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Chip architecture: a revolution brewing
178
World Abstracts on Microelectronics and Reliability
Clean room garments: where from here? MARK S. DAHLSTROM. Semiconductor Int., 110 (April 1983). The clean room garment is of great importance to many industries today. In fact, it can mean the economic survival of a company. Advances in silicon technology for the semiconductor industry, Part I. ROBERT B. SWAROOP. Solid St. Technol., 111 (June 1983). The semiconductor industry is becoming stringent on silicon material requirements as the device fabrication technology changes from LSI to VLSI. This paper briefly reviews methods for coping with these requirements: crystal growing technology, oxygen control, and intrinsic and extrinsic gettering in silicon. Trends in semi-custom integrated circuits--an overview. A. PYNE. Microelectron. J. 14 (3), 5 (1983). The semi-custom market is one of the fastest growing. Nearly all of the major semiconductor manufacturers are now offering a semi-custom service and with the comparatively low cost of the device (compared to full custom) many OCMs now see this as a way of bringing their design up-to-date without incurring the enormous costs of the more conventional way, using standard or custom devices. 5. M I C R O E L E C T R O N I C S - - D E S I G N
Lithography steps ahead to meet the VLSI challenge. JERRY LYMAN. Electronics, 121 (14 July 1983). Optical systems still dominate production, while two X-ray units go commercial and ion-beam gear waits in the wings. Chip architecture: a revolution brewing. FRED GUTERL. IEEE Spectrum 30 (July 1983). Seeking to tailor new micros to challenging applications, designers are scrutinizing entrenched mainframe concepts as never before. What makes CMOS run? ROGERDETTMER.Electronics Power, 547 (July/August 1983). CMOS logic has traditionally been restricted to low-speed applications. The new high-speed CMOS family has the speed to match LSTTL, and promises to become the most popular logic family available. Important considerations in selecting anisotropic plasma etching equipment. S. BROYDO. Solid St. Technol., 159 (April 1983). Some important aspects of plasma physics and chemistry affecting the parameters characterizing plasma etching processes, e.g. anisotropy, selectivity, uniformity and reproducibility are examined. The connection between these parameters and features of the etching equipment available on the market are established. This information should help the engineer judge the ability of a specific plasma etching process within a given machine to satisfy his requirements for integrated circuit fabrication. High-pressure oxidation in n-channel MOS technology. E BUSSMANN.Semiconductor Int., 162 (April 1983). Experiments suggest that high-pressure field oxidation may represent the most favourable fabrication process. Silicon epitaxial wafer profiling using the mercury-silicon Schottky diode differential capacitance method. PHIL1P S. SCHAFFER and THOMAS R. LALLY. Solid St. Technol., 229 (April 1983). A reliable method is needed to characterize doping profiles of silicon epitaxial wafers as an in-process production tool. A technique is discussed which is very accurate, reproducible, rapid, non-destructive, and allows many areas across a wafer to be characterized. With this technique, every epitaxial run can be evaluated for dopant concentration prior to producing the succeeding run. The substrate/epitaxial layer interface can also be evaluated for many combinations of carrier concentration and thickness. Many of the critical preparation and calibration techniques
Silicon and hybrid micro-electronic sensors. S. MIDDELHOEK, D. J. W. NOORLAG and G. K. STEENVOORDEN. Electrocomponent Sci. Te~hnol. 10, 217 (1983). The penetration of micro-electronics into new markets is seriously hampered by the lack of efficient, low-cost sensors, It is not surprising therefore to find that these devices are the subject of research in many laboratories. This paper gives a review of the most important sensors which are fabricated in silicon planar or hybrid technology. The review is preceded by some general considerations with respect to measurement systems and signal conversion. The changing face of engineering. Electronics, 125 (31 May 1983). Harnessing computer power in chips has wrought a revolution in the way electronics engineers work, and to flourish, they must cope with the ongoing challenges of software and systems design. CAD systems: meeting the challenge of VLSI design. Semiconductor Int., 60 (March 1983). To keep pace within the semiconductor industry IC manufacturers find themselves relying upon CAD systems. CAD systems offer the user significant productivity improvements. AND
CONSTRUCTION
are described, which, if not performed properly, will lead to erroneous results.
Recent advances in hetero-epitaxial silicon-on-insulator technology. Part I. ANIL GUPTA and PRAHALAD K. VASUDEV. Solid St. Technol., 104 (February 1983). Silicon-on sapphire (SOS) has matured as the primary hetero-epitaxial siliconon-insulator technology for fabricating integrated circuits. Recent advances in the growth, characterization and processing of SOS material for commercial and military VLSI applications are reviewed. A major deficiency preventing the realization of the full potential of SOS technology has been the quality of the as-grown epitaxial Si film. Crystallinity, chemical impurities and electrical properties of SOS films are evaluated by both destructive and non-destructive measurement techniques. Their advantages and limitations are analysed. Material improvement processes, such as laser annealing, solid-phase epitaxial regrowth and optimization of epitaxial growth conditions, are reviewed. Their impact on device performance and future potential is discussed. Basic chemistry and mechanisms of plasma etching. DANIELL. FLAMM, VINCENT M. DONNELLY and DALE E. IBBOTSON. Semiconductor Int., 136 (April 1983). A recent review of plasma etching is extended with discussions of similarity variables governing discharges, anisotropic oxide etching in fluorine and unsaturate-rich plasmas, surface texture, the loading effect and gas-surface reactions. VLSI polysilicon etching: a comparison of different techniques. ULRICH WINKLER. Solid St. Technol., 169 (April 1983). Confusion exists to a certain extent on how best to solve polysilicon etching problems. Questions about single water or batch etching, fluorine or chlorine based process chemistry are raised and need answers. A critical discussion of the advantages and drawbacks of the most important methods for potysilicon etching is presented. Aspects such as anisotropy, selectivity, throughput and cost efficiency are investigated. A guideline to the optimum solution is given. Precise MMIC parameters yielded by 18-GHz wafer probe. K. R. GLEASON,T. M. REEDER and E. W. STRID. Microwave Syst. News 55 (1983). Wafer probing overcomes problems in variations in the die mounting, wire-bonding, package characteristics, and coax-to-microstrip transitions that limit the accuracy to which MMIC devices can be measured.
World Abstracts on Microelectronics and Reliability
Clean room garments: where from here? MARK S. DAHLSTROM. Semiconductor Int., 110 (April 1983). The clean room garment is of great importance to many industries today. In fact, it can mean the economic survival of a company. Advances in silicon technology for the semiconductor industry, Part I. ROBERT B. SWAROOP. Solid St. Technol., 111 (June 1983). The semiconductor industry is becoming stringent on silicon material requirements as the device fabrication technology changes from LSI to VLSI. This paper briefly reviews methods for coping with these requirements: crystal growing technology, oxygen control, and intrinsic and extrinsic gettering in silicon. Trends in semi-custom integrated circuits--an overview. A. PYNE. Microelectron. J. 14 (3), 5 (1983). The semi-custom market is one of the fastest growing. Nearly all of the major semiconductor manufacturers are now offering a semi-custom service and with the comparatively low cost of the device (compared to full custom) many OCMs now see this as a way of bringing their design up-to-date without incurring the enormous costs of the more conventional way, using standard or custom devices. 5. M I C R O E L E C T R O N I C S - - D E S I G N
Lithography steps ahead to meet the VLSI challenge. JERRY LYMAN. Electronics, 121 (14 July 1983). Optical systems still dominate production, while two X-ray units go commercial and ion-beam gear waits in the wings. Chip architecture: a revolution brewing. FRED GUTERL. IEEE Spectrum 30 (July 1983). Seeking to tailor new micros to challenging applications, designers are scrutinizing entrenched mainframe concepts as never before. What makes CMOS run? ROGERDETTMER.Electronics Power, 547 (July/August 1983). CMOS logic has traditionally been restricted to low-speed applications. The new high-speed CMOS family has the speed to match LSTTL, and promises to become the most popular logic family available. Important considerations in selecting anisotropic plasma etching equipment. S. BROYDO. Solid St. Technol., 159 (April 1983). Some important aspects of plasma physics and chemistry affecting the parameters characterizing plasma etching processes, e.g. anisotropy, selectivity, uniformity and reproducibility are examined. The connection between these parameters and features of the etching equipment available on the market are established. This information should help the engineer judge the ability of a specific plasma etching process within a given machine to satisfy his requirements for integrated circuit fabrication. High-pressure oxidation in n-channel MOS technology. E BUSSMANN.Semiconductor Int., 162 (April 1983). Experiments suggest that high-pressure field oxidation may represent the most favourable fabrication process. Silicon epitaxial wafer profiling using the mercury-silicon Schottky diode differential capacitance method. PHIL1P S. SCHAFFER and THOMAS R. LALLY. Solid St. Technol., 229 (April 1983). A reliable method is needed to characterize doping profiles of silicon epitaxial wafers as an in-process production tool. A technique is discussed which is very accurate, reproducible, rapid, non-destructive, and allows many areas across a wafer to be characterized. With this technique, every epitaxial run can be evaluated for dopant concentration prior to producing the succeeding run. The substrate/epitaxial layer interface can also be evaluated for many combinations of carrier concentration and thickness. Many of the critical preparation and calibration techniques
Silicon and hybrid micro-electronic sensors. S. MIDDELHOEK, D. J. W. NOORLAG and G. K. STEENVOORDEN. Electrocomponent Sci. Te~hnol. 10, 217 (1983). The penetration of micro-electronics into new markets is seriously hampered by the lack of efficient, low-cost sensors, It is not surprising therefore to find that these devices are the subject of research in many laboratories. This paper gives a review of the most important sensors which are fabricated in silicon planar or hybrid technology. The review is preceded by some general considerations with respect to measurement systems and signal conversion. The changing face of engineering. Electronics, 125 (31 May 1983). Harnessing computer power in chips has wrought a revolution in the way electronics engineers work, and to flourish, they must cope with the ongoing challenges of software and systems design. CAD systems: meeting the challenge of VLSI design. Semiconductor Int., 60 (March 1983). To keep pace within the semiconductor industry IC manufacturers find themselves relying upon CAD systems. CAD systems offer the user significant productivity improvements. AND
CONSTRUCTION
are described, which, if not performed properly, will lead to erroneous results.
Recent advances in hetero-epitaxial silicon-on-insulator technology. Part I. ANIL GUPTA and PRAHALAD K. VASUDEV. Solid St. Technol., 104 (February 1983). Silicon-on sapphire (SOS) has matured as the primary hetero-epitaxial siliconon-insulator technology for fabricating integrated circuits. Recent advances in the growth, characterization and processing of SOS material for commercial and military VLSI applications are reviewed. A major deficiency preventing the realization of the full potential of SOS technology has been the quality of the as-grown epitaxial Si film. Crystallinity, chemical impurities and electrical properties of SOS films are evaluated by both destructive and non-destructive measurement techniques. Their advantages and limitations are analysed. Material improvement processes, such as laser annealing, solid-phase epitaxial regrowth and optimization of epitaxial growth conditions, are reviewed. Their impact on device performance and future potential is discussed. Basic chemistry and mechanisms of plasma etching. DANIELL. FLAMM, VINCENT M. DONNELLY and DALE E. IBBOTSON. Semiconductor Int., 136 (April 1983). A recent review of plasma etching is extended with discussions of similarity variables governing discharges, anisotropic oxide etching in fluorine and unsaturate-rich plasmas, surface texture, the loading effect and gas-surface reactions. VLSI polysilicon etching: a comparison of different techniques. ULRICH WINKLER. Solid St. Technol., 169 (April 1983). Confusion exists to a certain extent on how best to solve polysilicon etching problems. Questions about single water or batch etching, fluorine or chlorine based process chemistry are raised and need answers. A critical discussion of the advantages and drawbacks of the most important methods for potysilicon etching is presented. Aspects such as anisotropy, selectivity, throughput and cost efficiency are investigated. A guideline to the optimum solution is given. Precise MMIC parameters yielded by 18-GHz wafer probe. K. R. GLEASON,T. M. REEDER and E. W. STRID. Microwave Syst. News 55 (1983). Wafer probing overcomes problems in variations in the die mounting, wire-bonding, package characteristics, and coax-to-microstrip transitions that limit the accuracy to which MMIC devices can be measured.