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Current-voltage dependencies of heterogeneous semiconductor systems
250
World Abstracts on Microelectronics and Reliability
Quenching and annealing studies indicate that these absorptions are due to beryllium-hydrogen pairs, a direct analog to the beryllium-lithium pairs. Also a new series of absorptions has been found in samples which have a very high beryllium concentration. These lines at 298, 324 and 345 cm- ~ disappear after short anneals at elevated temperatures and are believed to be an accepter level associated with a more complex beryllium center.
Deposition and Auger analysis of deposited SiO2 on AlxGa~l_~As. I. WEISSMAN, G. ANTYPAS, R. GERLACH, V. HOFFMANand N. TAYLOR. Vacuum 24 (2) 81 (1974). The relevance of Auger analysis to compound device technology is discussed generally and with particular reference to silica on AlxGa~_~)As. Experimental procedures are described and results given. Current-voltage dependenciesof heterogeneous semiconductor systems. P. MAI~K and B. SANG LEE. J. Phys. Chem. Solids 35, 865 (1974). Computed current-voltage (J-V) dependencies of heterogeneous (powder) semiconductor systems reveal an anomalous dependence between the constantvoltage current J and the uncompensated donor (accepter) concentration N. Over a range of N(N~ < n < N2) of approximately one decade, J decreases by as much as four decades with increasing N. For N > N2, the grain Schottky barrier thickness d is less than the grain half-width 1/2, the grain surface potential V~is almost independent of N and the J - V dependence is superlinear. For N~ < N < N 2, d > 1/2, V~ decreases linearly with N, J increases strongly
with decreasing N and the J - V dependence is superlinear. For N < Nt, d > U2, V~ ,~ Vth(=kT/q) and J ~ NV. The phenomenon is used to account for some observed J- V dependencies with column lI-chalcogenide and ZnO powder semiconductor systems (electro-optic displays, electrophotographic receptors and heterogeneous catalysts).
Dislocation generation along swirls in dislocation-free silicon crystals. J. MATSUt and T. KAWAMURA. The 2nd Inter~d. Syrup. on Silicon Materials Science and Technoloyy, Chicago. May 1973 (Semiconductor Silicon 1973, Electrochem. See., N.J., 126-135 (1973). Preannealed or preoxidized dislocation-free float-zoned silicon wafers, free from mechanical damage, have been subjected to thermal oxidation by rapid heating and cooling. Numerous pairs of half-loop dislocations with a connecting dislocation combining two half-loops have been observed to coexist in the same region with Frank dislocation loops surrounding stacking fault Many of the half-loop dislocations were found to have a strain center midway in the connecting dislocation line The Burgers vector of either the half-loop or the strain center was different from that of the stacking fault. The configuration of half-loop pair was also determined. During the course of preoxidation of preannealing the interaction of fast diffusing impurities with the remaining strain center would subsequently give rise to half-loops generation. A pair of the half-loops might start at a strain center site decorated with copper atoms because of thermal stresses occurring during the course of the subsequent thermal oxidation.
8. THICK- AND THIN-FILM COMPONENTS, HYBRID CIRCUITS A N D MATERIALS Hybrid thick film circuits in the telecommnnieation industry. P. MOORE. IERE Conf. on Hybrid Microelectronics, Canterbury 3 (25-27 Sept. 1973). The basic technology of thick film is well established and documented, but this paper will review the progress made in applying thick film techniques to one particular sector of the electronics industry, namely the rapidly expanding field of portable telecommunications equipment. Over a period of only five years, this penetration has extended from two or three very simple retrofit modules in "pagers" to the point where complete equipments are based on the technology, an expansion requiring the development of new production techniques and an extremely close liaison between customer and supplier.
resistors are improved over resistors made from some present commercially available pastes.
Thin-film hybrid cireuits---l. J. H. FILSHIE and I. J. McGEF~. EEN (Apr./May 1974). The Thin Film Hybrid Microcircuit process described is based on an electron-beam-evaporated Ni-Cr/Au/SiOz film system on Coming 7059 glass substates, and utilises subtractive photolithography throughout.
Preparation and properties of plasma-anodized silicon dioxide films, D. L. PULFREY and J. J. H. RECHE. Solid St. Electro~. 17, 627 (1974). The preparation and properties of thin films of silicon dioxide formed at ~200°C by anodization in an RF plasma are described. A suitable procedure for obtaining good quality films is given along with information on the effects of film sputtering and internal stress build-up during anodization. Measurements on MOS capacitors utilising the plasma-grown oxide yielded information on oxide charges, Si-SiO2 interface state density, oxide premittivity, leakage resistance and film break-down strength. Additional measurements determined the physical properties of stochiometry, impurity content, refractive index and etching behaviour. The plasma-anodized films can be routinely grown to a quality comparable with the best thermally-grown oxides.
Thick film resistors with improved voltage stability. Y. TAKETA and M. HARADOME. IEEE Trans. Parts, Hybrids and Packaoing. PHP-10, (1) 74 (Mar. 1974). Thick film resistors have been prepared by adding glass frits to the conductive materials of the resistors. By this method, it is found that the resistance of the glass phases in the thick film resistors decreases, with a resulting decrease of voltage drift after applying high voltage pulses to the resistors. In addition, the electrical properties and stability of these
An int~rated ~ nmpeturesi~ive device with a hall l a s h probe. (Integrovan~ tenkovrstv~' magnetoodporovy prvok s Hallovou sondou na b/tze l n S b I Slaboproud~ obzor 34, (5) 207 (1974). (In Czechoslovakianl. The integrated device consists of a thin film field effect transistor and a thin film Hall probe supplying the gate of the FET by its Hall voltage. The paper discusses the structure of the device, its V/A characteristics and sensitivity under the influence of magnetic field.
World Abstracts on Microelectronics and Reliability
Quenching and annealing studies indicate that these absorptions are due to beryllium-hydrogen pairs, a direct analog to the beryllium-lithium pairs. Also a new series of absorptions has been found in samples which have a very high beryllium concentration. These lines at 298, 324 and 345 cm- ~ disappear after short anneals at elevated temperatures and are believed to be an accepter level associated with a more complex beryllium center.
Deposition and Auger analysis of deposited SiO2 on AlxGa~l_~As. I. WEISSMAN, G. ANTYPAS, R. GERLACH, V. HOFFMANand N. TAYLOR. Vacuum 24 (2) 81 (1974). The relevance of Auger analysis to compound device technology is discussed generally and with particular reference to silica on AlxGa~_~)As. Experimental procedures are described and results given. Current-voltage dependenciesof heterogeneous semiconductor systems. P. MAI~K and B. SANG LEE. J. Phys. Chem. Solids 35, 865 (1974). Computed current-voltage (J-V) dependencies of heterogeneous (powder) semiconductor systems reveal an anomalous dependence between the constantvoltage current J and the uncompensated donor (accepter) concentration N. Over a range of N(N~ < n < N2) of approximately one decade, J decreases by as much as four decades with increasing N. For N > N2, the grain Schottky barrier thickness d is less than the grain half-width 1/2, the grain surface potential V~is almost independent of N and the J - V dependence is superlinear. For N~ < N < N 2, d > 1/2, V~ decreases linearly with N, J increases strongly
with decreasing N and the J - V dependence is superlinear. For N < Nt, d > U2, V~ ,~ Vth(=kT/q) and J ~ NV. The phenomenon is used to account for some observed J- V dependencies with column lI-chalcogenide and ZnO powder semiconductor systems (electro-optic displays, electrophotographic receptors and heterogeneous catalysts).
Dislocation generation along swirls in dislocation-free silicon crystals. J. MATSUt and T. KAWAMURA. The 2nd Inter~d. Syrup. on Silicon Materials Science and Technoloyy, Chicago. May 1973 (Semiconductor Silicon 1973, Electrochem. See., N.J., 126-135 (1973). Preannealed or preoxidized dislocation-free float-zoned silicon wafers, free from mechanical damage, have been subjected to thermal oxidation by rapid heating and cooling. Numerous pairs of half-loop dislocations with a connecting dislocation combining two half-loops have been observed to coexist in the same region with Frank dislocation loops surrounding stacking fault Many of the half-loop dislocations were found to have a strain center midway in the connecting dislocation line The Burgers vector of either the half-loop or the strain center was different from that of the stacking fault. The configuration of half-loop pair was also determined. During the course of preoxidation of preannealing the interaction of fast diffusing impurities with the remaining strain center would subsequently give rise to half-loops generation. A pair of the half-loops might start at a strain center site decorated with copper atoms because of thermal stresses occurring during the course of the subsequent thermal oxidation.
8. THICK- AND THIN-FILM COMPONENTS, HYBRID CIRCUITS A N D MATERIALS Hybrid thick film circuits in the telecommnnieation industry. P. MOORE. IERE Conf. on Hybrid Microelectronics, Canterbury 3 (25-27 Sept. 1973). The basic technology of thick film is well established and documented, but this paper will review the progress made in applying thick film techniques to one particular sector of the electronics industry, namely the rapidly expanding field of portable telecommunications equipment. Over a period of only five years, this penetration has extended from two or three very simple retrofit modules in "pagers" to the point where complete equipments are based on the technology, an expansion requiring the development of new production techniques and an extremely close liaison between customer and supplier.
resistors are improved over resistors made from some present commercially available pastes.
Thin-film hybrid cireuits---l. J. H. FILSHIE and I. J. McGEF~. EEN (Apr./May 1974). The Thin Film Hybrid Microcircuit process described is based on an electron-beam-evaporated Ni-Cr/Au/SiOz film system on Coming 7059 glass substates, and utilises subtractive photolithography throughout.
Preparation and properties of plasma-anodized silicon dioxide films, D. L. PULFREY and J. J. H. RECHE. Solid St. Electro~. 17, 627 (1974). The preparation and properties of thin films of silicon dioxide formed at ~200°C by anodization in an RF plasma are described. A suitable procedure for obtaining good quality films is given along with information on the effects of film sputtering and internal stress build-up during anodization. Measurements on MOS capacitors utilising the plasma-grown oxide yielded information on oxide charges, Si-SiO2 interface state density, oxide premittivity, leakage resistance and film break-down strength. Additional measurements determined the physical properties of stochiometry, impurity content, refractive index and etching behaviour. The plasma-anodized films can be routinely grown to a quality comparable with the best thermally-grown oxides.
Thick film resistors with improved voltage stability. Y. TAKETA and M. HARADOME. IEEE Trans. Parts, Hybrids and Packaoing. PHP-10, (1) 74 (Mar. 1974). Thick film resistors have been prepared by adding glass frits to the conductive materials of the resistors. By this method, it is found that the resistance of the glass phases in the thick film resistors decreases, with a resulting decrease of voltage drift after applying high voltage pulses to the resistors. In addition, the electrical properties and stability of these
An int~rated ~ nmpeturesi~ive device with a hall l a s h probe. (Integrovan~ tenkovrstv~' magnetoodporovy prvok s Hallovou sondou na b/tze l n S b I Slaboproud~ obzor 34, (5) 207 (1974). (In Czechoslovakianl. The integrated device consists of a thin film field effect transistor and a thin film Hall probe supplying the gate of the FET by its Hall voltage. The paper discusses the structure of the device, its V/A characteristics and sensitivity under the influence of magnetic field.