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CMOS contacts and interconnects
World Abstracts on Microelectronics and Reliability Currents trends in VLSI materials. Part 2: dielectrics. J. K n ~ Elliot. Semiconductor int., 150 (April 1988). Newly developed dielectric materials are beneficial for step coverage and planarization techniques. SMT: today and tomorrow. SUSUMU SUZUKI. d. Electron. Engng Japan, 40 (February 1988). Surface-mounting technology is no longer the catch phrase it once was; today it is a reality. The newest need in manufacturing is the ability for high-density mounting, but as parts have become smaller to meet SMT, they have almost become too small to meet the needs of high-density mounting as they are currently manufactured. Therefore, new mounters and new parts are underway. Miniaturization of electronics and its limits. R. W. KEWS. I B M J. Res. Dev. 32, 24 (1988). The long-continued advance of the performance of information processing technologies has been based on miniaturization of components. The history of miniaturization is presented through examples. They suggest that limits proposed by Landauer in the 1960s will be reached in two or three decades. Choosing between parametric test instruments and systems. TERRY NAGY. Semiconductor int., 168 (April 1988). Equipment capabilities, applications, signal levels, degree of integration and cost restrictions are factors to consider. Considerations for the design of an SRAM with SOl technology. THEODOREW. HOUSTONand the TEXASINSTRUMENT'S SOl TEAM. IEEE Circuits Devices Mag., 8 (November 1987). Several exciting circuit opportunities are available as a result of recent advances in silicon-on-insulator (SO1) material. These include radiation-hardened memories for space applications, bipolar SOI, the combination of bipolar and CMOS on the same chip, and three-dimensional integration. With all these advances, the first significant application of SOI in operational systems appears most likely to be an SRAM using CMOS circuitry, designed for space applications. The requirements for a space-based memory are well matched to properties that can be provided by CMOS devices fabricated on SOl material. These requirements include hardness to gamma radiation (total-dose hardness) and resistance to upset from ionizing particles (SEU), in addition to the more usual requirements of high density, high speed, low power, and high reliability. Radiation-hardened memories are currently available using silicon-on-sapphire (SOS) material; however, signification improvements in performance parameters, as well as the density of these devices, are expected as a result of SOI material improvements. With the increased performance available from recent SO1 materials, it is important that devices are designed to take full advantage of these improve-
5. M I C R O E L E C T R O N I C S - - D E S I G N Today's plasma etch chemistries. PETER H. SINGER. Semiconductor int., 68 (March 1988). Fluorine and chlorine containing gases provide good anisotropy and selectivity, while maintaining high etch rate. CMOS contacts and interconnects. DALE M. BROWN. Semiconductor int., (April 1988). Reliability problems ofmultilayer aluminium metalization can be solved by the use of refractory metals at the lower levels. Upper coarser patterns of A1 alloys should be used for power busing. Current trends in VLSI materials. Part 1: conductor systems. J. KIEFER ELLIOTT. Semiconductor int., 46 (March 1988). New materials are being introduced for the manufacture of VLSI devices to increase yields and decrease manufacturing costs.
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ments, which, in some cases, requires unique design features, both in device and circuit. This paper addresses the design issues for application of SOI materials to SRAMs for the space environment. Although the discussion will center on those features unique to implementation of SOI material for space application, the advantages in performance projected for these devices are also attractive for the general market of high-performance SRAMs. Purposes of three-dimensional circuits. AKIRA TERAO and FERNAND VAN DE WIELE. IEEE Circuits Devices Mag., 31 (November 1987). Three-dimensional (3-D) circuitry is a recognized concept. With the advent of silicon-on-insulator (SOI) technologies, this idea is being realized using techniques such as laser recrystallization of polysilicon, which allows fabrication of active devices stacked in two or more layers. Since silicon is a well-known microelectronic material, progress has been very fast and some laboratories have already succeeded in producing three-dimensional circuit cells. In order to focus activity and rationally optimize products, technologists need to know the types of circuits required. This paper examines the problem from several points of view and tries to answer three fundamental questions: (1) What are the main advantages of 3-D circuitry? (2) What kind of circuits will yield best advantages? (3) Which technological problems have priority? Cooperative spirit guides European ehipmakers. ANN CHESTNUT. Semiconductor int., 114 (February 1988). European semiconductor manufacturers favor unified, collaborative efforts to compete effectively in world markets. Process simulation of submicron technologies. RIC~IARD B. FAIR and JOhN E. RosE. Semiconductor int., 72 (December 1987). The PREDICT program assists the advanced process engineer in developing a manufacturable product. The beauty of 'almost standard' VLSI. BILL KNAPP and KENYON MEI. IEEE Spectrum, 35 (February 1988). Midway between off-the-shelfand custom-designed integrated circuits, semistandard ICs offer proved designs that can be easily modified to provide for distinctive features. VLSI and AI are getting closer. GuY RABBAT.IEEE Circuits Devices Ma#., 15 (January 1988). This article considers VLSI from all its aspects: semiconductor, design, and system, VLSI is an interdisciplinary science that requires understanding of implementation techniques related to semiconductor processes and device, packaging, and system applications. Artificial intelligence has played a secondary role in VLSI in the past. This is no longer true in the future, and this article will attempt to highlight AI and its impact on VLSI.
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Mechanical stress reliability factors for packaging GaAs MMIC and LSIC components. RONALDP. VIDANO,DAVEW. PAANANEN, TOM H. MIERS, JULIE M. KRAUSE-SINGH, K. RICHARD AGRICOLA and RAY L. HAUSER. IEEE Trans. Compon. Hybrids mf# Technol. CHMT-12, 612 (1987). Microwave monolithic integrated circuits (GaAs-MMIC's) and large-scale integrated circuits (GaAs-LSIC's) are being used in advance ground, airborne, or space-based Systems having severe environmental and dynamic loads. GaAsMMIC and GaAs-LSIC chips are fragile because they are thin and large and also because GaAs is an inherently weak material. Data are provided for the, fracture stress (af) of GaAs monolithic circuits based upon starting GaAs materials, wafer-thinning procedures, chip-dicing methods, and chip size. Using strength data obtained for (1) four-
5. M I C R O E L E C T R O N I C S - - D E S I G N Today's plasma etch chemistries. PETER H. SINGER. Semiconductor int., 68 (March 1988). Fluorine and chlorine containing gases provide good anisotropy and selectivity, while maintaining high etch rate. CMOS contacts and interconnects. DALE M. BROWN. Semiconductor int., (April 1988). Reliability problems ofmultilayer aluminium metalization can be solved by the use of refractory metals at the lower levels. Upper coarser patterns of A1 alloys should be used for power busing. Current trends in VLSI materials. Part 1: conductor systems. J. KIEFER ELLIOTT. Semiconductor int., 46 (March 1988). New materials are being introduced for the manufacture of VLSI devices to increase yields and decrease manufacturing costs.
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ments, which, in some cases, requires unique design features, both in device and circuit. This paper addresses the design issues for application of SOI materials to SRAMs for the space environment. Although the discussion will center on those features unique to implementation of SOI material for space application, the advantages in performance projected for these devices are also attractive for the general market of high-performance SRAMs. Purposes of three-dimensional circuits. AKIRA TERAO and FERNAND VAN DE WIELE. IEEE Circuits Devices Mag., 31 (November 1987). Three-dimensional (3-D) circuitry is a recognized concept. With the advent of silicon-on-insulator (SOI) technologies, this idea is being realized using techniques such as laser recrystallization of polysilicon, which allows fabrication of active devices stacked in two or more layers. Since silicon is a well-known microelectronic material, progress has been very fast and some laboratories have already succeeded in producing three-dimensional circuit cells. In order to focus activity and rationally optimize products, technologists need to know the types of circuits required. This paper examines the problem from several points of view and tries to answer three fundamental questions: (1) What are the main advantages of 3-D circuitry? (2) What kind of circuits will yield best advantages? (3) Which technological problems have priority? Cooperative spirit guides European ehipmakers. ANN CHESTNUT. Semiconductor int., 114 (February 1988). European semiconductor manufacturers favor unified, collaborative efforts to compete effectively in world markets. Process simulation of submicron technologies. RIC~IARD B. FAIR and JOhN E. RosE. Semiconductor int., 72 (December 1987). The PREDICT program assists the advanced process engineer in developing a manufacturable product. The beauty of 'almost standard' VLSI. BILL KNAPP and KENYON MEI. IEEE Spectrum, 35 (February 1988). Midway between off-the-shelfand custom-designed integrated circuits, semistandard ICs offer proved designs that can be easily modified to provide for distinctive features. VLSI and AI are getting closer. GuY RABBAT.IEEE Circuits Devices Ma#., 15 (January 1988). This article considers VLSI from all its aspects: semiconductor, design, and system, VLSI is an interdisciplinary science that requires understanding of implementation techniques related to semiconductor processes and device, packaging, and system applications. Artificial intelligence has played a secondary role in VLSI in the past. This is no longer true in the future, and this article will attempt to highlight AI and its impact on VLSI.
AND
CONSTRUCTION
Mechanical stress reliability factors for packaging GaAs MMIC and LSIC components. RONALDP. VIDANO,DAVEW. PAANANEN, TOM H. MIERS, JULIE M. KRAUSE-SINGH, K. RICHARD AGRICOLA and RAY L. HAUSER. IEEE Trans. Compon. Hybrids mf# Technol. CHMT-12, 612 (1987). Microwave monolithic integrated circuits (GaAs-MMIC's) and large-scale integrated circuits (GaAs-LSIC's) are being used in advance ground, airborne, or space-based Systems having severe environmental and dynamic loads. GaAsMMIC and GaAs-LSIC chips are fragile because they are thin and large and also because GaAs is an inherently weak material. Data are provided for the, fracture stress (af) of GaAs monolithic circuits based upon starting GaAs materials, wafer-thinning procedures, chip-dicing methods, and chip size. Using strength data obtained for (1) four-