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Al–In–Sb Aluminum–Indium–Antimony system
552
_ , Formula HgS4Al2 HgSe4Al2 HgTe4Al2
%Rg
52.4 33.5 23.3
Composition » %S(Se>Te 33.5 55.3 66.6
Lattice parameters (10-"»m) a c 5.48 5.707 6.004
10.26 10.74 12.11
^,. (kg/m3)
4 080 5 020 5 790
It is very doubtful whether these compounds can be in equilibrium with aluminum. REFERENCE 1. H. Hahn, etc., JIMMA 24, 487
Al-In-P Aluminum-Indium-Phosphorus system The compounds InP and AIP are isomorphous: cubic; space group F43m; 8 atoms to the unit cell; parameters a = 5.87xl0~ 1 0 m and a = 5.467 x 10~10m, respectively [1]; and should form a continuous series of solid solutions. For calculations of the diagram see [2, 3]. REFERENCES 1. Pearson, 2 2. A. Laugier, Met A 6, 210179 3. M. B. Parish, etc., CA 79, 97534u
Al-In-Sb Aluminum—Indium—Antimony system SbAl and InSb are miscible in all proportions [ 1-4] to form (Alln)Sb, primary over most of the system. The miscibility gap of the aluminum-indium system extends only very slightly into the ternary system; less than 10% Sb is sufficient to promote complete miscibility in the liquid. There must be a monotectic reaction, liQ-Ai—* Al + liq.In + (AlIn)Sb, with a probable composition and temperature of 1% Sb, 15% In, 910 °K. The eutectic at the indium end is liq.—► A1 + In + (Alln)Sb at approximately 99% In, 418 °K [1]. For calculations of the pseudobinary InSb-SbAl diagram see [5]. In the solid state the same three phases are in equilibrium in the alloys at the aluminum end, except in the small areas in which antimony and/or indium are in solution in the aluminum.
553 The (Alln)Sb phase is cubic; space group F43m; 8 atoms to the unit cell; lattice parameter and Vickers hardness varying regularly from a = 6.10x 10 _10 m to a = 6.47 x 10- 10 m and Hv= 4 OOOMN/m2 to Hw= 2 000MN/m 2 from the aluminum to the indium end [2]. It is a semiconductor. For optical and electric properties see [6]. Alloys near the SbAl compound are unstable in air [3]. REFERENCES 1. 2. 3. 4. 5. 6.
W. Köster, etc., JIMMA 23, 640 B. V. Baranov, etc., JIMMA 28, 26 L.Yu-Lung, etc., MA 2, 1905 J. Steininger, Met A 4, 110050 M. B. Panish, etc., CA 79, 97534u Y. Agaev, etc., JIMMA 29, 121; Met A 5, 320087
Al-In-Si Aluminum-Indium-Silicon system A monotectic reaction, liq.Ai—>Al+Si + liq.In, should be present in the range 5-15% Si, 10-20% In and a eutectic, liq. —» Al + Si + In, practically coinciding with In, as to both composition and temperature. The use of aluminum-indium-silicon alloys as filler material for brazing aluminum alloys has been proposed [1]. REFERENCE 1. W. J. Werner, etc., Met A 5, 550612
Al-In-Sn Aluminum-Indium-Tin system The gap of miscibility in the aluminum-indium system extends into the ternary diagram, to reach a broad maximum at approximately 55% Sn, 30% In. There is a ternary eutectic, liq. — Al + In3Sn + InSn4 at 51.03% In, 0.14% Al, 390.1 °K [1]. Two other invariant points, probably liq. + In—> Al + In3Sn and liq. + Sn—> Al + InSn4, must lie on the line that runs from the Al-In to the Al-Sn eutectic, very close to the binary liq. + In—> In3Sn and liq. + Sn—>InSn4. In the solid state Al is in equilibrium with In, Sn, In3Sn and InSn4 [1]. In3Sn (74.4% In) is tetragonal; 8 atoms to the unit cell; parameters a = 3.472 x 10- 10 m, c = 4.39 x 10- 10 m. InSn4 (19.4% In) is hexagonal; space group P6/mmm; 5 atoms to the unit cell; parameters a = 3.2 177 x 10~10m, c— 2.9 988 x 10~10m [2]. The solid solubilities of indium and tin in aluminum are
_ , Formula HgS4Al2 HgSe4Al2 HgTe4Al2
%Rg
52.4 33.5 23.3
Composition » %S(Se>Te 33.5 55.3 66.6
Lattice parameters (10-"»m) a c 5.48 5.707 6.004
10.26 10.74 12.11
^,. (kg/m3)
4 080 5 020 5 790
It is very doubtful whether these compounds can be in equilibrium with aluminum. REFERENCE 1. H. Hahn, etc., JIMMA 24, 487
Al-In-P Aluminum-Indium-Phosphorus system The compounds InP and AIP are isomorphous: cubic; space group F43m; 8 atoms to the unit cell; parameters a = 5.87xl0~ 1 0 m and a = 5.467 x 10~10m, respectively [1]; and should form a continuous series of solid solutions. For calculations of the diagram see [2, 3]. REFERENCES 1. Pearson, 2 2. A. Laugier, Met A 6, 210179 3. M. B. Parish, etc., CA 79, 97534u
Al-In-Sb Aluminum—Indium—Antimony system SbAl and InSb are miscible in all proportions [ 1-4] to form (Alln)Sb, primary over most of the system. The miscibility gap of the aluminum-indium system extends only very slightly into the ternary system; less than 10% Sb is sufficient to promote complete miscibility in the liquid. There must be a monotectic reaction, liQ-Ai—* Al + liq.In + (AlIn)Sb, with a probable composition and temperature of 1% Sb, 15% In, 910 °K. The eutectic at the indium end is liq.—► A1 + In + (Alln)Sb at approximately 99% In, 418 °K [1]. For calculations of the pseudobinary InSb-SbAl diagram see [5]. In the solid state the same three phases are in equilibrium in the alloys at the aluminum end, except in the small areas in which antimony and/or indium are in solution in the aluminum.
553 The (Alln)Sb phase is cubic; space group F43m; 8 atoms to the unit cell; lattice parameter and Vickers hardness varying regularly from a = 6.10x 10 _10 m to a = 6.47 x 10- 10 m and Hv= 4 OOOMN/m2 to Hw= 2 000MN/m 2 from the aluminum to the indium end [2]. It is a semiconductor. For optical and electric properties see [6]. Alloys near the SbAl compound are unstable in air [3]. REFERENCES 1. 2. 3. 4. 5. 6.
W. Köster, etc., JIMMA 23, 640 B. V. Baranov, etc., JIMMA 28, 26 L.Yu-Lung, etc., MA 2, 1905 J. Steininger, Met A 4, 110050 M. B. Panish, etc., CA 79, 97534u Y. Agaev, etc., JIMMA 29, 121; Met A 5, 320087
Al-In-Si Aluminum-Indium-Silicon system A monotectic reaction, liq.Ai—>Al+Si + liq.In, should be present in the range 5-15% Si, 10-20% In and a eutectic, liq. —» Al + Si + In, practically coinciding with In, as to both composition and temperature. The use of aluminum-indium-silicon alloys as filler material for brazing aluminum alloys has been proposed [1]. REFERENCE 1. W. J. Werner, etc., Met A 5, 550612
Al-In-Sn Aluminum-Indium-Tin system The gap of miscibility in the aluminum-indium system extends into the ternary diagram, to reach a broad maximum at approximately 55% Sn, 30% In. There is a ternary eutectic, liq. — Al + In3Sn + InSn4 at 51.03% In, 0.14% Al, 390.1 °K [1]. Two other invariant points, probably liq. + In—> Al + In3Sn and liq. + Sn—> Al + InSn4, must lie on the line that runs from the Al-In to the Al-Sn eutectic, very close to the binary liq. + In—> In3Sn and liq. + Sn—>InSn4. In the solid state Al is in equilibrium with In, Sn, In3Sn and InSn4 [1]. In3Sn (74.4% In) is tetragonal; 8 atoms to the unit cell; parameters a = 3.472 x 10- 10 m, c = 4.39 x 10- 10 m. InSn4 (19.4% In) is hexagonal; space group P6/mmm; 5 atoms to the unit cell; parameters a = 3.2 177 x 10~10m, c— 2.9 988 x 10~10m [2]. The solid solubilities of indium and tin in aluminum are