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Atomic hydrogen recombination on copper surface
Vacuum/volume 43/numbers Printed in Great Britain
5-7lpage
0042-207x/92$5.00+.00 Pergamon Press Ltd
44711992
Abstract Atomic hydrogen recombination on copper surface M MozetP, M Kveder and F Brecelj, InStitut za elektroniko vukuumsko tehniko, Teslova 30, 61000 Ljubljana, Sloveniu
in
and M DrobniT, Institute Slovenia
‘JoJoief Stefan’, Jamova 39, 61000 LjubQana,
A one-dimensional potential well for hydrogen copper surface is used for a parametric study
atoms at the of the atomic
hydrogen recombination process. Firstly, the reflectivity coefficients of hydrogen atoms at various energies are determined using the Runge-Kutta integration method. Secondly, some low energy eigenstates of the potential well are numerically calculated and their occupation ratio according to the Boltzmann distribution is determined for different temperatures. The results of both calculations are in good agreement with experimental data on the recombination coefficient obtained by other authors.
447
5-7lpage
0042-207x/92$5.00+.00 Pergamon Press Ltd
44711992
Abstract Atomic hydrogen recombination on copper surface M MozetP, M Kveder and F Brecelj, InStitut za elektroniko vukuumsko tehniko, Teslova 30, 61000 Ljubljana, Sloveniu
in
and M DrobniT, Institute Slovenia
‘JoJoief Stefan’, Jamova 39, 61000 LjubQana,
A one-dimensional potential well for hydrogen copper surface is used for a parametric study
atoms at the of the atomic
hydrogen recombination process. Firstly, the reflectivity coefficients of hydrogen atoms at various energies are determined using the Runge-Kutta integration method. Secondly, some low energy eigenstates of the potential well are numerically calculated and their occupation ratio according to the Boltzmann distribution is determined for different temperatures. The results of both calculations are in good agreement with experimental data on the recombination coefficient obtained by other authors.
447