Mutc~riuis C’lrctnistrj~ mtl f%J,sics. 1 I (1984)
AMORPHOUS
BINARY
J.FLECHON,
ALLOYS
F.A. KUHNAST
OBTAINEJ
453
453
459
BY ELECTROLYTICAL
26 March
METHODS
and A. RASHID
Laboratoire de Physique des Dep8ts Mgtalliques, 54506 Vandoeuvre Les Nancy Cedex (France)
Received
AND CHEMICAL
1984; accepted
Universite
de Nancy
1, BP 239
2 Mai 1984
ABSTRACT obtained by splat cooling condensation on a Amorphous alloys, generally cold support or sputtering, were prepared in our laboratory at ambient temperain liquid phase, ture by two other methods. The first one, the oxidoreductlon gives films, the thickness of which is 500 to 2000 A, deposited on an isolating suppo1.t - glas, plastic or ceramic. The second one, electrolysis of adapted allows us to obtain some thick layers the thickness of which is solutions, in this case, 1 to 100 microns. The support is a conductor, for example, a copper leaf. Experiments reveal a local order characterized by the absence of diffraction peaks in the experimental interference function which is chiefly formed by diffuse rings. We can obtain amorphous materials at ambient temperature if the bath composition leads to an alloy which contains at least 15% of _Loms of the metalloid in the case of phosphorous, and 20% of atoms with boron. The upper limits are, respectively, 25 and 35%. It does not seem possible to obtain a bigger quantity of metalloid with these two methods. The local order can be represented by an assembly of clusters in which chemical bonds exist between the metal and metalloid atoms. Every cluster is surrounded by a domain where atomic position is distributed following a Gaussian function. Beyond that the material is completely amorphous.
INTRODUCTION The of
usual
small
variable turning films for
methods
area
homogeneity cylinder
deposited
example,
and
metallic
by evaporation composition
glasses
lead to either
on a cold support realised
by
1.11
thin films
, or ribbons of
an ultra-rapid
quench
on
a
12 1 . We have tried to obtain some metallic glasses as thin on an insulator
coppir
which give suitable
0254-0584/84/$3.00
of preparing
obtained
l-4-61
[3] and as thick layers formed on a conductor,
, by some rapid processes
reproducible
of relatively
small
cost
samples.
0 ElsevierSequoia/Printedin The Netherlands
454 prepared
by homogeneous
oxidoreduction
the layers by heterogeneous
The films were
oxidoreduction
or electrolysis.
We systematically selves
to
threw
those
having
away all the crystallized a structure
presenting
in the liquid phase,
deposits
only
and we limited our-
local
order,
as shown
by
X-ray analysis. n
The
film
thickness
generally
varied
from
: that of the layers
500 to 5000 A
from 1 to 100 urn. We
studied
four
metalloid. although
binary
Table
1
couples
defines
its composition
Table 1. Percentage NiP
observed
metalloid.
the
domain
of Metalloid
in which
by
alloy
a metal
remains
and a
amorphous
types
a higher
in Amorphous
Sample
COB
of behaviour
closely
dependent
The boron atom is lighter and smaller
tly, we obtained
formed
the
(in Atoms) Present
COP
two
glasses
varies.
NiB
We
of metallic
percentage
with
on the nature
than phosphorus
this element
of the
and consequen-
in the amorphous
alloy
than with phosphorus. We have examined
:
successively
- the deposits obtained, - their characteristics, - the evolution
METHODS
It has
phosphide
been
known
the structure
which
or
metallic
protection plating
indeed
We have been are
is a metallic
examining
formed
level,
electroless
in the year 1947, the amorphous
tions
for more a nickel
than 50 years
with
a
glass
Brenner
method lead
to
formed
on the
these materials nickel
or
since
cobalt
salt
large
and
at that time. 181 discovered
surfaces.
Chemical
of
'Kanigen
production
and phosphorus.
any fundamental
1956 [3]
in
171.
and Riddel
by nickel
state did not provoke
that
salt and sodium hypo-
of the formed deposit was not studied
on an industrial
important
nickel-plating
chemistry
or palladium,
and this was used by Feigh and Frankel
this reaction most
in analytical
traces of platinum
are needed
Of course,
Nickel'
on heating
oxidoreduction
order to detect
the
resistivity
OF PREPARATION
Homogeneous
Using
of the electrical
But
research.
. The retained solu-
sodium
hypophosphite
or
potassium
hydroboride
generally
complexed
of this salt and its great reducing The
bath
compositions
For example,
vary
with
ammonia,
power in aqueous
as
a function
of
given
the instability
media.
the
purpose
of
the
deposit.
:
we used
l/2 1 of solution contains -2 .?t long NL with 40 g/l; i.e. 2 x 10 -2 atg P with 40 g/l; i.e. 4.82 x 10
1) In the case of nickel-phosphorus:
:
125 cm3 of Ni(CH3C00)2.4H20 125 cm3 of NaH2P02.H20 250 cm3 of NaCH3COO
with 40 g/l (buffer)
a few drops of PdC12 with 0.096 g/l; i.e. 54 X low5 iong Pd
2) In the case of nickel-boron: 400 cm3 of Ni(CH3C00)2.4H20 200 cm3 of NH40H
1 1 of solution
2+
contains
:
obtained
in the same manner.
with 65 g/l
to 29 volumes
4 g of KBH4 dissolved
in 50 cm3 of NH40H
10 cm3 of PdC12 with 0.5 g/l; 340 cm3 of water. Cobalt-boron
and cobalt-phosphorus
Object-slides, film
was
suitably
formed
The reaction
on
them
mechanism
ned. We can write,
B1-l;+ 3H20 + H2B03-
same
described
the purely
the
time
as
bath.
a powder
A bright
formed
the same whatever
the metalloid
in the case of the nickel-boron
4Nio + H2BO-3
metallic
in the liquid. concer-
alloy:
+ 5H20
+ 4H2
baths
of
were
chemical
for
technique
The
efficiency
The metalloid
the
leads
alloy
way,
in the
was
previously
Indeed, we have observed precipitate
such as palladium
the homogeneous formed
oxidoreduction
oxidoreduction.
similar.
to a metallic
catalyst
same
can provoke
preceding.
The precision
role in the process.
homogeneous
are probably
a deposit-promoting In
the
or heterogeneous
mechanisms
solutions.
a current
plays an important
used
and electrolysis
the electrolysis to
the same
in the
oxidoreduction
Both process
dilute
were
dipped
is approximately
seem that hydrogen
Heterogeneous
sence
alloys
were
+ H2 + BO +'ZOH- + H20
It would
The
at
for example,
4Ni++ + BH4- + 80H-+
H2BO-3
cleaned,
only in the pre-
chloride
in the very
case of the nickel-boron oxidoreduction
in such
deposit,
which aligns
a quantity
that
that
itself
we observed
1101 above unity.
was assayed
was about
by absorptiometry
one percent,
as allowed
using a few tens of micrograms. by Beer's
law relative
to the
456
absorbed
We
luminous
utilized
monochromatic
carminic
:
flux
acid
in the
1.9 i
., , and phosphomolybdic
case of boron
blue i 3 1 to detect the phosphorus. L. J STRUCTURE The as
metallic
films
a significant
appeared
in
substances with
solution.
using
an X-ray
film
of
thickness
layers thicker
on an insulator
of powders
the
a resolution
The
formed
quantity
This
with
were
the
phenomenon
diffractometer
l/10
degree,
allowed
only
allowed
equipped
a gonlometer a
study
than 30 pm were directly
deposited
with
examined
at the same
same composition us
to characterize
with
these
a step-by-step
and
a scintillation
the
electron
without
time
as the films
device counter.
microscope.
any particular
The
pi‘ecau-
tion.
ilr) 2_
iii) \
P
l_
l-
0
_A_-__
-1
0.5
0
1
1.5
2
2.5
Fig.1. Experimental interference of amorphous Ni 66B34 (powder)
Fig. 1 and 2 indicate bient
temperature
on
and an electrolytic rent
diffusion
diagrams
and
shows
that
the
absence
ground 19,111
of
a powder
68B32 distortion and there
peaks
crystals
peaks
or the borides
then
function
using
chemical
for the gaseous
standardised.
The
relationship
observed
at am-
techniques,
diffusion, similarity
between
the
incoheof both samples.
in which only local order exists characterized and
the presence
of a strong
continuous
back-
. were placed under a classical
appeared.
This
the same condi-,:ions as previously and narrow
obtained
corrected
is a structural
glasses
sharp
interference
of Ni66B34
layer Ni
When both substances of 450°c,
Fig.2. Experimental interference function of amorphous Ni68B3* (layer)
the experimental
They are binary metallic by
function
appear,
identified
is obvious described:
the position
on Fig.
vacuum at the temperature 3 and 4, obtained
the continuous
of which
as Ni 3B , Ni2B, Ni4B3.
background
characterizes
either
under
is lower the metal
Ni3B 0 Ni2B 0
Ni4B3 V
3
25
30
35
i’u
%O
Fig.3. Diagram X of crystallised Ni66B34 powder(XCoKa)
z5
30
35
aa
Fig.4. Diagram X of crystallised Layer(XCoYcx) Ni68B32
The metallic glasses obtained by these methods are somewhat analogous. Compared to the crystallized substances, all the physicochemical properties are different. As
an
example, let us look at the electrical behaviour.
ELECTRICAL PROPERTIES Since an increase in thermal energy modifies their structure, these materials are metas-tableand their electrical conductivity increase at the same time as the matrix
becomes
ordered. Likewise, the average temperature coeffi-
cient of the electric resistance, R 0 ’ varies with the degree of order. In order to show these properties, it suffices to place under vacuum either an amorphous film OF a layer and then to vary its temperature step-by-step from ambient to 450°C, continuously recording its electrical resistance. The duration at a given temperature depends on the isothermal rate of variation of the resistance. When this speed tends towards zero, it suffices to return to ambient temperature to measure R
Successive cycles between 0 and 8 OC revea0 led a relative reversibility as long as we did not exceed the stabilization
level. Fig. 5 shows the compared values of the resistivities at ambient temperature and at 450°C for the chemical Ni66B34 and electrolytic N175Bz5 alloys as a function of the deposit thickness. If we take as c first
approximation,
that the electrical conductivity c expressed, in kinetic theory, the the classical formula:
is
458
where
A = electronic
mean free path and v
F
= electron
velocity
at the Fermi
level.
Fig.5. Compared values of the resistivity (films, ---- layers) We imagine the
electronic
very little, Fig
that
the thermal
mean
free
increases
6 and 7 show, as a function
path
energy and
as a function
creates
as
order
the velocity
until the free enthalpy
for two of these of the annealing
alloys
of the thickness
in the matrix at the Fermi
minimum
is reached.
(film and layer),
temperatures
of successive
p,
to increase level varies
the variation levels.
10-6”c-!
2000 t
1500
20% B
i 1000 24.7% 3
500
,
:i:-,_
/
0 OC C
Fig.G.Variation 0; flo (successive annealings)for films
Fig.7. Variation of R annealings) for layer:
(successive
459
Two points 1) the very
are to be noted: low values
interest
for practical
2) their
sudden
The phonon
increase
to the amorphous
state,
a property
of
at the crystallization. is important
predominance
range order whereas
relative
of R.
applications;
in a medium
it is less in a disordered
where
there
exists
long
matrix.
CONCLUSION The
chemical
of amorphous
ple,
rapid
and electrolytical
alloy and
all classical
of
films
methods
represent
two means
and layers of the metal-metalloid
relatively
physicochemical
low
cost.
studies
The samples
of metallic
obtained
glasses
of preparation
type. They are simcan be used
for
cI 11.!
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A.K. Sinha, B.C. Giessen and D.E. Polk, Treatise Vol. 3 1 Ed.by N.B. Hannay, 1976
2
R.E. Maringer, C.E. Mobley and E.W. Callings, Rapidly Quenched Metals, Vo1.23, 1976, p.87
3
J. FlCchon,
Thesis,
4
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P.J. Cote, Solid State Communications,
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F.A. Kuhnast, A. Obaida and A. Rashid, DBp6ts J. FlBchon, F. Machizaud, Electrolytiques amorphes de NiB et COP, B. Sot. Chim., 7,8, 1982, 257
7
Feigl and Frankel,
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A. Brenner
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F.A. Kuhnast,
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G. Milazzo,
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