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Compound index
S
~
INDEX
Ammonothermal synthesis 222 autoclave for 223 Amphoteric importes 105 Auger electron spectroscopy (AES) 5, 28, 29, 116-22, 132, 155 Avalanche photodiode 265-6, 343,
344, 347 Bridgman method (horizontal) 180 Bulk crystal growth limited review of pseudo-blnary III-V a11oys 172
Cells effusion 55 isothermal double 56 thermally linked 54 Closed tube transport 50 Compositional grading 316, 326 Congruent evaporation 17 Constitutional supercooling in Ga, In, P, As system 188 Crucible materials for transition metal silicides 277 Ni plated Cu-cold crucible 282 A1203, SiO 2 and BNC 294 ceramic Si2N 3 and BeO 277 open 51 PBN 52 Crystal perfection 58 for device performance 49 IV-VI epltaxial layers 55 Crystal quality, criteria by photodiode 63 Czochralski method 181, 277 modified for Y3FesO12 garnets 392-4
transition metal ~licides, cooled crucible 279 Ni-plated Cu cold crucible for nitrides 221
cold or 282
Deposition rate mass transport limited 312-13 mass transfer limited 312 reaction limited 312-13 Diffusion lengths of minority carrier in p-type InP and InGaAsP 362-3 Diodes low-high-low GaAs IMPATT 161 n+-p-p + GaAs 160 varactor 161 Dopants 40, 54, 127, 161 promising n-type in MBE 159 Double heterostructure lasers effect of gas-phase stoichiometry on room temperature In0.5Ga0.5P/GaAs 338 In GaAsP/InP optical micrographs of top surface 362 stained cross section 365-7 LED, InGaAsP-InP 264 room temperature cw laser 369 SEM micrograph of InGaAsP/InP 339-41 InGaP/GaAs/InGaP 335, 345 strain utilised to vary refractive index profile 354-5
Electron microprobe (EMP) 184, 187-8 Electron probe a n a l y s i s 176 Epitaxial IV-Vl devices 50 growth techniques 50 Etches thickness and uniformity measurements in Y3FeOI2 364
405
406
Subject Index
selective and growth in "Vee" and "Dovetail" grooves in InP 364 Etching channels or mesas 99 Evaporative techniques 51
Fibre optic devices and co~mmnication in InGaAsP alloys 251-2 match low-loss optical fibres 263 lasers 263 light emitting diodes (LED) 263, 266 Floating zone technique for refractory nitrides 22] for transmission metal silicides 277 methods for preparing rods 278 Furnace tantalum 52 "clamshell" resistance 315
Garnet crystals Yttrum iron garnet Y3FeOI2 377 Growth at high T from solution 377 solubility in lead-barium-borate melts 378 physical-chemical characteristics of melt solution 386 enthalpy of Y3Fe5OI2 dissolution 387 table of energy of evaporation of some melts 387 density, viscosity and electrical conductivity 388-91 spontaneous nucleation 39] growth, from seeds 392 into solution 392-3, 395-6 modified Czochralski pulling technique 392-4 morphology of rough surfaces 397 growth on orientated crystals 398-9
Hall mobilities n- and p-type InP and In0.77Ga0.23As0.5P0. 5 356, 360 Helium cryopumped vacuum systems ]17 Heteroepitaxy, lattice matched 57, 82 Heterojunctions 1, 8 wide range band gaps 251 Heterostructures D.H. lasers 50, 79, 85 IV-Vl laser 79 laser devices 136 lattice matched 49 multi-layer optically pumped laser 105 S.H. lasers 79 wave guide 98 High energy electron diffraction (HEED) 5, 29, 90, ]16
Hot wall technique 50 for IV-VI semi conductors 81, 83 Hydride method vapour phase epitaxy (VPE) for III-V compounds binary, ternary and quaternary (InGa) (ASP) alloys 309-370 thermodynamics 310 kinetics 312 effect of temperature and flow rate on growth rate GaAs 312-15, 326 reaction limited 313, 315 mass transport limited 313, 315 effect of gas flow rate 314 superlattice structures of GaAsP 320 binary and ternary alloys 320 growth parameters 325 table of typical growth conditions for binary alloys 325 substrate, perfection of preheat process 32 X-ray topography 322 optical photo InP 323 microstructure InGaP/GaAsP 325 composition flow rate for hydrogen 326, 328 gas-phase stoichiometry: electron diffusion length 334 effect on DH laser performance 338 table of effects on deep level concentration and minority carrier lifetime 339 lattice mismatch and variation of misfit dislocation morphology 329-30 mismatch as elastic strain 339, 342 LED and laser structures 326 reverse bias electric field devices 326 (microwave oscillators and avalanche photocathodes) GaAs/GaP transmission photocathode (0.6-0.9 ~m) 326 thickness and interface width limits 338 using secondary ion mass spectrometry (SIMS) 338, 340 surface continuity tests 339 SEM micrograph InGaAsP/InP D.H. laser 339, 341 photoluminescence intensity SEM 339-42 selective epitaxy 340 carbon masks 340 SIO 2 masks 343-5
In situ analytical equipment 15, 17, 90 diagnostic techniques 115 Interaction parameters a s for pseudo binary III-V alloy 174 model Bublik and Leikin for concentration dependence |75
Subject ImJeg used for calculating III-V phase diagrams 174 Interdiffusion coefficient 6 Integrated optical device (IOD) 95 growth technique problems 109 monolithic 96, 107 switches, modulators, detectors 108 tapered coupler by MBE I08 Ion gauge 28 Knudsen cells -type ovens
407
X-ray double c r y s t a l d i f f r a c t i o n study 259 Auger depth p r o f i l e study 259 e l e c t r i c a l p r o p e r t i e s 260 common dopants 261 deep traps 263 device a p p l i c a t i o n s 263 Light emitting diodes (LED) 263, 266 double h e t e r o s t r u c t u r e InGaAsP-InP 264 Load lock for M.BE 22, 24, 28
24 4
Lanthanide nitrides 210, 211 Lasers 263 cw 103 cw room temperature 369 cw single mode 95 diode 42, 50, 79 discrete 103 distributed feed-back (DFB) 50, 88 distributed Bragg reflection (DBR) 107 fabrication by MBE 75 heterostructure devices 136 IV-VI 79 single (SH) 50, 79 double (DH) I, 50, 79, 85, 103, 107, 110, 264, 335, 338,
339-41, 345, 354-5, 362, 365-7 homostructure 50, 87 injection 78 integration I05 significant mode discrimination 88 single mode injection I05 twin guide 108 Lattice constants match 55, 60 variation of energy gap 57 Lattice matched 182 mismatch, vary refractive index step 354-5 utilised in double heterostructure (DH) lasers 355 effects using photoluminescence (PL) 358-62 LEC pulling bulk crystals Gaxlnl-xPy Asl-y 179, 180 LED InGaAsP/InP 1.3~m edge emitting 3 6 9 1.15~m 264 Liquid phase epltaxy (LPE) 1, 87, 97 quaternary Gaylnl-yASl_yP alloys 251 growth of lattice 1hatched InGaAsP-InP 252, 257-9 lattice deformation and misfit dislocations 259
Marangoni convection 239 convective rolls 239 Melt and solution+growth of III-V alloys of the type AxIIIBI_xIIICyVDI_y v 175 Miscibility gaps in quaternary III-V alloys 173, 175 in pseudo-ternary III-V alloys 194, 195 Molecular Beam epitaxy (MBE) I, 97 as collimator 24 volume 15, 24 temperature 27 crucible materials 15, 26 design MBE systems 15 epitaxy control 27 instrumentation 17 film uniformity 24 flux uniformity 15 angular distribution 25, 27 control molecular beam 27 furnaces 17, 23 baffles 17, 23 contamination 27 materials 15 multiple 24 shutters 23 thermocouples 26 heat shielding 15 load lock 22, 24, 26 nipi crystal growth 155 apparatus 156 optoelectronic devices 49 mask openings 104 techniques 5 1 purity of source material 20 rectangular potential cells 105 semiconductor surface studies 115 shutters 15 source baffling 15, 26 substrate holders 15, 17, 21 £ n - 8 £ ~ cleaning 17, 28 vacuum system 15, 17, 19
Negative electron affinity
408
Subject Index
GaAs reflection photocathodes 366 GaAs/InGaP/GaP transmission photocathodes 366 Nipi crystals 145 apparatus 156 electronic properties 146 growth process 155 high power modulation 152 transport and optical properties 149 Nitrides crystal growth as function of the medium 207 formation methods 207 analysis 208 crystal growth 214 vapour phase sublimation 215 apparatus AIN 215 by transport TiN in HCI 216 AIN in AIF 218 TaON in NH3CI 219 crystallization during reaction 219 chemical vapour deposition method 219 direct nitriding 219 zone annealing 220 Liquid phase 221 Czochralski for Li3N 221 floating zone for refracting nitrides 221 metallic soution AI, Li and alkaline earth nitrides 221 molten salt 222 ~nothermal synthesis 222 Solid state 224 Table of methods for single crystals 225 structures with 4-fold co-ordination cations 208-II structures with 6-fold co-ordination cations 211-13 Nonstoichiometry 33 phase equilibria for binary semiconductors 35 stoichiometric deviation 40
Opto-electronic devices 49, 57, 65, 70, 72, 74, 89 In GaAsP-InP 259 quaternary III-V to extend spectral range 171 Optical waveguides 50, 75, 77, 97 3-dimensional 99 heterostructure 98 single and multistripe mesa I00 Overlayers 138 Oxidation of surfaces (MBE) 132
Patent literature, table of crystal growth of III-V alleys 19J Photodiodes cross-striped geometry for Pb barrier 67 lateral collection 74 low noise 49 recent developments 72 spectral detectivity with temperature 68 thin film IV-VI 65, 70 fast (-1.3 ~m) AlxGol_xSb epilayers on GaAs 196 avalanche type (APD) 265-6 1.0-l.5 ~m region 265-6 local fluctuations in composition 265 avalanche detectors InGaAsP/InP by SiO 2 mask technique 343-4 optical photograph 347
Photoemissionmethods 136 Photo-voltaic c.r. detectors 42 Photoluminescence effects (PL) 358 carrier concentration measurements 358 experimental set-up 360 half-width v Hall carrier concentration for InP 361 homogeneous quaternary III-V alloys 171 lattice mismatch effects 358-62 peaks for Gaxlnl_xPyASl_y 184, 186-7 Pseudo binary boundaries Gaxlnl_xPyAsl_y system 175, 177 Pseudo binary systems normal freezing distributions 179-80 (Gaxlnl-xAs, Gaxlnl-xP, InPyAsl-y, GaPyAsl-y) solution growth Gaxlnl_xP and GaPyASl_y table 190 Pseudo ternary III-V alloys 195 (AI, Ga, In/P, As, Sb) phase relations 198 normal freezing distributions 198 strain gradient v solidified weight fraction 198 bulk single crystals InAsvSbl-y by gradient freezing and z~ne levelling 195 For Gaxlnl_xAsl_y band gap variation at room temperature 175-6 crystals grown 181 effective distribution coefficients 178-82 photoluminescence peaks 184, 186-7 radial inhomogeneties 184 solidified weight fraction 179-180 For InGaxlnl_xSbl_y
~
INDEX
Ammonothermal synthesis 222 autoclave for 223 Amphoteric importes 105 Auger electron spectroscopy (AES) 5, 28, 29, 116-22, 132, 155 Avalanche photodiode 265-6, 343,
344, 347 Bridgman method (horizontal) 180 Bulk crystal growth limited review of pseudo-blnary III-V a11oys 172
Cells effusion 55 isothermal double 56 thermally linked 54 Closed tube transport 50 Compositional grading 316, 326 Congruent evaporation 17 Constitutional supercooling in Ga, In, P, As system 188 Crucible materials for transition metal silicides 277 Ni plated Cu-cold crucible 282 A1203, SiO 2 and BNC 294 ceramic Si2N 3 and BeO 277 open 51 PBN 52 Crystal perfection 58 for device performance 49 IV-VI epltaxial layers 55 Crystal quality, criteria by photodiode 63 Czochralski method 181, 277 modified for Y3FesO12 garnets 392-4
transition metal ~licides, cooled crucible 279 Ni-plated Cu cold crucible for nitrides 221
cold or 282
Deposition rate mass transport limited 312-13 mass transfer limited 312 reaction limited 312-13 Diffusion lengths of minority carrier in p-type InP and InGaAsP 362-3 Diodes low-high-low GaAs IMPATT 161 n+-p-p + GaAs 160 varactor 161 Dopants 40, 54, 127, 161 promising n-type in MBE 159 Double heterostructure lasers effect of gas-phase stoichiometry on room temperature In0.5Ga0.5P/GaAs 338 In GaAsP/InP optical micrographs of top surface 362 stained cross section 365-7 LED, InGaAsP-InP 264 room temperature cw laser 369 SEM micrograph of InGaAsP/InP 339-41 InGaP/GaAs/InGaP 335, 345 strain utilised to vary refractive index profile 354-5
Electron microprobe (EMP) 184, 187-8 Electron probe a n a l y s i s 176 Epitaxial IV-Vl devices 50 growth techniques 50 Etches thickness and uniformity measurements in Y3FeOI2 364
405
406
Subject Index
selective and growth in "Vee" and "Dovetail" grooves in InP 364 Etching channels or mesas 99 Evaporative techniques 51
Fibre optic devices and co~mmnication in InGaAsP alloys 251-2 match low-loss optical fibres 263 lasers 263 light emitting diodes (LED) 263, 266 Floating zone technique for refractory nitrides 22] for transmission metal silicides 277 methods for preparing rods 278 Furnace tantalum 52 "clamshell" resistance 315
Garnet crystals Yttrum iron garnet Y3FeOI2 377 Growth at high T from solution 377 solubility in lead-barium-borate melts 378 physical-chemical characteristics of melt solution 386 enthalpy of Y3Fe5OI2 dissolution 387 table of energy of evaporation of some melts 387 density, viscosity and electrical conductivity 388-91 spontaneous nucleation 39] growth, from seeds 392 into solution 392-3, 395-6 modified Czochralski pulling technique 392-4 morphology of rough surfaces 397 growth on orientated crystals 398-9
Hall mobilities n- and p-type InP and In0.77Ga0.23As0.5P0. 5 356, 360 Helium cryopumped vacuum systems ]17 Heteroepitaxy, lattice matched 57, 82 Heterojunctions 1, 8 wide range band gaps 251 Heterostructures D.H. lasers 50, 79, 85 IV-Vl laser 79 laser devices 136 lattice matched 49 multi-layer optically pumped laser 105 S.H. lasers 79 wave guide 98 High energy electron diffraction (HEED) 5, 29, 90, ]16
Hot wall technique 50 for IV-VI semi conductors 81, 83 Hydride method vapour phase epitaxy (VPE) for III-V compounds binary, ternary and quaternary (InGa) (ASP) alloys 309-370 thermodynamics 310 kinetics 312 effect of temperature and flow rate on growth rate GaAs 312-15, 326 reaction limited 313, 315 mass transport limited 313, 315 effect of gas flow rate 314 superlattice structures of GaAsP 320 binary and ternary alloys 320 growth parameters 325 table of typical growth conditions for binary alloys 325 substrate, perfection of preheat process 32 X-ray topography 322 optical photo InP 323 microstructure InGaP/GaAsP 325 composition flow rate for hydrogen 326, 328 gas-phase stoichiometry: electron diffusion length 334 effect on DH laser performance 338 table of effects on deep level concentration and minority carrier lifetime 339 lattice mismatch and variation of misfit dislocation morphology 329-30 mismatch as elastic strain 339, 342 LED and laser structures 326 reverse bias electric field devices 326 (microwave oscillators and avalanche photocathodes) GaAs/GaP transmission photocathode (0.6-0.9 ~m) 326 thickness and interface width limits 338 using secondary ion mass spectrometry (SIMS) 338, 340 surface continuity tests 339 SEM micrograph InGaAsP/InP D.H. laser 339, 341 photoluminescence intensity SEM 339-42 selective epitaxy 340 carbon masks 340 SIO 2 masks 343-5
In situ analytical equipment 15, 17, 90 diagnostic techniques 115 Interaction parameters a s for pseudo binary III-V alloy 174 model Bublik and Leikin for concentration dependence |75
Subject ImJeg used for calculating III-V phase diagrams 174 Interdiffusion coefficient 6 Integrated optical device (IOD) 95 growth technique problems 109 monolithic 96, 107 switches, modulators, detectors 108 tapered coupler by MBE I08 Ion gauge 28 Knudsen cells -type ovens
407
X-ray double c r y s t a l d i f f r a c t i o n study 259 Auger depth p r o f i l e study 259 e l e c t r i c a l p r o p e r t i e s 260 common dopants 261 deep traps 263 device a p p l i c a t i o n s 263 Light emitting diodes (LED) 263, 266 double h e t e r o s t r u c t u r e InGaAsP-InP 264 Load lock for M.BE 22, 24, 28
24 4
Lanthanide nitrides 210, 211 Lasers 263 cw 103 cw room temperature 369 cw single mode 95 diode 42, 50, 79 discrete 103 distributed feed-back (DFB) 50, 88 distributed Bragg reflection (DBR) 107 fabrication by MBE 75 heterostructure devices 136 IV-VI 79 single (SH) 50, 79 double (DH) I, 50, 79, 85, 103, 107, 110, 264, 335, 338,
339-41, 345, 354-5, 362, 365-7 homostructure 50, 87 injection 78 integration I05 significant mode discrimination 88 single mode injection I05 twin guide 108 Lattice constants match 55, 60 variation of energy gap 57 Lattice matched 182 mismatch, vary refractive index step 354-5 utilised in double heterostructure (DH) lasers 355 effects using photoluminescence (PL) 358-62 LEC pulling bulk crystals Gaxlnl-xPy Asl-y 179, 180 LED InGaAsP/InP 1.3~m edge emitting 3 6 9 1.15~m 264 Liquid phase epltaxy (LPE) 1, 87, 97 quaternary Gaylnl-yASl_yP alloys 251 growth of lattice 1hatched InGaAsP-InP 252, 257-9 lattice deformation and misfit dislocations 259
Marangoni convection 239 convective rolls 239 Melt and solution+growth of III-V alloys of the type AxIIIBI_xIIICyVDI_y v 175 Miscibility gaps in quaternary III-V alloys 173, 175 in pseudo-ternary III-V alloys 194, 195 Molecular Beam epitaxy (MBE) I, 97 as collimator 24 volume 15, 24 temperature 27 crucible materials 15, 26 design MBE systems 15 epitaxy control 27 instrumentation 17 film uniformity 24 flux uniformity 15 angular distribution 25, 27 control molecular beam 27 furnaces 17, 23 baffles 17, 23 contamination 27 materials 15 multiple 24 shutters 23 thermocouples 26 heat shielding 15 load lock 22, 24, 26 nipi crystal growth 155 apparatus 156 optoelectronic devices 49 mask openings 104 techniques 5 1 purity of source material 20 rectangular potential cells 105 semiconductor surface studies 115 shutters 15 source baffling 15, 26 substrate holders 15, 17, 21 £ n - 8 £ ~ cleaning 17, 28 vacuum system 15, 17, 19
Negative electron affinity
408
Subject Index
GaAs reflection photocathodes 366 GaAs/InGaP/GaP transmission photocathodes 366 Nipi crystals 145 apparatus 156 electronic properties 146 growth process 155 high power modulation 152 transport and optical properties 149 Nitrides crystal growth as function of the medium 207 formation methods 207 analysis 208 crystal growth 214 vapour phase sublimation 215 apparatus AIN 215 by transport TiN in HCI 216 AIN in AIF 218 TaON in NH3CI 219 crystallization during reaction 219 chemical vapour deposition method 219 direct nitriding 219 zone annealing 220 Liquid phase 221 Czochralski for Li3N 221 floating zone for refracting nitrides 221 metallic soution AI, Li and alkaline earth nitrides 221 molten salt 222 ~nothermal synthesis 222 Solid state 224 Table of methods for single crystals 225 structures with 4-fold co-ordination cations 208-II structures with 6-fold co-ordination cations 211-13 Nonstoichiometry 33 phase equilibria for binary semiconductors 35 stoichiometric deviation 40
Opto-electronic devices 49, 57, 65, 70, 72, 74, 89 In GaAsP-InP 259 quaternary III-V to extend spectral range 171 Optical waveguides 50, 75, 77, 97 3-dimensional 99 heterostructure 98 single and multistripe mesa I00 Overlayers 138 Oxidation of surfaces (MBE) 132
Patent literature, table of crystal growth of III-V alleys 19J Photodiodes cross-striped geometry for Pb barrier 67 lateral collection 74 low noise 49 recent developments 72 spectral detectivity with temperature 68 thin film IV-VI 65, 70 fast (-1.3 ~m) AlxGol_xSb epilayers on GaAs 196 avalanche type (APD) 265-6 1.0-l.5 ~m region 265-6 local fluctuations in composition 265 avalanche detectors InGaAsP/InP by SiO 2 mask technique 343-4 optical photograph 347
Photoemissionmethods 136 Photo-voltaic c.r. detectors 42 Photoluminescence effects (PL) 358 carrier concentration measurements 358 experimental set-up 360 half-width v Hall carrier concentration for InP 361 homogeneous quaternary III-V alloys 171 lattice mismatch effects 358-62 peaks for Gaxlnl_xPyASl_y 184, 186-7 Pseudo binary boundaries Gaxlnl_xPyAsl_y system 175, 177 Pseudo binary systems normal freezing distributions 179-80 (Gaxlnl-xAs, Gaxlnl-xP, InPyAsl-y, GaPyAsl-y) solution growth Gaxlnl_xP and GaPyASl_y table 190 Pseudo ternary III-V alloys 195 (AI, Ga, In/P, As, Sb) phase relations 198 normal freezing distributions 198 strain gradient v solidified weight fraction 198 bulk single crystals InAsvSbl-y by gradient freezing and z~ne levelling 195 For Gaxlnl_xAsl_y band gap variation at room temperature 175-6 crystals grown 181 effective distribution coefficients 178-82 photoluminescence peaks 184, 186-7 radial inhomogeneties 184 solidified weight fraction 179-180 For InGaxlnl_xSbl_y