David J. SMITH Center for Solid State Science and Department of Physics, Arizona State (/niuersi!y, Tempe, AZ 85287, USA Received
25 April 1986; accepted
for publication
18 June 1986
Electron microscopes with atomic resolution have recently been used to study surfaces and to observe surface processes in real-time. The role of image simulations in confirming the interpretation of surface profile images is discussed and recent applications of the profile imaging technique to study semiconductors, oxides, the oxidation of metals, and small metal particles are briefly reviewed. Finally, the accumulation of metal deposits on some oxide and semiconductor surfaces due to electron-stimulated desorption processes is described.
and H. NIEHUS Institul fiir Grenzfliichenforschung und Vakuumphysik der KFA Jiilich, P.O. Box 1913, D-51 70 Jiilich, Fed. Rep. of Germany Received
14 March
1986; accepted
for publication
30 April 1986
The location of the outermost atomic layer relative to the second one of the reconstructed clean Au(llO)-(1 x 2) surface has been directly determined by large angle (165O) low energy (2000 ev) Ne+,Ne’ backscattering. The surface forms the expected “missing row” structure with a 0.20&0.07 A contraction of the first layer relative to the bulk determined atomic positions. Temperature dependent measurements (300 < T< 800 K) have been performed at a scattering angle of 123O using Na+ in order to follow the phase transition from the (1 X 2) to the (1 x 1) structure. The ion scattering data measured in the (112) azimuth show a pronounced decrease of the characteristic slopes for the (1 X 2) structure and an increase of signals related with the (1 X 1) structure upon temperature increase above 700 K. We also find evidence for the existence of monoatomic steps coexisting with both structures.