1 is estimated for the heat of formation of a Frenkel defect (anion type) in zirconium dioxide. (Great Britain) (Authors) C. M. Qinn and M. W. Roberts, Trans. Faraday Soc., 59 (4), April 1963, 985-993. 41 : 30 The effect of fabrication variables on chromium thin film resistors. See Abstr. No. 928. Experimental thin film computer memory unit. 927.
Spatter mechanism during metal evaporation.
41 : 30 See Abstr. No.
41 : 30 See Abstr. No. 926. 41 : 30
Evaporation of silicon in vacuo.
See Abstr. No. 925.
41:16 Crystal field effects in the adsorption and desorption of oxygen at a nickel oxide surface. See Abstr. No. 894. 41 : 16 : 30 Some reactions of eyclohexene with hydrogen and deuterium on evaporated gold films. See Abstr. No. 888.