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Adhesion and electrical insulation of alumina films, electron beam evaporated onto a steel substrate
Classified
abstracts
858-870
orientation and disorientation on the morphology of growth of single crystal CdSe films is demonstrated. A V Vanyukov and N M Kondaurov, Neorg Muter, 7 (ll), 1971,19561959 (in Russian). 30 859. The hexagonal modiication of CdTe in condensed films. (USSR) The crystalline structure of CdTe films is investigated as a function of substrate material, composition of condensing vapour, and substrate position with respect to the molecular beam. The films were prepared by evaporation of a compound of stoichiometric composition from a tantalum boat in vacuum at 5 x 1O-5 torr. Additional evaporation of Te or Cd from separate crucibles was used in many cases. The vapour was condensed on substrates of mica, glass, NaCl and KBr heated to 300°C. Electron-graphical and electron-microscopical investigations of the conditions for formation of the hexagonal modification of CdTe in condensates show that a number of reflections of the hexagonal phase coincide in the interplane distance with the reflection of double diffraction on the boundaries of twins. L S Palatnik et al, Neorg Mater, 7 (ll), 1971, 1960-1965 (in Russian). 30 860. Investigation of structure of iilms of the system Sb,Se,-Bi,S,. (USSR) The structure, electrical resistance and photosensitivity of solid solution Sb$e,-B&S, films, prepared by thermal evaporation of single crystals on glass substrates in vacuum at 5 x 1O-5 torr, are investigated. L G Gribnyak, Neorg Mater, 7 (1 l), 1971,1966-1969 (in Russian). 30 861. Ahnninium oxide films prepared by electron-beam method. (USSR) Some results of investigation of films prepared by electron-beam evaporation of Al,O, in vacuum are presented. The experimental arrangement for electron-beam evaporation of Al,Os is described. AlsOI is evaporated from a water-cooled copper crucible surrounded by a tantalum shield, in which apertures for electron and molecular beams are provided. Spectral and X-ray analyses showed that no tantalum or copper is present in the evaporated A&O, films. A tungsten cathode and Pierce electron gun with optimum power of 3 to 4 kW, emission current of 180 to 230 mA, and accelerating voltage of 14 to 18 kV are employed. Initial vacuum in the working chamber is 1.5 x 1O-Btorr and the pressure increases to 2 x 1O-5 to 1 x 1O-4torr during deposition. It is found that the electron-beam method provides highquality AIBOs films. The electrophysical characteristics of A&O, films can be influenced by admission of oxygen and hydrogen into the vacuum chamber during film deposition. K A Osipov et al, Neorg Muter, 7 (ll), 1971, 1970-1974 (in Russian). 30 862. Preparation of dense SiO, films by low-temperature decomposition of tetraethoxysilane. (USSR) A method of preparing dielectric SiO, films by thermal decomposition of tetraethoxysilane at relatively low temperatures (27&35O”C) in atmosphere of oxygen, used as transport gas, is described. Electrophysical and optical properties of spectrally pure and dense pyrolytic films are considerably improved after low-temperature annealing in nitrogen at 350°C. P S Agalarzade et al, Neorg Mater, 7 (ll), 1971, 1975-1977 (in Russian). 30 863. Influence of conditions of chemical deposition of germanium films on the density of dislocations. (USSR) The dependence of the density of dislocations in autoepitaxial Ge films prepared by reduction of GeCl, by hydrogen, on substrate temperature, concentration of GeCl, in the starting gaseous mixture and the deposition rate, is investigated. G M Gavrilov and V I Evdokimov, Neorg Muter, 8 (l), 1972,33-36 (in Russian). 30 864. Preuaration and investigation of structure of copper e&axial __ films. {USSR) Usine the method of reduction of CuCl and CuBr bv hydrogen in a smalrgap system, epitaxial films of Cu with thickness up to 15 pm have been obtained on MgO with (001) orientation. The deposition rate was 2 to 5 pm/min. Ya M Ksendzov et al, Neorg Mater, 8 (l), 1972, 37-39 (in Russian).
30 865. Preparation of aluminhun oxide films by the pyrolytic method. (USSR) Aluminium oxide films have been prepared by pyrolytic deposition from Al(OC,H,js vapour in nitrogen, on Ge and Si substrates heated to 250 to 500°C with deposition rate up to 444 A/min. Temperature of the evaporator was 150°C. B A Vishnyakov et al, Neorg Mater, 8 (l), 1972, 185-186 (in Russian). 30 866. Vacuum arrangement for deposition of coatings by sputtering. (USSR) A system equipped with three cathodes provides thin-film coatings, including multilayer ones, on elements of optical devices with diameter up to 30 mm. F T Khomyakova et al, Optiko Mekh Prom, No 9, 1971, 56-58 (in Russian). 30 867. Continuous precision thickness measurements by quartz oscillators. (France) The construction of quartz crystal devices for film thickness and rate monitoring is discussed, as well as their application to thin film production. Investigations show that it is necessary to reduce the influence of temperature change on the frequency of the monitoring quartz crystal. During evaporation, this temperature change is caused mainly by radiant heat and condensation. The relation between mass loading and frequency change was also studied especially for thicker films and multilayer systems. With a very precise quartz crystal apparatus, optical films may be controlled with high precision, if reproducible conditions of evaporation and vacuum are maintained. On a basis of these experiments, a fully automatic control unit is developed for the production of optical films as well as for electronic applications. H K Pulker, Le Vide, 26 (154), July-Aug-Sept-Ott 1971, 15C158 (in French). 30 868. Preparation of molybdenum oxide 6lms by reactive sputtering.
(Japan) Molybdenum oxide films containing various amounts of oxygen have been prepared by reactive sputtering. The deposition rate, electrical resistivity, structure, and chemical composition of the films were determined when the oxygen partial pressure was changed from 5 x 10-O torr to 5 x lo-” torr in argon gas (total pressure being maintained at 5 x 1O-s ton). With increasing oxygen partial pressure, the film deposition rate falls drastically at 0, partial pressures of 6 x 1O-5 torr and presumably the resistivity of the films begins to increase rapidly at the same critical oxygen pressure. Electron probe X-ray microanalysis showed the oxygen content of the sputtered films increased with the oxygen partial pressure. From X-ray diffraction analysis, it was found that molybdenum oxide, MoOz appeared suddenly in the sputtered films at the oxygen pressure of 1 x 10M4torr. Mechanisms of oxide formation during reactive sputtering are discussed. T Abe et al, J Vuc Sot Japan, 15 (l), 1972, 15-20 (in Japanese). 30 869. Adhesion and electrical insulation of alumina films, electron beam evaporated onto a steel substrate. (France) The conditions for adherent and insulating films of alumina on steel substrate are described. The alumina was evaporated by electron beam heating at lo-’ torr in residual gases, or at 1O-6 torr in an oxygen atmosphere. Results of investigations on the mechanical behaviour of the films in terms of strain, and on resistivity versus temperature of the dielectric film, are presented. J Gouault et al, Le Vide, 26 (154), July-Aug-Sept-Ott 1971, 178-180 (in French). 30 870. Complexometric method for determination of thickness in vacuum deposited thin metallic films. (France) To obtain absolute values of the thickness of thin metallic films, a layer of vacuum evaporated metal is deposited on an optically flat and chemically cleaned glass plate. The film is then dissolved in an acid in which it forms a coloured complex. The measured adsorbance of the film, using a calibrated spectrophotometer leads to the thickness value. This simple and accurate method gives readily reproducible 289
abstracts
858-870
orientation and disorientation on the morphology of growth of single crystal CdSe films is demonstrated. A V Vanyukov and N M Kondaurov, Neorg Muter, 7 (ll), 1971,19561959 (in Russian). 30 859. The hexagonal modiication of CdTe in condensed films. (USSR) The crystalline structure of CdTe films is investigated as a function of substrate material, composition of condensing vapour, and substrate position with respect to the molecular beam. The films were prepared by evaporation of a compound of stoichiometric composition from a tantalum boat in vacuum at 5 x 1O-5 torr. Additional evaporation of Te or Cd from separate crucibles was used in many cases. The vapour was condensed on substrates of mica, glass, NaCl and KBr heated to 300°C. Electron-graphical and electron-microscopical investigations of the conditions for formation of the hexagonal modification of CdTe in condensates show that a number of reflections of the hexagonal phase coincide in the interplane distance with the reflection of double diffraction on the boundaries of twins. L S Palatnik et al, Neorg Mater, 7 (ll), 1971, 1960-1965 (in Russian). 30 860. Investigation of structure of iilms of the system Sb,Se,-Bi,S,. (USSR) The structure, electrical resistance and photosensitivity of solid solution Sb$e,-B&S, films, prepared by thermal evaporation of single crystals on glass substrates in vacuum at 5 x 1O-5 torr, are investigated. L G Gribnyak, Neorg Mater, 7 (1 l), 1971,1966-1969 (in Russian). 30 861. Ahnninium oxide films prepared by electron-beam method. (USSR) Some results of investigation of films prepared by electron-beam evaporation of Al,O, in vacuum are presented. The experimental arrangement for electron-beam evaporation of Al,Os is described. AlsOI is evaporated from a water-cooled copper crucible surrounded by a tantalum shield, in which apertures for electron and molecular beams are provided. Spectral and X-ray analyses showed that no tantalum or copper is present in the evaporated A&O, films. A tungsten cathode and Pierce electron gun with optimum power of 3 to 4 kW, emission current of 180 to 230 mA, and accelerating voltage of 14 to 18 kV are employed. Initial vacuum in the working chamber is 1.5 x 1O-Btorr and the pressure increases to 2 x 1O-5 to 1 x 1O-4torr during deposition. It is found that the electron-beam method provides highquality AIBOs films. The electrophysical characteristics of A&O, films can be influenced by admission of oxygen and hydrogen into the vacuum chamber during film deposition. K A Osipov et al, Neorg Muter, 7 (ll), 1971, 1970-1974 (in Russian). 30 862. Preparation of dense SiO, films by low-temperature decomposition of tetraethoxysilane. (USSR) A method of preparing dielectric SiO, films by thermal decomposition of tetraethoxysilane at relatively low temperatures (27&35O”C) in atmosphere of oxygen, used as transport gas, is described. Electrophysical and optical properties of spectrally pure and dense pyrolytic films are considerably improved after low-temperature annealing in nitrogen at 350°C. P S Agalarzade et al, Neorg Mater, 7 (ll), 1971, 1975-1977 (in Russian). 30 863. Influence of conditions of chemical deposition of germanium films on the density of dislocations. (USSR) The dependence of the density of dislocations in autoepitaxial Ge films prepared by reduction of GeCl, by hydrogen, on substrate temperature, concentration of GeCl, in the starting gaseous mixture and the deposition rate, is investigated. G M Gavrilov and V I Evdokimov, Neorg Muter, 8 (l), 1972,33-36 (in Russian). 30 864. Preuaration and investigation of structure of copper e&axial __ films. {USSR) Usine the method of reduction of CuCl and CuBr bv hydrogen in a smalrgap system, epitaxial films of Cu with thickness up to 15 pm have been obtained on MgO with (001) orientation. The deposition rate was 2 to 5 pm/min. Ya M Ksendzov et al, Neorg Mater, 8 (l), 1972, 37-39 (in Russian).
30 865. Preparation of aluminhun oxide films by the pyrolytic method. (USSR) Aluminium oxide films have been prepared by pyrolytic deposition from Al(OC,H,js vapour in nitrogen, on Ge and Si substrates heated to 250 to 500°C with deposition rate up to 444 A/min. Temperature of the evaporator was 150°C. B A Vishnyakov et al, Neorg Mater, 8 (l), 1972, 185-186 (in Russian). 30 866. Vacuum arrangement for deposition of coatings by sputtering. (USSR) A system equipped with three cathodes provides thin-film coatings, including multilayer ones, on elements of optical devices with diameter up to 30 mm. F T Khomyakova et al, Optiko Mekh Prom, No 9, 1971, 56-58 (in Russian). 30 867. Continuous precision thickness measurements by quartz oscillators. (France) The construction of quartz crystal devices for film thickness and rate monitoring is discussed, as well as their application to thin film production. Investigations show that it is necessary to reduce the influence of temperature change on the frequency of the monitoring quartz crystal. During evaporation, this temperature change is caused mainly by radiant heat and condensation. The relation between mass loading and frequency change was also studied especially for thicker films and multilayer systems. With a very precise quartz crystal apparatus, optical films may be controlled with high precision, if reproducible conditions of evaporation and vacuum are maintained. On a basis of these experiments, a fully automatic control unit is developed for the production of optical films as well as for electronic applications. H K Pulker, Le Vide, 26 (154), July-Aug-Sept-Ott 1971, 15C158 (in French). 30 868. Preparation of molybdenum oxide 6lms by reactive sputtering.
(Japan) Molybdenum oxide films containing various amounts of oxygen have been prepared by reactive sputtering. The deposition rate, electrical resistivity, structure, and chemical composition of the films were determined when the oxygen partial pressure was changed from 5 x 10-O torr to 5 x lo-” torr in argon gas (total pressure being maintained at 5 x 1O-s ton). With increasing oxygen partial pressure, the film deposition rate falls drastically at 0, partial pressures of 6 x 1O-5 torr and presumably the resistivity of the films begins to increase rapidly at the same critical oxygen pressure. Electron probe X-ray microanalysis showed the oxygen content of the sputtered films increased with the oxygen partial pressure. From X-ray diffraction analysis, it was found that molybdenum oxide, MoOz appeared suddenly in the sputtered films at the oxygen pressure of 1 x 10M4torr. Mechanisms of oxide formation during reactive sputtering are discussed. T Abe et al, J Vuc Sot Japan, 15 (l), 1972, 15-20 (in Japanese). 30 869. Adhesion and electrical insulation of alumina films, electron beam evaporated onto a steel substrate. (France) The conditions for adherent and insulating films of alumina on steel substrate are described. The alumina was evaporated by electron beam heating at lo-’ torr in residual gases, or at 1O-6 torr in an oxygen atmosphere. Results of investigations on the mechanical behaviour of the films in terms of strain, and on resistivity versus temperature of the dielectric film, are presented. J Gouault et al, Le Vide, 26 (154), July-Aug-Sept-Ott 1971, 178-180 (in French). 30 870. Complexometric method for determination of thickness in vacuum deposited thin metallic films. (France) To obtain absolute values of the thickness of thin metallic films, a layer of vacuum evaporated metal is deposited on an optically flat and chemically cleaned glass plate. The film is then dissolved in an acid in which it forms a coloured complex. The measured adsorbance of the film, using a calibrated spectrophotometer leads to the thickness value. This simple and accurate method gives readily reproducible 289