- Email: [email protected]
Contents of vol. 129
336
CONTENTS
Park, Y. H., 309 Partlow, D. P., 1 Perry, A. J., 263 Petrocco, G., 151 Pignatel, G. U., 111
Sokolowska, A., 249 Solmi, S., 111 Sugi, M., 15 Sul~i~, S., L61
Watanabe, H., L65 Wauteiet, M., L67 Webb, A. P., 281 Wijgert, W. M. v. d., 239 Willemsen, M. F. C., 239 Willich, P., 79 Windischmann, H., 127
Tamai, N., L45 Taniguchi, Y., L45 Tansley, T. L., L75 Thomas, B. W. J., 231 Tura, J. M., 103
Queirolo, G., 111 Reichelt, K., 79 Sahoo, N. K., L71 Saito, M., 15 Shimizu, T., 227 Simi~, V., 315 ~kraba, Z., L61 Smith, J. F., 309
Yamazaki, I., L45 Yeh, J. L., 25 Yo|das, B. E., 1
Valkenburg, W. G. J, M., 239 Vancea, J., 181 Varela, M., 103
Zembutsu, S., 289 Ziegler, D., 35 Zogg, H., 329 Zold, F. T., 309
Warashina, H., L65
Contents of Vol. 129
OPTICS
ELECTRONICS AND
Formation of broad band antireflective coatings on fused silica for high power laser applications . B. E. Yoldas and D. P. Partlow (Pittsburgh, PA, U.S.A.) Modification of optical and photoelectric characteristics by vapour phase treatments in LangmuirBlodgett films of merocyanine dyes M. Sugi, M. Saito, T. Fukui and S. lizima (Ibaraki, Japan) .
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Dependence of structural and compositional characteristics of chromium metal films as a function of deposition rate during the fabrication of metal/insulator/semiconductor solar cells . . . . . . . A. H. Moharram, P. Panayotatos, J. L. Yeh, B. Lalevic and F. Cosandey (Piscataway, NJ, U.S.A.) Band gap energy and Urbach tail studies of amorphous, partially crystalline and polycrystalline tin dioxide J. Melsheimer and D. Ziegler (Berlin, F.R.G.) .
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1
15
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Optical constants of ZnSiAs 2 thin films grown by metal-organic chemical vapor deposition . . . . H. A. Naseem, L. C. Burton (Blacksburg, VA, U.S.A.) and J. E. Andrews, Jr. (Research Triangle Park, NC, U.S.A.)
49
Ion-implanted TiN films as diffusion barriers in silicon device technology . . . . . . . . . . . . . . A. Armigliato, M. Finetti, A. Garulli, S. Guerri, R. Lotti and P. Ostoja (Bologna, Italy)
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METALLURGICAL AND PROTECTIVE COATINGS
On the influence of thermal effects on internal stress measurements during and after deposition of silver, gold and copper films R. Koch and R. Abermann (Innsbruck, Austria) .
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The internal stress in thin silver, copper and gold films R. Abermann and R. Koch (Innsbruck, Austria)
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Stoichiometry and friction properties of sputtered MoSx layers . . . . . . . . . . . . . . . . . . . . H. Dimigen, H. H~ibsch, P. Willich (Hamburg, F.R.G.) and K. Reichelt (J01ich, F.R.G.)
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71 79
CONTENTS
337
PREPARATION AND CHARACTERIZATION Dynamics of the Si-Pt reaction under pulsed heat flow . . . . . . . . . . . . . . . . . . . . . . . . . E. D'Anna, G. Leggieri, A. Luches (Lecce, Italy) and G. Majni (Modena, Italy)
93
Indium thin films on metal-coated substrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E. Bertran, J. L. Morenza, J. Esteve, M. Varela, A. Figueras and J. M. Tura (Barcelona, Spain)
103
Damage recovery and dopant activation phenomena in heavily arsenic-implanted silicon . . . . . G. F. Cerofolini, P. Manini, L. Meda, G. U. Pignatel, G. Queirolo (Agrate, Italy), A. Garulli, E. Landi, S. Solmi (Bologna, Italy), F. Nava, G. Ottaviani (Modena, Italy) and M. Gallorini (Pavia, Italy)
111
A study of the microstructure of a-Si: H using spectroscopic ellipsometry measurements . . . . . . R. W. Collins, W. J. Biter, A. H. Clark and H. Windischmann (Cleveland, OH, U.S.A.)
127
A characterization study of platinum tin oxide films supported on AI203 . . . . . . . . . . . . . . . G. B. Hoflund, D. A. Asbury (Gainesville, FL, U.S.A.) and R. E. Gilbert (Lincoln, NE, U.S.A.)
139
GENERAL
FILM BEHAVIOUR
Calcium-doped yttrium iron garnet films for temperature sensors . . . . . . . . . . . . . . . . . . . A. D'Amico, P. De Gasperis, A. Grilli, A. Paoletti and G. Petrocco (Rome, Italy)
151
The atomic size effect in surface segregation . . . . . . . . . . . . . A. D. van Langeveld (Eindhoven, The Netherlands)
161
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LETTERS Vacuum-deposited films of 12-(1-pyrenyl)dodecanoic acid analysed by fluorescence spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Mitsuya, Y. Taniguchi (Tokyo, Japan), N. Tamai, I. Yamazaki (Okazaki, Japan) and H. Masuhara (Kyoto, Japan)
L45
Correction of the escape depth effect in sputter depth profiles . . . . . . . . . . . . . . . . . . . . . C. Palacio and J. M. Mart[nez-Duart (Madrid, Spain)
L49
Comments on B~k's model of the field-dependent mobility in organic layers . . . . . . . . . . . . . W. Mycielski (Lbd~., Poland)
L53
Evaporated epitaxial chromium films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. G. Cook (Ithaca, NY, U.S.A.)
L57
ELECTRONICS AND OPTICS Surface scattering of electrons in metals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Hoffmann, J. Vancea and U. Jacob (Regensburg, F.R.G.)
181
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195
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noise in thin metal films interacting with silicon substrates . . . . . . . . . . . . . . . . . . . R. W. Ben6, G. S. Lee and N. I. Cho (Austin, TX, U.S.A.)
Electrochemical studies of plasma-formed films of tin . . . . . . . . . . . . . . . . . . . . . . . . . . Y. M. Chen, T. J. O'Keefe and W. J. James (Rolla, MO, U.S.A.)
205
Effect of argon addition to SiCI4-H 2 mixtures on the optical properties of glow discharge silicon films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Bruno, P. Capezzuto and F. Cramarossa (Bari, Italy)
217
Hydrogen evolution and differential thermal analysis in amorphous and microcrystalline hydrogenated silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Kumeda, H. Komatsu and T. Shimizu (Kanazawa, Japan)
227
Polar Kerr effect in granular cobalt films for magneto-optic recording . . . . . . . . . . . . . . . . . R. Carey, D. M. Newman and B. W. J. Thomas (Coventry, Gt. Britain)
231
338
CO~a'EYTS
METALLURGICAL AND PROTECTIVECOATINGS On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers W. A. P. Claassen (Nijmegen, The Netherlands), W. G. J. M. Valkenburg, W. M. v. d. Wijgert and M. F. C. Willemsen (Eindhoven, The Netherlands) .
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The useful properties of TiNx-Ti coatings deposited onto drills at 500 K using the reactive pulse plasma method A. Michalski, A. Sokotowska (Warsaw, Poland) and S. Legutko (Pozna6, Poland) .
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239
249
The production of well-bonded gold films on silica using dynamic recoil mixing . . . . . . . . . . N. A. G. Ahmed (Manchester, Gt. Britain), J. S. Colligon and A. E. Hill (Salford, Gt. Britain)
255
Some characteristics of HfN coatings on cemented carbide substrates . . . . . . . . . . . . . . . . A. J. Perry, M. Gr6ssl and B. Hammer (Balzers, Liechtenstein)
263
PREPARATION AND CHARACTERIZATION Charging shifts of core level peaks in X-ray photoelectron studies of argon-ion-bombarded carbon films on glass substrates A. P. Webb, F. M. EI-Hossary, D. J. Fabian (Glasgow, Gt. Britain) and E. A. MaydellOndrusz (Guildford, Gt. Britain) .
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281
The growth of c-axis-oriented GaN films by d.c.-biased reactive sputtering . . . . . . . . . . . . . S. Zembutsu and M. Kobayashi (Ibaraki, Japan)
289
Columnar structure and texture of iron films prepared at various pressures . . . . . . . . . . . . . . K. Okamoto (Chiba, Japan), T. Hashimoto (Tottori, Japan), K. Hara, M. Kamiya (Kumamoto, Japan) and H. Fujiwara (Hiroshima, Japan)
299
Influences of d.c. bias on aluminum films prepared with a high rate magnetron sputtering cathode Y. H. Park, F. T. Zold and J. F. Smith (Orangeburg, NY, U.S.A.)
309
interface reactions of copper films with polycrystalline indium or antimony and single-crystal InSb substrates ;~. Marinkovi(~ and V. Simid (Belgrade, Yugoslavia) .
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Interaction of lead fluoride films with alkali halide substrates . . . . . . . . . . . . . . . . . . . . . . H. Bach (Mainz, F.R.G.), A. J. Bruce and J. A. Duffy (Aberdeen, Gt. Britain) A note on the epitaxial relationships of the BaF2/Si (111 ) heterostructure H. Zogg, P. Maier and M. Ospelt (Zurich, Switzerland)
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315 321
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329
LETTERS Epitaxial growth of ¢-SnO thin films on a sodium chloride substrate . . . . . . . . . . . . . . . . . V. Kraf,evec, Z. ~kraba (Ljubljana, Yugoslavia), M. Hudomalj (Tozd Upori ~entjernej, Yugoslavia) and S. Sul~,i~ (Cormons, Italy)
L61
Enhancement of the deposition rate of amorphous silicon by the application of magnetic f i e l d s . . H. Watanabe, H. Warashina and T. Nagashima (Miyagi, Japan)
L65
Laser-induced oxidation of thin tin films M. Wautelet, L. Baufay, M. C. Joliet and R. Andrew (Mons, Belgium)
L67
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Low loss ZrO~ films for optical applications in the UV region K. V. S. R. Apparao, N. K. Sahoo and T. C. Bagchi (Bombay, India) .
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L71
Oscillatory conductivity in adsorbate-saturated polycrystalline zinc oxide . . . . . . . . . . . . . . T. L. Tansley and D. F. Neely (North Ryde, Australia)
L75
Fine-domain spin-coated amorphous chalcogenide films . . . . . . . . . . . . . . . . . . . . . . . K. H. Norian (Bethlehem, PA, U.S.A.), G. C. Chern (Norristown, PA, U.S.A.) and I. Lauks (Princeton, PA, U.S.A.)
L79
AUTHOR INDEX
335
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CONTENTS
Park, Y. H., 309 Partlow, D. P., 1 Perry, A. J., 263 Petrocco, G., 151 Pignatel, G. U., 111
Sokolowska, A., 249 Solmi, S., 111 Sugi, M., 15 Sul~i~, S., L61
Watanabe, H., L65 Wauteiet, M., L67 Webb, A. P., 281 Wijgert, W. M. v. d., 239 Willemsen, M. F. C., 239 Willich, P., 79 Windischmann, H., 127
Tamai, N., L45 Taniguchi, Y., L45 Tansley, T. L., L75 Thomas, B. W. J., 231 Tura, J. M., 103
Queirolo, G., 111 Reichelt, K., 79 Sahoo, N. K., L71 Saito, M., 15 Shimizu, T., 227 Simi~, V., 315 ~kraba, Z., L61 Smith, J. F., 309
Yamazaki, I., L45 Yeh, J. L., 25 Yo|das, B. E., 1
Valkenburg, W. G. J, M., 239 Vancea, J., 181 Varela, M., 103
Zembutsu, S., 289 Ziegler, D., 35 Zogg, H., 329 Zold, F. T., 309
Warashina, H., L65
Contents of Vol. 129
OPTICS
ELECTRONICS AND
Formation of broad band antireflective coatings on fused silica for high power laser applications . B. E. Yoldas and D. P. Partlow (Pittsburgh, PA, U.S.A.) Modification of optical and photoelectric characteristics by vapour phase treatments in LangmuirBlodgett films of merocyanine dyes M. Sugi, M. Saito, T. Fukui and S. lizima (Ibaraki, Japan) .
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Dependence of structural and compositional characteristics of chromium metal films as a function of deposition rate during the fabrication of metal/insulator/semiconductor solar cells . . . . . . . A. H. Moharram, P. Panayotatos, J. L. Yeh, B. Lalevic and F. Cosandey (Piscataway, NJ, U.S.A.) Band gap energy and Urbach tail studies of amorphous, partially crystalline and polycrystalline tin dioxide J. Melsheimer and D. Ziegler (Berlin, F.R.G.) .
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1
15
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Optical constants of ZnSiAs 2 thin films grown by metal-organic chemical vapor deposition . . . . H. A. Naseem, L. C. Burton (Blacksburg, VA, U.S.A.) and J. E. Andrews, Jr. (Research Triangle Park, NC, U.S.A.)
49
Ion-implanted TiN films as diffusion barriers in silicon device technology . . . . . . . . . . . . . . A. Armigliato, M. Finetti, A. Garulli, S. Guerri, R. Lotti and P. Ostoja (Bologna, Italy)
55
METALLURGICAL AND PROTECTIVE COATINGS
On the influence of thermal effects on internal stress measurements during and after deposition of silver, gold and copper films R. Koch and R. Abermann (Innsbruck, Austria) .
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The internal stress in thin silver, copper and gold films R. Abermann and R. Koch (Innsbruck, Austria)
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Stoichiometry and friction properties of sputtered MoSx layers . . . . . . . . . . . . . . . . . . . . H. Dimigen, H. H~ibsch, P. Willich (Hamburg, F.R.G.) and K. Reichelt (J01ich, F.R.G.)
63
71 79
CONTENTS
337
PREPARATION AND CHARACTERIZATION Dynamics of the Si-Pt reaction under pulsed heat flow . . . . . . . . . . . . . . . . . . . . . . . . . E. D'Anna, G. Leggieri, A. Luches (Lecce, Italy) and G. Majni (Modena, Italy)
93
Indium thin films on metal-coated substrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E. Bertran, J. L. Morenza, J. Esteve, M. Varela, A. Figueras and J. M. Tura (Barcelona, Spain)
103
Damage recovery and dopant activation phenomena in heavily arsenic-implanted silicon . . . . . G. F. Cerofolini, P. Manini, L. Meda, G. U. Pignatel, G. Queirolo (Agrate, Italy), A. Garulli, E. Landi, S. Solmi (Bologna, Italy), F. Nava, G. Ottaviani (Modena, Italy) and M. Gallorini (Pavia, Italy)
111
A study of the microstructure of a-Si: H using spectroscopic ellipsometry measurements . . . . . . R. W. Collins, W. J. Biter, A. H. Clark and H. Windischmann (Cleveland, OH, U.S.A.)
127
A characterization study of platinum tin oxide films supported on AI203 . . . . . . . . . . . . . . . G. B. Hoflund, D. A. Asbury (Gainesville, FL, U.S.A.) and R. E. Gilbert (Lincoln, NE, U.S.A.)
139
GENERAL
FILM BEHAVIOUR
Calcium-doped yttrium iron garnet films for temperature sensors . . . . . . . . . . . . . . . . . . . A. D'Amico, P. De Gasperis, A. Grilli, A. Paoletti and G. Petrocco (Rome, Italy)
151
The atomic size effect in surface segregation . . . . . . . . . . . . . A. D. van Langeveld (Eindhoven, The Netherlands)
161
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LETTERS Vacuum-deposited films of 12-(1-pyrenyl)dodecanoic acid analysed by fluorescence spectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Mitsuya, Y. Taniguchi (Tokyo, Japan), N. Tamai, I. Yamazaki (Okazaki, Japan) and H. Masuhara (Kyoto, Japan)
L45
Correction of the escape depth effect in sputter depth profiles . . . . . . . . . . . . . . . . . . . . . C. Palacio and J. M. Mart[nez-Duart (Madrid, Spain)
L49
Comments on B~k's model of the field-dependent mobility in organic layers . . . . . . . . . . . . . W. Mycielski (Lbd~., Poland)
L53
Evaporated epitaxial chromium films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. G. Cook (Ithaca, NY, U.S.A.)
L57
ELECTRONICS AND OPTICS Surface scattering of electrons in metals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H. Hoffmann, J. Vancea and U. Jacob (Regensburg, F.R.G.)
181
"1
195
If'"
noise in thin metal films interacting with silicon substrates . . . . . . . . . . . . . . . . . . . R. W. Ben6, G. S. Lee and N. I. Cho (Austin, TX, U.S.A.)
Electrochemical studies of plasma-formed films of tin . . . . . . . . . . . . . . . . . . . . . . . . . . Y. M. Chen, T. J. O'Keefe and W. J. James (Rolla, MO, U.S.A.)
205
Effect of argon addition to SiCI4-H 2 mixtures on the optical properties of glow discharge silicon films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G. Bruno, P. Capezzuto and F. Cramarossa (Bari, Italy)
217
Hydrogen evolution and differential thermal analysis in amorphous and microcrystalline hydrogenated silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Kumeda, H. Komatsu and T. Shimizu (Kanazawa, Japan)
227
Polar Kerr effect in granular cobalt films for magneto-optic recording . . . . . . . . . . . . . . . . . R. Carey, D. M. Newman and B. W. J. Thomas (Coventry, Gt. Britain)
231
338
CO~a'EYTS
METALLURGICAL AND PROTECTIVECOATINGS On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers W. A. P. Claassen (Nijmegen, The Netherlands), W. G. J. M. Valkenburg, W. M. v. d. Wijgert and M. F. C. Willemsen (Eindhoven, The Netherlands) .
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The useful properties of TiNx-Ti coatings deposited onto drills at 500 K using the reactive pulse plasma method A. Michalski, A. Sokotowska (Warsaw, Poland) and S. Legutko (Pozna6, Poland) .
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239
249
The production of well-bonded gold films on silica using dynamic recoil mixing . . . . . . . . . . N. A. G. Ahmed (Manchester, Gt. Britain), J. S. Colligon and A. E. Hill (Salford, Gt. Britain)
255
Some characteristics of HfN coatings on cemented carbide substrates . . . . . . . . . . . . . . . . A. J. Perry, M. Gr6ssl and B. Hammer (Balzers, Liechtenstein)
263
PREPARATION AND CHARACTERIZATION Charging shifts of core level peaks in X-ray photoelectron studies of argon-ion-bombarded carbon films on glass substrates A. P. Webb, F. M. EI-Hossary, D. J. Fabian (Glasgow, Gt. Britain) and E. A. MaydellOndrusz (Guildford, Gt. Britain) .
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281
The growth of c-axis-oriented GaN films by d.c.-biased reactive sputtering . . . . . . . . . . . . . S. Zembutsu and M. Kobayashi (Ibaraki, Japan)
289
Columnar structure and texture of iron films prepared at various pressures . . . . . . . . . . . . . . K. Okamoto (Chiba, Japan), T. Hashimoto (Tottori, Japan), K. Hara, M. Kamiya (Kumamoto, Japan) and H. Fujiwara (Hiroshima, Japan)
299
Influences of d.c. bias on aluminum films prepared with a high rate magnetron sputtering cathode Y. H. Park, F. T. Zold and J. F. Smith (Orangeburg, NY, U.S.A.)
309
interface reactions of copper films with polycrystalline indium or antimony and single-crystal InSb substrates ;~. Marinkovi(~ and V. Simid (Belgrade, Yugoslavia) .
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Interaction of lead fluoride films with alkali halide substrates . . . . . . . . . . . . . . . . . . . . . . H. Bach (Mainz, F.R.G.), A. J. Bruce and J. A. Duffy (Aberdeen, Gt. Britain) A note on the epitaxial relationships of the BaF2/Si (111 ) heterostructure H. Zogg, P. Maier and M. Ospelt (Zurich, Switzerland)
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315 321
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329
LETTERS Epitaxial growth of ¢-SnO thin films on a sodium chloride substrate . . . . . . . . . . . . . . . . . V. Kraf,evec, Z. ~kraba (Ljubljana, Yugoslavia), M. Hudomalj (Tozd Upori ~entjernej, Yugoslavia) and S. Sul~,i~ (Cormons, Italy)
L61
Enhancement of the deposition rate of amorphous silicon by the application of magnetic f i e l d s . . H. Watanabe, H. Warashina and T. Nagashima (Miyagi, Japan)
L65
Laser-induced oxidation of thin tin films M. Wautelet, L. Baufay, M. C. Joliet and R. Andrew (Mons, Belgium)
L67
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Low loss ZrO~ films for optical applications in the UV region K. V. S. R. Apparao, N. K. Sahoo and T. C. Bagchi (Bombay, India) .
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L71
Oscillatory conductivity in adsorbate-saturated polycrystalline zinc oxide . . . . . . . . . . . . . . T. L. Tansley and D. F. Neely (North Ryde, Australia)
L75
Fine-domain spin-coated amorphous chalcogenide films . . . . . . . . . . . . . . . . . . . . . . . K. H. Norian (Bethlehem, PA, U.S.A.), G. C. Chern (Norristown, PA, U.S.A.) and I. Lauks (Princeton, PA, U.S.A.)
L79
AUTHOR INDEX
335
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