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Contents of vol. 158
344
Contents of Vol. 158
ELECTRONICS AND OPTICS Silicon thin films for optoetectronic temperature sensors . . . . . . . . . . . . . . . . . . . . . . . R. P. Agarwal (Roorkee, India), I. Kajanto and A. T. Friberg (Espoo, Finland)
1
Magnetization reversal model for vertical recording films . . . . . . . . . . . . . . . . . . . . . . . V. M. Fedosyuk, L. F. Ilyushenko, M. U. Sheleg and A. V. Boltushkin (Minsk, U.S.S.R.)
7
Electrical conductance and temperature coefficient of resistivity of double-layer films R. Dimmich (Wroc~'aw, Poland)
. . . . . . .
Conduction processes in inhomogeneous C d S e , T e ~ . , semiconductors . . . . . . . . . . . . . . . A. P. Belyaev and I. P. Kalinkin (Leningrad, U.S.S.R.)
13
25
METALLURGICAL AND PROTECTIVE COATINGS Characterization of cosputtered tungsten carbide thin films . . . . . . . . . . . . . . . . . . . . . . H.-Y. Yang, X.-A. Zhao and M.-A. Nicolet (Pasadena, CA, U.S.A.)
37
Cosputtered W-5C25 thin film diffusion barriers . . . . . . . . . . . . . . . . . . . . . . . . . . . . H.-Y. Yang, X.-A. Zhao and M.-A. Nicolet (Pasadena, CA, U.S.A.)
45
Solid lubricating fluorine-containing polymer film synthesized by perfiuoropolyether sputtering . I. Sugimoto and S. Miyake (Tokyo, Japan)
51
PREPARATION AND CHARACTERIZATION The oxidation of PtSi, Pt2Si and polycrystalline silicon in ultrahigh vacuum residual gas . . . . . . H. C. Swart, C. W. Louw and G. L. P. Berning (Bloemfontein, South Africa)
61
Preparation and characterization of some tin oxide films . . . . . . . . . . . . . . . . . . . . . . . . T. M. Uen, K. F. Huang, M. S. Chen and Y. S. Gou (Hsinchu, Taiwan)
69
Characterization of SrF 2 thin films and of SrFSInP structures . . . . . . . . . . . . . . . . . . . . A. S. Barri6re, A. Chaouki, G. Gevers, H. Guegan, C. Sribi (Talence, France), D. Bertault (Gradignan, France), C. Hauw (Talence, France) and P. Alnot (Orsay, France)
81
Polymer ceramic composite materials with high dielectric constants . . . . . . . . . . . . . . . . . D. K. Das-Gupta and K. Doughty (Bangor, U.K.)
93
Thermodynamic investigation of selective tungsten chemical vapour deposition: influence of growth conditions and gas additives on the selectivity in the fluoride process . . . . . . . . . . . . J.-O. Carlsson and A. H~rsta (Uppsala, Sweden)
107
f.c.c, niobium films grown by halide chemical vapour deposition on ultrasound-vibrating substrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Sasaki, M. Koyano, H. Negishi and M. Inoue (Hiroshima, Japan)
1 23
Quaternary equilibrium phase diagram for copper, indium, selenium and oxygen . . . . . . . . . . B. Haba and C. W. Bates, Jr., (Stanford, CA, U.S.A.)
133
Pressure stability in reactive magnetron sputtering . . . . . . . . . . . . . . . . . . . . . . . . . A. G. Spencer, R. P. Howson and R. W. Lewin (Loughborough, U.K.)
1 41
Equilibrium interaction potential and height of an argon adatom on an At(001 ) crystal surface . . P. M. Stoop and J. A. Snyman (Pretoria, South Africa)
1 51
LETTER Light bending and light confinement of isotopic boundaries A. A. Berezin (Hamilton, Ontario, Canada)
possibility of isotopic fiber optics .
L37
CONTENTS
345
ELECTRONICSAND OPTICS Magnetic and magnetoresistive properties of multilayered Permalloy thin films . . . . . . . . . . . M. Kitada and N. Shimizu (Tokyo, Japan)
167
Photoconductivity studies of indium/epindolidione/indium tin oxide sandwich cells . . . . . . . . D. S. Weiss and M. Burberry (Rochester, NY, U.S.A.)
175
Comparison of the electrical properties of polyirnide films containing surface metal oxide: cobalt oxide v s . tin oxide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. D. Rancourt, G. M. Porta and L. T. Taylor (Blacksburg, VA, U.S.A.)
1 89
The temperature dependence of electron emission from a discontinuous carbon film device between silver film electrodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H Araki and T. Hanawa (Osaka, Japan)
207
Density of states in a-Si: H, CI determined by space-charge-limited currents . . . . . . . . . . . . . T. Ligonzo, R. Murri, V Augelli and L. Schiavulli (Bari, Italy)
217
METALLURGICAL AND PROTECTIVECOATINGS Dependence of microstructure of Ti N coatings on their thickness . . . . . . . . . . . . . . . . . . . V. Valvoda, R. (~ern~,, R. Ku~el, Jr., J. Musil and V. Poulek (Prague, Czechoslovakia)
225
Deposition of hard carbon films by the r.f. glow discharge method . . . . . . . . . . . . . . . . . . K. Kobayashi, N. Mutsukura and Y. Machi (Tokyo, Japan)
233
PREPARATION AND CHARACTERIZATION Columnar structure of obliquely deposited iron films prepared at low substrate temperatures . . . K. Hara, M. Kamiya (Kumamoto, Japan), T. Hashimoto (Tottori, Japan), K. Okamoto (Chiba, Japan) and H. Fujiwara (Hiroshima, Japan)
239
Kinetics of growth of anodic oxide film on niobium in aqueous electrolyte . . . . . . . . . . . . . . R. K. Nigam, K. C. Singh and S. Maken (Rohtak, India)
245
The metastable C49 structure in sputtered TiSi 2 thin films . . . . . . . . . . . . . . . . . . . . . . . W. Bretschneider, G. Beddies (KarI-Marx-Stadt, G.D.R.) and R. Scholz (Halle, G.D.R.)
255
High rate jet plasma-assisted chemical vapour deposition . . . . . . . . . . . . . . . . . . . . . . . L. Bfirdo,~ and V. Du,~ek (Prague, Czechoslovakia)
265
A solution growth technique for the deposition of manganese sulphide thin film . . . . . . . . . . P Pramanik, M. A. Akhter and P. K. Basu (Kharagpur, India)
271
Preparation and electrochemical behaviour of some metal oxide films . . . . . . . . . . . . . . . . . W. A. Badawy and E. EI-Taher (Giza, Egypt)
277
Characterization of MoSe 2 thin films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Mallouky and J. C. Bern~de (Nantes, France)
285
Growth processes in amorphous metallic films: a computer simulation . . . . . . . . . . . . . . . . R. Manaila, A. Devenyi (Bucharest, Romania), P. B. Barna and G. Radnoczi (Budapest, Hungary)
299
GENERAL FILM BEHAVIOUR Local equilibrium model of morphological instabilities in chemical vapor deposition . . . . . . . . B. J. Palmer and R. G. Gordon (Cambridge, MA, U.S.A.)
313
LETTERS Optical properties of sputtered AIN films and coated GaAs . . . . . . . . . . . . . . . . . . . . . . . D.-H. Wang and L. Guo (Beiling, China)
L39
346
(ONrENTS
Screen-printed superconducting films of Y - B a - C u O . . . . . . . . . . . . . . . . . . . . . . . . . A. K. Gupta, V. S. Tomar, M. Johri, N. D. Kataria, S. K. Agarwal, B. Jayaram and A. V. Narlikar (New Delhi, India)
L45
Electromechanicat properties of thin VO2 films on polyimide substrates . . . . . . . . . . . . . . . M. O. Hakim, S. M. Babulanam and C. G. Granqvist (Gothenburg, Sweden)
L49
AUTHOR INDEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
343
Contents of Vol. 158
ELECTRONICS AND OPTICS Silicon thin films for optoetectronic temperature sensors . . . . . . . . . . . . . . . . . . . . . . . R. P. Agarwal (Roorkee, India), I. Kajanto and A. T. Friberg (Espoo, Finland)
1
Magnetization reversal model for vertical recording films . . . . . . . . . . . . . . . . . . . . . . . V. M. Fedosyuk, L. F. Ilyushenko, M. U. Sheleg and A. V. Boltushkin (Minsk, U.S.S.R.)
7
Electrical conductance and temperature coefficient of resistivity of double-layer films R. Dimmich (Wroc~'aw, Poland)
. . . . . . .
Conduction processes in inhomogeneous C d S e , T e ~ . , semiconductors . . . . . . . . . . . . . . . A. P. Belyaev and I. P. Kalinkin (Leningrad, U.S.S.R.)
13
25
METALLURGICAL AND PROTECTIVE COATINGS Characterization of cosputtered tungsten carbide thin films . . . . . . . . . . . . . . . . . . . . . . H.-Y. Yang, X.-A. Zhao and M.-A. Nicolet (Pasadena, CA, U.S.A.)
37
Cosputtered W-5C25 thin film diffusion barriers . . . . . . . . . . . . . . . . . . . . . . . . . . . . H.-Y. Yang, X.-A. Zhao and M.-A. Nicolet (Pasadena, CA, U.S.A.)
45
Solid lubricating fluorine-containing polymer film synthesized by perfiuoropolyether sputtering . I. Sugimoto and S. Miyake (Tokyo, Japan)
51
PREPARATION AND CHARACTERIZATION The oxidation of PtSi, Pt2Si and polycrystalline silicon in ultrahigh vacuum residual gas . . . . . . H. C. Swart, C. W. Louw and G. L. P. Berning (Bloemfontein, South Africa)
61
Preparation and characterization of some tin oxide films . . . . . . . . . . . . . . . . . . . . . . . . T. M. Uen, K. F. Huang, M. S. Chen and Y. S. Gou (Hsinchu, Taiwan)
69
Characterization of SrF 2 thin films and of SrFSInP structures . . . . . . . . . . . . . . . . . . . . A. S. Barri6re, A. Chaouki, G. Gevers, H. Guegan, C. Sribi (Talence, France), D. Bertault (Gradignan, France), C. Hauw (Talence, France) and P. Alnot (Orsay, France)
81
Polymer ceramic composite materials with high dielectric constants . . . . . . . . . . . . . . . . . D. K. Das-Gupta and K. Doughty (Bangor, U.K.)
93
Thermodynamic investigation of selective tungsten chemical vapour deposition: influence of growth conditions and gas additives on the selectivity in the fluoride process . . . . . . . . . . . . J.-O. Carlsson and A. H~rsta (Uppsala, Sweden)
107
f.c.c, niobium films grown by halide chemical vapour deposition on ultrasound-vibrating substrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M. Sasaki, M. Koyano, H. Negishi and M. Inoue (Hiroshima, Japan)
1 23
Quaternary equilibrium phase diagram for copper, indium, selenium and oxygen . . . . . . . . . . B. Haba and C. W. Bates, Jr., (Stanford, CA, U.S.A.)
133
Pressure stability in reactive magnetron sputtering . . . . . . . . . . . . . . . . . . . . . . . . . A. G. Spencer, R. P. Howson and R. W. Lewin (Loughborough, U.K.)
1 41
Equilibrium interaction potential and height of an argon adatom on an At(001 ) crystal surface . . P. M. Stoop and J. A. Snyman (Pretoria, South Africa)
1 51
LETTER Light bending and light confinement of isotopic boundaries A. A. Berezin (Hamilton, Ontario, Canada)
possibility of isotopic fiber optics .
L37
CONTENTS
345
ELECTRONICSAND OPTICS Magnetic and magnetoresistive properties of multilayered Permalloy thin films . . . . . . . . . . . M. Kitada and N. Shimizu (Tokyo, Japan)
167
Photoconductivity studies of indium/epindolidione/indium tin oxide sandwich cells . . . . . . . . D. S. Weiss and M. Burberry (Rochester, NY, U.S.A.)
175
Comparison of the electrical properties of polyirnide films containing surface metal oxide: cobalt oxide v s . tin oxide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . J. D. Rancourt, G. M. Porta and L. T. Taylor (Blacksburg, VA, U.S.A.)
1 89
The temperature dependence of electron emission from a discontinuous carbon film device between silver film electrodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . H Araki and T. Hanawa (Osaka, Japan)
207
Density of states in a-Si: H, CI determined by space-charge-limited currents . . . . . . . . . . . . . T. Ligonzo, R. Murri, V Augelli and L. Schiavulli (Bari, Italy)
217
METALLURGICAL AND PROTECTIVECOATINGS Dependence of microstructure of Ti N coatings on their thickness . . . . . . . . . . . . . . . . . . . V. Valvoda, R. (~ern~,, R. Ku~el, Jr., J. Musil and V. Poulek (Prague, Czechoslovakia)
225
Deposition of hard carbon films by the r.f. glow discharge method . . . . . . . . . . . . . . . . . . K. Kobayashi, N. Mutsukura and Y. Machi (Tokyo, Japan)
233
PREPARATION AND CHARACTERIZATION Columnar structure of obliquely deposited iron films prepared at low substrate temperatures . . . K. Hara, M. Kamiya (Kumamoto, Japan), T. Hashimoto (Tottori, Japan), K. Okamoto (Chiba, Japan) and H. Fujiwara (Hiroshima, Japan)
239
Kinetics of growth of anodic oxide film on niobium in aqueous electrolyte . . . . . . . . . . . . . . R. K. Nigam, K. C. Singh and S. Maken (Rohtak, India)
245
The metastable C49 structure in sputtered TiSi 2 thin films . . . . . . . . . . . . . . . . . . . . . . . W. Bretschneider, G. Beddies (KarI-Marx-Stadt, G.D.R.) and R. Scholz (Halle, G.D.R.)
255
High rate jet plasma-assisted chemical vapour deposition . . . . . . . . . . . . . . . . . . . . . . . L. Bfirdo,~ and V. Du,~ek (Prague, Czechoslovakia)
265
A solution growth technique for the deposition of manganese sulphide thin film . . . . . . . . . . P Pramanik, M. A. Akhter and P. K. Basu (Kharagpur, India)
271
Preparation and electrochemical behaviour of some metal oxide films . . . . . . . . . . . . . . . . . W. A. Badawy and E. EI-Taher (Giza, Egypt)
277
Characterization of MoSe 2 thin films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A. Mallouky and J. C. Bern~de (Nantes, France)
285
Growth processes in amorphous metallic films: a computer simulation . . . . . . . . . . . . . . . . R. Manaila, A. Devenyi (Bucharest, Romania), P. B. Barna and G. Radnoczi (Budapest, Hungary)
299
GENERAL FILM BEHAVIOUR Local equilibrium model of morphological instabilities in chemical vapor deposition . . . . . . . . B. J. Palmer and R. G. Gordon (Cambridge, MA, U.S.A.)
313
LETTERS Optical properties of sputtered AIN films and coated GaAs . . . . . . . . . . . . . . . . . . . . . . . D.-H. Wang and L. Guo (Beiling, China)
L39
346
(ONrENTS
Screen-printed superconducting films of Y - B a - C u O . . . . . . . . . . . . . . . . . . . . . . . . . A. K. Gupta, V. S. Tomar, M. Johri, N. D. Kataria, S. K. Agarwal, B. Jayaram and A. V. Narlikar (New Delhi, India)
L45
Electromechanicat properties of thin VO2 films on polyimide substrates . . . . . . . . . . . . . . . M. O. Hakim, S. M. Babulanam and C. G. Granqvist (Gothenburg, Sweden)
L49
AUTHOR INDEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
343