- Email: [email protected]
Crystal growing trends
World Abstracts on Microelectronics and Reliability after maintenance type 1P is called the improvement factor. A set of curves for the improvement factor as a function of cost for maintenance type 1P and age of the system is proposed. The cost rate for a system is formulated as a ratio of an average cost for a cycle (time between replacements) to an
787
average cycle length. An optimum number of type 1P maintenance actions before type 2P maintenance is obtained by minimizing the cost rate when the failure times are Weibull distributed. The optimum solutions are a function of improvement factors and predetermined upper limit of failure rate. •
4. M I C R O E L E C T R O N I C S - - G E N E R A L Crystal growing trends. PETERH. SINGER.Semiconductor int., 49 (August 1986). In both silicon and GaAs crystal growth, the trend is toward increased diameter and improved crystal purity and uniformity. Molecular beam epitaxy. PETER H. SINGER. Semiconductor int., 42 (October 1986). Modular system design, gas source technology and multi-wafer exposure techniques help to make MBE more production oriented.
The "growing" importance of MOCVD. PIETERBURGGRAAF. Semiconductor int., 46 (November 1986). Recent MOCVD
equipment improvements are bringing volume-run capabilities to established applications and MBE-like capabilities to research.
Changing market realities enhance the appeal of ASICs. IWAO SAGARA. J. Electron. Engng, 28 (October 1986). The electronics industry is about to face a time of radical conversion from the mass production of a small variety of products to limited production of a large variety of products. As this trend gathers momentum, ASICs will be used in ever greater quantities. Moreover, the rapid development of CAD systems has paved the way for practical use of ASICs.
5. M I C R O E L E C T R O N I C S - - D E S I G N AND C O N S T R U C T I O N Achieving future requirements in ULS1 gases. HUBERTBOYD. Semiconductor int., 72 (August 1986). IC manufacturers are expected to demand gas purity levels approaching 10 ppb in the coming years.
Copper ball bonding. LEE LEVINE and MICHAEL SHEAFFER. Semiconductor int., 126 (August 1986). Copper ball bonding may be a cost-effective alternative to traditional gold ball bonding.
Furnace atmosphere's effect on cofiring tungsten-alumina multilayer substrates. EDWARD A. HAYDUK JR., KERRY BERGER and BETH ANNE HASSLER. Solid St. Technol., 135 (September 1986). Alumina multilayer ceramic substrates containing tungsten conductor paths were fired in a hydrogen, nitrogen, and water vapor atmosphere and the amounts of hydrogen and water contained in the furnace atmosphere were varied. The effect of each atmosphere on the physical properties of the sintered alumina ceramic and tungsten conductor were monitored. Results showed that camber, density, porosity, and the ability to plate and braze can all be affected by the amount of hydrogen and water in the furnace atmosphere during sintering.
Multilayering with polyimide dielectric and metallo-organic conductors. P. H. NGUYEN,C. E. FALLETTAand F. R. Russo. Solid St. Technol., 117 (September 1986). Multilayering using a polyimide dielectric and screen printable metallo-organic conductors has been developed. Polyimide dielectric layers were applied by two methods: screen printing and spin coating. Screen printable polyimide dielectric materials were developed by adding proprietary fillers, thickeners and surfactants to commercially available polyimide solution. The effect of these additives on the dielectric properties of polyimide was studied. An optimum formulation was developed to give the same dielectric constant as that of pure polyimide. The other electrical properties such as insulation resistance and breakdown voltage were comparable to those of pure spin coated polyimide. Humidity and thermal shock tests indicated that the multilayer system is stable.
Excimer lasers: an emerging technology in semiconductor processing. THOMAS A. ZNOTINS. Solid St. Technol., 99 (September 1986). The excimer laser is proving to be a unique and versatile tool in many semiconductor processing
applications. A review of excimer laser technology is presented with emphasis on the performance specifications of these unit UV light sources. The means by which excimer lasers are able to extend the capabilities of present photobased processes is discussed and several new techniques are presented. Performance limitations are described and various operating issues are addressed.
Planning for inter-equipment transport automation. CHUCK MURRAY. Semiconductor int., 74 (September 1986). Automating the transfer of cassettes between pieces of process equipment requires a plan consistent with production goals.
Surface analysis technology. Part 2: instrumentation. PETER H. SINGER. Semiconductor int., 110 (August 1986). Advances in instrumentation are making analytical techniques such as AES, ESCA, SIMS and RBS even more powerful.
Improving yield in wafer slicing. DONALD E. SWANSON. Semiconductor int., 95 (August 1986). The trend in wafer slicing is toward improvements in quality and yield through advances in control of the wafering process.
Improving gas handling safety. CHUCK MURRAY. Semiconductor int., 60 (August 1986). Research into silane explosion potential has led to a series of changes in the philosophy and design of hazardous gas handling systems.
Total automation in wafer fabrication. SHOUSUKESHINODA. Semiconductor int., 86 (September 1986). Using computerprogrammed rail cars within Class 1 clean areas, NMB Semiconductor is operating an automated wafer fabrication plant.
Wafer probing. GREG BIESER and SCOTT McCLUSKEY. Semiconductor int., 48 (September 1986). Wafer probers, probe cards and functional test systems are the key elements of today's probing technology.
Solutions for "pump damaging" etch and CVD processes. PIETER BURGGRAAF.Semiconductor int., 66 (October 1986). Advances in vacuum systems have adddressed problems with plasma etching of aluminum and other processes that damage pumps.
787
average cycle length. An optimum number of type 1P maintenance actions before type 2P maintenance is obtained by minimizing the cost rate when the failure times are Weibull distributed. The optimum solutions are a function of improvement factors and predetermined upper limit of failure rate. •
4. M I C R O E L E C T R O N I C S - - G E N E R A L Crystal growing trends. PETERH. SINGER.Semiconductor int., 49 (August 1986). In both silicon and GaAs crystal growth, the trend is toward increased diameter and improved crystal purity and uniformity. Molecular beam epitaxy. PETER H. SINGER. Semiconductor int., 42 (October 1986). Modular system design, gas source technology and multi-wafer exposure techniques help to make MBE more production oriented.
The "growing" importance of MOCVD. PIETERBURGGRAAF. Semiconductor int., 46 (November 1986). Recent MOCVD
equipment improvements are bringing volume-run capabilities to established applications and MBE-like capabilities to research.
Changing market realities enhance the appeal of ASICs. IWAO SAGARA. J. Electron. Engng, 28 (October 1986). The electronics industry is about to face a time of radical conversion from the mass production of a small variety of products to limited production of a large variety of products. As this trend gathers momentum, ASICs will be used in ever greater quantities. Moreover, the rapid development of CAD systems has paved the way for practical use of ASICs.
5. M I C R O E L E C T R O N I C S - - D E S I G N AND C O N S T R U C T I O N Achieving future requirements in ULS1 gases. HUBERTBOYD. Semiconductor int., 72 (August 1986). IC manufacturers are expected to demand gas purity levels approaching 10 ppb in the coming years.
Copper ball bonding. LEE LEVINE and MICHAEL SHEAFFER. Semiconductor int., 126 (August 1986). Copper ball bonding may be a cost-effective alternative to traditional gold ball bonding.
Furnace atmosphere's effect on cofiring tungsten-alumina multilayer substrates. EDWARD A. HAYDUK JR., KERRY BERGER and BETH ANNE HASSLER. Solid St. Technol., 135 (September 1986). Alumina multilayer ceramic substrates containing tungsten conductor paths were fired in a hydrogen, nitrogen, and water vapor atmosphere and the amounts of hydrogen and water contained in the furnace atmosphere were varied. The effect of each atmosphere on the physical properties of the sintered alumina ceramic and tungsten conductor were monitored. Results showed that camber, density, porosity, and the ability to plate and braze can all be affected by the amount of hydrogen and water in the furnace atmosphere during sintering.
Multilayering with polyimide dielectric and metallo-organic conductors. P. H. NGUYEN,C. E. FALLETTAand F. R. Russo. Solid St. Technol., 117 (September 1986). Multilayering using a polyimide dielectric and screen printable metallo-organic conductors has been developed. Polyimide dielectric layers were applied by two methods: screen printing and spin coating. Screen printable polyimide dielectric materials were developed by adding proprietary fillers, thickeners and surfactants to commercially available polyimide solution. The effect of these additives on the dielectric properties of polyimide was studied. An optimum formulation was developed to give the same dielectric constant as that of pure polyimide. The other electrical properties such as insulation resistance and breakdown voltage were comparable to those of pure spin coated polyimide. Humidity and thermal shock tests indicated that the multilayer system is stable.
Excimer lasers: an emerging technology in semiconductor processing. THOMAS A. ZNOTINS. Solid St. Technol., 99 (September 1986). The excimer laser is proving to be a unique and versatile tool in many semiconductor processing
applications. A review of excimer laser technology is presented with emphasis on the performance specifications of these unit UV light sources. The means by which excimer lasers are able to extend the capabilities of present photobased processes is discussed and several new techniques are presented. Performance limitations are described and various operating issues are addressed.
Planning for inter-equipment transport automation. CHUCK MURRAY. Semiconductor int., 74 (September 1986). Automating the transfer of cassettes between pieces of process equipment requires a plan consistent with production goals.
Surface analysis technology. Part 2: instrumentation. PETER H. SINGER. Semiconductor int., 110 (August 1986). Advances in instrumentation are making analytical techniques such as AES, ESCA, SIMS and RBS even more powerful.
Improving yield in wafer slicing. DONALD E. SWANSON. Semiconductor int., 95 (August 1986). The trend in wafer slicing is toward improvements in quality and yield through advances in control of the wafering process.
Improving gas handling safety. CHUCK MURRAY. Semiconductor int., 60 (August 1986). Research into silane explosion potential has led to a series of changes in the philosophy and design of hazardous gas handling systems.
Total automation in wafer fabrication. SHOUSUKESHINODA. Semiconductor int., 86 (September 1986). Using computerprogrammed rail cars within Class 1 clean areas, NMB Semiconductor is operating an automated wafer fabrication plant.
Wafer probing. GREG BIESER and SCOTT McCLUSKEY. Semiconductor int., 48 (September 1986). Wafer probers, probe cards and functional test systems are the key elements of today's probing technology.
Solutions for "pump damaging" etch and CVD processes. PIETER BURGGRAAF.Semiconductor int., 66 (October 1986). Advances in vacuum systems have adddressed problems with plasma etching of aluminum and other processes that damage pumps.