Author index volume 5 (1986)

Microelectronic Engineering 5 (1986) 599-605 North-Holland

599

Author Index Volume 5 (1986) Ahmed, H., see G.A.C. Jones Ahmed, H., see D.F. Reich Akhtar, S., see I. Plotnik Alcouffe-Noailly, N., see M.E. Guillaume Amblard, G., see P. Paniez Anderer, B.A., and U.F.W. Behringer, Determination of the average stress and its adjustment in thin silicon membranes used in various lithographs Aristov, V.V., T.B. Borsenko, V.A. Kudryashov, A.A. Svintsov and S.I. Zaitsev, Investigation of structure profiles in negative resists

265 - 2 7 1 171 - 178 5 1 - 59 563 - 570 321 - 3 2 7

Babich, E., see N.J. Chou Babich, E., J. Shaw, M. Hatzakis, J. Paraszczak, D. Witman and B.J. Grenon, Diazopolysiloxanes: Unique imageable barrier layers Balakrishnan, S., see A.J. Steckl Barth, J.E., see K.D. van tier Mast B~iuerle, D., Laser-induced chemical processes at interfaces (Invited Paper, Abstract) Beaumont, S.P., see S. Thorns Beha, H., see H.K. Seitz Behringer, U.F.W., see B.A. Anderer Beneking, H., see P. Unger Betz, H., see W.H. Briinger Betz, H., see W. Windbracke Betz, H., H.-L. Huber, S. Pongratz, W. Rohrmoser, W. Windbracke and U. Mescheder, Silicon X-ray masks: Pattern placement and overlay accuracy Bijawat, S., see B. Fay Blacha, A., see H.K. Seitz Blythe, S., see G.A.C. Jones B6gli, V., see P. Unger

375 - 3 8 6

Bohlander, J.H., see H.N. Slingerland Borsenko, T.B., see V.V. Aristov Breton, B.C., J.T.L. Thong and W.C. Nixon, A dynamic real-time 3-D measurement technique for IC inspection Briinger, W.H., H. Betz, A. Heuberger and J. Hersener, Influence of thin film thickness variations on pattern fidelity of X-ray masks Brust, H.-D. and F. Fox, A high frequency logic-state tracing method Buchmann, P., V. Graf, TO. Mohr and P. Vettiger, High-temperaturestable Si3N 4 dummy T-gate and lift-off mask Buevoz, J.L., see M.E. Guillaume

0167-9317/86/$3.50 © 1986, Elsevier Science Publishers B.V. (North-Holland)

6"1- 71 3 2 9 - 334

2 9 9 - 313 4 6 1 - 462 115 - 122

249547 67 27961 73 -

433 256 553 71 286 65 80

41 - 49 587 - 595 547 - 5 5 3 265 - 271 2 7 9 - 286 155 - 161 329 - 334 5 4 1 - 545 61 - 65 5 3 1 - 540 395 - 4 0 1 563 - 570

600

Author Index

Buiguez, F., see F. Schue Burghause, H., see K.P. Miiller

315 - 319 481 - 489

Caro, J., E.W.J.M. van der Drift, K.L. Hagemans and S. Radelaar, Fabrication of grating gates for lateral surface superlattice devices using Ebeam lithography Chaug, Y.S., see N.J. Chou

273 - 277 375 - 3 8 6

Chou, N.J., J. Paraszczak, E. Babich, Y.S. Chaug and R. Goldblatt, Mechanism of microwave plasma etching of polyimides in 02 and GF 4 gas mixtures Chu, S.D., see A.J. Steckl

Clauberg, R., see H.K. Seitz Cleaver, J.R.A., see D.F. Reich Coane, P.J., P. Rudeck, L.K. Wang and EJo Hohn, Electron beam/optical mixed lithography at half-micron ground rules

375 179547 171 -

386 189 553 178

133 - 140

Coopmans, E, B. Roland and R. Lombaerts, Effects of silylation parameters on the lithographic performance of the desired system

Corelli, J.C., see A.J. Steckl Corelli, J.C., see A.J. Steckl Decoutere, S., see L. Stevens Delpech, P., see M. Pons Doemens, G., H. Eigenstetter and P. Mengel, Automatic mask alignment for X-ray microlithography

291 - 297 1 7 9 - 189 461 - 4 6 2 141 - 150 403 - 404 89-

96

D6ssel, K.-F., H.-L. Huber and H. Oertei, Highly-sensitive novolakbased positive X-ray resist

Drift, E.W.J.M. van der, see J. Caro Drift, E. van der, K. Kerkhof, J. Romijn and T.M. Klapwijk, Nanometerscale lithography for A h a r o n o v - B o h m magnetoconductance oscillation studies

Diirig, U., see O. Wolter Economou, N.P., see D.C. Shaver Ehm, H. and R. Laubmeier, Fully-automated optical inspection for VLSI production Ehrfeld, W., W. Glashauser, D. Miinchmeyer and W. Schelb, Mask making for synchrotron radiation lithography

Eigenstetter, H., see G. Doemens Elliott, D.J. and B.P. Piwczyk, Electronic materials surface processing with excimer lasers

Engeihardt, M., see I.W. Rangelow Evason, A.E, see D.F. Reich Fay, B., J. Labrie and S. Bijawat, A practical submicron lithography system using a conventional source X-ray stepper Fencil, C.R., Recent developments in X-ray lithography systems (Abstract) Fichtner, W., Submicron MOS devices Fischer, R., E. Hammel, H. L6schner, G. Stengl, P. Wolf, H. Kraus and G. Stangl, Ion projection lithography in (in)organic resist layers

Fox, F., see H.-D. Brust

97 - 104 273 - 277

2 5 7 - 263 477 191 555 - 562 463 - 470 8 9 - 96 435 - 444 3 8 7 - 394 171 - 178 587 - 595 597 2 1 9 - 238 193 - 200 531 - 540

Author Index

Fray, D.J., see D.F. Reich Frost, J., see S. Thoms Froyen, E., see L. Stevens Gamo, K., see Y. Yasuoka Gamo, K., D. Takehara, Y. Hamamura, M. Tomita and S. Namba, Maskless ion beam assisted deposition of W and Ta films Giral, L., see F. Schue Glashauser, W., see W. Ehrfeld Gobrecht, J. and J.B. Pethica, The potential of mechanical microlithography for submicron patterning Goldblatt, R., see N.J. Chou Goodall, F., R.A. Lawes and P.H. Sharp, Excimer lasers as deep UV sources for photolithographic system Graf, V., see P. Buchmann Grenon, B.J., see E. Babich Greschner, J., see O. Wolter Guillaume, M.E., N. Alcouffe-Noailly and J.L. Buevoz, Extension of the M.A.L.T. concept to thick layers with emphasis on focusing conditions

601 171 - 178 249-

256

141-

150

335 - 340 163 - 1 7 0 315 - 319 463 -470 471 - 475 375 - 386 445 - 452 395 - 401 299-

313 477

563 - 570

Hagemans, K.L., see J. Caro Hamamura, Y., see K. Gamo Hammel, E., see R. Fischer Harakawa, K., see Y. Yasuoka Haslam, M.E. and J.F. McDonald, An image fidelity approach to measuring the point spread function in electron and ion beam lithographies Hatzakis, M., see E. Babich Heidenreich, J.E., J.R. Paraszczak, M. Moisan and G. Sauve, Ion energy and anisotropy in microwave plasma etching of polymers Herrmann, K.D. and E. Kubalek, Some aspects concerning design for Ebeam testability Hersener, H., see W.H. Briinger Hersener, J. and G. L~issing, A MOSFET, manufactured with synchrotron X-ray lithography Heuberger, A., X-ray lithography (Invited Paper) Heuberger, A., see W.H. Briinger Hohn, F.J., see P.J. Coane Holil, B., see F. Schue Holly, S., see E.B. V/lzsonyi Hosoki, S., see N. Saitou Huber, H.-L., see H. Betz Huber, H.-L., see K.-E D6ssel Huber, H.-L., see W. Windbracke

273 - 277

Inard, A., see M. Pons

403 - 404

Jeugd, C.A. van der, see A.J.G. Schellingerhout Jin, H.-S., see A.J. Steckl Jonckheere, R., see L. Stevens Jones, G.A.~, S. Blythe and H. Ahmed, Direct fabrication of nanometer-scale structures in semiconductors with 5 0 0 k e V lithography

287 -288

163 - 1 7 0 193 - 2 0 0 335 - 340 491 -498 299-

313

363 - 374 515 -522 61 -

65

105 - 1 1 2 3 -

38

61 -

65

133 - 1 4 0 315 - 319 341 - 3 4 7 123 - 131 41 -

49

97 - 104 73 -

80

461 - 462 141-

150

2 6 5 - 271

Author Index

602

Kassing, R., see I.W. Rangelow Kerkhof, K., see E. van der Drift Klapwijk, T.M., see E. van der Drift Kluwe, A . a n d K . - H . M i i l l e r , S i m p l e m e t h o d

387 - 3 9 4 2 5 7 - 263 257 - 263 f o r t h e d e f e c t c o n t r o l in X -

ray mask fabrication

81 - 88 155 - 161

Koets, E., see H.N. Slingerland Koops, H., see J. OIschimke Koops, H., see V. Scheuer Kraus, H., see R. Fischer Kubalek, E., see K.D. Herrmann Kudryashov, V.A., see V.V. Aristov

405 - 412 423 - 4 3 0 193 - 2 0 0 515 - 5 2 2 3 2 9 - 334

Labrie, J., see B. Fay Lanneer, D., see L. Stevens L/issing, G., see J. Hersener Laubmeier, R., see H. Ehm Lawes, R.A., see F. Goodall Lin, C~-M., see A.J. Stecki Lischke, B., see R. Schmitt Lombaerts, R., see F. Coopmans L6schner, H., see R. Fischer Liithje, H., U. Mackens, U. Mescheder and B. Mathiessen, SiC-masks

for high resolution synchrotron

587 - 5 9 5 141 - 150 105 - 112 555 - 562 445 - 4 5 2 1 7 9 - 189 523 - 5 3 0 291 - 2 9 7 193 - 2 0 0

Stability of X-ray lithography (Ab39

stract)

Mackens, U., see H. Liithje Masseli, K., see I.W. Rangelow Mast, K.D. van der, see H.N. Slingerland Mast, K.D. van der, F.J. Pijper and J.E. Barth, A flexible beamshaper Mathiessen, B., see H. Liithje Matsuoka, G., see N. Saitou Matsuzaka, T., see N. Saitou McDonald, J.F., see M.E. Haslam Mengel, P., see G. Doemens Mescheder, U., see H. Betz Mescheder, U., see H. Liithje Moerl, L . , A r F l a s e r i n d u c e d l i f t - o f f p r o c e s s Mohr, TO., see P. Buchmann Moisan, M., see J.E. Heidenreich Montginoul, C., see F. Schue Mooij, J.E., see A.J.G. Schellingerhout Miiiler, K.-H., see A. Kiuwe Miiller, K.-H., Th. Stelter, F. Ponse and H. Weidlich, S y n c h r o t r o n l i t h o g r a p h y for s u b - h a l f - m i c r o n T-gates in G a A s - F E T Simulation of focused ion

39 3 8 7 - 394 155 - 161 115 - 122 39 123 - 131 123 - 131 491 - 4 9 8 89-

96

41 -

49 39

453 - 458 395 - 401 363 - 3 7 4 315 - 319 287 - 288 81 -

88

2 3 9 - 246

Miiller, K.P., U. Weigmann and H. Burghause, b e a m milling Miinchmeyer, D., see W. Ehrfeld

481 - 4 8 9 463 - 4 7 0

Namba, S., see K. Gamo Namba, S., see Y. Yasuoka Nixon, W.C., see B.C. Breton

163 - 170 335 - 3 4 0 541 - 545

603

Author Index

Oertel, H., see K.-F. D6ssel O h y a m a , M., see N. Saitou O k u m u r a , M., see N. Saitou Oischimke, J., H . K o o p s a n d T. Tschudi, Periodic S i - h o l e - m a s k s in the # m a n d s u b - ~ m range for e l e c t r o n - m u l t i b e a m w r i t i n g

Pang, S.W., R a d i a t i o n d a m a g e in d r y etching (Invited Paper) Paniez, P. a n d G. A m b l a r d , C o m m e r i c a l dyes for n o v o l a k b a s e d multilayer systems

Paraszczak, J., see E. Babich Paraszczak, J., see N.J. Chou Paraszczak, J., see J.E. Heidenreich Pethica, J.B., see J. Gobrecht Pijper, F.J., see K.D. van der Mast Pilz, W., see W. Windbracke Piwczyk, B.P., see D.J. Eiliott Plotnik, I., M.E. Porter, M. Toth, S. Akhtar and H.I. Smith, I o n i m p l a n t c o m p e n s a t i o n o f tensile stress in t u n g s t e n a b s o r b e r for low d i s t o r t i o n X-ray m a s k s Pongratz, S., see H . Betz

Pongratz, S., see W. Windbracke Pons, M., P. Delpech, A. Schiltz and A. Inard, M i n i - t r e n c h isolation: Trench etching, o x i d a t i o n a n d refilling p l a n a r i z a t i o n ( A b s t r a c t )

Ponse, F., see K . - H . Miiiler Porter, M.E., see I. Piotnik Prober, D.E., Q u a n t u m t r a n s p o r t in m i c r o s t r u c t u r e s (Invited Paper) Radelaar, S., see J. Caro Rangelow, I.W., P. Thoren, K. Masseli, R. Kassing, M. Engelhardt a n d S. Schwarzi, S e c o n d a r y effects o f single crystalline silicon d e e p - t r e n c h etching in a c h l o r i n e - c o n t a i n i n g p l a s m a o f 3 - d i m e n s i o n a l c a p a c i t o r cells

97 - 104 123 - 131 123 - 131 405 - 412 3 5 1 - 361 321 299375 363 471 115 73 435 -

327 313 386 374 475 122 80 444

514173-

59 49 80

403 - 404 2 3 9 - 246 5 1 - 59 203 - 216 273 - 277

387 - 394

Reich, D.F., D.J. Fray, A.F. Evason, J.R.A. Cleaver and H. Ahmed, Metallurgy and microfabrication applications of gold-silicon-beryllium l i q u i d - m e t a l field-ion sources Rohrmoser, W., see H . Betz

Roland, B., see F. Coopmans Romijn, J., see E. van der Drift Romijn, J., see A.J.G. Schellingerhout Rosilio, C., see F. Schue Rudeck, P., see P.J. Coane Sagnes, R., see F. Schue Saitou, N., S. Hosoki, M. Okumura, T. Matsuzaka, G. Matsuoka a n d M. O h y a m a , E l e c t r o n o p t i c a l c o l u m n for high speed n a n o m e t r i c lithography Salemink, H., S c a n n i n g t u n n e l i n g m i c r o s c o p y (Invited P a p e r ) Sauve, G., see J.E. Heidenreich ScheUingerhout, A.J.G., C.A. van der Jeugd, J. Romijn a n d J.E. Mooij, F a b r i c a t i o n o f l o w - c a p a c i t a n c e J o s e p h s o n - j u n c t i o n s (Abstract) Scheuer, V., H. K o o p s a n d T. Tschudi, E l e c t r o n b e a m d e c o m p o s i t i o n o f c a r b o n y l s o n silicon

171 - 178 4 1 - 49 291 - 297 257 - 263 287 - 288 315 - 3 1 9 133 - 140 315 - 3 1 9

123 - 131 501 - 508 363 - 374 287 - 288 4 2 3 - 430

604

Author Index

Schelb, W., see W. Ehrfeid Schiltz, A., Advantages of using spin-on-glass layer in interconnection dielectric planarization Schiltz, A., see M. Pons Sehmitt, R., D. Winkler and B. Lischke, E-beam testing of high speed electronic devices

Schue, F., B. Hnlil, R. Sagnes, C. Montginoul, L. Giral, F. Buiguez, B. Serre and C. Rosilio, Poly-4-bromostyrene, a high-performance negative electron resist Schwarzl, S., see I.W. Rangelow Seitz, H.K., A. Biacha, R. Clauberg and H. Beha, Energy and timeresolved photoemission in a promising new approach for contactless integrated-circuit testing Serre, B., see F. Schue Sharp, P.H., see F. Gnndail Shaver, D.C., L.A. Stern and N.P. Ecnnomnu, Mask and circuit repair applications of focused ion beam deposition (Abstract) Shaw, J., see E. Babich Slingedand, H.N., J.H. Bohlander, K.D. van der Mast and E. Koets, Progress on the Delft ion beam pattern generator Smith, H.I., see I. Piotnik Stangl, G., see R. Fischer Stanley, C.R., see S. Thoms Stecki, A.J., S. Balakrishnan, H.-S. Jin and J.C. Coreili, Micromachining of polyimide films with focused ion beams (Abstract) Stecki, A.J., C.-M. Lin, S.D. Chu and J.C. Coreili, Simulation of gradedbase bipolar transistor characteristics fabricated with a focused ion beam Stelter, Th., see K.-H. Miiller Stengi, G., see R. Fischer Stern, L.A., see D.C. Shaver Stevens, L., R. Jonckheere, E. Froyen, S. Decoutere and D. Lanneer, Determination of the proximity parameters in electron beam lithography using doughnut-structures Svintsov, A.A., see V.V. Aristov Takehara, D., see K. Gamo Thorns, S., S.P. Beaumont, C.D.W. Wilkinson, J. Frost and C.R. Stanley, UltrasmaU device fabrication using dry etching of GaAs Thong, J.T.L., see B.C. Breton Thoren, P., see I.W. Rangelow Tollkamp-Schierjott, C. and J. Windsor-Martin, The SEM as inspection and testing tool in the IC industry Tomita, M., see K. Gamo Toth, M., see I. Piotnik Tschudi, T., see J. Oischimke Tschudi, T., see V. Scheuer Unger, P., V. Biigli and H. Beneking, Application of titanium RIE to the fabrication of nm-scale structures

463 - 470 413 - 421 403 - 404 523 - 5 3 0

315 - 3 1 9 3 8 7 - 394

547 - 553 315 - 3 1 9 445 - 452 191 2 9 9 - 313 1 5 5 - 161 51 - 59 193 - 200 2 4 9 - 256 461 - 462

179 - 1 8 9 2 3 9 - 246 193 - 200 191

141 - 1 5 0 3 2 9 - 334 163 - 170 2 4 9 - 256 541 - 545 387 - 394 581 163 51405 423 -

586 170 59 412 430

279-286

605

Author Index

V/kzsonyi, E.B., S. Holly and Z. V~rtesy, Characterization of UV hardening process V~rtesy, Z., see E.B. Vhzsonyi Vettiger, P., see P. Buchmann

Wang, L.K., see P.J. Coane Wei, M., see Y. Wu Weidlich, H., see K.-H. Miiller Weigmann, U., see K.P. Miiller Wickramasinghe, H.K., see C.C. Williams Wijnaendts van Resandt, R.W., see Th. Zapf Wilkinson, C.D.W., see S. Thorns Williams, C.C. and H.K. Wickramasinghe, Scanning thermal profiler

Windbracke, W., see H. Betz Windbracke, W., H. Betz, H.-L. Huber, W. Pilz and S. Pongratz, Critical dimension control in X-ray masks with electroplated gold absorbers

Windsor-Martin, J., see C~ Tollkamp-Schierjott Winkler, D., see R. Schmitt Witman, D., see E. Babich Wolf, P., see R. Fischer Wolter, O., J. Greschner and U. Diirig, Silicon micro mechanics (SIMM): Si-beams with rectangular cross-section for atomic force sensing by means of STM (Abstract) Wu, Y. and M. Wei, The study of the electron-electron interaction in electron gun (Abstract) Yasuoka, Y., K. Harakawa, K. Gamo and S. Namba, Fabrication of thinfilm warm carrier infrared laser detectors using nitrocellulose selfdeveloping resist

Zaitsev, S.I., see V.V. Aristov Zapf, Th. and R.W. Wijnaendts van Resandt, Confocal laser microscope for submicron structure measurement

341 - 347 341 - 347 395 - 401 133 - 140 151 2 3 9 - 246 481 - 489 5 0 9 - 513 573 - 580 2 4 9 - 256 509 - 5 1 3 4 1 - 49 73 581523 299193 -

80 586 530 313 200

477 151

335 - 340 329 - 334 573 - 5 8 0