- Email: [email protected]
An overview of silicon growing processes
248
World Abstracts on Microelectronics and Reliability
SiO2 films exhibited a homogeneous microstructure. All other films were found to consist of discrete columns with preferential growth in the directions of evaporation. In the case of ZnS, MgF2 and TiO 2 films evaporated onto heated substrates the columns are relatively well-formed crystallites. ThF 4 films were found to have a strongly disordered structure and AI20 3 films evaporated on heated substrates were practically amorphous. On the magnetic properties of dislocations in silicon. U. SCHMIDT, E. WEBER, H. ALEXANDER and W. SANDER, Solid St. Commun. 14, 735 (1974). The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformeh Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the 60° dislocations are coupled along limited segments giving rise to superparamagnetic resonance.
Transport properties of conduction electron in n-type inversion layers in (100) surfaces of silicon. K. F. KOMATSUBARA, K. NARITA, Y. KATAYAMAand N. KOTERA..J. Phys. Chem. Solids 35, 723 (1974). The conductivities of n-type inversion layers in (100) surfaces of p-type silicon were measured extensively as functions of electron density in the inversion layer, the ambient temperature and the applied magnetic field. Measurements were made on the carefully fabricated four "classes" of MOS field-effect transistors whose maximum mobilites of 4.2 K were 14,000, 8000, 6800 and 1500 cm2/V, sec, respectively. From the temperature dependence of the mobility, dominant momentum scattering was reasonably ascribed to surfon at 100 ~ 300 K, and degenerate or non-degenerate coulomb scattering at lower temperatures as treated by Stern and Howard. From the curves of conductivity vs temperature at low temperatures and low electron concentration for specimens with high mobilities, an activation energy of 1.2 MeV, relating to the shallow bound states associated with the lowest electron sub-band, was observed. The conductivity axx of the inversion layer in a strong transverse magnetic field showed behaviors like those of completely free electrons without effects belonging to its material in its oscillation pattern. That is, the peak value of ax~ as a function of the gate voltage Vg depended only on the Landau index. The t r as a function of the magnetic field H at a constant V9 showed a similar Shubnikov-de Haas (SdH) type oscillation to that of three dimensional one. The SdH oscillation gave an "apparent" 0-value 0* which ranges from 2 to 5 depending on the surface carrier density n~, due to the change in the ratios of the widths of the Landau levels to the level separation. The "reasonable" 0-value of the conduction electrons in the inversion layer has been determined using a modified tilted magnetic field method. The g-value at the fixed magnetic field was independent of surface carrier density n~ and tended to 2 in the extreme strong magnetic field. Discussion is made of the 0-value relating to the Landau level width and the energy gaps in the density of states under strong magnetic field. An overview of silicon growing processes. R. E. LORENZINI, F. S. NEFF and D. J. BLAIR. Solid St. Technol. 33 (1974). A comparison between float zone (FZ) and Czochralski (CZ) crystal growing techniques is presented. The evolution of CZ type furnaces from the mid-1950s is described along
with a detailed discussion of the three major developments: (a) zero dislocation crystal growth; (b) automatic diameter control; and (c) large charge sizes. A look into possible future trends in the crystal growing field is also included.
The influence of the silicon and oxide layer surface treatment on the effective defect charge density in a MOS structure. (Vplyv pripravy povrchu kremika a oxidovej vrstvy na hustotu efektivneho poruchov6ho nfiboja MOS gtruktfiry.) O. CSABAY and H. FRANK. Elektrotechnickj, ~'asopis 24, (4) 228 (1973). (In Czechoslovakian). The paper presents the results of an investigation into the influence of eight different silicon surface preoxidation treatment processes, of the precision of cutting silicon plates in different crystallographic planes, of the oxide layer thickness, and of alloying the oxide layer with phosphorus, on the effective defect charge density in MOS structures. High frequency space charge layer capacitance of strongly inverted semiconductor surfaces. M. J. McNuT~ and C. T. SAH. Solid St. Electron. 17, 377 (1974). The finite spatial extension of the inversion layer minority carriers shunts the dielectric capacitance of the inversion layer and increases the high frequency semiconductor surface space charge layer capacitance in the strong inversion range by about 5 per cenl. This distributed minority carrier distribution also gives rise to a small (about 1 per cent) high frequency capacitance minimum near the onset of strong surface inversion. A simple two-lump model is developed which is accurate to within 0.4 per cent of the numerical solution obtained from the exact transmission line model. Applied gate voltages at the capacitance minimum are presented graphically as a function of oxide thickness with the substrate impurity concentration as a parameter. Surface quantization effect is not taken into account. *Junction capacitance techniques to characterize radiation damage in silicon. J. W. DIEBOLD and H. M. DEANGELIS, Air Force Cambridge Res. Labs, Hanscom Field, Mass., U.S.A. AFCRL-TR-73-0157. (Mar. 1973). Capacitancevoltage and transient capacitance measurements were made on Schottky barrier-on-phosphorous-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, 6°Co-';-rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. Direct observation of split-off exciton and phonon structures in absorption spectrum of silicon. T. NISmMO~ M. TAKEDA and Y. HAMAKAWA. Solid St. Commun. 14, 627 (1974) The split-off band exciton of silicon has been observed in the absorption spectrum by using a wavelength modulation technique. The spin orbit splitting of the valence band is determined to be 44.1 _+ 0.3 MeV at I-8°K. The structures associated with some two-phonon indirect transitions have also been observed in the absorption spectrum. Study of charge storage behaviour in metal-alumina-silicon dioxide-silicon (MAOS) field effect transistor. S. SATOand T. YAMAGUCHI. Solid St. Electron. 17, 367 {1974). The basic characteristics and charge storage behavior of metalalumina-silicon dioxide-silicon (MAOS) field effect transistors have been investigated as a function of the oxide thickness. The typical charge storage behaviors have al~<~
World Abstracts on Microelectronics and Reliability
SiO2 films exhibited a homogeneous microstructure. All other films were found to consist of discrete columns with preferential growth in the directions of evaporation. In the case of ZnS, MgF2 and TiO 2 films evaporated onto heated substrates the columns are relatively well-formed crystallites. ThF 4 films were found to have a strongly disordered structure and AI20 3 films evaporated on heated substrates were practically amorphous. On the magnetic properties of dislocations in silicon. U. SCHMIDT, E. WEBER, H. ALEXANDER and W. SANDER, Solid St. Commun. 14, 735 (1974). The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformeh Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the 60° dislocations are coupled along limited segments giving rise to superparamagnetic resonance.
Transport properties of conduction electron in n-type inversion layers in (100) surfaces of silicon. K. F. KOMATSUBARA, K. NARITA, Y. KATAYAMAand N. KOTERA..J. Phys. Chem. Solids 35, 723 (1974). The conductivities of n-type inversion layers in (100) surfaces of p-type silicon were measured extensively as functions of electron density in the inversion layer, the ambient temperature and the applied magnetic field. Measurements were made on the carefully fabricated four "classes" of MOS field-effect transistors whose maximum mobilites of 4.2 K were 14,000, 8000, 6800 and 1500 cm2/V, sec, respectively. From the temperature dependence of the mobility, dominant momentum scattering was reasonably ascribed to surfon at 100 ~ 300 K, and degenerate or non-degenerate coulomb scattering at lower temperatures as treated by Stern and Howard. From the curves of conductivity vs temperature at low temperatures and low electron concentration for specimens with high mobilities, an activation energy of 1.2 MeV, relating to the shallow bound states associated with the lowest electron sub-band, was observed. The conductivity axx of the inversion layer in a strong transverse magnetic field showed behaviors like those of completely free electrons without effects belonging to its material in its oscillation pattern. That is, the peak value of ax~ as a function of the gate voltage Vg depended only on the Landau index. The t r as a function of the magnetic field H at a constant V9 showed a similar Shubnikov-de Haas (SdH) type oscillation to that of three dimensional one. The SdH oscillation gave an "apparent" 0-value 0* which ranges from 2 to 5 depending on the surface carrier density n~, due to the change in the ratios of the widths of the Landau levels to the level separation. The "reasonable" 0-value of the conduction electrons in the inversion layer has been determined using a modified tilted magnetic field method. The g-value at the fixed magnetic field was independent of surface carrier density n~ and tended to 2 in the extreme strong magnetic field. Discussion is made of the 0-value relating to the Landau level width and the energy gaps in the density of states under strong magnetic field. An overview of silicon growing processes. R. E. LORENZINI, F. S. NEFF and D. J. BLAIR. Solid St. Technol. 33 (1974). A comparison between float zone (FZ) and Czochralski (CZ) crystal growing techniques is presented. The evolution of CZ type furnaces from the mid-1950s is described along
with a detailed discussion of the three major developments: (a) zero dislocation crystal growth; (b) automatic diameter control; and (c) large charge sizes. A look into possible future trends in the crystal growing field is also included.
The influence of the silicon and oxide layer surface treatment on the effective defect charge density in a MOS structure. (Vplyv pripravy povrchu kremika a oxidovej vrstvy na hustotu efektivneho poruchov6ho nfiboja MOS gtruktfiry.) O. CSABAY and H. FRANK. Elektrotechnickj, ~'asopis 24, (4) 228 (1973). (In Czechoslovakian). The paper presents the results of an investigation into the influence of eight different silicon surface preoxidation treatment processes, of the precision of cutting silicon plates in different crystallographic planes, of the oxide layer thickness, and of alloying the oxide layer with phosphorus, on the effective defect charge density in MOS structures. High frequency space charge layer capacitance of strongly inverted semiconductor surfaces. M. J. McNuT~ and C. T. SAH. Solid St. Electron. 17, 377 (1974). The finite spatial extension of the inversion layer minority carriers shunts the dielectric capacitance of the inversion layer and increases the high frequency semiconductor surface space charge layer capacitance in the strong inversion range by about 5 per cenl. This distributed minority carrier distribution also gives rise to a small (about 1 per cent) high frequency capacitance minimum near the onset of strong surface inversion. A simple two-lump model is developed which is accurate to within 0.4 per cent of the numerical solution obtained from the exact transmission line model. Applied gate voltages at the capacitance minimum are presented graphically as a function of oxide thickness with the substrate impurity concentration as a parameter. Surface quantization effect is not taken into account. *Junction capacitance techniques to characterize radiation damage in silicon. J. W. DIEBOLD and H. M. DEANGELIS, Air Force Cambridge Res. Labs, Hanscom Field, Mass., U.S.A. AFCRL-TR-73-0157. (Mar. 1973). Capacitancevoltage and transient capacitance measurements were made on Schottky barrier-on-phosphorous-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, 6°Co-';-rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. Direct observation of split-off exciton and phonon structures in absorption spectrum of silicon. T. NISmMO~ M. TAKEDA and Y. HAMAKAWA. Solid St. Commun. 14, 627 (1974) The split-off band exciton of silicon has been observed in the absorption spectrum by using a wavelength modulation technique. The spin orbit splitting of the valence band is determined to be 44.1 _+ 0.3 MeV at I-8°K. The structures associated with some two-phonon indirect transitions have also been observed in the absorption spectrum. Study of charge storage behaviour in metal-alumina-silicon dioxide-silicon (MAOS) field effect transistor. S. SATOand T. YAMAGUCHI. Solid St. Electron. 17, 367 {1974). The basic characteristics and charge storage behavior of metalalumina-silicon dioxide-silicon (MAOS) field effect transistors have been investigated as a function of the oxide thickness. The typical charge storage behaviors have al~<~