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Author index volume 48
ELSEVIER
Microelectronic Engineering 48 (1999) 435-447
i!
www.elsevier.nl/ locate/mee
Author Index Volume 48 Abstreiter, G . , s e e Deutschmann, R. Aeker, A., s e e Shanware, A. Afanas'ev, V., s e e Stesmans, A. Afanas'ev, V., s e e Stesmans, A. Afanas'ev, V,, s e e Mrstik, B. Afanas'ev, V., Electronic properties of SiO2/SiC interfaces Afanas'ev, V., s e e Bassler, M. Albohn, J., W. Ffissel, N. Sinh, K. Kliefoth, H. Flietner and W. Fuhs, Two types of traps at the Si/SiO 2 interface characterized by their cross sections Alers, G., s e e Lu, H. Anthony, C. and M. Uren, Effect of post oxidation processing on dry oxides on n-type 4H-SiC Antonova, I., V. Popov, V. Stas, A. Gutakovskii, A. Plotnikov and V. Obodnikov, Splitting and electrical properties of the SO1 structure formed from the heavily boron doped silicon with using of the smart-cut technology Asli, N., S. Gastev, I. Grekhov, P. Seegebrecht, A. Shulekin, S. Tyaginov, M. Vexler and H. Zimmermann, A1/SiOz(2.0-2.5 nm)/p-Si tunnel junction as a light emitter Autran, J., s e e Masson, P. Aymerich, X., s e e Miranda, E. Aymerich, X,, s e e Vizoso, J.
367-370 39- 42 113-116 131-134 143-146 241-248 257-260
Badri, M. and B. Majkusiak, Theory of the MOS/SOI tunnel diode Balk, P., 40 years MOS technology- from empiricism to science Ballutaud, D., A. Boutry-Forveille and A. Nazarov, Hydrogen thermal stability in buried oxides of SO1 structures Balucani, M., s e e Dobrovolsky, V. Barchuk, L, s e e Nazarov, A. Barrels, To, s e e Fitting, H.-J. Bassler, M., V. Afanas'ev, G. Pensl and M. Schulz, Degradation of 6H-SiC MOS capacitors operated at high temperatures Bauer, A., M. Beichele, M. Herden and H. Ryssel, Reliability of ultrathin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon Bauza, D., s e e Maneglia, Y. Bearda, T., s e e Mertens, P.
375-378 3- 6
Elsevier Science B.V. PII: S 0 1 6 7 - 9 3 1 7 ( 9 8 ) 0 0 4 4 1 - 4
159-162 287-290 249-252
383-386
79- 82 211-214 171-174 431-434
359-362 343-346 379-382 427-430 257-260 59- 62 189-192
436
Author Index Volume 48
199-206 139-142 283-286 59- 62
Beck, U., s e e Maser, K. Beeehinol., J., s e e Mooney, M. Beiehele, M., s e e Bauer, A. Beitel, G., H. Wendt, E. Fritsch, V. Weinrich, M. Engelhardt, B. Hasler, T. R6hr, R. Bergmann, U. Scheler, K.-H. Malek, N. Nagel, A. Gschwandtner, W. Pamler, W. H6nlein, C. Dehm and C. Mazur6, A novel low-temperature (Ba, Sr)TiO3(BST) process with Ti/TiN barrier for Gbit DRAM applications Bergmann, R., s e e Beitel, G. Billon, T., s e e Simon, L. Blaekstone, S., Recent advances in wafer bonding of silicon and alternative materials Bonafos, C., s e e Garrido, B. Boutry-Fol'veille, A., s e e Ballutaud, D. Boyd, I., s e e Mooney, M. Bracale, A., s e e Ferlet-Cavrois, V. Bl'avaix, A., D. Goguenheim, N. Revil and E. Vincent, Turn-around effects during dynamic operation in 0.25 p,m CMOS technology Brubaker, M., s e e Roman, P. Briieidlneier, E., A. Kux, R. Kakoschke and H. Palm, Charge trapping in ONO interpoly dielectric of FLOTOX EEPROM cells Brunnel., K., s e e Deutschmann, R. Buchanan, D., s e e Gusev, E.
411-414 367-370 67- 70
Cantin, J., s e e Hugonnard-Bruy~re, E. Chang, J., s e e Lu, H. Cheng, B., s e e Mahapatra, S. Chiang, M., s e e Yeh, B. Chovet, A., s e e Ionescu, A. Chun, W., s e e Zvanut, M. Claeys, C., s e e Lukyanchikova, N. Clarke, J., s e e Riley, L. Colinge, J.-P., s e e Nazarov, A. Ciip, R., s e e Tao, G. Copel, M., s e e Gusev, E. Col'nelissen, I., s e e Mertens, P. Ci'ean, G., s e e Mooney, M. Cristoloveanu, S., s e e Ernst, T. Cl.istoloveanu, S., s e e Munteanu, D. Cuadl.as, A., s e e Garrido, B.
277-280 287-290 193-196 235-238 371-374 347-350 185-188 227-230 379-382 419-422 67- 70 199-206 283-286 339-342 355-358 207-210
Davis, R., s e e Therrien, R. de Bokx, P., s e e Houssa, M. De Gendt, S., s e e Houssa, M. De Gendt, S., s e e Mertens, P.
303-306 43- 46 43- 46 199-206
299-302 299-302 261-264 313-318 207-210 359-362 283-286 351-354 163-166 181-184
A u t h o r I n d e x Volume 4 8
Degraeve, R., s e e Kaczer, B. Degraeve, R., s e e Sii, H. Dehm, C., s e e Beitel, G. Deutsehmann, R., M. Huber, R. Neumann, K. Brunner and G. Abstreiter, Direct sub-lxm lateral patterning of SOI by focused laser beam induced oxidation Devine, R., s e e Girault, V. Devine, R., s e e Vanheusden, K. DiCioccio, L., s e e Hugonnard-Bruy~re, E. Dijsktra, J., s e e Tao, G. DiMaria, D., s e e Stathis, J.
437 47- 50 135-138 299-302 367-370 167-170 363-366 277-280 419-422 395-401
Dittrich, T., V. Timoshenko, M. Schwartzkopff, E. Hartmann, J. Rappich, P. Kashkarov and F. Koch, Effect of local surface structure on electronic properties of hydrogenated silicon surfaces Dobrovolsky, V,, L. Ishchuk, G. Ninidze, M. Balucani and A. Ferrani, Highamplitude and high-frequency oscillations of temperature and current in SOI structures Du Port de Pontcharra, J., s e e Pelloie, J.-L.
75- 78
343-346 327-334
Eeeleston, W., The effects of polysilicon grain boundaries on MOS based devices Eeker, K., s e e Maser, K. Eisele, I., s e e Rao, V.R. Engelhardt, M., s e e Beitel, G. Ermolieff, A., s e e Simon, L. Ernst, T., D. Munteanu, S. Cristoloveanu, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi and K. Murase, Investigation of SOI MOSFETs with ultimate thickness Evans, A., s e e Riley, L.
105-108 139-142 223-226 299-302 261-264
Faynot, O.,
327-334 351-354
s e e Pelloie, J.-L. Faynot, O., s e e Ferlet-Cavrois, V. Ferlet-Cavrois, V., A. Bracale, C. Marcandella, O. Musseau, J. Pelloie, C. Raynaud and O. Faynot, Designing MOS/SOI transistors for high-frequency and low-voltage applications Fernandez, J., s e e Riley, L. Ferrani, A., s e e Dobrovolsky, V. Fitting, H.-J., E. Schreiber, T. Barfels and A. yon Czarnowski, Degradation and breakdown of SiO2-1ayers due to hot and ballistic electron transport Fleetwood, D., s e e Vanheusden, K. Flietner, H., s e e Albohn, J. Fonseea, L., s e e Garrido, B. Franz, M., s e e Garrido, B. Friedriehs, P., s e e Treu, M. Fritseh, E., s e e Beitel, G. Fuhs, W., s e e Albohn, J. Fiissel, W., s e e Albohn, J.
339-342 227-230
351-354 227-230 343-346 427-430 363-366 159-162 207-210 207-210 253-256 299-302 159-162 159-162
438
Author Index Volume 48
Futatsuyama, T., s e e Fuyuki, T. Fuyuld, T., T. Futatsuyama, Y. Ueda, K. Moriizumi and H. Matsunami, Novel mechanisms in nm-thick gate SiO 2 growth at low temperatures utilizing activated oxygen
35- 38
35- 38 227-230 185-188 287-290
Gallas, B., s e e Riley, L. Garbar, N., s e e Lukyanchikova, N. Garfunkel, E., s e e Lu, H. Garrido, B., A. Cuadras, C. Bonafos, J. Morante, L. Fonseca, M. Franz and K. Pressel, Thermal dry oxidation of Sil _x_yGexCy strained layers grown on silicon Garriga, M., s e e Vizoso, J. Gastev, S., s e e Asli, N. Gehrke, T., s e e Therrien, R. Gelpey, J., s e e Song, S. Ghetti, A., E. Sangiorgi, T. Sorsch and I. Kizilyalli, The role of native traps on the tunneling characteristics of ultrathin (1.5-3 nm) oxides Ghidini, G., s e e Spinelli, A. Girauit, V., R. Devine, W. Warren and K. Vanheusden, A study of proton generation in Si / SiO 2/ Si structures Goguenheim, D., s e e Bravaix, A. Gomeniuk, Y., s e e Lysenko, V. Grabmeier, J., s e e Lambert, U. GraboUa, T., s e e Rao, V.R. Grambole, D., s e e Maser, K. Grassl, A., s e e Yuwono, B. Green, M., T. Sorsch, G. Timp, D. Muller, B. Weir, P. Silverman, S. Moccio and Y. Kim, Understanding the limits of ultrathin SiO/ and Si-O-N gate dielectrics for sub-50 nm CMOS Grekhov, I., s e e Asli, N. Gritsenko, V., s e e Morokov, Y. Groeseneken, G., s e e Kaczer, B. Groeseneken, G., s e e Sii, H. Griitzschel, R., s e e Maser, K. Griitzschel, R., s e e von Borany, J. Grouillet, A., s e e Pelloie, J.-L. Gsehwandtner, A., s e e Yuwono, B. Gsehwandtner, A., s e e Beitel, G. Gusev, E., D. Buchanan, P. Jamison, T. Zabel and M. Copel, Ultrathin nitrided gate dielectrics by plasma-assisted processing Gustafsson, T., s e e Lu, H. Gutakovskii, A., s e e Antonova, I.
67- 70 287-290 383-386
Hall, S., s e e Riley, L. Hanseh, W., s e e Rao, V.R.
227-230 223-226
207-210 431-434 79- 82 303-306 55- 58 31- 34 151-154 167-170 163-166 265-268 127-130 223-226 139-142 51- 54
25- 30 79- 82 175-178 47- 50 135-138 139-142 231-234 327-334 51- 54 299-302
Author Index Volume 48
Harris, J.,
Riley, L. s e e Dittrich, T. Hasler, B., s e e Beitel, G. Hattori, T., H. Nohira and K. Takahashi, The initial growth steps of ultrathin gate oxides Hauser, J., s e e Shanware, A. Hauser, J., s e e Shanware, A. Heinig, K.-H., s e e yon Botany, J. Henson, K., s e e Shanware, A. Henson, K., s e e Shanware, A. Herden, M., s e e Bauer, A. Herrmann, F., s e e Maser, K. Heyns, M., s e e Houssa, M. Heyns, M., s e e Mertens, P. Itirose, M., s e e Miyazaki, S. Holleman, J., s e e Houtsma, V. Hiinlein, W., s e e Beitel, G. Horiguchi, S., s e e Ernst, T. Houssa, M., S. De Gendt, P. de Bokx, P. Mertens and M. Heyns, X-ray irradiation effect on the reliability of ultrathin gate oxides and oxynitrides Houssa, M., s e e Mertens, P. Houtsma, V., J. Holleman, C. Salm and P. Woerlee, SILC in MOS capacitors with poly-Si and poly-Si07Ge03 gate material Huber, A., s e e Lambert, U. Huber, M., s e e Deutschmann, R. Hughes, H.L., s e e Rebohle, L. Hugonnard-Bruy~re, E., J. Cantin, H. von Bardeleben, F. Letertre, L. DiCioccio and T. Ouisse, Defect studies in epitaxial SiC-6H layers on insulator (SiCOI) Humphrey, J., s e e Riley, L. Hurley, P., s e e Mooney, M. see
Hartmann, E.,
Ielmini, D.,
Spinelli, A. s e e Yuwono, B. Innertsberger, G., s e e Kerber, M. Ionescu, A. and A. Chovet, Sub-band-gap impact ionization events in transient regimes of floating body SOI devices Irrera, F. and F. Russo, Off-stochiometric silicon oxides for applications in lowvoltage flash memories Ishchuk, L., s e e Dobrovolsky, V. Itoh, H., M. Nagamine, H. Satake and A. Toriumi, A study of atomically flat SiO2/Si interface formation mechanism based on the radical oxidation kinetics Iwai, H., Outlook of MOS devices into the next century see
Innertsberger, G.,
Jamison, P., s e e Gusev, E. Jeynes, C., s e e Riley, L.
439
227-230 75- 78 299-302 17- 24 39- 42 295-298 231-234 39- 42 295-298 59- 62 139-142 43- 46 199-206 63- 66 415-418 299-302 339-342 43- 46 199-206 415-418 127-130 367-370 335-338 277-280 227-230 283-286 151-154 51- 54 147-150 371-374 423-426 343-346 71- 74 7- 14 67- 70 227-230
440
Jimenez, C.,
Author Index Volume 48
see
Mooney, M.
Kaezer, B., R. Degraeve, N. Pangon, T. Nigam and G. Groeseneken, Investigation of temperature acceleration of thin oxide time-to-breakdown Kakosehke, R., s e e Briicklmeier, E. Kamieniecki, E., s e e Roman, P. Kanebako, K., s e e Matsukawa, N. Kaneta, C., T. Yamasaki, T. Uchiyama, T. Uda and K. Terakura, Structure and electronic property of S i(100)/SiO 2 interface Kar, S. and P. Zaumseil, Characteristics of ultrathin (4-7 nm) gate oxides for SiGe quantum well MOS structures Karna, S. and H. Kurtz, Quantum mechanical characterization of E'-type centers in a-SiO x films Kashkarov, P., s e e Dittrich, T. Keister, J., s e e Yang, H. Kelly, P., s e e Mooney, M. Kenis, K., s e e Mertens, P. Kerber, M., U. Schwalke and G. Innertsberger, Evidence for spatial distribution of traps in MOS systems after Fowler Nordheim stress K i m , Y . , s e e Green, M. Kissinger, G., s e e Lambert, U. Kizilyalli, I., s e e Ghetti, A. Kliefoth, K., s e e Albohn, J. Klimenkov, M., s e e yon Botany, J. Koch, F., s e e Dittrich, T. Koch, F., s e e Lii, J. Kohno, A., s e e Miyazaki, S. Krauser, J., s e e Maser, K. Krautschneider, W., s e e Yuwono, B. Kubler, L., s e e Simon, L. Kuper, F., s e e Tao, G. Kurtz, H., s e e Karna, S. Kux, A., s e e Briicklmeier, E. Kwong, D., s e e Song, S. Lacaita, A., s e e Spinelli, A. Lacaita, A. and L. Perron, Physics and characterization of transient effects in SOI transistors Lambert, U., A. Huber, J. Grabmeier, G. Obermeier, J. Vanhellemont, R. Wahlich and G. Kissinger, Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon L e e , C . , s e e Song, S. Lee, D.-O., s e e Roman, E Lee, S., s e e Song, S. Leihkauf, R., s e e Maser, K.
283-286 47- 50 411-414 181-184 121-124 117-120 83- 86 109-112 75- 78 307-310 283-286 199-206 147-150 25- 30 127-130 31- 34 159-162 231-234 75- 78 95- 99 63- 66 139-142 51- 54 261-264 419-422 109-112 411-414 55- 58 151-154 319-326
127-130 55- 58 181-184 55- 58 139-142
Author Index Volume 48
Letertre, F.,
s e e Hugonnard-Bruy~re, E. Li, V., s e e Shanware, A. Liu, J., s e e Yeh, B. Loewenstein, L., s e e Mertens, P. Lu, It., N. Yasuda, E. Garfunkel, T. Gustafsson, J. Chang, R. Opila and G. Alers, Structural properties of thin films of high dielectric constant materials on silicon Lii, J. and F. Koch, Polar phonon scattering at the Si-SiO 2 interface Luan, H., s e e Song, S. Lucovsky, G. and J. Phillips, The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-k gate dielectrics into aggressively-scaled CMOS Si devices Lucovsky, G., s e e Therrien, R. Lucovsky, G., s e e Yang, H. Lukyanchikova, N., M. Petrichuk, N. Garbar, E. Simoen and C. Claeys, RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions Lundgren, E, s e e Ragnarsson, L.-A. Lysenko, V., I. Tyagulski, Y. Gomeniuk, I. Osiyuk and A. Mikhnov, Electrical characterization of the amorphous SiC-pSi structure Lysenko, V., s e e Nazarov, A. o
441
277-280 39- 42 235-238 199-206 287-290 95- 99 55- 58
291-294 303-306 307-310
185-188 219-222 265-268 379-382
Macfarlane, P. and M. Zvanut, Dangling bond defects in SiC: The dependence on oxidation time
269-272
Mahapatra, S., V. Ramgopal Rao, C. Parikh, J. Vasi, B. Cheng and J. Woo, A study of 100 nm channel length asymmetric channel MOSFETs by using charge pumping
Mahapatra, S., s e e Rao, V.R. Majkusiak, B., s e e Badri, M. Malek, K.-H., s e e Beitel, G. Maneglia, Y. and D. Bauza, On the origin of Flicker noise in MOSFETs Mao, A.,
Song, S. Marcandella, C,, s e e Ferlet-Cavrois, V. Marcus, S., s e e Song, S. Martin, F., s e e Vizoso, J. Martinez, X., s e e Vizoso, J. Maruyama, T., s e e Miyazaki, S. Maser, K., U. Mohr, R. Leihkauf, K, Ecker, U. Beck, D. Grambole, R. Gr6tzschel, F. Herrmann, J. Krauser and A. Weidinger, Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose 15N ion beam irradiation ' Masson, P., P. Morfouli, J. Autran and J. Wortman, Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by low-pressure rapid thermal chemical vapor deposition Massoud, H., s e e Shanware, A. see
193-196 223-226 375-378 299-302 189-192 55- 58 351-354 55- 58 431-434 431-434 63- 66
139-142
211-214 39- 42
442
Author Index Volume 48
Shiely, J. Shanware, A. Mastrapasqua, M., Low voltage flash memory by use of substrate bias Matsukawa, N. and K. Kanebako, A new model for TDDB lifetime distribution of
101-104 295-298 389-394
SiO2 Matsunami, H., s e e Fuyuki, T. Mazur6, C., s e e Beitel, G. McMarr, P., s e e Mrstik, B. Mertens, E, s e e Houssa, M. Mertens, P., T. Bearda, M. Houssa, L. Loewenstein, I. Cornelissen, S. De Gendt,
121-124 35- 38 299-302 143-146 43- 46
Massoud, H., Massoud, H.,
see
see
K. Kenis, I. Teerlinck, R. Vos, M. Meuris and M. Heyns, Advanced cleaning for the growth of ultrathin gate oxide Meuris, M., s e e Mertens, P. Mikhnov, A., s e e Lysenko, V. Mirabedini, M., s e e Shanware, A. Miranda, E., J. Sufi6, R. Rodrfguez, M. Nafrfa and X. Aymerich, A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction Miyazaki, S., T. Maruyama, A. Kohno and M. Hirose, Photoelectron yield spectroscopy of electronic states at ultrathin SiO2/Si interfaces Moccio, S., s e e Green, M. Modelli, A., Reliability of thin dielectric for non-volatile applications Mohr, U., s e e Maser, K. Mooney, M., E Hurley, B. O'Sullivan, J. Beechinor, J.-Y. Zhang, I. Boyd, E Kelly, J.-E Sgnateur, G. Crean, C. Jimenez and M. Paillous, Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source Morante, J,, s e e Garrido, B. Morfouli, P., s e e Masson, P. Moriizumi, K., s e e Fuyuki, T. Morokov, Y., Y. Novikov, V. Gritsenko and H. Wong, Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric Mrstik, B., V. Afanas'ev, A. Stesmans and P. McMarr, Relationship between hole trapping and oxide density in thermally grown SiO 2 Muller, D., s e e Green, M. Munteanu, D., s e e Ernst, T. Munteanu, D. and S. Cristoloveanu, Model for the extraction of the recombination lifetime in partially depleted SOI MOSFETs Murase, K., s e e Ernst, T. Murray, R., s e e Riley, L. Musseau, O., s e e Ferlet-Cavrois, V.
355-358 339-342 227-230 351-354
Nafria, M.,
171-174
see
Miranda, E.
199-206 199-206 265-268 39- 42
171-174 63- 66 25- 30 403-410 139-142
283-286 207-210 211-214 35- 38
175-178 143-146 25- 30 339-342
A u t h o r Index Volume 48
443
Nagamine, M., s e e Itoh, H. Nagel, N., s e e Beitel, G. Nazarov, A . , s e e Ballutaud, D. Nazarov, A., I. Barchuk, V. Lysenko and J.-P. Colinge, Association of hightemperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide Neumann, R., s e e Deutschmann, R. Nigam, T., s e e Kaczer, B. Niimi, I-l., s e e Therrien, R. Niimi, H., s e e Yang, H. Ninidze, G., s e e Dobrovolsky, V. Nohira, H., s e e Hattori, T. Novikov, Y., s e e Morokov, Y.
379-382 367-370 47- 50 303-306 307-310 343-346 17- 24 175-178
Obermeier, G., s e e Lambert, U. Obodnikov, V., s e e Antonova, I. Olbrieh, A., s e e Yuwono, B. Ono, Y., s e e Ernst, T. Opila, R., s e e Lu, H. Osiyuk, I., s e e Lysenko, V. Ouisse, T., s e e Hugonnard-Bruy~re, E. Oulsse, T., s e e Ernst, T. O'Sullivan, B., s e e Mooney, M.
127-130 383-386 51- 54 339-342 287-290 265-268 277-280 339-342 283-286
Paillous, M., s e e Mooney, M. Palm, H., s e e Briicklmeier, E. Pander, W., s e e Beitel, G. Pangon, N., s e e Kaczer, B. Parilda, C., s e e Mahapatra, S. Pasquarello, A., Network transformation processes during oxidation of silicon Pelloie, J., s e e Ferlet-Cavrois, V. Pelloie, J.-L., C. Raynaud, O. Faynot, A. Grouillet and J. Du Port de Pontcharra, CMOS/SOI technologies for low-power and low-voltage circuits Pensl, G., s e e Bassler, M. Perron, L., s e e Lacaita, A. Petriehuk, M., s e e Lukyanchikova, N. Phillips, J., s e e Lucovsky, G. Plotnikov, A., s e e Antonova, I. Popov, V., s e e Antonova, I. Pressel, K., s e e Garrido, B.
283-286 411-414 299-302 47- 50 193-196 89- 94 351-354
Ragnarsson, L.-/~. and P. Lundgren, Surface potential influence on defect passivation kinetics probed by chromium gated metal-oxide-silicon devices Ramgopal Rao, V., s e e Mahapatra, S. Rao, V.R., W. Hansch, S. Mahapatra, D. Sharma, J. Vasi, T. Grabolla and I. Eisele, Low temperature-high-pressure grown thin gate dielectrics for MOS applications
71- 74 299-302 359-362
327-334 257-260 319-326 185-188 291-294 383-386 383-386 207-210 219-222 193-196 223-226
444
Author Index Volume 48
Rappieh, J., s e e Dittrich, T. Raynaud, C., s e e Pelloie, J.-L. Raynaud, C., s e e Ferlet-Cavrois, V. Rebohle, L., A.G. Revesz, W. Skorupa and H.L. Hughes, Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions Revesz, A.G., s e e Rebohle, L. Revil, N., s e e Bravaix, A. Rigamonti, M., s e e Spinelli, A. Riley, L., S. Hall, J. Harris, J. Fernandez, B. Gallas, A. Evans, J. Clarke, J. Humphrey, R. Murray and C. Jeynes, SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation Rodriguez, R., s e e Miranda, E. Riihr, T., s e e Beitel, G. Roman, P., D.-O. Lee, M. Brubaker, E. Kamieniecki and J. Ruzyllo, Characterization of conductive oxides on silicon using non-contact surface charge profiling Rowe, J., s e e Yang, H. Rudenko, T., E. Sveinbj6rnsson and M. Sadeghi, A simple method for the evaluation of the recombination parameters in SiC MOS structures Rupp, R., s e e Treu, M. Russo, F., s e e Irrera, F. Ruzyllo, J., s e e Roman, E Ryssel, H., s e e Bauer, A. Ryssel, H., s e e Treu, M.
75- 78 327-334 351-354
Sadeghi, M., s e e Rudenko, T. Salm, C., s e e Houtsma, V. Sangiorgi, E., s e e Ghetti, A. Satake, H., s e e Itoh, H. Seheler, U., s e e Beitel, G. Sehioesser, T., s e e Yuwono, B. Sehiirner, R., s e e Treu, M. Sehreiber, E., s e e Fitting, H.-J. Sehuiz, M., s e e Bassler, M. Sehwalke, U., s e e Kerber, M. Sehwartzkopff, M., s e e Dittrich, T. Seegebrecht, E, s e e Asli, N. S~nateur, J.-P., s e e Mooney, M. Shanware, A., H. Massoud, A. Acker, V. Li, M. Mirabedini, K. Henson, J. Hauser and J. Wortman, The effects of Ge content in poly-Si l_xGe x gate material on the tunneling barrier in PMOS devices Shanware, A., H. Massoud, E. Vogel, K. Henson, J. Hauser and J. Wortman, Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO 2 and SiOz/TazO 5 dielectrics with oxide scaling
273-276 415-418 31- 34 71- 74 299-302 51- 54 253-256 427-430 257-260 147-150 75- 78 79- 82 283-286
335-338 335-338 163-166 151-154
227-230 171-174 299-302
181-184 307-310 273-276 253-256 423-426 181-184 59- 62 253-256
39- 42
295-298
A u t h o r Index Volume 48
445
Sharma, D., s e e Rao, V.R. Shiely, J. and H. Massoud, Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling Shulekin, A., s e e Asli, N. Sii, H., J. Zhang, R. Degraeve and G. Groeseneken, Relation between hydrogen and the generation of interface state precursors Siiverman, P., s e e Green, M. Simoen, E., s e e Lukyanchikova, N. Simon, L., L. Kubler, A. Ermolieff and T. Billon, Oxidation of 6H-SiC (0001) Sinh, N., s e e Albohn, J. Skorupa, W., s e e Rebohle, L. Song, S., H. Luan, C. Lee, A. Mao, S. Lee, J. Gelpey, S. Marcus and D. Kwong, Ultrathin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N20 oxidation of NH3-nitrided Si Sorsch, T., s e e Green, M. Sorsch, T., s e e Ghetti, A. Spiilane, M., S. Taylor and M. Uren, Validation of the voltage step technique for determination of slow state density in MOS gate oxides Spinelli, A., A. Lacaita, M. Rigamonti, D. Ielmini and G. Ghidini, Separation of electron and hole traps by transient current analysis Stahlbush, R., The effects of radiation-induced defects on H ÷ transport in SiO 2 Stahlbush, R., s e e Zvanut, M. Stas, V., s e e Antonova, I. Stathis, J. and D. DiMaria, Oxide scaling limit for future logic and memory technology Stegemann, K.-H., s e e von Borany, J. Stephani, D., s e e Treu, M. Stesmans, A. and V. Afanas'ev, Nature of the PbJ interface defect in (100)Si/SiO 2 as revealed by electron spin resonance 295i hyperfine structure Stesmans, A. and V. Afanas'ev, Suppression of thermal degradation in standard S i / S i O z by noble gases Stesmans, A., s e e Mrstik, B. Strobel, M., s e e von Borany, J. SurlY, J., s e e Miranda, E. SveinbjiJrnsson, E., s e e Rudenko, T.
223-226
Takahashi, K . , s e e Hattori, T. Takahashi, Y., s e e Ernst, T. Tao, G., R. C6p, J. Dijsktra, F. Kuper and R. Verhaar, The impact of SILC to data retention in sub-half-micron embedded EEPROMs Taylor, S., s e e Spillane, M. Teerlinck, I., s e e Mertens, P. Terakura, K., s e e Kaneta, C. Thees, H.-J., s e e von Borany, J.
17- 24 339-342
101-104 79- 82 135-138 25- 30 185-188 261-264 159-162 335-338
55- 58 25- 30 31- 34 155-158 151-154 215-218 347-350 383-386 395-401 231-234 253-256 113-116 131-134 143-146 231-234 171-174 273-276
419-422 155-158 199-206 117-120 231-234
446
A u t h o r I n d e x Volume 4 8
Therrien, R., H. Niimi, T. Gehrke, G. Lucovsky and R. Davis, Charge redistribution at GaN-GazO 3 Interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces Timoshenko, V., s e e Dittrich, T. Timp, G., s e e Green, M. Torinmi, A., s e e Itoh, H. Treu, M., R. Schrrner, P. Friedrichs, R. Rupp, A. Wiedenhofer, D. Stephani and H. Ryssel, Reliability of metal-oxide-semiconductor capacitors on 6H-silicon carbide Tyaginov, S., s e e Asli, N. Tyagulski, I., s e e Lysenko, V.
253-256 79- 82 265-268
Uchiyama, T., s e e Kaneta, C. Uda, T., s e e Kaneta, C. Ueda, Y., s e e Fuyuki, T. Uren, M., s e e Spillane, M. Uren, M., s e e Anthony, C.
117-120 117-120 35- 38 155-158 249-252
Vanhellemont, J., s e e Lambert, U. Vanheusden, K., s e e Girault, V. Vanheusden, K., D. Fleetwood, R. Devine and W. Warren, Reactions and diffusion during annealing-induced H + generation in SOI buried oxides Vasi, J., s e e Mahapatra, S. Vasi, J., s e e Rao, V.R. Verhaar, R., s e e Tao, G. Vexler, M., s e e Asli, N. Vincent, E., s e e Bravaix, A. Vizoso, J,, F, Martin, X. Martfnez, M. Garriga and X. Aymerich, Growth of Si nuclei on SiO 2 for quantum dot memory applications Vogel, E., s e e Shanware, A. von Bardeleben, H., s e e Hugonnard-Bruy~re, E. yon Botany, J., K.-H. Heinig, R. Grrtzschel, M. Klimenkov, M. Strobel, K.-H. Stegemann and H.-J. Thees, Ion beam synthesis of narrow Ge nanocluster bands in thin SiO 2 films yon Czarnowski, A., s e e Fitting, H.-J. Vos, R., s e e Mertens, P.
127-130 167-170
231.-234 427-430 199-206
Wahlich, R., s e e Lambert, U. Warren, W., s e e Girault, V. Warren, W., s e e Vanheusden, K. Weidinger, A., s e e Maser, K. Weinrich, V., s e e Beitel, G. Weir, B., s e e Green, M. Wendt, H., s e e Beitel, G.
127-130 167-170 363-366 139-142 299-302 25- 30 299-302
303-306 75- 78 25- 30 71- 74
363-366 193-196 223-226 419-422 79- 82 163-166 431-434 295-298 277-280
Author Index Volume 48
447
Wiedenhofer, A., s e e Treu, M. Woerlee, P., s e e Houtsma, V. Wong, H., s e e Morokov, Y. W o o , J . , s e e Mahapatra, S. Wortman, J., s e e Shanware, A. Wortman, J., s e e Masson, P. Wortman, J., s e e Shanware, A. Wu, Y., s e e Yang, H.
253-256 415-418 175-178 193-196 39- 42 211-214 295-298 307-310
Yamasaki, T., s e e Kaneta, C. Yang, H., H. Niimi, Y. Wu, G. Lucovsky, J. Keister and J. Rowe, The effect of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics Yasuda, N., s e e Lu, H. Yeh, B., J. Liu and M. Chiang, Characteristics of novel polysilicon oxide by anodic oxidation Yuwono, B., T. Schloesser, A. Gschwandtner, G. Innertsberger, A. Grassl, A. Olbrich and W. Krautschneider, Reliability of ultrathin oxide and nitride films in the 1 nm to 2 nm range
117-120
Zabel, T.,
Gusev, E. Kar, S. Zhang, J., s e e Sii, H. Zhang, J.-Y., s e e Mooney, M. Zimmermann, H., s e e Asli, N. Zvanut, M., s e e Macfarlane, P. Zvanut, M., W. Chun and R. Stahlbush, The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films see
Zaumseil, P.,
see
307-310 287-290 235-238
51- 54 67- 70 83- 86 135-138 283-286 79- 82 269-272 347-350
Microelectronic Engineering 48 (1999) 435-447
i!
www.elsevier.nl/ locate/mee
Author Index Volume 48 Abstreiter, G . , s e e Deutschmann, R. Aeker, A., s e e Shanware, A. Afanas'ev, V., s e e Stesmans, A. Afanas'ev, V., s e e Stesmans, A. Afanas'ev, V,, s e e Mrstik, B. Afanas'ev, V., Electronic properties of SiO2/SiC interfaces Afanas'ev, V., s e e Bassler, M. Albohn, J., W. Ffissel, N. Sinh, K. Kliefoth, H. Flietner and W. Fuhs, Two types of traps at the Si/SiO 2 interface characterized by their cross sections Alers, G., s e e Lu, H. Anthony, C. and M. Uren, Effect of post oxidation processing on dry oxides on n-type 4H-SiC Antonova, I., V. Popov, V. Stas, A. Gutakovskii, A. Plotnikov and V. Obodnikov, Splitting and electrical properties of the SO1 structure formed from the heavily boron doped silicon with using of the smart-cut technology Asli, N., S. Gastev, I. Grekhov, P. Seegebrecht, A. Shulekin, S. Tyaginov, M. Vexler and H. Zimmermann, A1/SiOz(2.0-2.5 nm)/p-Si tunnel junction as a light emitter Autran, J., s e e Masson, P. Aymerich, X., s e e Miranda, E. Aymerich, X,, s e e Vizoso, J.
367-370 39- 42 113-116 131-134 143-146 241-248 257-260
Badri, M. and B. Majkusiak, Theory of the MOS/SOI tunnel diode Balk, P., 40 years MOS technology- from empiricism to science Ballutaud, D., A. Boutry-Forveille and A. Nazarov, Hydrogen thermal stability in buried oxides of SO1 structures Balucani, M., s e e Dobrovolsky, V. Barchuk, L, s e e Nazarov, A. Barrels, To, s e e Fitting, H.-J. Bassler, M., V. Afanas'ev, G. Pensl and M. Schulz, Degradation of 6H-SiC MOS capacitors operated at high temperatures Bauer, A., M. Beichele, M. Herden and H. Ryssel, Reliability of ultrathin gate oxides grown in low-pressure N20 ambient or on nitrogen-implanted silicon Bauza, D., s e e Maneglia, Y. Bearda, T., s e e Mertens, P.
375-378 3- 6
Elsevier Science B.V. PII: S 0 1 6 7 - 9 3 1 7 ( 9 8 ) 0 0 4 4 1 - 4
159-162 287-290 249-252
383-386
79- 82 211-214 171-174 431-434
359-362 343-346 379-382 427-430 257-260 59- 62 189-192
436
Author Index Volume 48
199-206 139-142 283-286 59- 62
Beck, U., s e e Maser, K. Beeehinol., J., s e e Mooney, M. Beiehele, M., s e e Bauer, A. Beitel, G., H. Wendt, E. Fritsch, V. Weinrich, M. Engelhardt, B. Hasler, T. R6hr, R. Bergmann, U. Scheler, K.-H. Malek, N. Nagel, A. Gschwandtner, W. Pamler, W. H6nlein, C. Dehm and C. Mazur6, A novel low-temperature (Ba, Sr)TiO3(BST) process with Ti/TiN barrier for Gbit DRAM applications Bergmann, R., s e e Beitel, G. Billon, T., s e e Simon, L. Blaekstone, S., Recent advances in wafer bonding of silicon and alternative materials Bonafos, C., s e e Garrido, B. Boutry-Fol'veille, A., s e e Ballutaud, D. Boyd, I., s e e Mooney, M. Bracale, A., s e e Ferlet-Cavrois, V. Bl'avaix, A., D. Goguenheim, N. Revil and E. Vincent, Turn-around effects during dynamic operation in 0.25 p,m CMOS technology Brubaker, M., s e e Roman, P. Briieidlneier, E., A. Kux, R. Kakoschke and H. Palm, Charge trapping in ONO interpoly dielectric of FLOTOX EEPROM cells Brunnel., K., s e e Deutschmann, R. Buchanan, D., s e e Gusev, E.
411-414 367-370 67- 70
Cantin, J., s e e Hugonnard-Bruy~re, E. Chang, J., s e e Lu, H. Cheng, B., s e e Mahapatra, S. Chiang, M., s e e Yeh, B. Chovet, A., s e e Ionescu, A. Chun, W., s e e Zvanut, M. Claeys, C., s e e Lukyanchikova, N. Clarke, J., s e e Riley, L. Colinge, J.-P., s e e Nazarov, A. Ciip, R., s e e Tao, G. Copel, M., s e e Gusev, E. Col'nelissen, I., s e e Mertens, P. Ci'ean, G., s e e Mooney, M. Cristoloveanu, S., s e e Ernst, T. Cl.istoloveanu, S., s e e Munteanu, D. Cuadl.as, A., s e e Garrido, B.
277-280 287-290 193-196 235-238 371-374 347-350 185-188 227-230 379-382 419-422 67- 70 199-206 283-286 339-342 355-358 207-210
Davis, R., s e e Therrien, R. de Bokx, P., s e e Houssa, M. De Gendt, S., s e e Houssa, M. De Gendt, S., s e e Mertens, P.
303-306 43- 46 43- 46 199-206
299-302 299-302 261-264 313-318 207-210 359-362 283-286 351-354 163-166 181-184
A u t h o r I n d e x Volume 4 8
Degraeve, R., s e e Kaczer, B. Degraeve, R., s e e Sii, H. Dehm, C., s e e Beitel, G. Deutsehmann, R., M. Huber, R. Neumann, K. Brunner and G. Abstreiter, Direct sub-lxm lateral patterning of SOI by focused laser beam induced oxidation Devine, R., s e e Girault, V. Devine, R., s e e Vanheusden, K. DiCioccio, L., s e e Hugonnard-Bruy~re, E. Dijsktra, J., s e e Tao, G. DiMaria, D., s e e Stathis, J.
437 47- 50 135-138 299-302 367-370 167-170 363-366 277-280 419-422 395-401
Dittrich, T., V. Timoshenko, M. Schwartzkopff, E. Hartmann, J. Rappich, P. Kashkarov and F. Koch, Effect of local surface structure on electronic properties of hydrogenated silicon surfaces Dobrovolsky, V,, L. Ishchuk, G. Ninidze, M. Balucani and A. Ferrani, Highamplitude and high-frequency oscillations of temperature and current in SOI structures Du Port de Pontcharra, J., s e e Pelloie, J.-L.
75- 78
343-346 327-334
Eeeleston, W., The effects of polysilicon grain boundaries on MOS based devices Eeker, K., s e e Maser, K. Eisele, I., s e e Rao, V.R. Engelhardt, M., s e e Beitel, G. Ermolieff, A., s e e Simon, L. Ernst, T., D. Munteanu, S. Cristoloveanu, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi and K. Murase, Investigation of SOI MOSFETs with ultimate thickness Evans, A., s e e Riley, L.
105-108 139-142 223-226 299-302 261-264
Faynot, O.,
327-334 351-354
s e e Pelloie, J.-L. Faynot, O., s e e Ferlet-Cavrois, V. Ferlet-Cavrois, V., A. Bracale, C. Marcandella, O. Musseau, J. Pelloie, C. Raynaud and O. Faynot, Designing MOS/SOI transistors for high-frequency and low-voltage applications Fernandez, J., s e e Riley, L. Ferrani, A., s e e Dobrovolsky, V. Fitting, H.-J., E. Schreiber, T. Barfels and A. yon Czarnowski, Degradation and breakdown of SiO2-1ayers due to hot and ballistic electron transport Fleetwood, D., s e e Vanheusden, K. Flietner, H., s e e Albohn, J. Fonseea, L., s e e Garrido, B. Franz, M., s e e Garrido, B. Friedriehs, P., s e e Treu, M. Fritseh, E., s e e Beitel, G. Fuhs, W., s e e Albohn, J. Fiissel, W., s e e Albohn, J.
339-342 227-230
351-354 227-230 343-346 427-430 363-366 159-162 207-210 207-210 253-256 299-302 159-162 159-162
438
Author Index Volume 48
Futatsuyama, T., s e e Fuyuki, T. Fuyuld, T., T. Futatsuyama, Y. Ueda, K. Moriizumi and H. Matsunami, Novel mechanisms in nm-thick gate SiO 2 growth at low temperatures utilizing activated oxygen
35- 38
35- 38 227-230 185-188 287-290
Gallas, B., s e e Riley, L. Garbar, N., s e e Lukyanchikova, N. Garfunkel, E., s e e Lu, H. Garrido, B., A. Cuadras, C. Bonafos, J. Morante, L. Fonseca, M. Franz and K. Pressel, Thermal dry oxidation of Sil _x_yGexCy strained layers grown on silicon Garriga, M., s e e Vizoso, J. Gastev, S., s e e Asli, N. Gehrke, T., s e e Therrien, R. Gelpey, J., s e e Song, S. Ghetti, A., E. Sangiorgi, T. Sorsch and I. Kizilyalli, The role of native traps on the tunneling characteristics of ultrathin (1.5-3 nm) oxides Ghidini, G., s e e Spinelli, A. Girauit, V., R. Devine, W. Warren and K. Vanheusden, A study of proton generation in Si / SiO 2/ Si structures Goguenheim, D., s e e Bravaix, A. Gomeniuk, Y., s e e Lysenko, V. Grabmeier, J., s e e Lambert, U. GraboUa, T., s e e Rao, V.R. Grambole, D., s e e Maser, K. Grassl, A., s e e Yuwono, B. Green, M., T. Sorsch, G. Timp, D. Muller, B. Weir, P. Silverman, S. Moccio and Y. Kim, Understanding the limits of ultrathin SiO/ and Si-O-N gate dielectrics for sub-50 nm CMOS Grekhov, I., s e e Asli, N. Gritsenko, V., s e e Morokov, Y. Groeseneken, G., s e e Kaczer, B. Groeseneken, G., s e e Sii, H. Griitzschel, R., s e e Maser, K. Griitzschel, R., s e e von Borany, J. Grouillet, A., s e e Pelloie, J.-L. Gsehwandtner, A., s e e Yuwono, B. Gsehwandtner, A., s e e Beitel, G. Gusev, E., D. Buchanan, P. Jamison, T. Zabel and M. Copel, Ultrathin nitrided gate dielectrics by plasma-assisted processing Gustafsson, T., s e e Lu, H. Gutakovskii, A., s e e Antonova, I.
67- 70 287-290 383-386
Hall, S., s e e Riley, L. Hanseh, W., s e e Rao, V.R.
227-230 223-226
207-210 431-434 79- 82 303-306 55- 58 31- 34 151-154 167-170 163-166 265-268 127-130 223-226 139-142 51- 54
25- 30 79- 82 175-178 47- 50 135-138 139-142 231-234 327-334 51- 54 299-302
Author Index Volume 48
Harris, J.,
Riley, L. s e e Dittrich, T. Hasler, B., s e e Beitel, G. Hattori, T., H. Nohira and K. Takahashi, The initial growth steps of ultrathin gate oxides Hauser, J., s e e Shanware, A. Hauser, J., s e e Shanware, A. Heinig, K.-H., s e e yon Botany, J. Henson, K., s e e Shanware, A. Henson, K., s e e Shanware, A. Herden, M., s e e Bauer, A. Herrmann, F., s e e Maser, K. Heyns, M., s e e Houssa, M. Heyns, M., s e e Mertens, P. Itirose, M., s e e Miyazaki, S. Holleman, J., s e e Houtsma, V. Hiinlein, W., s e e Beitel, G. Horiguchi, S., s e e Ernst, T. Houssa, M., S. De Gendt, P. de Bokx, P. Mertens and M. Heyns, X-ray irradiation effect on the reliability of ultrathin gate oxides and oxynitrides Houssa, M., s e e Mertens, P. Houtsma, V., J. Holleman, C. Salm and P. Woerlee, SILC in MOS capacitors with poly-Si and poly-Si07Ge03 gate material Huber, A., s e e Lambert, U. Huber, M., s e e Deutschmann, R. Hughes, H.L., s e e Rebohle, L. Hugonnard-Bruy~re, E., J. Cantin, H. von Bardeleben, F. Letertre, L. DiCioccio and T. Ouisse, Defect studies in epitaxial SiC-6H layers on insulator (SiCOI) Humphrey, J., s e e Riley, L. Hurley, P., s e e Mooney, M. see
Hartmann, E.,
Ielmini, D.,
Spinelli, A. s e e Yuwono, B. Innertsberger, G., s e e Kerber, M. Ionescu, A. and A. Chovet, Sub-band-gap impact ionization events in transient regimes of floating body SOI devices Irrera, F. and F. Russo, Off-stochiometric silicon oxides for applications in lowvoltage flash memories Ishchuk, L., s e e Dobrovolsky, V. Itoh, H., M. Nagamine, H. Satake and A. Toriumi, A study of atomically flat SiO2/Si interface formation mechanism based on the radical oxidation kinetics Iwai, H., Outlook of MOS devices into the next century see
Innertsberger, G.,
Jamison, P., s e e Gusev, E. Jeynes, C., s e e Riley, L.
439
227-230 75- 78 299-302 17- 24 39- 42 295-298 231-234 39- 42 295-298 59- 62 139-142 43- 46 199-206 63- 66 415-418 299-302 339-342 43- 46 199-206 415-418 127-130 367-370 335-338 277-280 227-230 283-286 151-154 51- 54 147-150 371-374 423-426 343-346 71- 74 7- 14 67- 70 227-230
440
Jimenez, C.,
Author Index Volume 48
see
Mooney, M.
Kaezer, B., R. Degraeve, N. Pangon, T. Nigam and G. Groeseneken, Investigation of temperature acceleration of thin oxide time-to-breakdown Kakosehke, R., s e e Briicklmeier, E. Kamieniecki, E., s e e Roman, P. Kanebako, K., s e e Matsukawa, N. Kaneta, C., T. Yamasaki, T. Uchiyama, T. Uda and K. Terakura, Structure and electronic property of S i(100)/SiO 2 interface Kar, S. and P. Zaumseil, Characteristics of ultrathin (4-7 nm) gate oxides for SiGe quantum well MOS structures Karna, S. and H. Kurtz, Quantum mechanical characterization of E'-type centers in a-SiO x films Kashkarov, P., s e e Dittrich, T. Keister, J., s e e Yang, H. Kelly, P., s e e Mooney, M. Kenis, K., s e e Mertens, P. Kerber, M., U. Schwalke and G. Innertsberger, Evidence for spatial distribution of traps in MOS systems after Fowler Nordheim stress K i m , Y . , s e e Green, M. Kissinger, G., s e e Lambert, U. Kizilyalli, I., s e e Ghetti, A. Kliefoth, K., s e e Albohn, J. Klimenkov, M., s e e yon Botany, J. Koch, F., s e e Dittrich, T. Koch, F., s e e Lii, J. Kohno, A., s e e Miyazaki, S. Krauser, J., s e e Maser, K. Krautschneider, W., s e e Yuwono, B. Kubler, L., s e e Simon, L. Kuper, F., s e e Tao, G. Kurtz, H., s e e Karna, S. Kux, A., s e e Briicklmeier, E. Kwong, D., s e e Song, S. Lacaita, A., s e e Spinelli, A. Lacaita, A. and L. Perron, Physics and characterization of transient effects in SOI transistors Lambert, U., A. Huber, J. Grabmeier, G. Obermeier, J. Vanhellemont, R. Wahlich and G. Kissinger, Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon L e e , C . , s e e Song, S. Lee, D.-O., s e e Roman, E Lee, S., s e e Song, S. Leihkauf, R., s e e Maser, K.
283-286 47- 50 411-414 181-184 121-124 117-120 83- 86 109-112 75- 78 307-310 283-286 199-206 147-150 25- 30 127-130 31- 34 159-162 231-234 75- 78 95- 99 63- 66 139-142 51- 54 261-264 419-422 109-112 411-414 55- 58 151-154 319-326
127-130 55- 58 181-184 55- 58 139-142
Author Index Volume 48
Letertre, F.,
s e e Hugonnard-Bruy~re, E. Li, V., s e e Shanware, A. Liu, J., s e e Yeh, B. Loewenstein, L., s e e Mertens, P. Lu, It., N. Yasuda, E. Garfunkel, T. Gustafsson, J. Chang, R. Opila and G. Alers, Structural properties of thin films of high dielectric constant materials on silicon Lii, J. and F. Koch, Polar phonon scattering at the Si-SiO 2 interface Luan, H., s e e Song, S. Lucovsky, G. and J. Phillips, The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-k gate dielectrics into aggressively-scaled CMOS Si devices Lucovsky, G., s e e Therrien, R. Lucovsky, G., s e e Yang, H. Lukyanchikova, N., M. Petrichuk, N. Garbar, E. Simoen and C. Claeys, RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions Lundgren, E, s e e Ragnarsson, L.-A. Lysenko, V., I. Tyagulski, Y. Gomeniuk, I. Osiyuk and A. Mikhnov, Electrical characterization of the amorphous SiC-pSi structure Lysenko, V., s e e Nazarov, A. o
441
277-280 39- 42 235-238 199-206 287-290 95- 99 55- 58
291-294 303-306 307-310
185-188 219-222 265-268 379-382
Macfarlane, P. and M. Zvanut, Dangling bond defects in SiC: The dependence on oxidation time
269-272
Mahapatra, S., V. Ramgopal Rao, C. Parikh, J. Vasi, B. Cheng and J. Woo, A study of 100 nm channel length asymmetric channel MOSFETs by using charge pumping
Mahapatra, S., s e e Rao, V.R. Majkusiak, B., s e e Badri, M. Malek, K.-H., s e e Beitel, G. Maneglia, Y. and D. Bauza, On the origin of Flicker noise in MOSFETs Mao, A.,
Song, S. Marcandella, C,, s e e Ferlet-Cavrois, V. Marcus, S., s e e Song, S. Martin, F., s e e Vizoso, J. Martinez, X., s e e Vizoso, J. Maruyama, T., s e e Miyazaki, S. Maser, K., U. Mohr, R. Leihkauf, K, Ecker, U. Beck, D. Grambole, R. Gr6tzschel, F. Herrmann, J. Krauser and A. Weidinger, Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose 15N ion beam irradiation ' Masson, P., P. Morfouli, J. Autran and J. Wortman, Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by low-pressure rapid thermal chemical vapor deposition Massoud, H., s e e Shanware, A. see
193-196 223-226 375-378 299-302 189-192 55- 58 351-354 55- 58 431-434 431-434 63- 66
139-142
211-214 39- 42
442
Author Index Volume 48
Shiely, J. Shanware, A. Mastrapasqua, M., Low voltage flash memory by use of substrate bias Matsukawa, N. and K. Kanebako, A new model for TDDB lifetime distribution of
101-104 295-298 389-394
SiO2 Matsunami, H., s e e Fuyuki, T. Mazur6, C., s e e Beitel, G. McMarr, P., s e e Mrstik, B. Mertens, E, s e e Houssa, M. Mertens, P., T. Bearda, M. Houssa, L. Loewenstein, I. Cornelissen, S. De Gendt,
121-124 35- 38 299-302 143-146 43- 46
Massoud, H., Massoud, H.,
see
see
K. Kenis, I. Teerlinck, R. Vos, M. Meuris and M. Heyns, Advanced cleaning for the growth of ultrathin gate oxide Meuris, M., s e e Mertens, P. Mikhnov, A., s e e Lysenko, V. Mirabedini, M., s e e Shanware, A. Miranda, E., J. Sufi6, R. Rodrfguez, M. Nafrfa and X. Aymerich, A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction Miyazaki, S., T. Maruyama, A. Kohno and M. Hirose, Photoelectron yield spectroscopy of electronic states at ultrathin SiO2/Si interfaces Moccio, S., s e e Green, M. Modelli, A., Reliability of thin dielectric for non-volatile applications Mohr, U., s e e Maser, K. Mooney, M., E Hurley, B. O'Sullivan, J. Beechinor, J.-Y. Zhang, I. Boyd, E Kelly, J.-E Sgnateur, G. Crean, C. Jimenez and M. Paillous, Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source Morante, J,, s e e Garrido, B. Morfouli, P., s e e Masson, P. Moriizumi, K., s e e Fuyuki, T. Morokov, Y., Y. Novikov, V. Gritsenko and H. Wong, Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric Mrstik, B., V. Afanas'ev, A. Stesmans and P. McMarr, Relationship between hole trapping and oxide density in thermally grown SiO 2 Muller, D., s e e Green, M. Munteanu, D., s e e Ernst, T. Munteanu, D. and S. Cristoloveanu, Model for the extraction of the recombination lifetime in partially depleted SOI MOSFETs Murase, K., s e e Ernst, T. Murray, R., s e e Riley, L. Musseau, O., s e e Ferlet-Cavrois, V.
355-358 339-342 227-230 351-354
Nafria, M.,
171-174
see
Miranda, E.
199-206 199-206 265-268 39- 42
171-174 63- 66 25- 30 403-410 139-142
283-286 207-210 211-214 35- 38
175-178 143-146 25- 30 339-342
A u t h o r Index Volume 48
443
Nagamine, M., s e e Itoh, H. Nagel, N., s e e Beitel, G. Nazarov, A . , s e e Ballutaud, D. Nazarov, A., I. Barchuk, V. Lysenko and J.-P. Colinge, Association of hightemperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide Neumann, R., s e e Deutschmann, R. Nigam, T., s e e Kaczer, B. Niimi, I-l., s e e Therrien, R. Niimi, H., s e e Yang, H. Ninidze, G., s e e Dobrovolsky, V. Nohira, H., s e e Hattori, T. Novikov, Y., s e e Morokov, Y.
379-382 367-370 47- 50 303-306 307-310 343-346 17- 24 175-178
Obermeier, G., s e e Lambert, U. Obodnikov, V., s e e Antonova, I. Olbrieh, A., s e e Yuwono, B. Ono, Y., s e e Ernst, T. Opila, R., s e e Lu, H. Osiyuk, I., s e e Lysenko, V. Ouisse, T., s e e Hugonnard-Bruy~re, E. Oulsse, T., s e e Ernst, T. O'Sullivan, B., s e e Mooney, M.
127-130 383-386 51- 54 339-342 287-290 265-268 277-280 339-342 283-286
Paillous, M., s e e Mooney, M. Palm, H., s e e Briicklmeier, E. Pander, W., s e e Beitel, G. Pangon, N., s e e Kaczer, B. Parilda, C., s e e Mahapatra, S. Pasquarello, A., Network transformation processes during oxidation of silicon Pelloie, J., s e e Ferlet-Cavrois, V. Pelloie, J.-L., C. Raynaud, O. Faynot, A. Grouillet and J. Du Port de Pontcharra, CMOS/SOI technologies for low-power and low-voltage circuits Pensl, G., s e e Bassler, M. Perron, L., s e e Lacaita, A. Petriehuk, M., s e e Lukyanchikova, N. Phillips, J., s e e Lucovsky, G. Plotnikov, A., s e e Antonova, I. Popov, V., s e e Antonova, I. Pressel, K., s e e Garrido, B.
283-286 411-414 299-302 47- 50 193-196 89- 94 351-354
Ragnarsson, L.-/~. and P. Lundgren, Surface potential influence on defect passivation kinetics probed by chromium gated metal-oxide-silicon devices Ramgopal Rao, V., s e e Mahapatra, S. Rao, V.R., W. Hansch, S. Mahapatra, D. Sharma, J. Vasi, T. Grabolla and I. Eisele, Low temperature-high-pressure grown thin gate dielectrics for MOS applications
71- 74 299-302 359-362
327-334 257-260 319-326 185-188 291-294 383-386 383-386 207-210 219-222 193-196 223-226
444
Author Index Volume 48
Rappieh, J., s e e Dittrich, T. Raynaud, C., s e e Pelloie, J.-L. Raynaud, C., s e e Ferlet-Cavrois, V. Rebohle, L., A.G. Revesz, W. Skorupa and H.L. Hughes, Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions Revesz, A.G., s e e Rebohle, L. Revil, N., s e e Bravaix, A. Rigamonti, M., s e e Spinelli, A. Riley, L., S. Hall, J. Harris, J. Fernandez, B. Gallas, A. Evans, J. Clarke, J. Humphrey, R. Murray and C. Jeynes, SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation Rodriguez, R., s e e Miranda, E. Riihr, T., s e e Beitel, G. Roman, P., D.-O. Lee, M. Brubaker, E. Kamieniecki and J. Ruzyllo, Characterization of conductive oxides on silicon using non-contact surface charge profiling Rowe, J., s e e Yang, H. Rudenko, T., E. Sveinbj6rnsson and M. Sadeghi, A simple method for the evaluation of the recombination parameters in SiC MOS structures Rupp, R., s e e Treu, M. Russo, F., s e e Irrera, F. Ruzyllo, J., s e e Roman, E Ryssel, H., s e e Bauer, A. Ryssel, H., s e e Treu, M.
75- 78 327-334 351-354
Sadeghi, M., s e e Rudenko, T. Salm, C., s e e Houtsma, V. Sangiorgi, E., s e e Ghetti, A. Satake, H., s e e Itoh, H. Seheler, U., s e e Beitel, G. Sehioesser, T., s e e Yuwono, B. Sehiirner, R., s e e Treu, M. Sehreiber, E., s e e Fitting, H.-J. Sehuiz, M., s e e Bassler, M. Sehwalke, U., s e e Kerber, M. Sehwartzkopff, M., s e e Dittrich, T. Seegebrecht, E, s e e Asli, N. S~nateur, J.-P., s e e Mooney, M. Shanware, A., H. Massoud, A. Acker, V. Li, M. Mirabedini, K. Henson, J. Hauser and J. Wortman, The effects of Ge content in poly-Si l_xGe x gate material on the tunneling barrier in PMOS devices Shanware, A., H. Massoud, E. Vogel, K. Henson, J. Hauser and J. Wortman, Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO 2 and SiOz/TazO 5 dielectrics with oxide scaling
273-276 415-418 31- 34 71- 74 299-302 51- 54 253-256 427-430 257-260 147-150 75- 78 79- 82 283-286
335-338 335-338 163-166 151-154
227-230 171-174 299-302
181-184 307-310 273-276 253-256 423-426 181-184 59- 62 253-256
39- 42
295-298
A u t h o r Index Volume 48
445
Sharma, D., s e e Rao, V.R. Shiely, J. and H. Massoud, Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling Shulekin, A., s e e Asli, N. Sii, H., J. Zhang, R. Degraeve and G. Groeseneken, Relation between hydrogen and the generation of interface state precursors Siiverman, P., s e e Green, M. Simoen, E., s e e Lukyanchikova, N. Simon, L., L. Kubler, A. Ermolieff and T. Billon, Oxidation of 6H-SiC (0001) Sinh, N., s e e Albohn, J. Skorupa, W., s e e Rebohle, L. Song, S., H. Luan, C. Lee, A. Mao, S. Lee, J. Gelpey, S. Marcus and D. Kwong, Ultrathin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N20 oxidation of NH3-nitrided Si Sorsch, T., s e e Green, M. Sorsch, T., s e e Ghetti, A. Spiilane, M., S. Taylor and M. Uren, Validation of the voltage step technique for determination of slow state density in MOS gate oxides Spinelli, A., A. Lacaita, M. Rigamonti, D. Ielmini and G. Ghidini, Separation of electron and hole traps by transient current analysis Stahlbush, R., The effects of radiation-induced defects on H ÷ transport in SiO 2 Stahlbush, R., s e e Zvanut, M. Stas, V., s e e Antonova, I. Stathis, J. and D. DiMaria, Oxide scaling limit for future logic and memory technology Stegemann, K.-H., s e e von Borany, J. Stephani, D., s e e Treu, M. Stesmans, A. and V. Afanas'ev, Nature of the PbJ interface defect in (100)Si/SiO 2 as revealed by electron spin resonance 295i hyperfine structure Stesmans, A. and V. Afanas'ev, Suppression of thermal degradation in standard S i / S i O z by noble gases Stesmans, A., s e e Mrstik, B. Strobel, M., s e e von Borany, J. SurlY, J., s e e Miranda, E. SveinbjiJrnsson, E., s e e Rudenko, T.
223-226
Takahashi, K . , s e e Hattori, T. Takahashi, Y., s e e Ernst, T. Tao, G., R. C6p, J. Dijsktra, F. Kuper and R. Verhaar, The impact of SILC to data retention in sub-half-micron embedded EEPROMs Taylor, S., s e e Spillane, M. Teerlinck, I., s e e Mertens, P. Terakura, K., s e e Kaneta, C. Thees, H.-J., s e e von Borany, J.
17- 24 339-342
101-104 79- 82 135-138 25- 30 185-188 261-264 159-162 335-338
55- 58 25- 30 31- 34 155-158 151-154 215-218 347-350 383-386 395-401 231-234 253-256 113-116 131-134 143-146 231-234 171-174 273-276
419-422 155-158 199-206 117-120 231-234
446
A u t h o r I n d e x Volume 4 8
Therrien, R., H. Niimi, T. Gehrke, G. Lucovsky and R. Davis, Charge redistribution at GaN-GazO 3 Interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces Timoshenko, V., s e e Dittrich, T. Timp, G., s e e Green, M. Torinmi, A., s e e Itoh, H. Treu, M., R. Schrrner, P. Friedrichs, R. Rupp, A. Wiedenhofer, D. Stephani and H. Ryssel, Reliability of metal-oxide-semiconductor capacitors on 6H-silicon carbide Tyaginov, S., s e e Asli, N. Tyagulski, I., s e e Lysenko, V.
253-256 79- 82 265-268
Uchiyama, T., s e e Kaneta, C. Uda, T., s e e Kaneta, C. Ueda, Y., s e e Fuyuki, T. Uren, M., s e e Spillane, M. Uren, M., s e e Anthony, C.
117-120 117-120 35- 38 155-158 249-252
Vanhellemont, J., s e e Lambert, U. Vanheusden, K., s e e Girault, V. Vanheusden, K., D. Fleetwood, R. Devine and W. Warren, Reactions and diffusion during annealing-induced H + generation in SOI buried oxides Vasi, J., s e e Mahapatra, S. Vasi, J., s e e Rao, V.R. Verhaar, R., s e e Tao, G. Vexler, M., s e e Asli, N. Vincent, E., s e e Bravaix, A. Vizoso, J,, F, Martin, X. Martfnez, M. Garriga and X. Aymerich, Growth of Si nuclei on SiO 2 for quantum dot memory applications Vogel, E., s e e Shanware, A. von Bardeleben, H., s e e Hugonnard-Bruy~re, E. yon Botany, J., K.-H. Heinig, R. Grrtzschel, M. Klimenkov, M. Strobel, K.-H. Stegemann and H.-J. Thees, Ion beam synthesis of narrow Ge nanocluster bands in thin SiO 2 films yon Czarnowski, A., s e e Fitting, H.-J. Vos, R., s e e Mertens, P.
127-130 167-170
231.-234 427-430 199-206
Wahlich, R., s e e Lambert, U. Warren, W., s e e Girault, V. Warren, W., s e e Vanheusden, K. Weidinger, A., s e e Maser, K. Weinrich, V., s e e Beitel, G. Weir, B., s e e Green, M. Wendt, H., s e e Beitel, G.
127-130 167-170 363-366 139-142 299-302 25- 30 299-302
303-306 75- 78 25- 30 71- 74
363-366 193-196 223-226 419-422 79- 82 163-166 431-434 295-298 277-280
Author Index Volume 48
447
Wiedenhofer, A., s e e Treu, M. Woerlee, P., s e e Houtsma, V. Wong, H., s e e Morokov, Y. W o o , J . , s e e Mahapatra, S. Wortman, J., s e e Shanware, A. Wortman, J., s e e Masson, P. Wortman, J., s e e Shanware, A. Wu, Y., s e e Yang, H.
253-256 415-418 175-178 193-196 39- 42 211-214 295-298 307-310
Yamasaki, T., s e e Kaneta, C. Yang, H., H. Niimi, Y. Wu, G. Lucovsky, J. Keister and J. Rowe, The effect of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics Yasuda, N., s e e Lu, H. Yeh, B., J. Liu and M. Chiang, Characteristics of novel polysilicon oxide by anodic oxidation Yuwono, B., T. Schloesser, A. Gschwandtner, G. Innertsberger, A. Grassl, A. Olbrich and W. Krautschneider, Reliability of ultrathin oxide and nitride films in the 1 nm to 2 nm range
117-120
Zabel, T.,
Gusev, E. Kar, S. Zhang, J., s e e Sii, H. Zhang, J.-Y., s e e Mooney, M. Zimmermann, H., s e e Asli, N. Zvanut, M., s e e Macfarlane, P. Zvanut, M., W. Chun and R. Stahlbush, The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films see
Zaumseil, P.,
see
307-310 287-290 235-238
51- 54 67- 70 83- 86 135-138 283-286 79- 82 269-272 347-350