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electrolyte interface
A44 1 Surface Science 0 North-Holland
101 (1980) 261-268 Publishing Company
ANISOTROPY OF THE DIELECTRIC PROPERTIES OF THE SOLID/ELECTROLYTE INTERFACE Calculations of the dielectric surface excess for gold and silver electrodes W. PLIETH,
H.‘BRUCKNER
and
H.-J. HENSEL
Freie Unicersitiit Berlin, Ins~itutfiir Physikalische Chemie. Takustrasse 3, D-10%) Berlin 33, West Germany Received
17 October
1979; accepted
for publication
12 February
1980
The dielectric properties of the double layer at a solid/electrolyte interface are described by the concept of the “dielectric surface excess” consisting of two components. the surface excess of the complex dielectric constant and the surface excess of the complex dielectric loss function. This separation takes into account uniaxial anisotropy of the double layer region. The two components of the dielectric surface excess were calculated for gold and silver electrodes with various chemisorbed layers.
Surface Science @ North-Holland
101 (1980) 269-276 Publishing Company
OPTICAL AND MODULATED OPTICAL INVESTIGATION OF THE SEMICONDUCTOR-OXIDE-ELECTROLYTE INTERFACE IN GaAs * R.P. SILBERSTEIN and Fred H. POLLAK Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210. USA Received
I1 October
1979
Using a high sensitivity rotating light-pipe reflectometer, we have studied the anodization and dissolution process for GaAs oxide films in situ using a tartaric acid/glycol/water electrolyte. Different stages in the oxidation4issolution process can be easily identified, and the film thickness can be calibrated interferometrically in situ. In conjunction with this study, we have investigated the electrolyte electroreflectance spectra of GaAs in the vicinity of the Ee transition (direct gap at k = 0), and have observed a pronounced excitonic feature which is very sensitive to surface fields. We have identified this effect as a type of interference phenomenon within the semiconductor depletion region. This feature and the observed Franz-Keldysh oscillations are thus used to opfically study the surface electric fields and interface states, with and without an oxide layer.
101 (1980) 261-268 Publishing Company
ANISOTROPY OF THE DIELECTRIC PROPERTIES OF THE SOLID/ELECTROLYTE INTERFACE Calculations of the dielectric surface excess for gold and silver electrodes W. PLIETH,
H.‘BRUCKNER
and
H.-J. HENSEL
Freie Unicersitiit Berlin, Ins~itutfiir Physikalische Chemie. Takustrasse 3, D-10%) Berlin 33, West Germany Received
17 October
1979; accepted
for publication
12 February
1980
The dielectric properties of the double layer at a solid/electrolyte interface are described by the concept of the “dielectric surface excess” consisting of two components. the surface excess of the complex dielectric constant and the surface excess of the complex dielectric loss function. This separation takes into account uniaxial anisotropy of the double layer region. The two components of the dielectric surface excess were calculated for gold and silver electrodes with various chemisorbed layers.
Surface Science @ North-Holland
101 (1980) 269-276 Publishing Company
OPTICAL AND MODULATED OPTICAL INVESTIGATION OF THE SEMICONDUCTOR-OXIDE-ELECTROLYTE INTERFACE IN GaAs * R.P. SILBERSTEIN and Fred H. POLLAK Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210. USA Received
I1 October
1979
Using a high sensitivity rotating light-pipe reflectometer, we have studied the anodization and dissolution process for GaAs oxide films in situ using a tartaric acid/glycol/water electrolyte. Different stages in the oxidation4issolution process can be easily identified, and the film thickness can be calibrated interferometrically in situ. In conjunction with this study, we have investigated the electrolyte electroreflectance spectra of GaAs in the vicinity of the Ee transition (direct gap at k = 0), and have observed a pronounced excitonic feature which is very sensitive to surface fields. We have identified this effect as a type of interference phenomenon within the semiconductor depletion region. This feature and the observed Franz-Keldysh oscillations are thus used to opfically study the surface electric fields and interface states, with and without an oxide layer.