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(III–V) semiconductor interfaces
A123 Surface Science 168 (1986) 356-364 North-Holland, Amsterdam
COMPARISON BETWEEN METAL A N D ELECTROLYTE/(Ill-V) SEMICONDUCTOR INTERFACES Philippe ALLONGUE
and Hubert
CACHET
C.N.R.S., Physique des Liquides et Electrochimie, T22 ES, 4, place Jussieu, 75230 Paris Cedex 05, France Received ll) June 1985; accepted for publication 3 July 1985 Barrier formation at III-V semiconductor (SC)/redox electrolyte junctions is studied. It is found that the Fermi-level pinning due to the redox species in solution is much weaker than that evidenced for solid Schottky barriers. It is also shown that corrosion by water is able to pin the Fermi level of the SC: this is the main difficulty to compare SC/liquid and SC/metal interfaces.
Surface Science 168 (1986) 365--375 North-Holland, Amsterdam
FILM A N D INTERFACE PROPERTIES OF EPITAXIAL METAL/INSULATOR/SEMICONDUCTOR SYSTEMS FORMED BY.IONIZED CLUSTER BEAM DEPOSITION I. Y A M A D A ,
H. USUI,
H. INOKAWA*
and T. TAKAGI
hm Beam Engineering Experimental Laboratory:, Kyoto University, Sakyo, Kyoto 606, Japan Received lfl June 1985: accepted for publication 11 July 1985 Epitaxial A1 films on Si, GaAs, CaF~ and sapphire substrates were formed by ionized cluster beam (ICB) deposition. The thermal stability of the AI-Si interface has been examined by SEM, AES, RBS channeling, and electrical characterization. The results show that the epitaxial films have remarkable stability. Evaluation of these systems have shown that the film and interface stabilities depend critically upon the film structure. Structures involving epitaxial metal/ insulator/semiconductor systems prepared by ICB could bring about further advancements in miniaturization of semiconductor devices and improvements in device performance.
Surface Science 168 (1986) 376-385 North-Holland, Amsterdam
THEORETICAL INTERPRETATION OF SCHOTIFKY BARRIERS AND OHMIC CONTACTS Roland E. ALLEN
Department of Physics, Texas A&M University, College Station, Texas 77843, USA O t t o F. S A N K E Y
Department of Physics, Arizona State University, Tempe, Arizona 85287, USA and
COMPARISON BETWEEN METAL A N D ELECTROLYTE/(Ill-V) SEMICONDUCTOR INTERFACES Philippe ALLONGUE
and Hubert
CACHET
C.N.R.S., Physique des Liquides et Electrochimie, T22 ES, 4, place Jussieu, 75230 Paris Cedex 05, France Received ll) June 1985; accepted for publication 3 July 1985 Barrier formation at III-V semiconductor (SC)/redox electrolyte junctions is studied. It is found that the Fermi-level pinning due to the redox species in solution is much weaker than that evidenced for solid Schottky barriers. It is also shown that corrosion by water is able to pin the Fermi level of the SC: this is the main difficulty to compare SC/liquid and SC/metal interfaces.
Surface Science 168 (1986) 365--375 North-Holland, Amsterdam
FILM A N D INTERFACE PROPERTIES OF EPITAXIAL METAL/INSULATOR/SEMICONDUCTOR SYSTEMS FORMED BY.IONIZED CLUSTER BEAM DEPOSITION I. Y A M A D A ,
H. USUI,
H. INOKAWA*
and T. TAKAGI
hm Beam Engineering Experimental Laboratory:, Kyoto University, Sakyo, Kyoto 606, Japan Received lfl June 1985: accepted for publication 11 July 1985 Epitaxial A1 films on Si, GaAs, CaF~ and sapphire substrates were formed by ionized cluster beam (ICB) deposition. The thermal stability of the AI-Si interface has been examined by SEM, AES, RBS channeling, and electrical characterization. The results show that the epitaxial films have remarkable stability. Evaluation of these systems have shown that the film and interface stabilities depend critically upon the film structure. Structures involving epitaxial metal/ insulator/semiconductor systems prepared by ICB could bring about further advancements in miniaturization of semiconductor devices and improvements in device performance.
Surface Science 168 (1986) 376-385 North-Holland, Amsterdam
THEORETICAL INTERPRETATION OF SCHOTIFKY BARRIERS AND OHMIC CONTACTS Roland E. ALLEN
Department of Physics, Texas A&M University, College Station, Texas 77843, USA O t t o F. S A N K E Y
Department of Physics, Arizona State University, Tempe, Arizona 85287, USA and