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Author index volume 27
MI~ELECTRONIC Eh'GINE]D~ ELSEVIER
Microelectronic Engineering 27 (1995) 551-564
Author Index Volume 27 Abadal, G., s e e Barniol, N. Abeln, G.C., T.-C. Shen, J.R. Tucker and J.W. Lyding, Nanoscale STM-patterning and chemical modification of the Si(100) surface Abstreiter, G., s e e Gondermann, J. Allara, D.L., s e e Lercel, M.J. Alvarado, S.F., s e e Johnson, M.B. Anastasi, P., s e e Turcu, I.C.E. Anbe, T., s e e Ito, A. Andreev, S.S., s e e Louis, E. Antoniadis, D.A., s e e Burkhardt, M. Aono, M., s e e Grey, F. Artemyev, M.V., s e e Gurin, V.S. Arthur, G. and B. Martin, The effect of defocus on the printability of sub-micron 5X reticle defects Arthur, G. and B. Martin, Sub-half-micron contact hole definition by I-line optical lithography Atoda, N., s e e Oizumi, H. Aymerich, X., s e e Barniol, N.
Baaibergen, J.-J., s e e van Helleputte, H.R.J.R. Babich, E., s e e Maldonado, J.R. Babin, S. and A. Tomnikov, Artificial refractive index gratings manufacturing using electron beam lithography Baciocchi, M., s e e Raptis, I. Barniol, N., F. P6rez-Murano, G. Abadal, J.H. Ye and X. Aymerich, Field induced nanomodification on silicon (100) with scanning tunneling microscopy Barth, R., J. Siewert, B. Spangenberg, Ch. Jaekel, H. Kurz, B. Utz, W. Prusseit and H. Wolf, High-Tc air-bridge microbolometers fabricated by silicon micromachining technique Bartha, J.W., J. Greschner, M. Puech and P. Maquin, Low temperature etching of Si in high density plasma using SF6/O 2 Bastiaensen, R.K.F.J., s e e Bijkerk, F. Basting, D., s e e Endert, H. Bauch, L., M. B6ttcher and U. Jagdhold, Resist process to join electron beam lithography and photolithography Beaumont, S.P., s e e Murad, S.K. Benveniste, A., s e e Prior, R. Biermann, U.K.P., s e e de Koning, H. Bijkerk, F., s e e Louis, E.
31- 34 23- 26 83- 86 43- 46 27- 30 295-298 527-530 235-238 307-310 17- 22 109-112 271-274 279-282 317-320 31- 34 547-550 303-306 167-170 417-420 31- 34
499-502 453-456 299-301 221-224 371-374 439-444 147-150 421-424 235-238
552
Author
Index Volume 27
Bijkerk, F., L.A. Shmaenok, A.P. Shevelko, R.K.F.J. Bastiaensen, C. Bruineman and A.G.J.R. van Honk, A high-power, low-contamination laser plasma source for extreme UV lithography Binder, H., s e e Weil3, M. Birk, H., s e e Kramer, N. Bischoff, L., J. Teichert and E. Hesse, Interconnection lines following the surface topography fabricated by writing focused ion beam implantation Biattner, P., S.S.H. Naqvi, P. Ehbets and H.P. Herzig, Diffractive structures for testing nano-meter technology B6rnig, K. and W. Henke, The impact of polarized illumination on imaging characteristics in optical microlithography B6ttcher, M., s e e Bauch, L. Bourgoin, J.-P., s e e Johnson, M.B. Bracher, B.H. and R. Jonckheere, Profile analysis and the isofocal threshold in SEM metrology Br/iuer, S., s e e Urban, J. Brogardt, R., F. G6tz and B. Rapp, 100 keV electron beam lithography process for high aspect ratio submicron structures Bruinemau, C., s e e Bijkerk, F. Briinger, W., E.-B. Kley, B. Schnabel, I. Stolberg, M. Zierbock and R. Plontke, Low energy lithography; energy control and variable energy exposure Briinger, W.H., H. L6schner, G. Stengl, W. Fallmann, W. Finkelstein and J. Melngailis, Evaluation of critical design parameters of an ion projector for 1 Gbit DRAM production Brunner, J., s e e Gondermann, J. Buchmann, L.-M., Multi-level-patterning using ion species of different penetration depth Buck, P.D., s e e Grenon, B.J. Burger, J., s e e Jansen, H. Burkhardt, M., S. Silverman, H.I. Smith, D.A. Antoniadis, K.W. Rhee and M.C. Peckerar, Gap control in the fabrication of quantum-effect devices using X-ray nanolithography Butte, E., s e e Paneva, R.
Cameron, N.I.,
s e e Murad, S.K. Lukey, P.W. s e e Maes, J.W.H. Chapman, P.F., s e e Tiberio, R.C. Chen, L., s e e Huq, S.E. Chen, Y., s e e Kupka, R.K. Cheung, R., s e e van der Drift, E. Chu, J.O., s e e Lee, K.Y. Ciube, F., s e e Dfindliker, R. Craighead, H.G., s e e Lercel, M.J.
Caro, J., Caro, J.,
see
299-301 405-408 47- 50 351-354 543-546 217-220 371-374 539-542 531-534 113-116 139-142 299-301 135-138
323-326 83- 86 335-338 225-230 475-480
307-310 509-512 439-444 87- 90 99-103 67- 70 95- 98 311-316 481-485 79- 82 205-211 43- 46
Dahm, G., I.W. Rangelow, P. Hudek and H.W.P. Koops, Quartz etching for phase shifting masks D~indliker, R., S. Gray, F. Clube, H.P. Herzig and R. V61kel, Non-conventional techniques for optical lithography
263-266 205-211
Author
Index
Volume
27
553
Daraktchiev, I.S., s e e Hudek, P. de Boer, M., s e e Jansen, H. de Jager, P.W.H. and P. Kruit, Applicability of focused ion beams for nanotechnology de Koning, H., P. Zandbergen, M.J. Verheijen and U.K.P. Biermann, High aspect ratio resist structures by e-beam overexposure DellaGuardia, R., s e e Maldonado, J.R. Despont, M., s e e Stebler, C. Despont, M., U. Staufer, C. Stebler, R. Germann and P. Vettiger, Microfabrication of lenses for a miniaturized electron column Di Fabrizio, E., s e e Raptis, I. Dinnis, A.R., Voltage contrast maps using the time-dispersive electron spectrometer D6beli, M., s e e Vetterli, D. D61dissen, W., s e e Wengelink, J. Dreyer, K.F., s e e Tennant, D.M. Drumheller, J.P., s e e Tiberio, R.C. Dubonos, S.¥., B.N. Gaifullin, H.F. Raith, A.A. Svintsov and S.I. Zaitsev, Proximity correction for 3D structures Dutoit, M., s e e Gotza, M.
401-404 475-480 327-330
Ehbets, P., s e e Blattner, P. Ehrlich, Ch., s e e Fortagne, O. Eisele, I., s e e Gondermann, J. Eisenmann, H., s e e Waas, T. Elwenspoek, M., s e e Jansen, H. Endert, H., R. Pfitzel, M. Powell, U. Rebhan and D. Basting, New KrF and ArF excimer laser for advanced DUV lithography Engei, H., s e e Wengelink, J. Eriksson, N., s e e Hagberg, M. Everett, J., s e e Miller Tate, P.C.
543-546 151-154 83- 86 179-182 475-480
Fakkeldij, E.J.M., s e e van der Drift, E. Falcigno, P., s e e Nalamasu, O. Fallmann, W., s e e Br/inger, W.H. Fan, L.-S., s e e Reiley, T.C. Feder, K., s e e Tennant, D.M. Feiertag, G., M. Schmidt and A. Schmidt, Thermoelastic deformations of masks for deep X-ray lithography Finkelstein, W., s e e Brfinger, W.H. Fischer, D., s e e Yunkin, V.A. Forchel, A., s e e Orth, A. Forouhar, S., s e e Tiberio, R.C. Fortagne, O., P. Hahmann and Ch. Ehrlich, WePrint 200-The fast e-beam printer with high throughput Fortuin, A.W., M. van der Kolk, T. Zijlstra, A.H. Verbruggen and S. Radelaar, Fabrication of single-crystalline aluminum nanostructures Fresser, H.S., F.E. Prins and D.P. Kern, Metal-semiconductor-metal structures as electron detector for 1 kV microcolumns Fukuda, H., Y. Kobayashi, T. Tawa and S. Okazaki, Performance of pupil-filtering stepper-lens system
481-485 367-370 323-326 495-498 427-434
421-424 303-306 155-158 467-470 417-420 523-526 339-342 247-250 427-434 67- 70 195-198 129-132
221-224 247-250 435-438 409-412
513-516 323-326 463-466 343-346 67- 70 151-154 117-120 159-162 213-216
554
Author Index Volume 27
Fukuda, H. and T. Terasawa, Design and analysis of diffraction mirror optics for EUV projection lithography s e e Tsuyuzaki, H.
Fukuda, M.,
239-242 291-294
Gaifullin, B.N., s e e Dubonos, S.V. Gale, R.O., s e e Monk, D.W. Gamo, K., s e e Shimizu, T. Gao, W.X., s e e Lee, K.Y. Geerligs, L.J., s e e Lukey, P.W. Geiger, D., s e e Mittermeier, E. Geng, C., s e e Hommel, J. Gentili, M., s e e Raptis, I. Germann, R., s e e Despont, M. Gnall, R.P., s e e Tennant, D.M. Goethals, A.-M., s e e Van Driessche, V. Gogolides, E., D. Tzevelekis, K. Yannakopoulou and M. Hatzakis, A new method which increases the Si content in wet silylation, and its relation to the thermal effects during 0 2 plasma development Gogolides, E., S. Grigoropoulos and A.G. Nassiopoulos, Highly anisotropic roomtemperature sub-half-micron Si reactive ion etching using fluorine only containing gases Gondermann, J., B. Spangenberg, T. K6ster, B. Hadam, H.G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gol3ner and I. Eisele, Fabrication and characterization of Si/SiGe nanometer structures GoBner, H., s e e Gondermann, J. G6tz, F., s e e Brol3ardt, R. Gotza, M., B. Saint-Cricq, M. Dutoit and P.-H. Jouneau, Natural masking for producing sub-10-nm silicon nanowires Gratzke, U. and G. Simon, A new mechanism of nanostructure formation with the STM Gray, S., s e e Dfindliker, R. Grella, L., s e e Raptis, I. Grenon, B.J., H.C. Hamaker and P.D. Buck, A new mask lithography tool for advanced mask manufacturing Greschner, J., s e e Bartha, J.W. Grey, F., D.H. Huang and M. Aono, Tip displacement during STM pulse modification of silicon Grigoropoulos, S., s e e Gogolides, E. Gspann, J., Micromachining by accelerated nanoparticle erosion Gundlaeh, A.M., s e e Turcu, I.C.E. Gurin, V.S., s e e Ragoisha, G.A. Gurin, V.S. and M.V. Artemyev, Nanoscale modification of thin film surfaces by voltage pulses in STM Gyuro, I., s e e Orth, A.
195-198 489-493 121-124 79- 82 87- 90 75- 78 445-448 417-420 467-470 427-434 243-246
Haase, D., s e e Hommel, J. Hadam, B., s e e Gond'ermann, J. Haddeman, T.B.J., s e e van Helleputte, H.R.J.R.
445-448 83- 86 547-550
381-384
449-452
83- 86 83- 86 139-142 129-132 35- 38 205-211 417-420 225-230 453-456 17- 22 449-452 517-520 295-298 51- 54 109-112 343-346
Author Index Volume 27
555
Hagberg, M., N. Eriksson, T. Kjellberg and A. Larsson, Fabrication of gratings for integrated optoelectronics s e e Fortagne, O. Hamaker, H.C., s e e Grenon, B.J. Harada, K., s e e Ozaki, Y. Hartmann, H., s e e Waas, T. Hartnagel, H.L., s e e Urban, J. Hatzakis, M., s e e Gogolides, E. Henke, W., s e e B6rnig, K. Henke, W., W. Hoppe, H.J. Quenzer, P. Staudt-Fischbach and B. Wagner, Simulation assisted design of processes for gray-tone lithography Herzig, H.P., s e e D/indliker, R. Herzig, H.P., s e e Blattner, P.
Hahmann, P.,
Hesse, E.,
see
Bischoff, L.
Heuvelman, W.,
Maes, J.W.H. Wallraff, G. Hjort, K., s e e Urban, J. Hofmann, F., s e e R6sner, W. H6hing, B., s e e Hommel, J. Holzwarth, H., s e e Nalamasu, O. Hommel, J., B. H6hing, C. Geng, M. Kessler, D. Haase, F. Scholz and H. Schweizer, Electron cyclotron resonance (ECR) plasma-assisted bandgap engineering in GaInP/ A1GaInP Hoppe, W., s e e Henke, W. Horiuchi, T., s e e Ozaki, Y. Horn, J., s e e Urban, J. Hosaka, S., s e e Imura, R. Houle, F., s e e Wallraff, G. Huang, D.H., s e e Grey, F. Huang, W., s e e Sachdev, H. Hudek, P., s e e Dahm, G. Hudek, P., I.W. Rangelow, I.S. Daraktchiev and :I. Kosti6, On the application of chemically amplified positive resists to micromachining Hudek, P., s e e Rangelow, I.W. Huq, S.E., L. Chen and P.D. Prewett, Sub 10 nm silicon field emitters produced by electron beam lithography and isotropic plasma etching Hutchinson, J., s e e Wallraff, G.
Hinsberg, W.,
see
see
Imura, R., H. Koyanagi, M. Miyamoto, A. Kikukawa, T. Shintani and S. Hosaka, Demonstration of nanometer recording with a scanning probe microscope Inanaga, K., s e e Maruno, S. Irmseher, M., s e e Leuschner, R. Ishihara, S., s e e Tsuyuzaki, H. Ismail, K . , s e e Lee, K.Y. Isu, T., s e e Maruno, S. Ito, A. and T. Anbe, Low aberration in-lens analyzer for e-beam tester using collimation by both magnetic and electrostatic lenses
435-438 151-154 225-230 255-258 179-182 113-116 381-384 217-220 267-270 205-211 543-546 351-354 99-103 397-400 113-116 55- 58 445-448 367-370
445-448 267-270 255-258 113-116 105-108 397-400 17- 22 393-396 263-266 401-404 471-474 95- 98 397-400
105-108 39- 42 385-388 291-294 79- 82 39- 42 527-530
556
Author Index Volume 27
Ito, M., H. Oizumi, T. Soga, H. Yamanashi, T. Ogawa, S. Katagiri, E. Seya and E. Takeda, Soft X-ray projection imaging with multilayer reflection masks Iwadate, K., s e e Namatsu, H. Iwadate, K., s e e Kurihara, K.
285-290 71- 74 125-128
Jaekel, Ch.,
499-502 371-374
see
Barth, R.
Jagdhold, U., s e e Bauch, L. Jansen, H., M. de Boer, J. Burger, R. Legtenberg and M. Elwenspoek, The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches Jedrasik, P., Neural networks application for fast, direct correction kernel generation for proximity effects correction in Electron Beam Lithography Johnson, M.B., M. Pfister, S.F. Alvarado and H.W.M. Salemink, Atomic-scale analysis of quantum nanostructures with the STM Johnson, M.B., J.-P. Bourgoin and B. Michel, Doping profiling with scanning surface harmonic microscopy Johnson, S., s e e Zheng Cui Jonckheere, R., A. Tritchkov, V. Van Driessche and L. Van den hove, Electron beam/DUV intra-level mix-and-match lithography for random logic 0.25/zm CMOS Jonckheere, R., s e e Bracher, B.H. Jones, R.G., s e e Miller Tate, P.C. Jorritsma, J., s e e Kramer, N. Jos, H.F.F., s e e Webster, M.N. Jouneau, P.-H., s e e Gotza, M.
475-480 191-194 27- 30 539-542 259-262 231-234 531-534 409-412 47- 50 91- 94 129-132
Katagiri, S., s e e lto, M. Katnani, A., s e e Sachdev, H. Kern, D.P., s e e Fresser, H.S. Kessler, M., s e e Hommel, J. Kieslich, A., s e e Orth, A. Kiknkawa, A . , s e e Imura, R. Kitamura, T., High stability measurement in the sub-half micron region based on new
285-290 393-396 159-162 445-448 343-346 105-108
ESD technology Kjellberg, T., s e e Hagberg, M. Kley, E.-B., s e e Briinger, W. Knapek, E., s e e Stemmer, A. Knapek, E., s e e Zarschizky, H. Knnrek, C.S., s e e Novembre, A.E. Kobayashi, Y., s e e Fukuda, H. Koch, T.L., s e e Tennant, D.M. Koek, B., s e e Turcu, I.C.E. Kohn, E., s e e Mittermeier, E. Kometani, J.M., s e e Novembre, A.E. Koops, H.W.P., s e e Urban, J. Koops, H.W.P., s e e Dahm, G. Koren, U., s e e Tennant, D.M. Koster, N.B., s e e Louis, E. Kiister, T., s e e Gondermann, J.
535-538 435-438 135-138 171-174 175-178 389-392 213-216 427-434 295-298 75- 78 389-392 113-116 263-266 427-434 235-238 83- 86
Author
Index
Volume
27
557
Hudek, P. s e e Imura, R. Kramer, N., J. Jorritsma, H. Birk and C. Sch6nenberger, Nanometer lithography on silicon and hydrogenated amorphous silicon with low-energy electrons Kruit, P., s e e de Jager, P.W.H. Kumar, U., s e e Novembre, A.E. Kupka, R.K., Y. Chen, R. Planel and H. Launois, Fabrication of quantum wires and dots by X-ray lithography and Ga + implantation enhanced intermixing Kurihara, K., s e e Namatsu, H. Kurihara, K., K. Iwadate, H. Namatsu, M. Nagase and K. Murase, Electron beam nanolithography with image reversal by ECR plasma oxidation Kurz, H., s e e Gondermann, J. Kurz, It., s e e Barth, R. Kwong, R., s e e Sachdev, H.
401-404 105-108
Lake, P., s e e Turcu, I.C.E. Lang, R.J., s e e Tiberio, R.C. Langheinrich, W., The influence of the substrate on proximity effect and exposure dose for the inorganic resist LiF(AIF3) Larsson, A., s e e Hagberg, M.Launois, H., s e e Kupka, R.K. Lee, K.Y., K. Ismail, J.O. Chu, W.X. Gao and S. Washburn, Fabrication of AharonovBohm rings in Si/SiGe heterostructure Lefranc, G., s e e Stemmer, A. Lefranc, G., s e e Zarschizky, H. Legtenberg, R., s e e Jansen, H. Lercel, M.J., G.F. Redinbo, M. Rooks, R.C. Tiberio, H.G. Craighead, C.W. Sheen and D.L. Allara, Electron beam nanofabrication with self-assembled monolayers of alkylthiols and alkylsiloxanes Leuschner, R., E. Schmidt, H. Ohlmeyer, R. Sezi and M. Irmscher, Bilayer resist based on wet silylation (CARL process) for e-beam lithography Lin, Y.-C., s e e Loong, W.-A. L6chei, B., s e e Webster, M.N. L6chel, B., s e e Maciossek, A. Loong, W.-A., S.-L. Shy and Y.-C. Lin, 0.35/zm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigma L6schner, H., s e e Br/inger, W.H. Louis, E., H.-J. Voorma, N.B. Koster, F. Bijkerk, Yu.Ya. Platonov, S.Yu. Zuev, S.S. Andreev, E.A. Shamov and N.N. Salashchenko, Multilayer coated reflective optics for extreme UV lithography Lnkey, P.W., J. Caro, L.J. Geerligs, K. Werner and S. Radelaar, Fabrication of submicron Si/SiGe double barrier resonant tunneling structures Lyding, J.W., s e e Abeln, G.C.
295-298 67- 70
McKinnon, A.W.,
113-116
Kosti~, I.,
see
Koyanagi, tt.,
s e e Urban, J. Maciossek, A., B. L6chel, H.-J. Quenzer, B. Wagner, S. Schulze and J. Noetzel, Galvanoplating and sacrificial layers for surface micromachining
47- 50 327-330 389-392 311-316 71- 74 125-128 83- 86 499-502 393-396
199-202 435-438 311-316 79- 82 171-174 175-178 475-480
43- 46 385-388 275-278 91- 94 503-508 275-278 323-326
235-238 87- 90 23- 26
503-508
558
Author Index Volume 27
Maes, J.W.H., W. Heuvelman, J. Caro, K. Werner, H.W. Zandbergen and S. Radelaar, Nanofabrication of Si point contacts using gas-source MBE: towards single-crystalline devices Maggiora, R., s e e Raptis, I. Maldonado, J.R., R. DellaGuardia and E. Babich, Determination of helium presence in the mask/wafer gap of X-ray lithography steppers Mamin, H.J., s e e Reiley, T.C. Maquin, P., s e e Bartha, J.W. 271-274, Martin, B., s e e Arthur, G. Martin, B., s e e Zheng Cui Martin, R.D., s e e Tiberio, R.C. Maruno, S., K. Inanaga and T. Isu, Nanoscale manipulation of C60 with a scanning tunneling microscope Mastrogiacomo, L . , s e e Raptis, I. Mayerhofer, F., s e e Stemmer, A. Melngailis, J., s e e Br/inger, W.H. Messina, G., A. Paoletti, S. Santangelo and A. Tucciarone, A single quality factor for electron backscattering from thin films Michel, B., s e e Johnson, M.B. Miller, B.I., s e e Tennant, D.M. Miller Tate, P.C., R.G. Jones, J. Murphy and J. Everett, Simple model of the lithographic response of "Hatzakis" chemicaUy-amplified resists Mitchell, P., s e e Turcu, I.C.E. Mittermeier, E., D. Geiger, S. Str/ihle and E. Kohn, Fabrication of dual-gate FET structures with short gate length and nm spacing Mixon, D.A., s e e Novembre, A.E. Miyamoto, M., s e e Imura, R. Monk, D.W. and R.O. Gale, The digital micromirror device for projection display Moors, P.M.A., s e e Webster, M.N. Miihle, R., s e e Vetterli, D. Miiller, J., s e e Orth, A. Miiller, K.P., K. Roithner and H.-J. Timme, Selectivity and Si-load in deep trench etching Miinzel, N., s e e Nalamasu, O. Miinzel, N., s e e Novembre, A.E. Murad, S.K., P.D. Wang, N.I. Cameron, S.P. Beaumont and C.D.W. Wilkinson, Damage free and selective RIE of GaAs/A1GaAs in SiCl 4/SiF 4 plasma for MESFET and pseudomorphic HEMT's gate recess etching Murakami, K., s e e Oizumi, H. Murase, K., s e e Namatsu, H. Murase, K., s e e Kurihara, K. Murphy, J., s e e Miller Tate, P.C. Musil, C., s e e Patterson, B.D. Musil, C.R., s e e Vetterli, D. Nagase, M., s e e Namatsu, H. Nagase, M., s e e Kurihara, K. Nagata, H., s e e Oizumi, H.
99-103 417-420 303-306 495-498 453-456 279-282 331-334 67- 70 39- 42 417-420 171-174 323-326 183-186 539-542 427-434 409-412 295-298 75- 78 389-392 105-108 489-493 91- 94 339-342 343-346 457-462 367-370 389-392 439-444 317-320 71- 74 125-128 409-412 347-350 339-342 71- 74 125-128 317-320
Author Index Volume 27
Nalamasu, O., E. Reichmanis, A.G. Timko, R. Tarascon, A.E. Novembre, S. Slater, H. Holzwarth, P. Falcigno and N. Miinzel, A unified approach to resist materials design for the advanced lithographic technologies Nalamasu, O., s e e Novembre, A.E. Namatsu, H., M. Nagase, K. Kurihara, K. Iwadate and K. Murase, 10-nm silicon lines fabricated in (110) silicon Namatsu, H., s e e Kurihara, K. Naqvi, S.S.H., s e e Blattner, P. Nassiopoulos, A.G., s e e Gogolides, E. Nebiker, P.W., s e e Vetterli, D. Neenan, T.X., s e e Novembre, A.E. Noetzel, J., s e e Maciossek, A. Norton, K., s e e Prior, R. Novembre, A.E., s e e Nalamasu, O. Novembre, A.E., J.M. Kometani, C.S. Knurek, U. Kumar, T.X. Neenan, D.A. Mixon, O. Nalamasu and N. Miinzel, Identification of sensitive positive and negative working resist materials for proximity X-ray lithography
Ogawa, T., s e e Ito, M. Ohlmeyer, H., s e e Leuschner, R. Ohtani, M., s e e Oizumi, H. Oizumi, H., s e e Ito, M. Oizumi, H., M. Ohtani, Y. Yamashita, K. Murakami, H. Nagata and N. Atoda, Resist performance in 5 nm and 13 nm soft X-ray projection lithography Okazaki, S., s e e Fukuda, H. Op de Beeck, M., s e e Van Driessche, V. Orth, A., J.P. Reithmaier, J. Miiller, A. Kieslich, A. Forchel, J. Weber, I. Gyuro and E. Zielinski, Gain-modulated second order distributed feedback gratings fabricated by maskless focused ion beam implantation in GalnAsP heterostructures Ozaki, Y., T. Horiuchi and K. Harada, Point and 2-dimensional measurement of phase shifting masks Pagnia, H., s e e Urban, J. Paneva, R., G. Temmel, E. Burte and H. Ryssel, Nitrogen implanted etch-stop layers in silicon Paniez, P.J., s e e Schiltz, A. Paoletti, A., s e e Messina, G. Patterson, B.D., C. Musil, H. Siegwart and A. Vonlanthen, Focused-ion beam modification of waveguide photonic devices P~itzel, R., s e e Endert, H. Peckerar, M.C., s e e Burkhardt, M. P~rez-Murano, F., s e e Barniol, N. Pfeiffer, H.C. and W. Stickel, PREVAIL-An e-beam stepper with variable axis immersion lenses Pfister, M., s e e Johnson, M.B. Planel, R., s e e Kupka, R.K. Platonov, Yu.Ya., s e e Louis, E. Plontke, R., s e e Briinger, W.
559
367-370 389-392 71- 74 125-128 543-546 449-452 339-342 389-392 503-508 147-150 367-370
389-392 285-290 385-388 317-320 285-290 317-320 213-216 243-246
343-346 255-258 113-116 509-512 413-416 183-186 347-350 221-224 307-310 31- 34 143-146 27- 30 311-316 235-238 135-138
560
Author Index Volume 27
Pol, V., s e e Yuan, C.-M. Powell, M., s e e Endert, H. Prewett, P., s e e Turcu, I.C.E. Prewett, P.D., s e e Huq, S.E. Prewett, P.D., s e e Zheng Cui 259-262, Prins, F.E., s e e Fresser, H.S. Prior, R., A. Benveniste and K. Norton, MEBES ® 4500 raster scan techniques: calibration and control Prongu6, D., H. Rothuizen, F. Vasey and P. Vettiger, Enhanced e-beam system for the fabrication of optical elements Prusseit, W., s e e Barth, R. Puech, M., s e e Bartha, J.W. Puyenbroek, R., s e e Rousseeuw, B.A.C.
251-253 221-224 295-298 95- 98 331-334 159-162 147-150 163-166 499-502 453-456 375-379
Quenzer, H.-J., s e e Maciossek, A. Quenzer, H.J., s e e Henke, W.
503-508 267-270
Radelaar, S., Radelaar, S., Radelaar, S., Radelaar, S . , Radelaar, S . ,
87- 90 91- 94 99-103 117-120 481-485
Lukey, P.W. Webster, M.N. s e e Maes, J.W.H. s e e Fortuin, A.W. s e e van der Drift, E. Ragoisha, G.A., V.S. Gurin and A.L. Rogach, Nanostructures self-assembling from nonequilibrium silver nanophase on conducting nonmetallic substrates Raith, H.F., s e e Dubonos, S.V. Rangelow, I.W., s e e Dahm, G. Rangelow, I.W., s e e Hudek, P. Rangelow, I.W. and P. Hudek, MEMS fabrication by lithography and reactive ion etching (LIRIE) Rapp, B., s e e BroBardt, R. Raptis, I., M. Gentili, E. Di Fabrizio, R. Maggiora, M. Baciocchi, L. Grella and L. Mastrogiacomo, Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 /~m Rebhan, U., s e e Endert, H. Redinbo, G.F., s e e Lercel, M.J. Reeves, C.M., s e e Turcu, I.C.E. Reichmanis, E., s e e Nalamasu, O. Reiley, T.C., L.-S. Fan and H.J. Mamin, Micromechanical structures for data storage Reithmaier, J.P., s e e Orth, A. Rhee, K.W., s e e Burkhardt, M. Risch, L., s e e R6sner, W. Rogach, A.L., s e e Ragoisha, G.A. Rohrer, H., The nanometer age: challenge and chance Roithner, K., s e e M/iller, K.P. Romijn, J., s e e Webster, M.N. Ronse, K., s e e Van Driessche, V. Ronse, K., s e e Van den hove, L. Rooks, M., s e e Lercel, M.J. see see
51- 54 195-198 263-266 401-404 471-474 139-142
417-420 221-224 43- 46 295-298 367-370 495-498 343-346 307-310 55- 58 51- 54 3- 15 457-462 91- 94 243-246 357-365 43- 46
Author
Index
Volume
27
Roskos, H.G., s e e Gondermann, J. R6sner, W., F. Hofmann, T. Vogelsang and L. Risch, Simulation of single electron circuits Ross, A.W.S., s e e Turcu, I.C.E. Rothuizen, H., s e e Prongu6, D. Rousseeuw, B.A.C., R. Puyenbroek, E. van der Drift and J.C. van de Grampel, Silicon containing resists with positive and negative tone Ryssel, H., s e e Paneva, R. Sachdev, H., R. Kwong, W. Huang, A. Katnani and K. Sachdev, New negative tone resists for sub-quarter micron lithography Sachdev, K., s e e Sachdev, H. Saint-Crieq, B., s e e Gotza, M. Salashchenko, N.N., s e e Louis, E. Salemink, H.W.M., s e e Johnson, M.B. Santangelo, S., s e e Messina, G. Schiltz, A. and P.J. Paniez, In-situ determination of photoresist glass transition temperature by wafer curvature measurement techniques Schittenhelm, P., s e e Gondermann, J. Schmidt, A., s e e Feiertag, G. Schmidt, E., s e e Leuschner, R. Schmidt, M., s e e Feiertag, G. Schnabel, B., s e e Brtinger, W. Scholz, F., s e e Hommel, J. Sch6nenberger, C., s e e Kramer, N. Schulze, S., s e e Maciossek, A. Schwalm, R., s e e Weil3, M. Schweizer, H., s e e Hommel, J. Seidel, P., s e e Wallraff, G. Seya, E., s e e Ito, M. Sezi, R., s e e Leuschner, R. Shamov, E.A., s e e Louis, E. Sheen, C.W., s e e Lercel, M.J. Shen, T.-C., s e e Abeln, G.C. Shevelko, A.P., s e e Bijkerk, F. Shibayama, A., s e e Tsuyuzaki, H. Shimizu, T., Y. Yasuoka and K. Gamo, Fabrication of the edge type thin-film warm carrier devices Shintani, T., s e e Imura, R. Shmaenok, L.A., s e e Bijkerk, F. Shy, S.-L., s e e Loong, W.-A. Siegwart, H., s e e Patterson, B.D. Siewert, J., s e e Barth, R. Silverman, S., s e e Burkhardt, M. Simon, G., s e e Gratzke, U. Slater, S., s e e Nalamasu, O. Smith, ILl., s e e Burkhardt, M. Soga, T., s e e Ito, M.
561 83- 86 55- 58 295-298 163-166 375-379 509-512
393-396 393-396 129-132 235-238 27- 30 183-186 413-416 83- 86 513-516 385-388 513-516 135-138 445-448 47- 50 503-508 405-408 445-448 397-400 285-290 385-388 235-238 43- 46 23- 26 299-301 291-294 121-124 105-108 299-301 275-278 347-350 499-502 307-310 35- 38 367-370 307-310 285-290
562
Author Index Volume 27
Spangenberg, B., s e e Gondermann, J. Spangenberg, B., s e e Barth, R. Staudt-Fischbach, P., s e e Henke, W. Staufer, U., s e e Stebler, C. Staufer, U., s e e Despont, M. Stebler, C., M. Despont and U. Staufer, Miniaturized e-beam writer: testing of components Stebler, C., s e e Despont, M. Stemmer, A., H. Zarschizky, E. Knapek, G. Lefranc and F. Mayerhofer, Efficiency enhancement of diffractive optical elements by variable relief profiling Stemmer, A., s e e Zarschizky, H. Stengl, G., s e e Briinger, W.H. Stevenson, J.T.M., s e e Turcu, I.C.E. Stickel, W., s e e Pfeiffer, H.C. Stolberg, I., s e e Briinger, W. Str/ihle, S., s e e Mittermeier, E. Suzuki, M., s e e Tsuyuzaki, H. Svintsov, A.A. and S.I. Zaitsev, Simulation of heating in powerful electron lithography Svintsov, A.A., s e e Dubonos, S.V.
83- 86 499-502 267-270 155-158 467-470
Takeda, E., s e e Ito, M. Tarascon, R., s e e Nalamasu, O. Tawa, T., s e e Fukuda, H. Teichert, J., s e e Bischoff, L. Temmel, G., s e e Paneva, R. Tennant, D.M., K. Feder, K.F. Dreyer, R.P. Gnall, T.L. Koch, U. Koren, B.I. Miller and M.G. Young, Phase grating masks for photonic integrated circuits fabricated by e-beam writing and dry etching: challenges to commercial applications Terasawa, T., s e e Fukuda, H. Tiberio, R.C., s e e Lercel, M.J. Tiberio, R.C., P.F. Chapman, J.P. Drumheller, R.D. Martin, S. Forouhar and R.J. Lang, Laterally-coupled distributed feedback laser fabricated with electron beam lithography and chemically assisted ion beam etching Timko, A.G., s e e Nalamasu, O. Timme, H.-J., s e e Miiller, K.P. Tomnikov, A., s e e Babin, S. Tritchkov, A., s e e Jonckheere, R. Tsuyuzaki, H., M. Fukuda, M. Suzuki, A. Shibayama and S. Ishihara, Compatibility between two SR steppers Tucciarone, A., s e e Messina, G. Tucker, J.R., s e e Abeln, G.C. Tuinhout, A., s e e Webster, M.N. Turcu, I.C.E., C.M. Reeves, J.T.M. Stevenson, A.W.S. Ross, A.M. Gundlach, P. Prewett, P. Anastasi, B. Koek, P. Mitchell and E Lake, 180nm X-ray lithography with a high repetition rate laser-plasma source Tzevelekis, D., s e e Gogolides, E.
285-290 367-370 213-216 351-354 509-512
155-158 467-470 171-174 175-178 323-326 295-298 143-146 135-138 75- 78 291-294 187-190 195-198
427-434 239-242 43- 46 67- 70 367-370 457-462 167-170 231-234 291-294 183-186 23- 26 91- 94 295-298 381-384
Author
Index
Volume
27
Urban, J., S. Br~iuer, A.W. McKinnon, J. Horn, K. Hjort, H. Pagnia, H.W.P. Koops and H.L. Hartnagel, The scanning tunneling microscope as a tool for nanolithography: writing nanostructures on Si (110) in air Utz, B., s e e Barth, R. Van Driessche, ¥., s e e Jonckheere, R. Van Driessche, V., A.-M. Goethals, M. Op de Beeck, K. Ronse and L. Van den hove, DUV lithography for 0.35 ~m CMOS processing van de Grampel, J.C., s e e Rousseeuw, B.A.C. Van den hove, L., s e e Jonckheere, R. Van den hove, L., s e e Van Driessche, V. Van den hove, L. and K. Ronse, Challenges for 0.35-0.25/~m optical lithography van tier Drift, E., s e e Rousseeuw, B.A.C. van tier Drift, E., T. Zijlstra, E.J.M. Fakkeldij, R. Cheung, K. Werner and S. Radelaar, XPS study on dry etching of Si/GexSil_ x van tier Kolk, M., s e e Fortuin, A.W. van Helleputte, H.R.J.R., T.B.J. Haddeman, M.J. Verheijen and J.-J. Baalbergen, Comparative study of 3D measurement techniques (SPM, SEM, TEM) for submicron structures van Honk, A.G.J.R., s e e Bijkerk, F. Vasey, F., s e e Prongu6, D. Verbruggen, A.H., s e e Webster, M.N. Verbruggen, A.H., s e e Fortuin, A.W. Verheijen, M.J., s e e de Koning, H. Verheijen, M.J., s e e van Helleputte, H.R.J.R. Vetterli, D., M. D6beli, R. Miihle, P.W. Nebiker and C.R. Musil, Characterization of focused ion beam induced damage Vettiger, P., s e e Prongu6, D. Vettiger, P., s e e Despont, M. Vogelsang, T., s e e R6sner, W. Voges, E., s e e Yunkin, V.A. V61kei, R., s e e Dfindliker, R. V611inger, O., s e e Waas, T. Vonlanthen, A., s e e Patterson, B.D. Voorma, H.-J., s e e Louis, E. Waas, T., H. Eisenmann, O. V611inger and H. Hartmann, Proximity correction for high CD accuracy and process tolerance Wagner, B., s e e Henke, W. Wagner, B., s e e Maciossek, A. Wallraff, G., J. Hutchinson, W. Hinsberg, F. Houle and P. Seidel, Kinetics of thermal and acid-catalyzed deprotection in deep-UV resist materials Wang, P.D., s e e Murad, S.K. Washburn, S., s e e Lee, K.Y. Watson, J., s e e Zheng Cui Weber, J., s e e Orth, A.
563
113-116 499-502
231-234 243-246 375-379 231-234 243-246 357-365 375-379 481-485 117-120
547-550 299-301 163-166 91- 94 117-120 421-424 547-550 339-342 163-166 467-470 55- 58 463-466 205-211 179-182 347-350 235-238 179-182 267-270 503-508 397-400 439-444 79- 82 331-334 343-346
564
Author Index Volume 27
Webster, M.N., A. Tuinhout, A.H. Verbruggen, J. Romijn, S. Radelaar, B. L6chel, H.F.F. Jos and P.M.A. Moors, Fabrication of 100 nm polysilicon-emitter transistors using e-beam lithography WeiB, M., H. Binder and R. Schwalm, Modeling and simulation of a chemically amplified DUV resist using the effective acid concept Wengelink, J., H. Engel and W. D61dissen, Semitransparent mask technique for relief type surface topographies Werner, K., s e e Lukey, P.W. Werner, K., s e e Maes, J.W.H. Werner, K., s e e van der Drift, E. Wilkinson, C.D.W., Nanostructures in biology Wilkinson, C.D.W., s e e Murad, S.K. Wolf, H., s e e Barth, R.
Yamanashi, H., s e e Ito, M. Yamashita, Y., s e e Oizumi, H. Yannakopoulou, K., s e e Gogolides, E. Yasuoka, Y., s e e Shimizu, T. Ye, J.H., s e e Barniol, N. Young, M.G., s e e Tennant, D.M. Yuan, C.-M. and V. Pol, Comparisons of attenuated PSM technologies using etched quartz and embedded materials Yunkin, V.A., D. Fischer and E. Voges, Reactive ion etching of silicon submicron-sized trenches in SF6/CzCI3F3 plasma Zaitsev, S.I., Zaitsev, S.I.,
Svintsov, A.A. Dubonos, S.V. Zandbergen, H.W., s e e Maes, J.W.H. Zandbergen, P., s e e de Koning, H. Zarschizky, H., s e e Stemmer, A. Zarschizky, H., A. Stemmer, E. Knapek and G. Lefranc, Design, CAD-data generation and fabrication of diffractive lenses with submicron feature sizes Zheng Cui, P.D. Prewett and S. Johnson, Transmission and side-lobe effect in attenuated phase shift masks Zheng Cui, P.D. Prewett, J. Watson and B. Martin, FIB repair of defects in rim and attenuated phase shift masks Zielinski, E., s e e Orth, A. Zierbock, M., s e e Brtinger, W. Zijlstra, T., s e e Fortuin, A.W. Zijlstra, T., s e e van der Drift, E. Zuev, S.Yu., s e e Louis, E. see
see
91- 94 405-408 247-250 87- 90 99-103 481-485 61- 65 439-444 499-502 285-290 317-320 381-384 121-124 31- 34 427-434 251-253 463-466 187-190 195-198 99-103 421-424 171-174 175-178 259-262 331-334 343-346 135-138 117-120 481-485 235-238
Microelectronic Engineering 27 (1995) 551-564
Author Index Volume 27 Abadal, G., s e e Barniol, N. Abeln, G.C., T.-C. Shen, J.R. Tucker and J.W. Lyding, Nanoscale STM-patterning and chemical modification of the Si(100) surface Abstreiter, G., s e e Gondermann, J. Allara, D.L., s e e Lercel, M.J. Alvarado, S.F., s e e Johnson, M.B. Anastasi, P., s e e Turcu, I.C.E. Anbe, T., s e e Ito, A. Andreev, S.S., s e e Louis, E. Antoniadis, D.A., s e e Burkhardt, M. Aono, M., s e e Grey, F. Artemyev, M.V., s e e Gurin, V.S. Arthur, G. and B. Martin, The effect of defocus on the printability of sub-micron 5X reticle defects Arthur, G. and B. Martin, Sub-half-micron contact hole definition by I-line optical lithography Atoda, N., s e e Oizumi, H. Aymerich, X., s e e Barniol, N.
Baaibergen, J.-J., s e e van Helleputte, H.R.J.R. Babich, E., s e e Maldonado, J.R. Babin, S. and A. Tomnikov, Artificial refractive index gratings manufacturing using electron beam lithography Baciocchi, M., s e e Raptis, I. Barniol, N., F. P6rez-Murano, G. Abadal, J.H. Ye and X. Aymerich, Field induced nanomodification on silicon (100) with scanning tunneling microscopy Barth, R., J. Siewert, B. Spangenberg, Ch. Jaekel, H. Kurz, B. Utz, W. Prusseit and H. Wolf, High-Tc air-bridge microbolometers fabricated by silicon micromachining technique Bartha, J.W., J. Greschner, M. Puech and P. Maquin, Low temperature etching of Si in high density plasma using SF6/O 2 Bastiaensen, R.K.F.J., s e e Bijkerk, F. Basting, D., s e e Endert, H. Bauch, L., M. B6ttcher and U. Jagdhold, Resist process to join electron beam lithography and photolithography Beaumont, S.P., s e e Murad, S.K. Benveniste, A., s e e Prior, R. Biermann, U.K.P., s e e de Koning, H. Bijkerk, F., s e e Louis, E.
31- 34 23- 26 83- 86 43- 46 27- 30 295-298 527-530 235-238 307-310 17- 22 109-112 271-274 279-282 317-320 31- 34 547-550 303-306 167-170 417-420 31- 34
499-502 453-456 299-301 221-224 371-374 439-444 147-150 421-424 235-238
552
Author
Index Volume 27
Bijkerk, F., L.A. Shmaenok, A.P. Shevelko, R.K.F.J. Bastiaensen, C. Bruineman and A.G.J.R. van Honk, A high-power, low-contamination laser plasma source for extreme UV lithography Binder, H., s e e Weil3, M. Birk, H., s e e Kramer, N. Bischoff, L., J. Teichert and E. Hesse, Interconnection lines following the surface topography fabricated by writing focused ion beam implantation Biattner, P., S.S.H. Naqvi, P. Ehbets and H.P. Herzig, Diffractive structures for testing nano-meter technology B6rnig, K. and W. Henke, The impact of polarized illumination on imaging characteristics in optical microlithography B6ttcher, M., s e e Bauch, L. Bourgoin, J.-P., s e e Johnson, M.B. Bracher, B.H. and R. Jonckheere, Profile analysis and the isofocal threshold in SEM metrology Br/iuer, S., s e e Urban, J. Brogardt, R., F. G6tz and B. Rapp, 100 keV electron beam lithography process for high aspect ratio submicron structures Bruinemau, C., s e e Bijkerk, F. Briinger, W., E.-B. Kley, B. Schnabel, I. Stolberg, M. Zierbock and R. Plontke, Low energy lithography; energy control and variable energy exposure Briinger, W.H., H. L6schner, G. Stengl, W. Fallmann, W. Finkelstein and J. Melngailis, Evaluation of critical design parameters of an ion projector for 1 Gbit DRAM production Brunner, J., s e e Gondermann, J. Buchmann, L.-M., Multi-level-patterning using ion species of different penetration depth Buck, P.D., s e e Grenon, B.J. Burger, J., s e e Jansen, H. Burkhardt, M., S. Silverman, H.I. Smith, D.A. Antoniadis, K.W. Rhee and M.C. Peckerar, Gap control in the fabrication of quantum-effect devices using X-ray nanolithography Butte, E., s e e Paneva, R.
Cameron, N.I.,
s e e Murad, S.K. Lukey, P.W. s e e Maes, J.W.H. Chapman, P.F., s e e Tiberio, R.C. Chen, L., s e e Huq, S.E. Chen, Y., s e e Kupka, R.K. Cheung, R., s e e van der Drift, E. Chu, J.O., s e e Lee, K.Y. Ciube, F., s e e Dfindliker, R. Craighead, H.G., s e e Lercel, M.J.
Caro, J., Caro, J.,
see
299-301 405-408 47- 50 351-354 543-546 217-220 371-374 539-542 531-534 113-116 139-142 299-301 135-138
323-326 83- 86 335-338 225-230 475-480
307-310 509-512 439-444 87- 90 99-103 67- 70 95- 98 311-316 481-485 79- 82 205-211 43- 46
Dahm, G., I.W. Rangelow, P. Hudek and H.W.P. Koops, Quartz etching for phase shifting masks D~indliker, R., S. Gray, F. Clube, H.P. Herzig and R. V61kel, Non-conventional techniques for optical lithography
263-266 205-211
Author
Index
Volume
27
553
Daraktchiev, I.S., s e e Hudek, P. de Boer, M., s e e Jansen, H. de Jager, P.W.H. and P. Kruit, Applicability of focused ion beams for nanotechnology de Koning, H., P. Zandbergen, M.J. Verheijen and U.K.P. Biermann, High aspect ratio resist structures by e-beam overexposure DellaGuardia, R., s e e Maldonado, J.R. Despont, M., s e e Stebler, C. Despont, M., U. Staufer, C. Stebler, R. Germann and P. Vettiger, Microfabrication of lenses for a miniaturized electron column Di Fabrizio, E., s e e Raptis, I. Dinnis, A.R., Voltage contrast maps using the time-dispersive electron spectrometer D6beli, M., s e e Vetterli, D. D61dissen, W., s e e Wengelink, J. Dreyer, K.F., s e e Tennant, D.M. Drumheller, J.P., s e e Tiberio, R.C. Dubonos, S.¥., B.N. Gaifullin, H.F. Raith, A.A. Svintsov and S.I. Zaitsev, Proximity correction for 3D structures Dutoit, M., s e e Gotza, M.
401-404 475-480 327-330
Ehbets, P., s e e Blattner, P. Ehrlich, Ch., s e e Fortagne, O. Eisele, I., s e e Gondermann, J. Eisenmann, H., s e e Waas, T. Elwenspoek, M., s e e Jansen, H. Endert, H., R. Pfitzel, M. Powell, U. Rebhan and D. Basting, New KrF and ArF excimer laser for advanced DUV lithography Engei, H., s e e Wengelink, J. Eriksson, N., s e e Hagberg, M. Everett, J., s e e Miller Tate, P.C.
543-546 151-154 83- 86 179-182 475-480
Fakkeldij, E.J.M., s e e van der Drift, E. Falcigno, P., s e e Nalamasu, O. Fallmann, W., s e e Br/inger, W.H. Fan, L.-S., s e e Reiley, T.C. Feder, K., s e e Tennant, D.M. Feiertag, G., M. Schmidt and A. Schmidt, Thermoelastic deformations of masks for deep X-ray lithography Finkelstein, W., s e e Brfinger, W.H. Fischer, D., s e e Yunkin, V.A. Forchel, A., s e e Orth, A. Forouhar, S., s e e Tiberio, R.C. Fortagne, O., P. Hahmann and Ch. Ehrlich, WePrint 200-The fast e-beam printer with high throughput Fortuin, A.W., M. van der Kolk, T. Zijlstra, A.H. Verbruggen and S. Radelaar, Fabrication of single-crystalline aluminum nanostructures Fresser, H.S., F.E. Prins and D.P. Kern, Metal-semiconductor-metal structures as electron detector for 1 kV microcolumns Fukuda, H., Y. Kobayashi, T. Tawa and S. Okazaki, Performance of pupil-filtering stepper-lens system
481-485 367-370 323-326 495-498 427-434
421-424 303-306 155-158 467-470 417-420 523-526 339-342 247-250 427-434 67- 70 195-198 129-132
221-224 247-250 435-438 409-412
513-516 323-326 463-466 343-346 67- 70 151-154 117-120 159-162 213-216
554
Author Index Volume 27
Fukuda, H. and T. Terasawa, Design and analysis of diffraction mirror optics for EUV projection lithography s e e Tsuyuzaki, H.
Fukuda, M.,
239-242 291-294
Gaifullin, B.N., s e e Dubonos, S.V. Gale, R.O., s e e Monk, D.W. Gamo, K., s e e Shimizu, T. Gao, W.X., s e e Lee, K.Y. Geerligs, L.J., s e e Lukey, P.W. Geiger, D., s e e Mittermeier, E. Geng, C., s e e Hommel, J. Gentili, M., s e e Raptis, I. Germann, R., s e e Despont, M. Gnall, R.P., s e e Tennant, D.M. Goethals, A.-M., s e e Van Driessche, V. Gogolides, E., D. Tzevelekis, K. Yannakopoulou and M. Hatzakis, A new method which increases the Si content in wet silylation, and its relation to the thermal effects during 0 2 plasma development Gogolides, E., S. Grigoropoulos and A.G. Nassiopoulos, Highly anisotropic roomtemperature sub-half-micron Si reactive ion etching using fluorine only containing gases Gondermann, J., B. Spangenberg, T. K6ster, B. Hadam, H.G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gol3ner and I. Eisele, Fabrication and characterization of Si/SiGe nanometer structures GoBner, H., s e e Gondermann, J. G6tz, F., s e e Brol3ardt, R. Gotza, M., B. Saint-Cricq, M. Dutoit and P.-H. Jouneau, Natural masking for producing sub-10-nm silicon nanowires Gratzke, U. and G. Simon, A new mechanism of nanostructure formation with the STM Gray, S., s e e Dfindliker, R. Grella, L., s e e Raptis, I. Grenon, B.J., H.C. Hamaker and P.D. Buck, A new mask lithography tool for advanced mask manufacturing Greschner, J., s e e Bartha, J.W. Grey, F., D.H. Huang and M. Aono, Tip displacement during STM pulse modification of silicon Grigoropoulos, S., s e e Gogolides, E. Gspann, J., Micromachining by accelerated nanoparticle erosion Gundlaeh, A.M., s e e Turcu, I.C.E. Gurin, V.S., s e e Ragoisha, G.A. Gurin, V.S. and M.V. Artemyev, Nanoscale modification of thin film surfaces by voltage pulses in STM Gyuro, I., s e e Orth, A.
195-198 489-493 121-124 79- 82 87- 90 75- 78 445-448 417-420 467-470 427-434 243-246
Haase, D., s e e Hommel, J. Hadam, B., s e e Gond'ermann, J. Haddeman, T.B.J., s e e van Helleputte, H.R.J.R.
445-448 83- 86 547-550
381-384
449-452
83- 86 83- 86 139-142 129-132 35- 38 205-211 417-420 225-230 453-456 17- 22 449-452 517-520 295-298 51- 54 109-112 343-346
Author Index Volume 27
555
Hagberg, M., N. Eriksson, T. Kjellberg and A. Larsson, Fabrication of gratings for integrated optoelectronics s e e Fortagne, O. Hamaker, H.C., s e e Grenon, B.J. Harada, K., s e e Ozaki, Y. Hartmann, H., s e e Waas, T. Hartnagel, H.L., s e e Urban, J. Hatzakis, M., s e e Gogolides, E. Henke, W., s e e B6rnig, K. Henke, W., W. Hoppe, H.J. Quenzer, P. Staudt-Fischbach and B. Wagner, Simulation assisted design of processes for gray-tone lithography Herzig, H.P., s e e D/indliker, R. Herzig, H.P., s e e Blattner, P.
Hahmann, P.,
Hesse, E.,
see
Bischoff, L.
Heuvelman, W.,
Maes, J.W.H. Wallraff, G. Hjort, K., s e e Urban, J. Hofmann, F., s e e R6sner, W. H6hing, B., s e e Hommel, J. Holzwarth, H., s e e Nalamasu, O. Hommel, J., B. H6hing, C. Geng, M. Kessler, D. Haase, F. Scholz and H. Schweizer, Electron cyclotron resonance (ECR) plasma-assisted bandgap engineering in GaInP/ A1GaInP Hoppe, W., s e e Henke, W. Horiuchi, T., s e e Ozaki, Y. Horn, J., s e e Urban, J. Hosaka, S., s e e Imura, R. Houle, F., s e e Wallraff, G. Huang, D.H., s e e Grey, F. Huang, W., s e e Sachdev, H. Hudek, P., s e e Dahm, G. Hudek, P., I.W. Rangelow, I.S. Daraktchiev and :I. Kosti6, On the application of chemically amplified positive resists to micromachining Hudek, P., s e e Rangelow, I.W. Huq, S.E., L. Chen and P.D. Prewett, Sub 10 nm silicon field emitters produced by electron beam lithography and isotropic plasma etching Hutchinson, J., s e e Wallraff, G.
Hinsberg, W.,
see
see
Imura, R., H. Koyanagi, M. Miyamoto, A. Kikukawa, T. Shintani and S. Hosaka, Demonstration of nanometer recording with a scanning probe microscope Inanaga, K., s e e Maruno, S. Irmseher, M., s e e Leuschner, R. Ishihara, S., s e e Tsuyuzaki, H. Ismail, K . , s e e Lee, K.Y. Isu, T., s e e Maruno, S. Ito, A. and T. Anbe, Low aberration in-lens analyzer for e-beam tester using collimation by both magnetic and electrostatic lenses
435-438 151-154 225-230 255-258 179-182 113-116 381-384 217-220 267-270 205-211 543-546 351-354 99-103 397-400 113-116 55- 58 445-448 367-370
445-448 267-270 255-258 113-116 105-108 397-400 17- 22 393-396 263-266 401-404 471-474 95- 98 397-400
105-108 39- 42 385-388 291-294 79- 82 39- 42 527-530
556
Author Index Volume 27
Ito, M., H. Oizumi, T. Soga, H. Yamanashi, T. Ogawa, S. Katagiri, E. Seya and E. Takeda, Soft X-ray projection imaging with multilayer reflection masks Iwadate, K., s e e Namatsu, H. Iwadate, K., s e e Kurihara, K.
285-290 71- 74 125-128
Jaekel, Ch.,
499-502 371-374
see
Barth, R.
Jagdhold, U., s e e Bauch, L. Jansen, H., M. de Boer, J. Burger, R. Legtenberg and M. Elwenspoek, The black silicon method II: the effect of mask material and loading on the reactive ion etching of deep silicon trenches Jedrasik, P., Neural networks application for fast, direct correction kernel generation for proximity effects correction in Electron Beam Lithography Johnson, M.B., M. Pfister, S.F. Alvarado and H.W.M. Salemink, Atomic-scale analysis of quantum nanostructures with the STM Johnson, M.B., J.-P. Bourgoin and B. Michel, Doping profiling with scanning surface harmonic microscopy Johnson, S., s e e Zheng Cui Jonckheere, R., A. Tritchkov, V. Van Driessche and L. Van den hove, Electron beam/DUV intra-level mix-and-match lithography for random logic 0.25/zm CMOS Jonckheere, R., s e e Bracher, B.H. Jones, R.G., s e e Miller Tate, P.C. Jorritsma, J., s e e Kramer, N. Jos, H.F.F., s e e Webster, M.N. Jouneau, P.-H., s e e Gotza, M.
475-480 191-194 27- 30 539-542 259-262 231-234 531-534 409-412 47- 50 91- 94 129-132
Katagiri, S., s e e lto, M. Katnani, A., s e e Sachdev, H. Kern, D.P., s e e Fresser, H.S. Kessler, M., s e e Hommel, J. Kieslich, A., s e e Orth, A. Kiknkawa, A . , s e e Imura, R. Kitamura, T., High stability measurement in the sub-half micron region based on new
285-290 393-396 159-162 445-448 343-346 105-108
ESD technology Kjellberg, T., s e e Hagberg, M. Kley, E.-B., s e e Briinger, W. Knapek, E., s e e Stemmer, A. Knapek, E., s e e Zarschizky, H. Knnrek, C.S., s e e Novembre, A.E. Kobayashi, Y., s e e Fukuda, H. Koch, T.L., s e e Tennant, D.M. Koek, B., s e e Turcu, I.C.E. Kohn, E., s e e Mittermeier, E. Kometani, J.M., s e e Novembre, A.E. Koops, H.W.P., s e e Urban, J. Koops, H.W.P., s e e Dahm, G. Koren, U., s e e Tennant, D.M. Koster, N.B., s e e Louis, E. Kiister, T., s e e Gondermann, J.
535-538 435-438 135-138 171-174 175-178 389-392 213-216 427-434 295-298 75- 78 389-392 113-116 263-266 427-434 235-238 83- 86
Author
Index
Volume
27
557
Hudek, P. s e e Imura, R. Kramer, N., J. Jorritsma, H. Birk and C. Sch6nenberger, Nanometer lithography on silicon and hydrogenated amorphous silicon with low-energy electrons Kruit, P., s e e de Jager, P.W.H. Kumar, U., s e e Novembre, A.E. Kupka, R.K., Y. Chen, R. Planel and H. Launois, Fabrication of quantum wires and dots by X-ray lithography and Ga + implantation enhanced intermixing Kurihara, K., s e e Namatsu, H. Kurihara, K., K. Iwadate, H. Namatsu, M. Nagase and K. Murase, Electron beam nanolithography with image reversal by ECR plasma oxidation Kurz, H., s e e Gondermann, J. Kurz, It., s e e Barth, R. Kwong, R., s e e Sachdev, H.
401-404 105-108
Lake, P., s e e Turcu, I.C.E. Lang, R.J., s e e Tiberio, R.C. Langheinrich, W., The influence of the substrate on proximity effect and exposure dose for the inorganic resist LiF(AIF3) Larsson, A., s e e Hagberg, M.Launois, H., s e e Kupka, R.K. Lee, K.Y., K. Ismail, J.O. Chu, W.X. Gao and S. Washburn, Fabrication of AharonovBohm rings in Si/SiGe heterostructure Lefranc, G., s e e Stemmer, A. Lefranc, G., s e e Zarschizky, H. Legtenberg, R., s e e Jansen, H. Lercel, M.J., G.F. Redinbo, M. Rooks, R.C. Tiberio, H.G. Craighead, C.W. Sheen and D.L. Allara, Electron beam nanofabrication with self-assembled monolayers of alkylthiols and alkylsiloxanes Leuschner, R., E. Schmidt, H. Ohlmeyer, R. Sezi and M. Irmscher, Bilayer resist based on wet silylation (CARL process) for e-beam lithography Lin, Y.-C., s e e Loong, W.-A. L6chei, B., s e e Webster, M.N. L6chel, B., s e e Maciossek, A. Loong, W.-A., S.-L. Shy and Y.-C. Lin, 0.35/zm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigma L6schner, H., s e e Br/inger, W.H. Louis, E., H.-J. Voorma, N.B. Koster, F. Bijkerk, Yu.Ya. Platonov, S.Yu. Zuev, S.S. Andreev, E.A. Shamov and N.N. Salashchenko, Multilayer coated reflective optics for extreme UV lithography Lnkey, P.W., J. Caro, L.J. Geerligs, K. Werner and S. Radelaar, Fabrication of submicron Si/SiGe double barrier resonant tunneling structures Lyding, J.W., s e e Abeln, G.C.
295-298 67- 70
McKinnon, A.W.,
113-116
Kosti~, I.,
see
Koyanagi, tt.,
s e e Urban, J. Maciossek, A., B. L6chel, H.-J. Quenzer, B. Wagner, S. Schulze and J. Noetzel, Galvanoplating and sacrificial layers for surface micromachining
47- 50 327-330 389-392 311-316 71- 74 125-128 83- 86 499-502 393-396
199-202 435-438 311-316 79- 82 171-174 175-178 475-480
43- 46 385-388 275-278 91- 94 503-508 275-278 323-326
235-238 87- 90 23- 26
503-508
558
Author Index Volume 27
Maes, J.W.H., W. Heuvelman, J. Caro, K. Werner, H.W. Zandbergen and S. Radelaar, Nanofabrication of Si point contacts using gas-source MBE: towards single-crystalline devices Maggiora, R., s e e Raptis, I. Maldonado, J.R., R. DellaGuardia and E. Babich, Determination of helium presence in the mask/wafer gap of X-ray lithography steppers Mamin, H.J., s e e Reiley, T.C. Maquin, P., s e e Bartha, J.W. 271-274, Martin, B., s e e Arthur, G. Martin, B., s e e Zheng Cui Martin, R.D., s e e Tiberio, R.C. Maruno, S., K. Inanaga and T. Isu, Nanoscale manipulation of C60 with a scanning tunneling microscope Mastrogiacomo, L . , s e e Raptis, I. Mayerhofer, F., s e e Stemmer, A. Melngailis, J., s e e Br/inger, W.H. Messina, G., A. Paoletti, S. Santangelo and A. Tucciarone, A single quality factor for electron backscattering from thin films Michel, B., s e e Johnson, M.B. Miller, B.I., s e e Tennant, D.M. Miller Tate, P.C., R.G. Jones, J. Murphy and J. Everett, Simple model of the lithographic response of "Hatzakis" chemicaUy-amplified resists Mitchell, P., s e e Turcu, I.C.E. Mittermeier, E., D. Geiger, S. Str/ihle and E. Kohn, Fabrication of dual-gate FET structures with short gate length and nm spacing Mixon, D.A., s e e Novembre, A.E. Miyamoto, M., s e e Imura, R. Monk, D.W. and R.O. Gale, The digital micromirror device for projection display Moors, P.M.A., s e e Webster, M.N. Miihle, R., s e e Vetterli, D. Miiller, J., s e e Orth, A. Miiller, K.P., K. Roithner and H.-J. Timme, Selectivity and Si-load in deep trench etching Miinzel, N., s e e Nalamasu, O. Miinzel, N., s e e Novembre, A.E. Murad, S.K., P.D. Wang, N.I. Cameron, S.P. Beaumont and C.D.W. Wilkinson, Damage free and selective RIE of GaAs/A1GaAs in SiCl 4/SiF 4 plasma for MESFET and pseudomorphic HEMT's gate recess etching Murakami, K., s e e Oizumi, H. Murase, K., s e e Namatsu, H. Murase, K., s e e Kurihara, K. Murphy, J., s e e Miller Tate, P.C. Musil, C., s e e Patterson, B.D. Musil, C.R., s e e Vetterli, D. Nagase, M., s e e Namatsu, H. Nagase, M., s e e Kurihara, K. Nagata, H., s e e Oizumi, H.
99-103 417-420 303-306 495-498 453-456 279-282 331-334 67- 70 39- 42 417-420 171-174 323-326 183-186 539-542 427-434 409-412 295-298 75- 78 389-392 105-108 489-493 91- 94 339-342 343-346 457-462 367-370 389-392 439-444 317-320 71- 74 125-128 409-412 347-350 339-342 71- 74 125-128 317-320
Author Index Volume 27
Nalamasu, O., E. Reichmanis, A.G. Timko, R. Tarascon, A.E. Novembre, S. Slater, H. Holzwarth, P. Falcigno and N. Miinzel, A unified approach to resist materials design for the advanced lithographic technologies Nalamasu, O., s e e Novembre, A.E. Namatsu, H., M. Nagase, K. Kurihara, K. Iwadate and K. Murase, 10-nm silicon lines fabricated in (110) silicon Namatsu, H., s e e Kurihara, K. Naqvi, S.S.H., s e e Blattner, P. Nassiopoulos, A.G., s e e Gogolides, E. Nebiker, P.W., s e e Vetterli, D. Neenan, T.X., s e e Novembre, A.E. Noetzel, J., s e e Maciossek, A. Norton, K., s e e Prior, R. Novembre, A.E., s e e Nalamasu, O. Novembre, A.E., J.M. Kometani, C.S. Knurek, U. Kumar, T.X. Neenan, D.A. Mixon, O. Nalamasu and N. Miinzel, Identification of sensitive positive and negative working resist materials for proximity X-ray lithography
Ogawa, T., s e e Ito, M. Ohlmeyer, H., s e e Leuschner, R. Ohtani, M., s e e Oizumi, H. Oizumi, H., s e e Ito, M. Oizumi, H., M. Ohtani, Y. Yamashita, K. Murakami, H. Nagata and N. Atoda, Resist performance in 5 nm and 13 nm soft X-ray projection lithography Okazaki, S., s e e Fukuda, H. Op de Beeck, M., s e e Van Driessche, V. Orth, A., J.P. Reithmaier, J. Miiller, A. Kieslich, A. Forchel, J. Weber, I. Gyuro and E. Zielinski, Gain-modulated second order distributed feedback gratings fabricated by maskless focused ion beam implantation in GalnAsP heterostructures Ozaki, Y., T. Horiuchi and K. Harada, Point and 2-dimensional measurement of phase shifting masks Pagnia, H., s e e Urban, J. Paneva, R., G. Temmel, E. Burte and H. Ryssel, Nitrogen implanted etch-stop layers in silicon Paniez, P.J., s e e Schiltz, A. Paoletti, A., s e e Messina, G. Patterson, B.D., C. Musil, H. Siegwart and A. Vonlanthen, Focused-ion beam modification of waveguide photonic devices P~itzel, R., s e e Endert, H. Peckerar, M.C., s e e Burkhardt, M. P~rez-Murano, F., s e e Barniol, N. Pfeiffer, H.C. and W. Stickel, PREVAIL-An e-beam stepper with variable axis immersion lenses Pfister, M., s e e Johnson, M.B. Planel, R., s e e Kupka, R.K. Platonov, Yu.Ya., s e e Louis, E. Plontke, R., s e e Briinger, W.
559
367-370 389-392 71- 74 125-128 543-546 449-452 339-342 389-392 503-508 147-150 367-370
389-392 285-290 385-388 317-320 285-290 317-320 213-216 243-246
343-346 255-258 113-116 509-512 413-416 183-186 347-350 221-224 307-310 31- 34 143-146 27- 30 311-316 235-238 135-138
560
Author Index Volume 27
Pol, V., s e e Yuan, C.-M. Powell, M., s e e Endert, H. Prewett, P., s e e Turcu, I.C.E. Prewett, P.D., s e e Huq, S.E. Prewett, P.D., s e e Zheng Cui 259-262, Prins, F.E., s e e Fresser, H.S. Prior, R., A. Benveniste and K. Norton, MEBES ® 4500 raster scan techniques: calibration and control Prongu6, D., H. Rothuizen, F. Vasey and P. Vettiger, Enhanced e-beam system for the fabrication of optical elements Prusseit, W., s e e Barth, R. Puech, M., s e e Bartha, J.W. Puyenbroek, R., s e e Rousseeuw, B.A.C.
251-253 221-224 295-298 95- 98 331-334 159-162 147-150 163-166 499-502 453-456 375-379
Quenzer, H.-J., s e e Maciossek, A. Quenzer, H.J., s e e Henke, W.
503-508 267-270
Radelaar, S., Radelaar, S., Radelaar, S., Radelaar, S . , Radelaar, S . ,
87- 90 91- 94 99-103 117-120 481-485
Lukey, P.W. Webster, M.N. s e e Maes, J.W.H. s e e Fortuin, A.W. s e e van der Drift, E. Ragoisha, G.A., V.S. Gurin and A.L. Rogach, Nanostructures self-assembling from nonequilibrium silver nanophase on conducting nonmetallic substrates Raith, H.F., s e e Dubonos, S.V. Rangelow, I.W., s e e Dahm, G. Rangelow, I.W., s e e Hudek, P. Rangelow, I.W. and P. Hudek, MEMS fabrication by lithography and reactive ion etching (LIRIE) Rapp, B., s e e BroBardt, R. Raptis, I., M. Gentili, E. Di Fabrizio, R. Maggiora, M. Baciocchi, L. Grella and L. Mastrogiacomo, Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 /~m Rebhan, U., s e e Endert, H. Redinbo, G.F., s e e Lercel, M.J. Reeves, C.M., s e e Turcu, I.C.E. Reichmanis, E., s e e Nalamasu, O. Reiley, T.C., L.-S. Fan and H.J. Mamin, Micromechanical structures for data storage Reithmaier, J.P., s e e Orth, A. Rhee, K.W., s e e Burkhardt, M. Risch, L., s e e R6sner, W. Rogach, A.L., s e e Ragoisha, G.A. Rohrer, H., The nanometer age: challenge and chance Roithner, K., s e e M/iller, K.P. Romijn, J., s e e Webster, M.N. Ronse, K., s e e Van Driessche, V. Ronse, K., s e e Van den hove, L. Rooks, M., s e e Lercel, M.J. see see
51- 54 195-198 263-266 401-404 471-474 139-142
417-420 221-224 43- 46 295-298 367-370 495-498 343-346 307-310 55- 58 51- 54 3- 15 457-462 91- 94 243-246 357-365 43- 46
Author
Index
Volume
27
Roskos, H.G., s e e Gondermann, J. R6sner, W., F. Hofmann, T. Vogelsang and L. Risch, Simulation of single electron circuits Ross, A.W.S., s e e Turcu, I.C.E. Rothuizen, H., s e e Prongu6, D. Rousseeuw, B.A.C., R. Puyenbroek, E. van der Drift and J.C. van de Grampel, Silicon containing resists with positive and negative tone Ryssel, H., s e e Paneva, R. Sachdev, H., R. Kwong, W. Huang, A. Katnani and K. Sachdev, New negative tone resists for sub-quarter micron lithography Sachdev, K., s e e Sachdev, H. Saint-Crieq, B., s e e Gotza, M. Salashchenko, N.N., s e e Louis, E. Salemink, H.W.M., s e e Johnson, M.B. Santangelo, S., s e e Messina, G. Schiltz, A. and P.J. Paniez, In-situ determination of photoresist glass transition temperature by wafer curvature measurement techniques Schittenhelm, P., s e e Gondermann, J. Schmidt, A., s e e Feiertag, G. Schmidt, E., s e e Leuschner, R. Schmidt, M., s e e Feiertag, G. Schnabel, B., s e e Brtinger, W. Scholz, F., s e e Hommel, J. Sch6nenberger, C., s e e Kramer, N. Schulze, S., s e e Maciossek, A. Schwalm, R., s e e Weil3, M. Schweizer, H., s e e Hommel, J. Seidel, P., s e e Wallraff, G. Seya, E., s e e Ito, M. Sezi, R., s e e Leuschner, R. Shamov, E.A., s e e Louis, E. Sheen, C.W., s e e Lercel, M.J. Shen, T.-C., s e e Abeln, G.C. Shevelko, A.P., s e e Bijkerk, F. Shibayama, A., s e e Tsuyuzaki, H. Shimizu, T., Y. Yasuoka and K. Gamo, Fabrication of the edge type thin-film warm carrier devices Shintani, T., s e e Imura, R. Shmaenok, L.A., s e e Bijkerk, F. Shy, S.-L., s e e Loong, W.-A. Siegwart, H., s e e Patterson, B.D. Siewert, J., s e e Barth, R. Silverman, S., s e e Burkhardt, M. Simon, G., s e e Gratzke, U. Slater, S., s e e Nalamasu, O. Smith, ILl., s e e Burkhardt, M. Soga, T., s e e Ito, M.
561 83- 86 55- 58 295-298 163-166 375-379 509-512
393-396 393-396 129-132 235-238 27- 30 183-186 413-416 83- 86 513-516 385-388 513-516 135-138 445-448 47- 50 503-508 405-408 445-448 397-400 285-290 385-388 235-238 43- 46 23- 26 299-301 291-294 121-124 105-108 299-301 275-278 347-350 499-502 307-310 35- 38 367-370 307-310 285-290
562
Author Index Volume 27
Spangenberg, B., s e e Gondermann, J. Spangenberg, B., s e e Barth, R. Staudt-Fischbach, P., s e e Henke, W. Staufer, U., s e e Stebler, C. Staufer, U., s e e Despont, M. Stebler, C., M. Despont and U. Staufer, Miniaturized e-beam writer: testing of components Stebler, C., s e e Despont, M. Stemmer, A., H. Zarschizky, E. Knapek, G. Lefranc and F. Mayerhofer, Efficiency enhancement of diffractive optical elements by variable relief profiling Stemmer, A., s e e Zarschizky, H. Stengl, G., s e e Briinger, W.H. Stevenson, J.T.M., s e e Turcu, I.C.E. Stickel, W., s e e Pfeiffer, H.C. Stolberg, I., s e e Briinger, W. Str/ihle, S., s e e Mittermeier, E. Suzuki, M., s e e Tsuyuzaki, H. Svintsov, A.A. and S.I. Zaitsev, Simulation of heating in powerful electron lithography Svintsov, A.A., s e e Dubonos, S.V.
83- 86 499-502 267-270 155-158 467-470
Takeda, E., s e e Ito, M. Tarascon, R., s e e Nalamasu, O. Tawa, T., s e e Fukuda, H. Teichert, J., s e e Bischoff, L. Temmel, G., s e e Paneva, R. Tennant, D.M., K. Feder, K.F. Dreyer, R.P. Gnall, T.L. Koch, U. Koren, B.I. Miller and M.G. Young, Phase grating masks for photonic integrated circuits fabricated by e-beam writing and dry etching: challenges to commercial applications Terasawa, T., s e e Fukuda, H. Tiberio, R.C., s e e Lercel, M.J. Tiberio, R.C., P.F. Chapman, J.P. Drumheller, R.D. Martin, S. Forouhar and R.J. Lang, Laterally-coupled distributed feedback laser fabricated with electron beam lithography and chemically assisted ion beam etching Timko, A.G., s e e Nalamasu, O. Timme, H.-J., s e e Miiller, K.P. Tomnikov, A., s e e Babin, S. Tritchkov, A., s e e Jonckheere, R. Tsuyuzaki, H., M. Fukuda, M. Suzuki, A. Shibayama and S. Ishihara, Compatibility between two SR steppers Tucciarone, A., s e e Messina, G. Tucker, J.R., s e e Abeln, G.C. Tuinhout, A., s e e Webster, M.N. Turcu, I.C.E., C.M. Reeves, J.T.M. Stevenson, A.W.S. Ross, A.M. Gundlach, P. Prewett, P. Anastasi, B. Koek, P. Mitchell and E Lake, 180nm X-ray lithography with a high repetition rate laser-plasma source Tzevelekis, D., s e e Gogolides, E.
285-290 367-370 213-216 351-354 509-512
155-158 467-470 171-174 175-178 323-326 295-298 143-146 135-138 75- 78 291-294 187-190 195-198
427-434 239-242 43- 46 67- 70 367-370 457-462 167-170 231-234 291-294 183-186 23- 26 91- 94 295-298 381-384
Author
Index
Volume
27
Urban, J., S. Br~iuer, A.W. McKinnon, J. Horn, K. Hjort, H. Pagnia, H.W.P. Koops and H.L. Hartnagel, The scanning tunneling microscope as a tool for nanolithography: writing nanostructures on Si (110) in air Utz, B., s e e Barth, R. Van Driessche, ¥., s e e Jonckheere, R. Van Driessche, V., A.-M. Goethals, M. Op de Beeck, K. Ronse and L. Van den hove, DUV lithography for 0.35 ~m CMOS processing van de Grampel, J.C., s e e Rousseeuw, B.A.C. Van den hove, L., s e e Jonckheere, R. Van den hove, L., s e e Van Driessche, V. Van den hove, L. and K. Ronse, Challenges for 0.35-0.25/~m optical lithography van tier Drift, E., s e e Rousseeuw, B.A.C. van tier Drift, E., T. Zijlstra, E.J.M. Fakkeldij, R. Cheung, K. Werner and S. Radelaar, XPS study on dry etching of Si/GexSil_ x van tier Kolk, M., s e e Fortuin, A.W. van Helleputte, H.R.J.R., T.B.J. Haddeman, M.J. Verheijen and J.-J. Baalbergen, Comparative study of 3D measurement techniques (SPM, SEM, TEM) for submicron structures van Honk, A.G.J.R., s e e Bijkerk, F. Vasey, F., s e e Prongu6, D. Verbruggen, A.H., s e e Webster, M.N. Verbruggen, A.H., s e e Fortuin, A.W. Verheijen, M.J., s e e de Koning, H. Verheijen, M.J., s e e van Helleputte, H.R.J.R. Vetterli, D., M. D6beli, R. Miihle, P.W. Nebiker and C.R. Musil, Characterization of focused ion beam induced damage Vettiger, P., s e e Prongu6, D. Vettiger, P., s e e Despont, M. Vogelsang, T., s e e R6sner, W. Voges, E., s e e Yunkin, V.A. V61kei, R., s e e Dfindliker, R. V611inger, O., s e e Waas, T. Vonlanthen, A., s e e Patterson, B.D. Voorma, H.-J., s e e Louis, E. Waas, T., H. Eisenmann, O. V611inger and H. Hartmann, Proximity correction for high CD accuracy and process tolerance Wagner, B., s e e Henke, W. Wagner, B., s e e Maciossek, A. Wallraff, G., J. Hutchinson, W. Hinsberg, F. Houle and P. Seidel, Kinetics of thermal and acid-catalyzed deprotection in deep-UV resist materials Wang, P.D., s e e Murad, S.K. Washburn, S., s e e Lee, K.Y. Watson, J., s e e Zheng Cui Weber, J., s e e Orth, A.
563
113-116 499-502
231-234 243-246 375-379 231-234 243-246 357-365 375-379 481-485 117-120
547-550 299-301 163-166 91- 94 117-120 421-424 547-550 339-342 163-166 467-470 55- 58 463-466 205-211 179-182 347-350 235-238 179-182 267-270 503-508 397-400 439-444 79- 82 331-334 343-346
564
Author Index Volume 27
Webster, M.N., A. Tuinhout, A.H. Verbruggen, J. Romijn, S. Radelaar, B. L6chel, H.F.F. Jos and P.M.A. Moors, Fabrication of 100 nm polysilicon-emitter transistors using e-beam lithography WeiB, M., H. Binder and R. Schwalm, Modeling and simulation of a chemically amplified DUV resist using the effective acid concept Wengelink, J., H. Engel and W. D61dissen, Semitransparent mask technique for relief type surface topographies Werner, K., s e e Lukey, P.W. Werner, K., s e e Maes, J.W.H. Werner, K., s e e van der Drift, E. Wilkinson, C.D.W., Nanostructures in biology Wilkinson, C.D.W., s e e Murad, S.K. Wolf, H., s e e Barth, R.
Yamanashi, H., s e e Ito, M. Yamashita, Y., s e e Oizumi, H. Yannakopoulou, K., s e e Gogolides, E. Yasuoka, Y., s e e Shimizu, T. Ye, J.H., s e e Barniol, N. Young, M.G., s e e Tennant, D.M. Yuan, C.-M. and V. Pol, Comparisons of attenuated PSM technologies using etched quartz and embedded materials Yunkin, V.A., D. Fischer and E. Voges, Reactive ion etching of silicon submicron-sized trenches in SF6/CzCI3F3 plasma Zaitsev, S.I., Zaitsev, S.I.,
Svintsov, A.A. Dubonos, S.V. Zandbergen, H.W., s e e Maes, J.W.H. Zandbergen, P., s e e de Koning, H. Zarschizky, H., s e e Stemmer, A. Zarschizky, H., A. Stemmer, E. Knapek and G. Lefranc, Design, CAD-data generation and fabrication of diffractive lenses with submicron feature sizes Zheng Cui, P.D. Prewett and S. Johnson, Transmission and side-lobe effect in attenuated phase shift masks Zheng Cui, P.D. Prewett, J. Watson and B. Martin, FIB repair of defects in rim and attenuated phase shift masks Zielinski, E., s e e Orth, A. Zierbock, M., s e e Brtinger, W. Zijlstra, T., s e e Fortuin, A.W. Zijlstra, T., s e e van der Drift, E. Zuev, S.Yu., s e e Louis, E. see
see
91- 94 405-408 247-250 87- 90 99-103 481-485 61- 65 439-444 499-502 285-290 317-320 381-384 121-124 31- 34 427-434 251-253 463-466 187-190 195-198 99-103 421-424 171-174 175-178 259-262 331-334 343-346 135-138 117-120 481-485 235-238