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Author index volume 6 (1987)
Microelectronic Engineering 6 (1987) 699-708 North-Holland
699
Author Index Volume 6 (1987) Ahmed, H., see M.J. Fiee Ahmed, H., see C.J.B. Ford Ahmed, H., see T.S. Norris Aihara, R., see H. Sawaragi Aiaoui, F., see G. Ben Assayag Alcouffe-Noailly, N., see M.E. Gnillaume Alcouffe-Noailly, N., see O. Hignette Amblard, G., see J.C. Guibert Anderson, E.H., D.P. Kern and H.I. Smith, Fabrication of tri-level electron b e a m lithography o f X-ray masks with 50 n m linewidths, and replication by X-ray nanolithography Arden, W. and K.-H. Miiller, Physical and technological limits in optical and X-ray lithography Aristov, V.V., S.V. Babin, A.V. Davydov, A.I. Erko, A.A. Svintsov and S.V. Redkin, Precise lithography for component integral optics of nanometer range Asari, To, see H. Ohki Babich, E., J. Shaw, M. Hatzakis, J. Paraszczak, R.W. Lenz and P.R. Dvornich, A comparison of the E-beam and UV-sensitivities and relative O2-plasma stabilities of organosilicon polymers. Part II. Lithographic characteristics of polysilphenylene siloxanes and some organic polymers with pendant silyl groups Babich, E., see J. Paraszczak Babin, S., see V.V. Aristov Bahna, Z., L. Merhari and J.-P. Moliton, Self-development rate of resists exposed to energetic ions (10 k e V - 5 0 0 keV) Baiocchi, EA., see L.E. Stiliwagon Balk, P., see V. Lauer Balladore, J.L., M. Pyee, H. Camon, E. Bourdel, J.P. Martinez and N. Sekkaki, Two methods for reaching electron nanolithography domain Banks, P.M., see G. Castrischer Barbuscia, G. and R. Traversini, Process integration concept (Invited Paper)
Batey, J., see S.S. Dana Bauer, E, see V. Lauer Baumann, P., see G. Castrischer Bellessa, J., E Carcenac, A. Izrael, H. Launois and D. Mailly, Nanostructures for quantum physics Ben Assayag, G., P. Sudraud, F. Aiaoui and L.W. Swanson, Metal droplet beams in M.E. technology: Production, focusing and deposition 0167-9317/87/$3.50 © 1987, Elsevier Science Publishers B.V. (North-Holland)
18916999361 349631 637 487 -
194 174 104 366 354 636 643 494
541 - 546 53 -
60
1 2 9 - 134 207 - 212
511 - 5 1 8 453 - 4 6 0 1 2 9 - 134 4 7 9 - 485 381 - 392 215 - 2 2 0 2 0 1 - 206 5 5 9 - 563 3 - 13 233 - 240 215 - 220 5 5 9 - 563 175 - 180 3 4 9 - 354
Author Index
700
Ben Assayag, G., see P. Sudraud Beneking, H., see A.M. Krings Beneking, H., see P. Unger Berger, S.D., see J.M. Macaulay Betz, H., see J. Chlebek B6gli, V., see P. Unger Bon, M., see P. Sudraud Bourdel, E., see J.L. Balladore Bourneix, J., see A. Madouri Breton, B.C., see J.T.L. Thong Brodie, A.D. and W.C. Nixon, An electron optical line source for microelectronic e n g i n e e r i n g Brown, A.G., see H. Willis Browne, M.T., see R.E. Burge Bru, B., see M. Iost Bruns, A., H. Luethje, F.A. Vollenbroek and E.J. Spiertz, A study of catalytically transformed n e g a t i v e X - r a y resists, based o n a q u e o u s b a s e developable r e s i n , a n a c i d g e n e r a t o r a n d a crosslinker Bruns, A., see H. Luethje Buchmann, L.-M., see A. Heuberger Buevoz, J.L., see M.E. Guillaume Burge, R.E., M.T. Browne and P. Charalambous, An X-ray projection method u s i n g z o n e plates for mask preparation w i t h s u b - m i c r o n sizes Burghause, H., see U. Weigmann Burlet, D. and H. Martin, The use of S.E.M. for linewidth measurements Burns, D.W., see C.C.G. Visser
583 -595
Camon, H., see J.L. Balladore Carcenac, E, see J. Bellessa Carcenac, F., see Y. Jin Caro, J., see R. Patovan Castei, E.D. and A.B. Ray, An integrated approach to defect detection, a n a l y s i s a n d r e d u c t i o n i n photolithography Castrischer, G., P.M. Banks, T.-M. Pang, P. Baumann, H. Griinwaid, I. Hussla, G. Lorenz, H. Stoll and H. Ramisch, In-situ temperature measurements f o r a l u m i n i u m etching Cerrina, F., see R. Redaelli Cerrina, F., see C.C.G. Visser Chaker, M., see I. Toubhans Charalambous, P., see R.E. Burge Chevallier, M., see J.C. Guibert Chlebek, J., H. Betz, A. Heuberger and H.-L. Huber, The influence of photoelectrons and fluorescence radiation on resolution i n X - r a y
201 - 206
lithography
Clampitt, R., R. Watkins and J. Whitaker, Custom IC repairs focused ion beams Clements, S.J., see M.J. Fice Coopmans, F., Resist overview (Invited Paper) Corelli, J.C., see C.C. Han
553 - 558 565 -570 527 - 532 221 - 226 565 - 570 583 - 595 201 - 2 0 6 241 - 2 4 5 683 - 688 111 - 116 473 - 478 227 - 232 69-
75
467 - 471 259-
264
333 - 342 631 - 6 3 6 227 - 232 617 - 622 679-
681
299-304
175 - 1 8 0 195 - 1 9 9 117 - 122 15 -
21
559-
563
519-
525
299- 304 281 - 2 8 6 227 - 232 487 - 494
221-
226
605 - 610 189- 194 369- 380 413 - 419
701
Author Index
Crapeila, S., see R. Redaelli Csepregi, L., see A. Heuberger Culimann, E., see P. Thompson Cunningham, Jr., W.C., see K.J. Orvek Cutter, D., see J. K61zer
5 1 9 - 525 333 - 342 293 - 297 393 - 3 9 8 23 - 28
D a m m e l , R., K . E D6ssei, J. Lingnau, J. Theis, H.-L. Huber and H. Oertel, P h o t o c a t a l y t i c n o v o l a k - b a s e d positive resist for X-ray l i t h o g r a p h y - Kinetics a n d s i m u l a t i o n
503 - 509
Dana, S.S., J. Batey, J.R. Maldonado, O. Vladimirsky, R. Fair and R. Viswanathan, Electrical resistivity a n d r a d i a t i o n d a m a g e in b o r o h y d r o - n i t r i d e X-ray l i t h o g r a p h y m a s k substrates David, P. a n d L. K a r a p i p e r i s , Particularities in the d e v e l o p m e n t characteristics o f ion b e a m exposed positive p o l y m e r resists Davis, G., see E. Turcu Davydov, A.V., see V.V. A r i s t o v Dechenaux, E., see A . Weiil D e m m e l e r , R., see S. Pongratz D6ssei, K.F., see R. D a m m e i
Dr~gan, G., see M. Duma Drift, E. van der, S. Radelaar, A. P r u y m b o o m a n d P.H. Kes, F a b r i c a t i o n
233 - 240 355 - 3 6 0 287 - 292 129 - 134 4 2 7 - 431 123 - 128 503 - 509 693 - 697
o f n a n o m e t e r - s c a l e devices for studies o f flux p i n n i n g in s u p e r c o n d u c t i n g d o u b l e layers o f a - N b 3 G e a n d N b N Duma, M. a n d G. Dr~gan, I n s p e c t i o n a n d process c o n t r o l in D S W lithography Dvornich, P.R., see E. Babich
693 - 697 5 1 1 - 518
Eden, K., see A . M . Krings Ehrensperger, W., see H. Ulrich Ehrlich, Ch., see S. Pongratz Erko, A.I., see V.V. Aristov Etienne, B., see Y. Jin
553 77 123 129 195
Ewald, D., X-ray l i t h o g r a p h y using silicon nitride m a s k s a n d the K o d a k 771 negative resist
305 - 311
Fabbro, R., see I. Toubhans Fabre, J.M., see E Schue Fair, R., see S.S. Dana Faral, B., see I. Toubhans
281 433 233 281
Fice, M., H. A h m e d a n d S.J. C l e m e n t s , F a b r i c a t i o n o f t e n t h - m i c r o n scale structures for s e m i c o n d u c t o r laser devices
Forchel, A., see M. Korn Forchel, A., see B.E. Maile Ford, C.J.B. a n d H. A h m e d , F a b r i c a t i o n o f G a A s h e t e r o j u n c t i o n ring structures F r a n c o u , J.M., see A . Weill
181
-
-
-
187
558 84 128 134 199
286 438 240 286
1 8 9 - 194 571 - 574 163 - 168
Frieling, F., see J. K61zer
169-174 427 - 4 3 1 23 - 28
G a m o , K., see Z. Xu
5 3 5 - 540
702
Author Index
Gao, Y., see A.M. Gosnet Garth, S.C.J., In-the-lens electron spectrometers for E-beam testing: A review Garth, S.C.J., see J.T.L. Thong Geomini, M.J.H.J., see F.A. Vollenbroek Germann, R., see M. Korn Germann, R., see B.E. Maile Giral, L., see F. Schue Goodall, F. and R.A. Lawes, Experience with deep UV excimer laser lithography G6rlich, S., H. Harbeck and P. Kessler, IC-internal logic verification using an integrated electron beam measurement system Gosnet, A.M., F.R. Ladan, M.C. Joncour and Y. Gao, Optimization of the stresses in tungsten sputtered films, study of their stability Gosnet, A.M., see A. Madouri Gourrier, S., see M. lost Gower, M., see E. Turcu Griinwald, H., see G. Castrischer Guckel, H., see C.C.G. Visser Guibert, J.C., M. Chevailier, P. Paniez and G. Amblard, An improved bilayer PMGI(1) lithographic process Guillaume, M.E., P. Livrozet, J.L. Buevoz and N. Alcouffe-Noailly, Accurate image modeling for submicron CD optical control Guillaume, M.E., see O. Hignette
Guttmann, P., see P. Unger Habermeier, H.-U., see J. Hars~inyi Han, C,C, and J.C. Corelli, Wet and dry developable photosensitive deep UV resist Harbeek, H., see S. G6rlieh Harms, M., see H. Luethje Hars~inyi, J. and H.-U. Habermeier, Fractal micropatterns generated by anodic etching Hatzakis, M., see E. Babieh Hatzakis, M., see J. Praszezak Haweley, D.D., see J.E. Lamb III Heard, P.J., P.D. Prewett and R.A. Lawes, Comparison of focused ion beam and laser techniques for optical mask repair Heidenreich, J., see J. Paraszczak Heuberger, A., L.-M. Buchmann, L. Csepregi and K.P. Miiller, Open silicon stencil masks for demagnifying ion projection Heuberger, A., see J. Chlebek Hignette, O., N. Alcouffe-Noaiily and M.E. Guillaume, A new signal processing method for overlay and grid characterization measurements Hiraoka, H., Resist image enhancement by UV-, soft vacuum pulsed electron beams and organometallic compounds Huber, H.-L., see J. Chlebek Huber, H.-L., see R. Dammel Huber, H.-L., see V. Lauer
253 - 258 667 683 495 571 163 433 -
672 688 501 574 168 438
61-
67
661 - 666 253 - 258 241 - 245 6 9 - 75 287 - 292 559 - 5 6 3 299-304 487 - 494 631 - 636 637 - 643 565 - 570 575 - 5 8 0 413 - 419 661 - 666 2 5 9 - 264 575 - 580 5 1 1 - 518 453 - 460 85 - 90 597 - 603 453 - 460 333 - 342 221 - 226 637 - 643 407 221503 215 -
412 226 509 220
Author Index H u b e r , H . - L . , see U. Mescheder H u b e r , H . - L . , see J. Trube
Huber, H.-L., see M. Weiss Hussla, I., see G. Castrischer
703 653 - 659 247 - 2 5 2 265 - 271 559-563
Ichihashi, M., see G. Matsuoka lost, M., S. Gourrier, B. Bru, P. Rabinzohn and F. Pasqualini, Linewidth
645 - 651
c o n t r o l in deep U V c o n ta c t l i t h o g r a p h y Isobe, M., see H. Ohki Izrael, A., see J. Bellessa
6 9 - 75 207 - 212 175 - 180
Jansen, G.H., see K.D. van der Mast Jin, Y., D. Maiily, E Carcenac, B. Etienne and H. Launois, Nanostructures in g a l li u m arsenide T E G F E T Joncour, M.C., see A.M. Gosnet Jones, G.A.C., see T.S. Norris Kajimura, K., see M. Komuro Kanayama, T., see T. Ohta Karapiperis, L., see P. David Kassing, R., see J. Olschimke Kato, T., see H. Onoda Kawashima, M., see H. Onoda Kern, D.P., see E.H. Anderson Kes, P.H., see E. van der Drift Kessler, P., see S. G6rlich Kitamura, O., see M. Komuro K61zer, J., F. Frieling and D. Cutter, Analysis strategy for internal measurements on V L S I devices Komuro, M., S. O k a y a m a , O. K i t a m u r a , W. M i z u t a n i , H. T o k u m o t o and K. Kajimura, Nanometer structure fabricated by F I B a n d its observation by S T M Komura, M., see T. Ohta Korec, J., see V. Lauer Korn, M., A. Forchel, M. M6hrle, R. Germann, K. Streubel and F. Schoiz, h / 4 shifted 1st and 2nd order D F B - g r a t i n g s for I n G a A s / I n P lasers Kosaka, Y., see H. Ohki Krings, A.M., K. Eden and H. Beneking, RIE etching of deep trenches in Si using C B r F 3 a n d SF 6 p l a s m a
Ladan, ER., see A.M. Gosnet L a m b III, J.E., D.D. Haweley and J.M. M o r i , S p i n - o n dry etch arc process for s u b m i c r o n l i t h o g r a p h y
Lauer, V., F. Bauer, J. Korec, H . - L . Huber and P. Balk, F a b r i c a t i o n o f h a l f m i c r o n M O S F E T s by means o f X-ray l i t h o g r a p h y Launois, H., see J. Bellessa Launois, H., see Y. Lin Lawes, R.A., see F. G o o d a l l
93-
98
195 - 199 253 - 2 5 8 9 9 - 104 343 447 355 547611 611 541 181 661 343 -
348 452 360 552 616 616 546 187 666 348
23-
28
343 - 3 4 8 447 - 452 215 - 220
5 7 1 - 574 207-212 553 - 558 253 - 258 85215 175 195 61
90
- 220 - 180 - 199 - 67
704
Author Index
Lawes, R.A., see P.J. Heard Lawless, M., see E. Turcu Lenz, R.W., see E. Babich
597 - 603 287 - 292 511 - 518
Li, J., J.-K. W a n g a n d S.-J. Wang, T h r e e - d i m e n s i o n a l d e v e l o p m e n t o f electron b e a m exposed resist p a t t e r n s s i m u l a t e d by using ray tracing model Lin, B.J., T h e future o f s u b h a l f - m i c r o m e t e r o p t i c a l l i t h o g r a p h y (Invited Paper)
147 - 151
Lingnau, J., see R. Dammel Liu, E.D., see H.-Y. Liu Liu, H.-Y. a n d E.D. Liu, D i f f u s i o n in AZ-5214 i m a g e reversal process a n d its a p p l i c a t i o n to E - b e a m p r o x i m i t y effect c o r r e c t i o n Livrozet, P., see M.E. G u i l l a u m e L6chel, B., see J. Trube Lorenz, G., see G. Castrischer Luethje, H., M. Harms, A. Bruns and U. Mackens, I m p r o v e d tungsten a b s o r b e r t e c h n o l o g y for s u b - h a l f - m i c r o n X-ray l i t h o g r a p h y Luethje, H., see A. Bruns Lux, J., see H. Miinzel Maeauley, J.M. a n d S.D. Berger, C h a r a c t e r i z a t i o n o f the l i t h o g r a p h i c p r o p e r t i e s o f i n o r g a n i c resists with n a n o m e t r e o n b u l k substrates Mackens, U., see H. Lnethje M a d o u r i , A., A . M . G o s n e t a n d J. B o u r n e i x , N o n h y d r o g e n a t e d m a t e r i als for X-ray m a s k s (Si3N 4 a n d SiC)
31 - 51 503 - 5 0 9 4 3 9 - 446 439-446 631 - 636 247 - 252 5 5 9 - 563 2 5 9 - 264 467 - 471 421 - 426
527 - 532 2 5 9 - 264 241 - 245
Maile, B.E., A. Forehel, R. Germann, A. Mensehig, K. Streubel, E Seholz, G. W e i m a n n a n d W. Sehlapp, F a b r i c a t i o n o f n a n o m e t e r width G a A s / A I G a A s a n d I n G a A s / I n P q u a n t u m wires Mailly, D., see J. Bellessa Mailly, D., see Y. J i n
Maldonado, J.R., see S.S. Dana M a r t i n , H., see D. Butler Martinez, J . E , see J.L. Balladore Mast, K.D. van der a n d G . H . Jansen, M o n t e C a r l o s i m u l a t i o n o f fast electron b e a m p a t t e r n generators
Matsui, S., see H. Sawaragi M a t s u o k a , G., H. M u r a k o s h i , K. Y a m a m o t o a n d M. lehihashi, Precise linewidth m e a s u r e m e n t using the electron b e a m m e t r o l o g y system M e F a r l a n d , J.C., see K.J. Orvek M c G o u e y , R., see J. P a r a s z c z a k M e l o t , J . E , A.W. S i o m a n a n d M.J. P e n b e r t h , Large d a t a b u f f e r for electron beam lithography Menschig, A., see B.E. Maile M e r h a r i , L., see Z. Bahna Meseheder, U., E M u n d a n d H . - L H u b e r , L i n e w i d t h m e t r o l o g y for Xray m a s k s with s u b h a l f m i c r o n feature size Meyerhofer, D., T h e o p t i m u m c o n t r a s t e n h a n c e m e n t layer in microlithography
Mizutani, W., see M. Komuro
163 175 195 233 679201 -
168 180 199 240 681 206
93 - 98 361 - 366 645 - 651 393 - 398 453 - 4 6 0 141 - 146 163 - 168 479 - 485 6 5 3 - 659 461 - 466 343 - 348
Author Index
M6hrle, M., see M. Korn Moliton, J.-P., see Z. Bahna Montginoui, C., see F. Schue
705
Morimoto, H., see H. Onoda Mortimer, S.H., see H. Willis Miiller, K.-H., see W. Arden Miiller, K.-H., see P. Thompson Miiller, K.P., see A. Heuberger Mund, E, see U. Mescheder Mungroo, A., see F. Schue
571 - 5 7 4 479 - 485 433 - 438 85 - 90 361 - 366 611 - 616 473 - 4 7 8 53 - 60 293 - 297 333 - 3 4 2 653 - 659 433 - 4 3 8
Miinzel, H., J. Lux and R. Schulz, A- and B-parameter dependent submicron stepper performance of positive type photoresist Murakoshi, H., see G. Matsuoka Mutsaers, C.M.J., see F.A. Vollenbroek
421 - 426 645 - 651 495 - 5 0 1
Mori, J.M., see ,I.E. Lamb III Mori, K., see H. Sawaragi
Nakazawa, H., see H. Ohki Namba, S., Current work on focused ion beams in Japan (Invited Paper) Namba, S., see Z. Xu Niemann, B., see E Unger Nijssen, W.EM., see EA. Vollenbroek Nixon, W.C., see A.D. Brodie Nixon, W.C., see J.T.L Thong Norris, T.S., G.A.C. Jones and H. Ahmed, Electron energy spread in high-voltage variable shape E-beam lithography systems
2 0 7 - 212 315 - 3 2 6 535 - 540 565 - 570 495 - 501 111 - 116 683 - 6 8 8
Oertel, H., see R. Dammel Oertel, H., see M. Weiss Ohki, H., H. Nakazawa, Y. Kosaka, H. Sato, T. Asari and M. Isobe,
503 - 509 265 - 271
Fabrication of fine and smooth curved features by E-beam lithography system Ohta, T., T. Kanayama and M. Knmuro, Focused ion beam lithography using A1203 resist Okayama, S., see M. Komuro Olsehimke, J., I.W. Rangelnw, T. Tsehudi and R. Kassing, Fabrication of 15/~m thick Si-hole masks for demagnifying projection systems for ion- or electron-beams O'Neill, F., see E. Tureu Onoda, H., H. Morimoto, M. Kawashima, Y. Watakabe and I". Kato, Elimination of substrate damage in focused-ion-beam repair of photomask Orloff, J., An optimized two lens optical column for use with a liquid metal ion source Orvek, K.J., W.C. Cunningham, Jr. and J.C. McFarland, An organosilicon photoresist for use in excimer laser lithography
Pang, T.-M., see G. Castrischer Paniez, E, see J.C. Guibert
9 9 - 104
207 - 212 447 - 452 343 - 348
547 - 5 5 2 287 - 292
6 1 1 - 616 327 - 3 3 2 393 - 3 9 8 5 5 9 - 563 487 - 494
706
Author Index
Paraszczak, J., E. Babich, R. McGouey, J. Heidenreich, M. Hatzakis a n d J. Shaw, The use o f o r g a n o s i l i c o n p o l y m e r s in multilayer p l a s m a resist processing Paraszczak, J., see E. B a b i c h P a s q u a l i n i , F., see M. lost Patovan, R., J. Caro, J. R o m i j n a n d S. R a d e l a a r , A l i g n m e n t m a r k e r s for E - b e a m writing o f the gate level pattern: F a b r i c a t i o n in an i n t e r m e d i ate stage a n d a l i g n m e n t accuracy Paul, H . - H . , L M S 2000 - A new m e t r o l o g y tool P e n b e r t h , M.J. a n d N.F. Rix, P e r f o r m a n c e m o d e l l i n g o f p a t t e r n recognit i o n techniques for c a l i b r a t i o n a n d registration m a r k d e t e c t i o n P e n b e r t h , M.J., see J.P. M e l o t Pepin, H., see I. T o u b h a n s Petzold, H.-C., R. P u t z a r , U. W e i g m a n n a n d I. Wilke, Repair o f clear X-ray m a s k defects by laser-induced metal d e p o s i t i o n P o n g r a t z , S., K. Reimer, R. D e m m e l e r a n d Ch. Ehrlich, H i g h r e s o l u t i o n E - b e a m l i t h o g r a p h y for X-ray m a s k m a k i n g Prewett, P.D., see P.J. H e a r d P r u y m b o o m , A., see E. van der D r i f t P u t z a r , R., see H.-C. Petzold Pyee, M., see J.L. B a l l a d o r e
453 - 460 511 - 5 1 8 6 9 - 75
117 - 122 6 8 9 - 691 135 - 140 141 - 146 281 - 286 623 - 628 -
128 603 187 628 206
Rabinzohn, P., see M. lost Radelaar, S., see E. van der Drift Radelaar, S., see R. Patovan Ramisch, H., see G. Castrischer Rangelow, I.W., see J. Olschimke Ray, A.B., see E.D. Castel Redaeili, R., G.M. Wells, F. Cerrina, S. Crapelia and G. Vento, Evalua-
69181 117 559 547 15 -
75 187 122 563 552 21
t i o n o f X-ray resists for s u b m i c r o n lithographyRedaelli, R., see C.C.G. Visser
519-525 2 9 9 - 304 129 - 134 123 - 128 77 - 84 135 - 140 117 - 122 3 9 9 - 406
Redkin, S.V., see V.V. Aristov Reimer, K., see S. Pongratz Rensch, C., see H. Ulrich Rix, N.F., see M.J. Penberth Romijn, J., see R. Patovan Rosilio, A., see C. Rosilio Rosilio, C., A. Rosilio and B. Serre, C o n t r i b u t i o n to the s t u d y o f polysilanes for p h o t o l i t h o g r a p h y
Sagnes, R., see F. Schue Sato, H., see H. O h k i Sawaragi, H., R. A i h a r a , S. M a t s u i , K. M o r t a n d M . H . Shearer, Developm e n t o f a f o c u s e d - i o n - b e a m l i t h o g r a p h y system Schaffer, H., see U. W e i g m a n n S c h a t t e n b u r g , M.L., I. T a n a k a a n d H.I. Smith, M i c r o g a p X-ray n a n o lithography S c h l a p p , W., see B.E. M a i l e Schoiz, F., see M. K o r n
123 597 181 623 201
3 9 9 - 406 433 - 438 2 0 7 - 212 361 - 366 617 - 622 273 - 279 163 - 168 571 - 574
707
Author Index
Schoiz, E, see B.E. Maile Schue, E, C. Montginoul, J.M. Fabre, L. Giral, A. Mungroo and R. Sagnes, Synthesis a n d studies o f resists b e a r i n g tetrathiafulvalene groups a n d sensitive to U V a n d electron b e a m irradiations
Schulz, R., see H. Miinzel Sekkaki, N., see J.L. Balladore Serre, B., see C. Rosilio Shaw, J., see E. Babich Shaw, J., see J. Paraszczak Shearer, M.H., see H. Sawaragi Silverman, P.J., see L.E. Stillwagon Sloman, A.W., see J.P. Melot Smith, H.I., see E.H. Anderson Smith, H.I., see M.L. Schattenburg Spiertz, E.J., see A. Bruns Stillwagon, L.E., M.J. Vasile, EA. Baiocchi, P.J. Siiverman and G.N. Taylor, The n a t u r e o f t i t a n i u m - c o n t a i n i n g films formed o n p o l y m e r surfaces by reactions o f sorbed water with TiCI4
Stoli, H., Streubei, Streubel, Sudraud,
see G. Castrischer K., see M. Korn K., see B.E. Maile P., G. Ben Assayag and M. Bon, Focused i o n b e a m repair in
microelectronics (Invited Paper)
Sudraud, P., see G. Ben Assayag Svintsov, A.A., see V.V. Aristov Swanson, L.W., see G. Ben Assayag Tanaka, I., see M.L. Schattenburg Taylor, G.N., see L.E. Stiliwagon Theis, J., see R. Dammel Thompson, P., E. Cullmann, W. Vach and K.-H. Miiller, A s y n c h r o t r o n c o m p a t i b l e p r o d u c t i o n oriented X-ray stepper
Thong, J.T.L., S.C.J. Garth, B.C. Breton a n d W.C. Nixon, Ultra high speed electron b e a m testing system Till, S.J., see H. Willis Tokumoto, H., see M. Komuro Tolikamp-Schierjott, C., The influence o f different SEM parameters o n C D m e a s u r e m e n t results Toubhans, I., R. Fabbro, B. Faral, M. Chaker and H. Pepin, X-ray lithography with laser-plasma sources
Traversini, R., see G. Barbuscia Troyon, M., Pulsed field emission electron or i o n g u n with energy filter Trube, J., H.-L. Huber, B. L6chel a n d W. Windbracke, A p p l i c a t i o n o f lead electroplating for X-ray a b s o r b e r p a t t e r n i n g
Tschudi, T., see J. Olschimke Turcu, E., G. Davis, M. Gower, F. O'Neill a n d M. Lawless, X-ray lithography using a K r F laser-plasma source at h~ = 1 keV
Ugiow, J.E., see C.C.G. Visser
163 - 1 6 8
433 - 438 421 - 4 2 6 201 - 206 3 9 9 - 406 511 - 518 453 - 460 3 6 1 - 366 381 - 392 141 - 146 541 - 546 273 - 279 467 - 471
381 - 3 9 2 5 5 9 - 563 571 - 574 163 - 1 6 8 583 349129 349-
595 354 134 354
273 - 279 381 - 392 503 - 509 293 - 297 683 - 688 473 - 478 343 - 348 673 - 678 281 - 286 3 - 13 105 - 110 247 - 2 5 2 547 - 552 287 - 292 299-304
708
Author Index
Ulrich, H., R.W. Wijnaendts-van-Resandt, C. Rensch and W. Ehrensperger, Direct writing laser l i t h o g r a p h y for p r o d u c t i o n o f microstructures
77-
84
Unger, P., V. Bogli, H. Beneking, B. Niemann and P. Guttmann, X-ray m i c r o s c o p e images with Fresnel zone plates f a b r i c a t e d by electron beam nanolithography
Vach, W., see P. Thompson Vasile, M.J., see L.E. Stillwagon Vento, G., see R. Redaelli Visser, C.C.G., J.E. Uglow, D.W. Burns, G.M. Wells, R. Redaelli, F. Cerrina a n d H. Guckel, A new silicon nitride m a s k t e c h n o l o g y for synchrot r o n r a d i a t i o n X-ray lithography: First results
Visser, R.J., see F.A. Vollenbroek Viswanathan, R., see S.S. Dana Vladimirsky, O., see S.S. Dana Vollenbroek, F.A., W.P.M. Nijssen, M.J.H.J. Geomini, C.M.J. Mutsaers a n d R.J. Visser, Built in m a s k (BIM): A new way to a s u b m i c r o n process with high r e s o l u t i o n a n d g o o d l a t i t u d e
Voilenbroek, F.A., see A. Bruns Wang, J.-K., see J. Li Wang, S.-J., see J. Li Watakabe, Y., see H. Onoda Watkins, R., see R. Clampitt Weigmann, U., H. Burghause and H. Schaffer, I d e n t i f i c a t i o n a n d removal o f o p a q u e defects on X-ray m a s k s in a focussed ion b e a m repair system Weigmann, U., see H.-C. Petzold Weili, A., J.M. F r a n c o u a n d E. D e c h e n a u x , P h o t o r e s i s t spin c o a t i n g m e c h a n i s m related to p o l y m e r s o l u t i o n r h e o l o g y Weimann, G., see B.E. Maile Weiss, M., H. Oertel a n d H . - L . H u b e r , Influence o f phase shift on pattern transfer in X-ray l i t h o g r a p h y
Wells, G.M., see R. Redaelli Wells, G.M., see C.C.G. Visser Whitaker, J., see R. Clampitt Wijnaendts-van-Resandt, R.W., see H . Ulrich Wilke, I., see H.-C. Petzold Wilkinson, C.D.W., N a n o f a b r i c a t i o n (Invited P a p e r ) Willis, H., A.G. Brown, S.J. Till a n d S.H. M o r t i m e r , A c o m p a r i s o n o f electron sensitive single, BI-, a n d tri-level resist schemes for the fabric a t i o n o f s u b - m i c r o n gate structures in d o p e d polysilicon Windbracke, W., see J. Trube
565 - 570 293 - 297 381 - 3 9 2 5 1 9 - 525
299495 233 233 -
304 501 240 240
495 - 501 467 - 471 147 147 611 605
-
151 151 616 610
617 - 622 623 - 628 427 - 431 163 - 168 265 519299605 77 623 155 -
271 525 304 610 84 628 162
473 - 478 247 - 252
Xu, Z., K. Gamo and S. Namba, Characteristics o f maskless ion b e a m assisted etching o f SiO2
Yamamoto, K., see G. Matsuoka
535 - 540 645 - 651
699
Author Index Volume 6 (1987) Ahmed, H., see M.J. Fiee Ahmed, H., see C.J.B. Ford Ahmed, H., see T.S. Norris Aihara, R., see H. Sawaragi Aiaoui, F., see G. Ben Assayag Alcouffe-Noailly, N., see M.E. Gnillaume Alcouffe-Noailly, N., see O. Hignette Amblard, G., see J.C. Guibert Anderson, E.H., D.P. Kern and H.I. Smith, Fabrication of tri-level electron b e a m lithography o f X-ray masks with 50 n m linewidths, and replication by X-ray nanolithography Arden, W. and K.-H. Miiller, Physical and technological limits in optical and X-ray lithography Aristov, V.V., S.V. Babin, A.V. Davydov, A.I. Erko, A.A. Svintsov and S.V. Redkin, Precise lithography for component integral optics of nanometer range Asari, To, see H. Ohki Babich, E., J. Shaw, M. Hatzakis, J. Paraszczak, R.W. Lenz and P.R. Dvornich, A comparison of the E-beam and UV-sensitivities and relative O2-plasma stabilities of organosilicon polymers. Part II. Lithographic characteristics of polysilphenylene siloxanes and some organic polymers with pendant silyl groups Babich, E., see J. Paraszczak Babin, S., see V.V. Aristov Bahna, Z., L. Merhari and J.-P. Moliton, Self-development rate of resists exposed to energetic ions (10 k e V - 5 0 0 keV) Baiocchi, EA., see L.E. Stiliwagon Balk, P., see V. Lauer Balladore, J.L., M. Pyee, H. Camon, E. Bourdel, J.P. Martinez and N. Sekkaki, Two methods for reaching electron nanolithography domain Banks, P.M., see G. Castrischer Barbuscia, G. and R. Traversini, Process integration concept (Invited Paper)
Batey, J., see S.S. Dana Bauer, E, see V. Lauer Baumann, P., see G. Castrischer Bellessa, J., E Carcenac, A. Izrael, H. Launois and D. Mailly, Nanostructures for quantum physics Ben Assayag, G., P. Sudraud, F. Aiaoui and L.W. Swanson, Metal droplet beams in M.E. technology: Production, focusing and deposition 0167-9317/87/$3.50 © 1987, Elsevier Science Publishers B.V. (North-Holland)
18916999361 349631 637 487 -
194 174 104 366 354 636 643 494
541 - 546 53 -
60
1 2 9 - 134 207 - 212
511 - 5 1 8 453 - 4 6 0 1 2 9 - 134 4 7 9 - 485 381 - 392 215 - 2 2 0 2 0 1 - 206 5 5 9 - 563 3 - 13 233 - 240 215 - 220 5 5 9 - 563 175 - 180 3 4 9 - 354
Author Index
700
Ben Assayag, G., see P. Sudraud Beneking, H., see A.M. Krings Beneking, H., see P. Unger Berger, S.D., see J.M. Macaulay Betz, H., see J. Chlebek B6gli, V., see P. Unger Bon, M., see P. Sudraud Bourdel, E., see J.L. Balladore Bourneix, J., see A. Madouri Breton, B.C., see J.T.L. Thong Brodie, A.D. and W.C. Nixon, An electron optical line source for microelectronic e n g i n e e r i n g Brown, A.G., see H. Willis Browne, M.T., see R.E. Burge Bru, B., see M. Iost Bruns, A., H. Luethje, F.A. Vollenbroek and E.J. Spiertz, A study of catalytically transformed n e g a t i v e X - r a y resists, based o n a q u e o u s b a s e developable r e s i n , a n a c i d g e n e r a t o r a n d a crosslinker Bruns, A., see H. Luethje Buchmann, L.-M., see A. Heuberger Buevoz, J.L., see M.E. Guillaume Burge, R.E., M.T. Browne and P. Charalambous, An X-ray projection method u s i n g z o n e plates for mask preparation w i t h s u b - m i c r o n sizes Burghause, H., see U. Weigmann Burlet, D. and H. Martin, The use of S.E.M. for linewidth measurements Burns, D.W., see C.C.G. Visser
583 -595
Camon, H., see J.L. Balladore Carcenac, E, see J. Bellessa Carcenac, F., see Y. Jin Caro, J., see R. Patovan Castei, E.D. and A.B. Ray, An integrated approach to defect detection, a n a l y s i s a n d r e d u c t i o n i n photolithography Castrischer, G., P.M. Banks, T.-M. Pang, P. Baumann, H. Griinwaid, I. Hussla, G. Lorenz, H. Stoll and H. Ramisch, In-situ temperature measurements f o r a l u m i n i u m etching Cerrina, F., see R. Redaelli Cerrina, F., see C.C.G. Visser Chaker, M., see I. Toubhans Charalambous, P., see R.E. Burge Chevallier, M., see J.C. Guibert Chlebek, J., H. Betz, A. Heuberger and H.-L. Huber, The influence of photoelectrons and fluorescence radiation on resolution i n X - r a y
201 - 206
lithography
Clampitt, R., R. Watkins and J. Whitaker, Custom IC repairs focused ion beams Clements, S.J., see M.J. Fice Coopmans, F., Resist overview (Invited Paper) Corelli, J.C., see C.C. Han
553 - 558 565 -570 527 - 532 221 - 226 565 - 570 583 - 595 201 - 2 0 6 241 - 2 4 5 683 - 688 111 - 116 473 - 478 227 - 232 69-
75
467 - 471 259-
264
333 - 342 631 - 6 3 6 227 - 232 617 - 622 679-
681
299-304
175 - 1 8 0 195 - 1 9 9 117 - 122 15 -
21
559-
563
519-
525
299- 304 281 - 2 8 6 227 - 232 487 - 494
221-
226
605 - 610 189- 194 369- 380 413 - 419
701
Author Index
Crapeila, S., see R. Redaelli Csepregi, L., see A. Heuberger Culimann, E., see P. Thompson Cunningham, Jr., W.C., see K.J. Orvek Cutter, D., see J. K61zer
5 1 9 - 525 333 - 342 293 - 297 393 - 3 9 8 23 - 28
D a m m e l , R., K . E D6ssei, J. Lingnau, J. Theis, H.-L. Huber and H. Oertel, P h o t o c a t a l y t i c n o v o l a k - b a s e d positive resist for X-ray l i t h o g r a p h y - Kinetics a n d s i m u l a t i o n
503 - 509
Dana, S.S., J. Batey, J.R. Maldonado, O. Vladimirsky, R. Fair and R. Viswanathan, Electrical resistivity a n d r a d i a t i o n d a m a g e in b o r o h y d r o - n i t r i d e X-ray l i t h o g r a p h y m a s k substrates David, P. a n d L. K a r a p i p e r i s , Particularities in the d e v e l o p m e n t characteristics o f ion b e a m exposed positive p o l y m e r resists Davis, G., see E. Turcu Davydov, A.V., see V.V. A r i s t o v Dechenaux, E., see A . Weiil D e m m e l e r , R., see S. Pongratz D6ssei, K.F., see R. D a m m e i
Dr~gan, G., see M. Duma Drift, E. van der, S. Radelaar, A. P r u y m b o o m a n d P.H. Kes, F a b r i c a t i o n
233 - 240 355 - 3 6 0 287 - 292 129 - 134 4 2 7 - 431 123 - 128 503 - 509 693 - 697
o f n a n o m e t e r - s c a l e devices for studies o f flux p i n n i n g in s u p e r c o n d u c t i n g d o u b l e layers o f a - N b 3 G e a n d N b N Duma, M. a n d G. Dr~gan, I n s p e c t i o n a n d process c o n t r o l in D S W lithography Dvornich, P.R., see E. Babich
693 - 697 5 1 1 - 518
Eden, K., see A . M . Krings Ehrensperger, W., see H. Ulrich Ehrlich, Ch., see S. Pongratz Erko, A.I., see V.V. Aristov Etienne, B., see Y. Jin
553 77 123 129 195
Ewald, D., X-ray l i t h o g r a p h y using silicon nitride m a s k s a n d the K o d a k 771 negative resist
305 - 311
Fabbro, R., see I. Toubhans Fabre, J.M., see E Schue Fair, R., see S.S. Dana Faral, B., see I. Toubhans
281 433 233 281
Fice, M., H. A h m e d a n d S.J. C l e m e n t s , F a b r i c a t i o n o f t e n t h - m i c r o n scale structures for s e m i c o n d u c t o r laser devices
Forchel, A., see M. Korn Forchel, A., see B.E. Maile Ford, C.J.B. a n d H. A h m e d , F a b r i c a t i o n o f G a A s h e t e r o j u n c t i o n ring structures F r a n c o u , J.M., see A . Weill
181
-
-
-
187
558 84 128 134 199
286 438 240 286
1 8 9 - 194 571 - 574 163 - 168
Frieling, F., see J. K61zer
169-174 427 - 4 3 1 23 - 28
G a m o , K., see Z. Xu
5 3 5 - 540
702
Author Index
Gao, Y., see A.M. Gosnet Garth, S.C.J., In-the-lens electron spectrometers for E-beam testing: A review Garth, S.C.J., see J.T.L. Thong Geomini, M.J.H.J., see F.A. Vollenbroek Germann, R., see M. Korn Germann, R., see B.E. Maile Giral, L., see F. Schue Goodall, F. and R.A. Lawes, Experience with deep UV excimer laser lithography G6rlich, S., H. Harbeck and P. Kessler, IC-internal logic verification using an integrated electron beam measurement system Gosnet, A.M., F.R. Ladan, M.C. Joncour and Y. Gao, Optimization of the stresses in tungsten sputtered films, study of their stability Gosnet, A.M., see A. Madouri Gourrier, S., see M. lost Gower, M., see E. Turcu Griinwald, H., see G. Castrischer Guckel, H., see C.C.G. Visser Guibert, J.C., M. Chevailier, P. Paniez and G. Amblard, An improved bilayer PMGI(1) lithographic process Guillaume, M.E., P. Livrozet, J.L. Buevoz and N. Alcouffe-Noailly, Accurate image modeling for submicron CD optical control Guillaume, M.E., see O. Hignette
Guttmann, P., see P. Unger Habermeier, H.-U., see J. Hars~inyi Han, C,C, and J.C. Corelli, Wet and dry developable photosensitive deep UV resist Harbeek, H., see S. G6rlieh Harms, M., see H. Luethje Hars~inyi, J. and H.-U. Habermeier, Fractal micropatterns generated by anodic etching Hatzakis, M., see E. Babieh Hatzakis, M., see J. Praszezak Haweley, D.D., see J.E. Lamb III Heard, P.J., P.D. Prewett and R.A. Lawes, Comparison of focused ion beam and laser techniques for optical mask repair Heidenreich, J., see J. Paraszczak Heuberger, A., L.-M. Buchmann, L. Csepregi and K.P. Miiller, Open silicon stencil masks for demagnifying ion projection Heuberger, A., see J. Chlebek Hignette, O., N. Alcouffe-Noaiily and M.E. Guillaume, A new signal processing method for overlay and grid characterization measurements Hiraoka, H., Resist image enhancement by UV-, soft vacuum pulsed electron beams and organometallic compounds Huber, H.-L., see J. Chlebek Huber, H.-L., see R. Dammel Huber, H.-L., see V. Lauer
253 - 258 667 683 495 571 163 433 -
672 688 501 574 168 438
61-
67
661 - 666 253 - 258 241 - 245 6 9 - 75 287 - 292 559 - 5 6 3 299-304 487 - 494 631 - 636 637 - 643 565 - 570 575 - 5 8 0 413 - 419 661 - 666 2 5 9 - 264 575 - 580 5 1 1 - 518 453 - 460 85 - 90 597 - 603 453 - 460 333 - 342 221 - 226 637 - 643 407 221503 215 -
412 226 509 220
Author Index H u b e r , H . - L . , see U. Mescheder H u b e r , H . - L . , see J. Trube
Huber, H.-L., see M. Weiss Hussla, I., see G. Castrischer
703 653 - 659 247 - 2 5 2 265 - 271 559-563
Ichihashi, M., see G. Matsuoka lost, M., S. Gourrier, B. Bru, P. Rabinzohn and F. Pasqualini, Linewidth
645 - 651
c o n t r o l in deep U V c o n ta c t l i t h o g r a p h y Isobe, M., see H. Ohki Izrael, A., see J. Bellessa
6 9 - 75 207 - 212 175 - 180
Jansen, G.H., see K.D. van der Mast Jin, Y., D. Maiily, E Carcenac, B. Etienne and H. Launois, Nanostructures in g a l li u m arsenide T E G F E T Joncour, M.C., see A.M. Gosnet Jones, G.A.C., see T.S. Norris Kajimura, K., see M. Komuro Kanayama, T., see T. Ohta Karapiperis, L., see P. David Kassing, R., see J. Olschimke Kato, T., see H. Onoda Kawashima, M., see H. Onoda Kern, D.P., see E.H. Anderson Kes, P.H., see E. van der Drift Kessler, P., see S. G6rlich Kitamura, O., see M. Komuro K61zer, J., F. Frieling and D. Cutter, Analysis strategy for internal measurements on V L S I devices Komuro, M., S. O k a y a m a , O. K i t a m u r a , W. M i z u t a n i , H. T o k u m o t o and K. Kajimura, Nanometer structure fabricated by F I B a n d its observation by S T M Komura, M., see T. Ohta Korec, J., see V. Lauer Korn, M., A. Forchel, M. M6hrle, R. Germann, K. Streubel and F. Schoiz, h / 4 shifted 1st and 2nd order D F B - g r a t i n g s for I n G a A s / I n P lasers Kosaka, Y., see H. Ohki Krings, A.M., K. Eden and H. Beneking, RIE etching of deep trenches in Si using C B r F 3 a n d SF 6 p l a s m a
Ladan, ER., see A.M. Gosnet L a m b III, J.E., D.D. Haweley and J.M. M o r i , S p i n - o n dry etch arc process for s u b m i c r o n l i t h o g r a p h y
Lauer, V., F. Bauer, J. Korec, H . - L . Huber and P. Balk, F a b r i c a t i o n o f h a l f m i c r o n M O S F E T s by means o f X-ray l i t h o g r a p h y Launois, H., see J. Bellessa Launois, H., see Y. Lin Lawes, R.A., see F. G o o d a l l
93-
98
195 - 199 253 - 2 5 8 9 9 - 104 343 447 355 547611 611 541 181 661 343 -
348 452 360 552 616 616 546 187 666 348
23-
28
343 - 3 4 8 447 - 452 215 - 220
5 7 1 - 574 207-212 553 - 558 253 - 258 85215 175 195 61
90
- 220 - 180 - 199 - 67
704
Author Index
Lawes, R.A., see P.J. Heard Lawless, M., see E. Turcu Lenz, R.W., see E. Babich
597 - 603 287 - 292 511 - 518
Li, J., J.-K. W a n g a n d S.-J. Wang, T h r e e - d i m e n s i o n a l d e v e l o p m e n t o f electron b e a m exposed resist p a t t e r n s s i m u l a t e d by using ray tracing model Lin, B.J., T h e future o f s u b h a l f - m i c r o m e t e r o p t i c a l l i t h o g r a p h y (Invited Paper)
147 - 151
Lingnau, J., see R. Dammel Liu, E.D., see H.-Y. Liu Liu, H.-Y. a n d E.D. Liu, D i f f u s i o n in AZ-5214 i m a g e reversal process a n d its a p p l i c a t i o n to E - b e a m p r o x i m i t y effect c o r r e c t i o n Livrozet, P., see M.E. G u i l l a u m e L6chel, B., see J. Trube Lorenz, G., see G. Castrischer Luethje, H., M. Harms, A. Bruns and U. Mackens, I m p r o v e d tungsten a b s o r b e r t e c h n o l o g y for s u b - h a l f - m i c r o n X-ray l i t h o g r a p h y Luethje, H., see A. Bruns Lux, J., see H. Miinzel Maeauley, J.M. a n d S.D. Berger, C h a r a c t e r i z a t i o n o f the l i t h o g r a p h i c p r o p e r t i e s o f i n o r g a n i c resists with n a n o m e t r e o n b u l k substrates Mackens, U., see H. Lnethje M a d o u r i , A., A . M . G o s n e t a n d J. B o u r n e i x , N o n h y d r o g e n a t e d m a t e r i als for X-ray m a s k s (Si3N 4 a n d SiC)
31 - 51 503 - 5 0 9 4 3 9 - 446 439-446 631 - 636 247 - 252 5 5 9 - 563 2 5 9 - 264 467 - 471 421 - 426
527 - 532 2 5 9 - 264 241 - 245
Maile, B.E., A. Forehel, R. Germann, A. Mensehig, K. Streubel, E Seholz, G. W e i m a n n a n d W. Sehlapp, F a b r i c a t i o n o f n a n o m e t e r width G a A s / A I G a A s a n d I n G a A s / I n P q u a n t u m wires Mailly, D., see J. Bellessa Mailly, D., see Y. J i n
Maldonado, J.R., see S.S. Dana M a r t i n , H., see D. Butler Martinez, J . E , see J.L. Balladore Mast, K.D. van der a n d G . H . Jansen, M o n t e C a r l o s i m u l a t i o n o f fast electron b e a m p a t t e r n generators
Matsui, S., see H. Sawaragi M a t s u o k a , G., H. M u r a k o s h i , K. Y a m a m o t o a n d M. lehihashi, Precise linewidth m e a s u r e m e n t using the electron b e a m m e t r o l o g y system M e F a r l a n d , J.C., see K.J. Orvek M c G o u e y , R., see J. P a r a s z c z a k M e l o t , J . E , A.W. S i o m a n a n d M.J. P e n b e r t h , Large d a t a b u f f e r for electron beam lithography Menschig, A., see B.E. Maile M e r h a r i , L., see Z. Bahna Meseheder, U., E M u n d a n d H . - L H u b e r , L i n e w i d t h m e t r o l o g y for Xray m a s k s with s u b h a l f m i c r o n feature size Meyerhofer, D., T h e o p t i m u m c o n t r a s t e n h a n c e m e n t layer in microlithography
Mizutani, W., see M. Komuro
163 175 195 233 679201 -
168 180 199 240 681 206
93 - 98 361 - 366 645 - 651 393 - 398 453 - 4 6 0 141 - 146 163 - 168 479 - 485 6 5 3 - 659 461 - 466 343 - 348
Author Index
M6hrle, M., see M. Korn Moliton, J.-P., see Z. Bahna Montginoui, C., see F. Schue
705
Morimoto, H., see H. Onoda Mortimer, S.H., see H. Willis Miiller, K.-H., see W. Arden Miiller, K.-H., see P. Thompson Miiller, K.P., see A. Heuberger Mund, E, see U. Mescheder Mungroo, A., see F. Schue
571 - 5 7 4 479 - 485 433 - 438 85 - 90 361 - 366 611 - 616 473 - 4 7 8 53 - 60 293 - 297 333 - 3 4 2 653 - 659 433 - 4 3 8
Miinzel, H., J. Lux and R. Schulz, A- and B-parameter dependent submicron stepper performance of positive type photoresist Murakoshi, H., see G. Matsuoka Mutsaers, C.M.J., see F.A. Vollenbroek
421 - 426 645 - 651 495 - 5 0 1
Mori, J.M., see ,I.E. Lamb III Mori, K., see H. Sawaragi
Nakazawa, H., see H. Ohki Namba, S., Current work on focused ion beams in Japan (Invited Paper) Namba, S., see Z. Xu Niemann, B., see E Unger Nijssen, W.EM., see EA. Vollenbroek Nixon, W.C., see A.D. Brodie Nixon, W.C., see J.T.L Thong Norris, T.S., G.A.C. Jones and H. Ahmed, Electron energy spread in high-voltage variable shape E-beam lithography systems
2 0 7 - 212 315 - 3 2 6 535 - 540 565 - 570 495 - 501 111 - 116 683 - 6 8 8
Oertel, H., see R. Dammel Oertel, H., see M. Weiss Ohki, H., H. Nakazawa, Y. Kosaka, H. Sato, T. Asari and M. Isobe,
503 - 509 265 - 271
Fabrication of fine and smooth curved features by E-beam lithography system Ohta, T., T. Kanayama and M. Knmuro, Focused ion beam lithography using A1203 resist Okayama, S., see M. Komuro Olsehimke, J., I.W. Rangelnw, T. Tsehudi and R. Kassing, Fabrication of 15/~m thick Si-hole masks for demagnifying projection systems for ion- or electron-beams O'Neill, F., see E. Tureu Onoda, H., H. Morimoto, M. Kawashima, Y. Watakabe and I". Kato, Elimination of substrate damage in focused-ion-beam repair of photomask Orloff, J., An optimized two lens optical column for use with a liquid metal ion source Orvek, K.J., W.C. Cunningham, Jr. and J.C. McFarland, An organosilicon photoresist for use in excimer laser lithography
Pang, T.-M., see G. Castrischer Paniez, E, see J.C. Guibert
9 9 - 104
207 - 212 447 - 452 343 - 348
547 - 5 5 2 287 - 292
6 1 1 - 616 327 - 3 3 2 393 - 3 9 8 5 5 9 - 563 487 - 494
706
Author Index
Paraszczak, J., E. Babich, R. McGouey, J. Heidenreich, M. Hatzakis a n d J. Shaw, The use o f o r g a n o s i l i c o n p o l y m e r s in multilayer p l a s m a resist processing Paraszczak, J., see E. B a b i c h P a s q u a l i n i , F., see M. lost Patovan, R., J. Caro, J. R o m i j n a n d S. R a d e l a a r , A l i g n m e n t m a r k e r s for E - b e a m writing o f the gate level pattern: F a b r i c a t i o n in an i n t e r m e d i ate stage a n d a l i g n m e n t accuracy Paul, H . - H . , L M S 2000 - A new m e t r o l o g y tool P e n b e r t h , M.J. a n d N.F. Rix, P e r f o r m a n c e m o d e l l i n g o f p a t t e r n recognit i o n techniques for c a l i b r a t i o n a n d registration m a r k d e t e c t i o n P e n b e r t h , M.J., see J.P. M e l o t Pepin, H., see I. T o u b h a n s Petzold, H.-C., R. P u t z a r , U. W e i g m a n n a n d I. Wilke, Repair o f clear X-ray m a s k defects by laser-induced metal d e p o s i t i o n P o n g r a t z , S., K. Reimer, R. D e m m e l e r a n d Ch. Ehrlich, H i g h r e s o l u t i o n E - b e a m l i t h o g r a p h y for X-ray m a s k m a k i n g Prewett, P.D., see P.J. H e a r d P r u y m b o o m , A., see E. van der D r i f t P u t z a r , R., see H.-C. Petzold Pyee, M., see J.L. B a l l a d o r e
453 - 460 511 - 5 1 8 6 9 - 75
117 - 122 6 8 9 - 691 135 - 140 141 - 146 281 - 286 623 - 628 -
128 603 187 628 206
Rabinzohn, P., see M. lost Radelaar, S., see E. van der Drift Radelaar, S., see R. Patovan Ramisch, H., see G. Castrischer Rangelow, I.W., see J. Olschimke Ray, A.B., see E.D. Castel Redaeili, R., G.M. Wells, F. Cerrina, S. Crapelia and G. Vento, Evalua-
69181 117 559 547 15 -
75 187 122 563 552 21
t i o n o f X-ray resists for s u b m i c r o n lithographyRedaelli, R., see C.C.G. Visser
519-525 2 9 9 - 304 129 - 134 123 - 128 77 - 84 135 - 140 117 - 122 3 9 9 - 406
Redkin, S.V., see V.V. Aristov Reimer, K., see S. Pongratz Rensch, C., see H. Ulrich Rix, N.F., see M.J. Penberth Romijn, J., see R. Patovan Rosilio, A., see C. Rosilio Rosilio, C., A. Rosilio and B. Serre, C o n t r i b u t i o n to the s t u d y o f polysilanes for p h o t o l i t h o g r a p h y
Sagnes, R., see F. Schue Sato, H., see H. O h k i Sawaragi, H., R. A i h a r a , S. M a t s u i , K. M o r t a n d M . H . Shearer, Developm e n t o f a f o c u s e d - i o n - b e a m l i t h o g r a p h y system Schaffer, H., see U. W e i g m a n n S c h a t t e n b u r g , M.L., I. T a n a k a a n d H.I. Smith, M i c r o g a p X-ray n a n o lithography S c h l a p p , W., see B.E. M a i l e Schoiz, F., see M. K o r n
123 597 181 623 201
3 9 9 - 406 433 - 438 2 0 7 - 212 361 - 366 617 - 622 273 - 279 163 - 168 571 - 574
707
Author Index
Schoiz, E, see B.E. Maile Schue, E, C. Montginoul, J.M. Fabre, L. Giral, A. Mungroo and R. Sagnes, Synthesis a n d studies o f resists b e a r i n g tetrathiafulvalene groups a n d sensitive to U V a n d electron b e a m irradiations
Schulz, R., see H. Miinzel Sekkaki, N., see J.L. Balladore Serre, B., see C. Rosilio Shaw, J., see E. Babich Shaw, J., see J. Paraszczak Shearer, M.H., see H. Sawaragi Silverman, P.J., see L.E. Stillwagon Sloman, A.W., see J.P. Melot Smith, H.I., see E.H. Anderson Smith, H.I., see M.L. Schattenburg Spiertz, E.J., see A. Bruns Stillwagon, L.E., M.J. Vasile, EA. Baiocchi, P.J. Siiverman and G.N. Taylor, The n a t u r e o f t i t a n i u m - c o n t a i n i n g films formed o n p o l y m e r surfaces by reactions o f sorbed water with TiCI4
Stoli, H., Streubei, Streubel, Sudraud,
see G. Castrischer K., see M. Korn K., see B.E. Maile P., G. Ben Assayag and M. Bon, Focused i o n b e a m repair in
microelectronics (Invited Paper)
Sudraud, P., see G. Ben Assayag Svintsov, A.A., see V.V. Aristov Swanson, L.W., see G. Ben Assayag Tanaka, I., see M.L. Schattenburg Taylor, G.N., see L.E. Stiliwagon Theis, J., see R. Dammel Thompson, P., E. Cullmann, W. Vach and K.-H. Miiller, A s y n c h r o t r o n c o m p a t i b l e p r o d u c t i o n oriented X-ray stepper
Thong, J.T.L., S.C.J. Garth, B.C. Breton a n d W.C. Nixon, Ultra high speed electron b e a m testing system Till, S.J., see H. Willis Tokumoto, H., see M. Komuro Tolikamp-Schierjott, C., The influence o f different SEM parameters o n C D m e a s u r e m e n t results Toubhans, I., R. Fabbro, B. Faral, M. Chaker and H. Pepin, X-ray lithography with laser-plasma sources
Traversini, R., see G. Barbuscia Troyon, M., Pulsed field emission electron or i o n g u n with energy filter Trube, J., H.-L. Huber, B. L6chel a n d W. Windbracke, A p p l i c a t i o n o f lead electroplating for X-ray a b s o r b e r p a t t e r n i n g
Tschudi, T., see J. Olschimke Turcu, E., G. Davis, M. Gower, F. O'Neill a n d M. Lawless, X-ray lithography using a K r F laser-plasma source at h~ = 1 keV
Ugiow, J.E., see C.C.G. Visser
163 - 1 6 8
433 - 438 421 - 4 2 6 201 - 206 3 9 9 - 406 511 - 518 453 - 460 3 6 1 - 366 381 - 392 141 - 146 541 - 546 273 - 279 467 - 471
381 - 3 9 2 5 5 9 - 563 571 - 574 163 - 1 6 8 583 349129 349-
595 354 134 354
273 - 279 381 - 392 503 - 509 293 - 297 683 - 688 473 - 478 343 - 348 673 - 678 281 - 286 3 - 13 105 - 110 247 - 2 5 2 547 - 552 287 - 292 299-304
708
Author Index
Ulrich, H., R.W. Wijnaendts-van-Resandt, C. Rensch and W. Ehrensperger, Direct writing laser l i t h o g r a p h y for p r o d u c t i o n o f microstructures
77-
84
Unger, P., V. Bogli, H. Beneking, B. Niemann and P. Guttmann, X-ray m i c r o s c o p e images with Fresnel zone plates f a b r i c a t e d by electron beam nanolithography
Vach, W., see P. Thompson Vasile, M.J., see L.E. Stillwagon Vento, G., see R. Redaelli Visser, C.C.G., J.E. Uglow, D.W. Burns, G.M. Wells, R. Redaelli, F. Cerrina a n d H. Guckel, A new silicon nitride m a s k t e c h n o l o g y for synchrot r o n r a d i a t i o n X-ray lithography: First results
Visser, R.J., see F.A. Vollenbroek Viswanathan, R., see S.S. Dana Vladimirsky, O., see S.S. Dana Vollenbroek, F.A., W.P.M. Nijssen, M.J.H.J. Geomini, C.M.J. Mutsaers a n d R.J. Visser, Built in m a s k (BIM): A new way to a s u b m i c r o n process with high r e s o l u t i o n a n d g o o d l a t i t u d e
Voilenbroek, F.A., see A. Bruns Wang, J.-K., see J. Li Wang, S.-J., see J. Li Watakabe, Y., see H. Onoda Watkins, R., see R. Clampitt Weigmann, U., H. Burghause and H. Schaffer, I d e n t i f i c a t i o n a n d removal o f o p a q u e defects on X-ray m a s k s in a focussed ion b e a m repair system Weigmann, U., see H.-C. Petzold Weili, A., J.M. F r a n c o u a n d E. D e c h e n a u x , P h o t o r e s i s t spin c o a t i n g m e c h a n i s m related to p o l y m e r s o l u t i o n r h e o l o g y Weimann, G., see B.E. Maile Weiss, M., H. Oertel a n d H . - L . H u b e r , Influence o f phase shift on pattern transfer in X-ray l i t h o g r a p h y
Wells, G.M., see R. Redaelli Wells, G.M., see C.C.G. Visser Whitaker, J., see R. Clampitt Wijnaendts-van-Resandt, R.W., see H . Ulrich Wilke, I., see H.-C. Petzold Wilkinson, C.D.W., N a n o f a b r i c a t i o n (Invited P a p e r ) Willis, H., A.G. Brown, S.J. Till a n d S.H. M o r t i m e r , A c o m p a r i s o n o f electron sensitive single, BI-, a n d tri-level resist schemes for the fabric a t i o n o f s u b - m i c r o n gate structures in d o p e d polysilicon Windbracke, W., see J. Trube
565 - 570 293 - 297 381 - 3 9 2 5 1 9 - 525
299495 233 233 -
304 501 240 240
495 - 501 467 - 471 147 147 611 605
-
151 151 616 610
617 - 622 623 - 628 427 - 431 163 - 168 265 519299605 77 623 155 -
271 525 304 610 84 628 162
473 - 478 247 - 252
Xu, Z., K. Gamo and S. Namba, Characteristics o f maskless ion b e a m assisted etching o f SiO2
Yamamoto, K., see G. Matsuoka
535 - 540 645 - 651