- Email: [email protected]
Data for functional TiO2 embedded Silicon photodetectors under varying illumination and bias conditions
Data in brief 28 (2020) 104856
Contents lists available at ScienceDirect
Data in brief journal homepage: www.elsevier.com/locate/dib
Data Article
Data for functional TiO2 embedded Silicon photodetectors under varying illumination and bias conditions Khushbu R. Chauhan, Dipal B. Patel* Department of Physics, Lovely Professional University, Phagwara, Punjab, 144411, India
a r t i c l e i n f o
a b s t r a c t
Article history: Received 15 April 2019 Received in revised form 14 October 2019 Accepted 14 November 2019 Available online 21 November 2019
In this data in brief (DIB) article, major photodetector (PD) characteristics of anisotype (Ag/n-TiO2/p-Si/Al), isotype (Ag/n-TiO2/nSi/Ag) and M-S-M type (Ag/p-Si/Al) structures under reverse bias conditions ( 1 to 5 V) over a broad spectral region (300 e800 nm) have been presented. Critical figures of merit like current-voltage (IV), responsivity (R), detectivity (D), gain, sensitivity (S), linear dynamic range (LDR), normalized photo to dark current ratio (NPDR) and noise equivalent power (NEP) of TiO2 embedded Si PDs are presented in graphical forms. IeV characteristics of PDs under dark and monochromatic illuminations (365, 425, 515 and 600 nm) were acquired by using source measure unit (Kithley). Internal gain was deduced from photoresponse spectra which were recorded with the help of Potentiostat/Galvanostat (PGSTAT302N, Autolab) under monochromatic illumination at 100 Hz chopping frequency. Quantum efficiency instrument supplied by Optosolar was utilized to accurately measure the spectral responsivity and detectivity of PDs in wide spectral region (300 e1100 nm). Please refer our main article [1] to understand the role of functional nanocrystalline TiO2 films on the performance of the photodetectors. © 2019 The Authors. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons. org/licenses/by/4.0/).
Keywords: TiO2 nanocrystals Responsivity Detectivity Noise Sensitivity Gain Linear dynamic range (LDR)
DOI of original article: https://doi.org/10.1016/j.jallcom.2019.04.111. * Corresponding author. E-mail address: [email protected] (D.B. Patel). https://doi.org/10.1016/j.dib.2019.104856 2352-3409/© 2019 The Authors. Published by Elsevier Inc. This is an open access article under the CC BY license (http:// creativecommons.org/licenses/by/4.0/).
2
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Specifications Table Subject area More specific subject area Type of data How data was acquired
Data format Experimental factors Experimental features Data source location Data accessibility Related research article
Physics Silicon photodetectors graph, figure, table Photoresponse was recorded with the help of Potentiostat/Galvanostat, Spectral responsivity and detectivity measurements were performed by using QE instrument, IV characteristics were obtained by using source measure unit embedded with monochromatic light source. At the end, all the figures of merit were calculated by using the equations as in main manuscript [1]. Raw and Analyzed A thin layer of Ti was sputtered on n-Si and p-Si followed by vacuum annealing to form functional TiO2/Si junctions Three configurations of Si based photodetector were realized to compare their performance in a wide spectral region (UV-NIR) Gandhinagar, Gujarat, India Data is with this article K. R. Chauhan, D. B. Patel, Functional nanocrystalline TiO2 thin films for UV enhanced highly responsive Silicon photodetectors, J. Alloys Compd. 792 (2019) 968e975.
Value of the Data The data presented in this data article is of high importance to the researchers as well as industries working towards the development of highly sensitive, responsive, ultrafast, broadband Si photodetectors. Detailed figures of merit of three configurations of Si PDs under varying illumination and reverse bias conditions are quantitatively analyzed and graphically exemplified over broadband region. Spectral responsivity and detectivity are the key PD parameters to be used as ready reckoner to see the effect of functional TiO2 film on overall performance of Si PDs. Availability of the PDs data over a broadband range accelerates their direct integration in modern electronics and application based design of PDs can be directly chosen for the future developments.
1. Data Functioning of low electron affinity nanocrystalline TiO2 embedded Si PDs were studied in our recent article [1] in which Ag/n-TiO2/p-Si/Al anisotype junction was found to be most efficient amongst all PDs. This DIB article includes all the analyzed PD parameters which were utilized to get insight into a role of functional TiO2 film on the overall performance of each Si PDs. Briefly, to trace the exact contribution of a thin TiO2 layer, performance of Ag/n-TiO2/p-Si/Al was compared with Ag/p-Si/Al and hence responsivity (R) and detectivity (D) of such devices (D1 and D3) are presented in Figs. 1 and 2, respectively. Fig. 1 shows the variation in responsivity (in A/W) of the PDs with varying bias under the illumination of typically selected wavelengths. Viz., 360, 400, 500, 600 and 700 nm representing UV, blue, green, red and near infrared (NIR) regions, respectively. Detectivity (in Jones) variation of such devices is shown in Fig. 2 in the form of bar charts for the mentioned lights and reverse bias conditions. Photocurrent gain for all three configurations of Si PDs are presented in Fig. 3 consecutively from left to right for the devices Ag/n-TiO2/p-Si/Al (D1), Ag/n-TiO2/n-Si/Ag (D2) and Ag/p-Si/Al (D3), respectively. Enhancement in the photocurrent against the dark current of each PD while operated in the reverse bias can be readily looked into from these graphs. Sensitivity of any PD believed to be one of the most crucial figures of merit and thus Fig. 4 includes the sensitivity data of each PD under the monochromatic illumination from broad spectral range. Fig. 5 shows very important behavior of PDs in the form of linear dynamic range which signifies the degree of linearity in PD operation against its noise. It includes LDR response of all the devices operated under reverse bias and predefined illuminating wavelengths.
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
3
Fig. 1. Variation in responsivity with applied bias and illumination conditions.
Fig. 2. Variation in detectivity with applied bias and illumination conditions.
Fig. 3. Variation in photo-gain with applied bias and illumination conditions. B-spline function has been used to show the estimated trend of the gain for each device.
4
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Fig. 4. Variation in sensitivity with applied bias and illumination conditions.
Fig. 5. Variation in LDR with applied bias and illumination conditions.
Fig. 6. Variation in NPDR with applied bias and illumination conditions. B-spline function has been used to show the estimated trend of NPDR for each device.
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
5
Fig. 7. Variation in NEP with applied bias and illumination conditions. B-spline function has been used to show the estimated trend of NEP for each device.
Fig. 8. Recorded IV spectra of PDs under reverse bias upon illumination and dark conditions.
6
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Table 1 Responsivity of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to
5 V) conditions.
Responsivity (A/W) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
0.33 0.64 2.27 6.36 5.7
1.11 1.7 2.59 3.54 1.9
0.77 1.37 3.1 8.68 11.2
1.77 3.47 4.53 5.59 6
3.25 4.03 5.79 15.67 23.56
2.17 6.49 8.73 11.98 13
4.59 5.77 8.55 20.71 24.89
2.6 6.49 7.44 8.64 9.1
5.6 5.6 9.51 23.13 12.19
3.19 6.87 7.38 10.49 10.4
Table 2 Detectivity of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to
5 V) conditions.
Detectivity (1010 Jones) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
7.14 12.8 45.3 127 113
5.54 5.91 7.32 10 5.39
16.4 27.6 62 173 222
8.81 12.1 12.8 15.8 17
69.7 81.4 116 312 467
10.8 22.6 24.6 34.0 36.9
98.6 116 171 412 493
13 22.5 21 24.5 25.8
120 113 190 460 242
15.9 23.9 20.8 29.7 29.5
Table 3 Photogain of devices D1, D2 and D3 under varying illumination (UV, Blue, Green and Red) and bias ( 1 to
5 V) conditions.
Gain Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
1.04 5.24 15.83 39.69 45.65
0.46 1.45 8.44 16.77 20.68
23.80 18.20 16.91 24.64 17.07
3.13 19.60 49.18 58.69 60.43
2.89 11.08 21.87 22.29 22.71
2.59 8.39 9.30 9.76 11.02
3.68 30.03 28.01 28.83 28.92
1.23 5.51 13.39 16.41 16.85
6.70 15.47 13.53 14.54 15.56
3.55 16.51 41.53 45.60 46.61
1.79 7.24 17.61 19.78 19.96
7.18 13.62 13.40 14.42 15.30
Table 4 Sensitivity of devices D1, D2 and D3 under varying illumination (UV, Blue, Green and Red) and bias ( 1 to
5 V) conditions.
Sensitivity (102%) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
0.04 4.24 14.83 38.69 44.65
0.54 0.45 7.44 15.77 19.68
22.80 17.20 15.91 23.64 16.07
2.13 18.60 48.18 57.69 59.43
1.89 10.08 20.87 21.29 21.71
1.59 7.39 8.30 8.76 10.02
2.68 29.03 27.01 27.83 27.92
0.23 4.51 12.39 15.41 15.85
5.70 14.47 12.53 13.54 14.56
2.55 15.51 40.53 44.60 45.61
0.79 6.24 16.61 18.78 18.96
6.18 12.62 12.40 13.42 14.30
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
7
Table 5 LDR of devices D1, D2 and D3 under varying illumination (UV, Blue, Green and Red) and bias ( 1 to
5 V) conditions.
LDR (dB) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
0.4 14.4 24.0 32.0 33.2
6.7 3.2 18.5 24.5 26.3
27.5 25.2 24.6 27.8 24.6
9.9 25.8 33.8 35.4 35.6
9.2 20.9 26.8 27.0 27.1
8.3 18.5 19.4 19.8 20.8
11.3 29.6 28.9 29.2 29.2
1.8 14.8 22.5 24.3 24.5
16.5 23.8 22.6 23.3 23.8
11.0 24.4 32.4 33.2 33.4
5.1 17.2 24.9 25.9 26.0
17.1 22.7 22.5 23.2 23.7
Table 6 NPDR of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to
5 V) conditions.
NPDR (103 1/W) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
4.98 8.42 29.5 81.9 72.7
39.5 29.3 29.5 40.6 21.8
11.5 18.1 40.3 112 143
62.8 59.8 51.4 64.1 68.8
48.7 53.4 75.3 202 301
77.1 112 99.2 137 149
68.8 76.4 111 267 318
92.6 112 84.5 99.1 104
83.9 74.2 124 298 156
113 118 83.8 120 119
Table 7 NEP of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to NEP (10
13
Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
5 V) conditions.
W)
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
139 77.3 21.9 7.84 8.78
27 25.3 20.5 14.9 27.8
60.4 35.9 16 5.74 4.47
17 12.4 11.7 9.46 8.8
14.2 12.2 8.57 3.18 2.13
13.8 6.64 6.08 4.41 4.06
10.1 8.52 5.80 2.41 2.01
11.5 6.65 7.14 6.12 5.8
8.25 8.78 5.22 2.16 4.11
9.4 6.28 7.19 5.04 5.08
Quantitatively analyzed normalized photo to dark current ratio (NPDR) and noise equivalent power (NEP) are shown in Figs. 6 and 7, respectively. Variation in NPDR and NEP with applied bias is highly important to trace out the ability of designed PD in handling the noise level and thus enabling a quicker response to the actual signal. At the end, IV characteristics of each of the PDs under varying illumination and dark conditions are shown in Fig. 8. All the acquired raw data and analyzed figures of merit like responsivity, detectivity, gain, sensitivity, LDR, NPDR and NEP of designed PDs are given in Tables-1 to 7, respectively.
2. Experimental design, materials, and methods Monocrystalline Si wafers of p and n-type were used as substrates to fabricate PDs of the configurations discussed in the main manuscript [1]. Ohmic metal contacts on such Si wafers were obtained by sputtering thin layers of aluminum (Al) and silver (Ag), appropriately. High purity Ti (99.995% pure,
8
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Sigma Aldrich) was sputtered at constant power of 150 W and 5 mT working pressure with predefined Ar flow for 15 min. To convert Ti thin films into titanium dioxide (TiO2), Ti coated Silicon films were post treated in vacuum furnace at 700 C for 10 min. Acknowledgments Authors acknowledge administrative support from their current organization, Lovely Professional University, Phagwara, Punjab. Both the authors have contributed equally in this work. Conflict of Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. References [1] K.R. Chauhan, D.B. Patel, Functional nanocrystalline TiO2 thin films for UV enhanced highly responsive Silicon photodetectors, J. Alloy. Comp. 792 (2019) 968e975, https://doi.org/10.1016/j.jallcom.2019.04.111.
Contents lists available at ScienceDirect
Data in brief journal homepage: www.elsevier.com/locate/dib
Data Article
Data for functional TiO2 embedded Silicon photodetectors under varying illumination and bias conditions Khushbu R. Chauhan, Dipal B. Patel* Department of Physics, Lovely Professional University, Phagwara, Punjab, 144411, India
a r t i c l e i n f o
a b s t r a c t
Article history: Received 15 April 2019 Received in revised form 14 October 2019 Accepted 14 November 2019 Available online 21 November 2019
In this data in brief (DIB) article, major photodetector (PD) characteristics of anisotype (Ag/n-TiO2/p-Si/Al), isotype (Ag/n-TiO2/nSi/Ag) and M-S-M type (Ag/p-Si/Al) structures under reverse bias conditions ( 1 to 5 V) over a broad spectral region (300 e800 nm) have been presented. Critical figures of merit like current-voltage (IV), responsivity (R), detectivity (D), gain, sensitivity (S), linear dynamic range (LDR), normalized photo to dark current ratio (NPDR) and noise equivalent power (NEP) of TiO2 embedded Si PDs are presented in graphical forms. IeV characteristics of PDs under dark and monochromatic illuminations (365, 425, 515 and 600 nm) were acquired by using source measure unit (Kithley). Internal gain was deduced from photoresponse spectra which were recorded with the help of Potentiostat/Galvanostat (PGSTAT302N, Autolab) under monochromatic illumination at 100 Hz chopping frequency. Quantum efficiency instrument supplied by Optosolar was utilized to accurately measure the spectral responsivity and detectivity of PDs in wide spectral region (300 e1100 nm). Please refer our main article [1] to understand the role of functional nanocrystalline TiO2 films on the performance of the photodetectors. © 2019 The Authors. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons. org/licenses/by/4.0/).
Keywords: TiO2 nanocrystals Responsivity Detectivity Noise Sensitivity Gain Linear dynamic range (LDR)
DOI of original article: https://doi.org/10.1016/j.jallcom.2019.04.111. * Corresponding author. E-mail address: [email protected] (D.B. Patel). https://doi.org/10.1016/j.dib.2019.104856 2352-3409/© 2019 The Authors. Published by Elsevier Inc. This is an open access article under the CC BY license (http:// creativecommons.org/licenses/by/4.0/).
2
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Specifications Table Subject area More specific subject area Type of data How data was acquired
Data format Experimental factors Experimental features Data source location Data accessibility Related research article
Physics Silicon photodetectors graph, figure, table Photoresponse was recorded with the help of Potentiostat/Galvanostat, Spectral responsivity and detectivity measurements were performed by using QE instrument, IV characteristics were obtained by using source measure unit embedded with monochromatic light source. At the end, all the figures of merit were calculated by using the equations as in main manuscript [1]. Raw and Analyzed A thin layer of Ti was sputtered on n-Si and p-Si followed by vacuum annealing to form functional TiO2/Si junctions Three configurations of Si based photodetector were realized to compare their performance in a wide spectral region (UV-NIR) Gandhinagar, Gujarat, India Data is with this article K. R. Chauhan, D. B. Patel, Functional nanocrystalline TiO2 thin films for UV enhanced highly responsive Silicon photodetectors, J. Alloys Compd. 792 (2019) 968e975.
Value of the Data The data presented in this data article is of high importance to the researchers as well as industries working towards the development of highly sensitive, responsive, ultrafast, broadband Si photodetectors. Detailed figures of merit of three configurations of Si PDs under varying illumination and reverse bias conditions are quantitatively analyzed and graphically exemplified over broadband region. Spectral responsivity and detectivity are the key PD parameters to be used as ready reckoner to see the effect of functional TiO2 film on overall performance of Si PDs. Availability of the PDs data over a broadband range accelerates their direct integration in modern electronics and application based design of PDs can be directly chosen for the future developments.
1. Data Functioning of low electron affinity nanocrystalline TiO2 embedded Si PDs were studied in our recent article [1] in which Ag/n-TiO2/p-Si/Al anisotype junction was found to be most efficient amongst all PDs. This DIB article includes all the analyzed PD parameters which were utilized to get insight into a role of functional TiO2 film on the overall performance of each Si PDs. Briefly, to trace the exact contribution of a thin TiO2 layer, performance of Ag/n-TiO2/p-Si/Al was compared with Ag/p-Si/Al and hence responsivity (R) and detectivity (D) of such devices (D1 and D3) are presented in Figs. 1 and 2, respectively. Fig. 1 shows the variation in responsivity (in A/W) of the PDs with varying bias under the illumination of typically selected wavelengths. Viz., 360, 400, 500, 600 and 700 nm representing UV, blue, green, red and near infrared (NIR) regions, respectively. Detectivity (in Jones) variation of such devices is shown in Fig. 2 in the form of bar charts for the mentioned lights and reverse bias conditions. Photocurrent gain for all three configurations of Si PDs are presented in Fig. 3 consecutively from left to right for the devices Ag/n-TiO2/p-Si/Al (D1), Ag/n-TiO2/n-Si/Ag (D2) and Ag/p-Si/Al (D3), respectively. Enhancement in the photocurrent against the dark current of each PD while operated in the reverse bias can be readily looked into from these graphs. Sensitivity of any PD believed to be one of the most crucial figures of merit and thus Fig. 4 includes the sensitivity data of each PD under the monochromatic illumination from broad spectral range. Fig. 5 shows very important behavior of PDs in the form of linear dynamic range which signifies the degree of linearity in PD operation against its noise. It includes LDR response of all the devices operated under reverse bias and predefined illuminating wavelengths.
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
3
Fig. 1. Variation in responsivity with applied bias and illumination conditions.
Fig. 2. Variation in detectivity with applied bias and illumination conditions.
Fig. 3. Variation in photo-gain with applied bias and illumination conditions. B-spline function has been used to show the estimated trend of the gain for each device.
4
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Fig. 4. Variation in sensitivity with applied bias and illumination conditions.
Fig. 5. Variation in LDR with applied bias and illumination conditions.
Fig. 6. Variation in NPDR with applied bias and illumination conditions. B-spline function has been used to show the estimated trend of NPDR for each device.
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
5
Fig. 7. Variation in NEP with applied bias and illumination conditions. B-spline function has been used to show the estimated trend of NEP for each device.
Fig. 8. Recorded IV spectra of PDs under reverse bias upon illumination and dark conditions.
6
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Table 1 Responsivity of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to
5 V) conditions.
Responsivity (A/W) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
0.33 0.64 2.27 6.36 5.7
1.11 1.7 2.59 3.54 1.9
0.77 1.37 3.1 8.68 11.2
1.77 3.47 4.53 5.59 6
3.25 4.03 5.79 15.67 23.56
2.17 6.49 8.73 11.98 13
4.59 5.77 8.55 20.71 24.89
2.6 6.49 7.44 8.64 9.1
5.6 5.6 9.51 23.13 12.19
3.19 6.87 7.38 10.49 10.4
Table 2 Detectivity of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to
5 V) conditions.
Detectivity (1010 Jones) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
7.14 12.8 45.3 127 113
5.54 5.91 7.32 10 5.39
16.4 27.6 62 173 222
8.81 12.1 12.8 15.8 17
69.7 81.4 116 312 467
10.8 22.6 24.6 34.0 36.9
98.6 116 171 412 493
13 22.5 21 24.5 25.8
120 113 190 460 242
15.9 23.9 20.8 29.7 29.5
Table 3 Photogain of devices D1, D2 and D3 under varying illumination (UV, Blue, Green and Red) and bias ( 1 to
5 V) conditions.
Gain Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
1.04 5.24 15.83 39.69 45.65
0.46 1.45 8.44 16.77 20.68
23.80 18.20 16.91 24.64 17.07
3.13 19.60 49.18 58.69 60.43
2.89 11.08 21.87 22.29 22.71
2.59 8.39 9.30 9.76 11.02
3.68 30.03 28.01 28.83 28.92
1.23 5.51 13.39 16.41 16.85
6.70 15.47 13.53 14.54 15.56
3.55 16.51 41.53 45.60 46.61
1.79 7.24 17.61 19.78 19.96
7.18 13.62 13.40 14.42 15.30
Table 4 Sensitivity of devices D1, D2 and D3 under varying illumination (UV, Blue, Green and Red) and bias ( 1 to
5 V) conditions.
Sensitivity (102%) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
0.04 4.24 14.83 38.69 44.65
0.54 0.45 7.44 15.77 19.68
22.80 17.20 15.91 23.64 16.07
2.13 18.60 48.18 57.69 59.43
1.89 10.08 20.87 21.29 21.71
1.59 7.39 8.30 8.76 10.02
2.68 29.03 27.01 27.83 27.92
0.23 4.51 12.39 15.41 15.85
5.70 14.47 12.53 13.54 14.56
2.55 15.51 40.53 44.60 45.61
0.79 6.24 16.61 18.78 18.96
6.18 12.62 12.40 13.42 14.30
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
7
Table 5 LDR of devices D1, D2 and D3 under varying illumination (UV, Blue, Green and Red) and bias ( 1 to
5 V) conditions.
LDR (dB) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
D1
D2
D3
D1
D2
D3
D1
D2
D3
D1
D2
D3
0.4 14.4 24.0 32.0 33.2
6.7 3.2 18.5 24.5 26.3
27.5 25.2 24.6 27.8 24.6
9.9 25.8 33.8 35.4 35.6
9.2 20.9 26.8 27.0 27.1
8.3 18.5 19.4 19.8 20.8
11.3 29.6 28.9 29.2 29.2
1.8 14.8 22.5 24.3 24.5
16.5 23.8 22.6 23.3 23.8
11.0 24.4 32.4 33.2 33.4
5.1 17.2 24.9 25.9 26.0
17.1 22.7 22.5 23.2 23.7
Table 6 NPDR of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to
5 V) conditions.
NPDR (103 1/W) Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
4.98 8.42 29.5 81.9 72.7
39.5 29.3 29.5 40.6 21.8
11.5 18.1 40.3 112 143
62.8 59.8 51.4 64.1 68.8
48.7 53.4 75.3 202 301
77.1 112 99.2 137 149
68.8 76.4 111 267 318
92.6 112 84.5 99.1 104
83.9 74.2 124 298 156
113 118 83.8 120 119
Table 7 NEP of devices D1 and D3 under varying illumination (UV, Blue, Green, Red and NIR) and bias ( 1 to NEP (10
13
Applied Bias (V)
Wavelength (nm) 360
1 2 3 4 5
5 V) conditions.
W)
400
500
600
700
D1
D3
D1
D3
D1
D3
D1
D3
D1
D3
139 77.3 21.9 7.84 8.78
27 25.3 20.5 14.9 27.8
60.4 35.9 16 5.74 4.47
17 12.4 11.7 9.46 8.8
14.2 12.2 8.57 3.18 2.13
13.8 6.64 6.08 4.41 4.06
10.1 8.52 5.80 2.41 2.01
11.5 6.65 7.14 6.12 5.8
8.25 8.78 5.22 2.16 4.11
9.4 6.28 7.19 5.04 5.08
Quantitatively analyzed normalized photo to dark current ratio (NPDR) and noise equivalent power (NEP) are shown in Figs. 6 and 7, respectively. Variation in NPDR and NEP with applied bias is highly important to trace out the ability of designed PD in handling the noise level and thus enabling a quicker response to the actual signal. At the end, IV characteristics of each of the PDs under varying illumination and dark conditions are shown in Fig. 8. All the acquired raw data and analyzed figures of merit like responsivity, detectivity, gain, sensitivity, LDR, NPDR and NEP of designed PDs are given in Tables-1 to 7, respectively.
2. Experimental design, materials, and methods Monocrystalline Si wafers of p and n-type were used as substrates to fabricate PDs of the configurations discussed in the main manuscript [1]. Ohmic metal contacts on such Si wafers were obtained by sputtering thin layers of aluminum (Al) and silver (Ag), appropriately. High purity Ti (99.995% pure,
8
K.R. Chauhan, D.B. Patel / Data in brief 28 (2020) 104856
Sigma Aldrich) was sputtered at constant power of 150 W and 5 mT working pressure with predefined Ar flow for 15 min. To convert Ti thin films into titanium dioxide (TiO2), Ti coated Silicon films were post treated in vacuum furnace at 700 C for 10 min. Acknowledgments Authors acknowledge administrative support from their current organization, Lovely Professional University, Phagwara, Punjab. Both the authors have contributed equally in this work. Conflict of Interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. References [1] K.R. Chauhan, D.B. Patel, Functional nanocrystalline TiO2 thin films for UV enhanced highly responsive Silicon photodetectors, J. Alloy. Comp. 792 (2019) 968e975, https://doi.org/10.1016/j.jallcom.2019.04.111.