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Si contacts and an extremely stable metallization system
594
World Abstracts on Microelectronics and Reliability
and linewidths of the resonances as well as effective correlation energies of the corresponding energy states are compared for both materials. It is shown that the existing large differences of these quantities between a-Si:H and a-Ge : H can be explained by the differences of spin orbit coupling and degree of localization,
Epitaxial reactor systems: characteristics, operation and epitaxy costs. G. W. CULLEN, J. F. CORBO¥ and R. METZL. RCA Rev. 44, 187 (June 1983). In this paper we discuss the design and operating characteristics of various homoepitaxial reactor systems now being employed in the semiconductor industry. The parameters available for control of the deposit characteristics, specifically as related to the reactor configurations, are outlined. The current technology of slip control through rf-heated susceptor design is reviewed. The very significant advantages associated with reduced-pressure epitaxial growth are presented. The throughputs and costs involved in each reactor are analyzed, Finally, we make some predictions concerning the future trends of development in epitaxial reactor technology,
Developments in Czoehralski silicon crystal growth. JERRY W. MooDY and ROGER A. FREDERICK. Solid St. Technol. 221 (August 1983). If past trends can be used as a guide, then "'bigger and better" are the watchwords for future Czochralski silicon development--bigger in the sense of larger diameter crystals from larger charge sizes; better in terms of improved homogeneity and control of impurities and defects. The economics associated with large diameter wafers and the homogeneity required for dense, fast circuits set new material specifications. Recent developments in puller-design and growth processes to meet these stringent demands of the present and future are reviewed,
Proc. Reliab. Phys. 114 (1983). The generation of electron traps in Poly Silicon Oxide by the application of an electric field in the absence of current is described. The assymetric 1 V curves of textured poly-silicon oxide tunneling layers allow high "'reverse bias" electric fields to be applied with no measureable current. After these fields are applied, new traps are observed that reduce the "forward bias" conduction. These traps appear to be empty until the resumption of forward bias conduction fills them. They are roughly linear with applied field and appear to saturate with time. A floating gate circuit that allows convenient measurement of the passage of 10 8 coulombs c m - 2 and current density from 10 2 amps cm 2 to 10 ~2 amps cm 2 to be conveniently measured is described.
Recent advances and future directions in CZ-silicon crystal growth technology. GEORGE FIEGL. Solid. St. Technol. 121 (August 1983). Crystal growing has recently been the focal point of intense applied research, for it forms one of the main pillars of modern microelectronic technology. Today's advanced micro-circuits require crystalline semiconductor materials with a very high degree of perfection. In addition, price pressures have dictated crystal diameter and melt size increases, although intrinsic material properties do not improve through mere scale-ups. New technologies have to evolve to meet the demands for the most complex devices. A lirst step in coping with this situation is the recent introduction of a fully computer-controlled crystal growing process, resulting in a high degree of reproducibility. The application of magnetic fields, which aid in the suppression of temperature fluctuations near the crystal melt interface, has led to further improvement towards a more homogenous material. However, inhomogeneities on a macroscopic- and microscopic-scale, resulting from the nonsteady stale nature of the present widely used CZ batch process, can best be controlled through continuous melt replenishment.
LPCVD polycrystallinesilienn: growth and physical properties of in-situ phosphorus doped and undoped films. GUNTHER HARBEKE, LISELOTTE KRAUSBAUER, EDGAR F. STE1GMEIER, Thickness dependence of dielectric breakdown failure of ALOIS E. WlDMER, HEINZ F. KAPPERT and GERD NEUGEBAUER. thermal SiOz films, K1Kuo YAMABE, KENJI TANIGUCHI and RCA Rev. 44, 287 (June 1983}. In this application-oriented study we have investigated in-situ phosphorus doped L P C V D polysilicon films deposited in the temperature range from 560°C to 640°C and compared the results with those previously obtained on undoped films. X-ray diffraction, TEM, SEM, R a m a n and elastic light scattering, optical absorption and reflection and other techniques were used to obtain information on the grain size, structure, structural perfection, strain, refractive index, surface roughness and electrical conductivity. We found that to obtain phosphorus doped films of highest quality, deposition in the amorphous form, i.e., at temperatures not exceeding 570°C, is necessary. Of slightly lower quality, but acceptable for less critical applications are films deposited at 580°C ~< Ta ~ 620°C. Layers deposited at Ta ~ 620°C are considered to be of poor quality,
Double-barrel II1 V compound vapor-phase epitaxy systems, G. H. OLSEN and T, J. ZAMEROWSKI.RCA Rev. 44, 270 (June 1983). A unique system for the growth of III V compound multilayer structures without interruption of crystal growth is described. This system has generated large improvements in the synthesis of long-wavelength optoelectronic devices. A complete 1.3-tam laser structure can be grown in 30 minutes and more than 15 such structures can be grown in a Single day. Single layers as thin as 60A have been measured. 1,3tam l n G a A s P cw lasers with lasing threshold currents as low as 45 mA and 1.0 1.7-lam InGaAs photodetectors with leakage currents below 10nA and q u a n t u m efficiencies near 80~,, have been synthesized with the system. Trapping in tunnel oxides grown on textured polysilicon. B.D. PRICKETT, J. M. CAYWOOD and R. K. ELLIS. IEEE 21st Ann.
YOSHIAKIMA1SUSHITA. IEEE 21st Ann. Proc. Reliab. Phys. t84 (1983). Thickness dependence of total dielectric breakdown failure fraction of thermal SiOz films has a minimum value at around l l 0 A and a m a x i m u m value at around 400A. It is concluded that two main origins of dielectric breakdown failures of thin SiOz films are surface contamination prior to gate oxidation and microdefects in Si substrates. Oxygen and carbon measurements on silicon slices by the 1R method. PETER STALLHOFERand DIETHARD HUBER. Solid St. Technol. 233 (August 1983). Oxygen has recently attracted a lot of attention in the manufacture of silicon semiconductors due to its inherent potential for denuded zone formation and positive defect engineering. Its concentration is measured by the infrared absorption method which, as an optical method, also depends on the transmission or reflection conditions of the wafer surfaces, i.e. polished or back damaged surfaces. These different surface conditions modify the transmission formula for the calculation of the exact oxygen content. The exact equations are given for most examples of today's state-of-the-art silicon wafer technology.
Degradation mechanism in St-doped AI/Si contacts and an extremely stable metullization system. MASAMICHI MORI, SHUCHI KANAMOR1 and TAKEMI UEKI. IEEE Trans. Cornponents Hybrids Mfq Technol. C H M T - 6 (2) 159 (June 1983l. The resistance increase of diffused resistors with St-doped A1 metallization was investigated under high current density. This degradation was caused by void formation at the St-doped A1/Si interface. The resistance increase of the diffused resistor corresponded to the resistor length expanded by this void formation. The void formation resulted from a combination of A1 and Si electromigration and
World Abstracts on Microelectronics and Reliability diffusion of Si into the A1 layer. This mechanism was confirmed by analyses of Cu-doped Al, which had excellent resistance to A1 electromigration, and the A1/TiN/Ti metallization system, which should have a complete barrier effect against Si diffusion into A1. Based on these degradation analyses, an extremely stable Cu-doped AI/TiN/Ti metallization system has been proposed for high current density applications. On a relationship between substrate perfection and stacking faults in homoepitaxial silicon. A. DREEBENand A. ScriuJKo. RCA Rev. 44, 217 (June 1983). Imperfections and defects in silicon substrates used for homoepitaxial devices can be sources for the nucleation of stacking faults at the epi layer-substrate interface. These faults can be electrically active and degrade device performance. In addition to dislocations and impurity atoms, damaged layers on the substrate are also possible sources. Such damage can arise from the mechanical polishing processes for preparing the substrate and from ion implantation. Ion implantation is now used routinely for the formation of buried layers in several types of silicon bipolar device wafers. An evaluation of residual substrate damage resulting from ion implantation and its effect on epitaxial layers has been made. Chemical etching has been used to reveal the damage in
8. T H I C K -
AND
THIN-FILM
COMPONENTS,
595
patterned device wafers prior to epitaxy. Using Nomarski microscopy, we have compared these samples with similarly etched epitaxiallayers on companion wafers. Stacking faults in the epi layers have been correlated with etch pit formation in the buried layer pockets. The results show that residual damage and stacking fault formation are related.
Hot electron reliability modeling in VLSI devices. AKIRA ITO, HENRY A. SWASEYand E. W. (PETE)GEORGE. IEEE. 21st Ann. Proc. Reliab. Phys. 96 (1983). The dependence of hot-electron trapping on device size and applied gate bias is analyzed both theoretically and experimentally. A simple and accurate model is developed to determine the long term stress effect on narrow and short channel devices. It is found that the channel hot electron limit is determined by the emission probability and trap density in the birdsbeak region of narrow devices when the gate bias exceeds the threshold voltage of the parasitic birdsbeak device. The channel lengths, drain to source bias and gate oxide trap density for the LOCOS process are essential parameters incorporated in this model. The calculated curves depicting threshold voltage shift vs time are in excellent agreement with empirical data. These shifts are accounted for by the effect of the higher trap density in the birdsbeak region for high bias conditions on narrow devices.
HYBRID
CIRCUITS
AND
MATERIALS
Effects of substrate thermal characteristics on the electromigration behaviour of AI thin film conductors. C. J. Wu and M. J. MCNUTT. IEEE 21st Ann. Proc. Reliab. Phys. 24 (1983). Electromigration failure in aluminum conductors is strongly temperature activated, and reliable levels of current density do significantly raise the conductor temperature. However, the temperature increase and its ultimate effect on the conductor lifetime is related to device and substrate structure and to the pulsewidth and duty cycle of pulsed currents. This work describes simple but accurate models for thermal buildup in typical IC structures due to both constant and pulsed currents. The results are then included in predictive models for pulsed current electromigration lifetime. These models include temperature cycling and its effect on damage relaxation between pulses, and they are built up in a modular fashion from the basic constant current model. Experimental data is shown to support the theory,
tungsten deposited on to thermal oxide as well as silicides deposited on to 150 nm of n-type polycrystalline silicon were stressed at high DC current densities (< 106 A cm-2) until open-circuit failure. All of the stripes failed by electromigration. The sign of the charge carrier in silicides of Ta and W, determined by failure location, was opposite to the published data determined from the Hall effect.
Solder creams and vapour phase soldering in hybrid technology. WALLACE RUBIN. Electron. Prod. 13 (August 1983). With the trend towards surface mounted components increasing, solder creams promise to be of considerable importance in the future,
Electrical properties of RF sputtered NiCr thin film resistors with Cn contacts. R. K. NAHAR and N. M. DEVASHRAYEE. Electrocomp. Sci. Technol. l l , 43 (1983). Investigations on RF sputtered NiCr thin film resistors, fabricated using Cu as conductor metallization, were made. The contact resistance characteristics, resistor film characteristics and TCR of the resistors were measured. The effect of heat treatment on the resistor characteristics was studied. A suitable annealing cycle for the resistor stabilization was studied. A suitable annealing cycle for the resistor stabilization was obtained. The effect of passivation by a thin quartz film on the resistor properties was also examined. The results are presented and discussed in this paper.
Electron tunnelling and bopping possibilities in RnO 2 thick films. N. C. HALDER, Electrocomp. Sci. Technol. 11, 21 (1983). It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling and (iii) the phonon assisted hopping. Equations for activation energies are derived for the temperature minimum of the resistance with and without hopping. New equations for TCR are suggested. Some extensivecalculations of TCR and activation energy have been made for RuO 2 thick film resistors, the results of which agree well with available experimental measurements,
New type of local resonances in thin rough films. V. M. AGRANOVICH,V. E. KRAVTSOVand T. A. LESKOVA.Solid St. Commun. 47 (11) 925 (1983). A new type of local resonances is predicted. Two different mechanisms of their formation are pointed out. The first one is connected with a peculiarity of the Coulumb interaction in thin films. The second type of resonances appears when spatial dispersion in films is taken into account. The considered local resonances can take place in metal as well as semiconductor and dielectric films.
New thick-film microwave elements for microwave integrated circuits. JANUSZ J. GONDEK, MAREK A. WOJCICKI and JAN CABER. Electrocomp. Sci. Technol. 11, 1 (1983). The realisation of microwave integrated circuits consisting of numerous elements and components, both passive and active, takes place in steps. Initially, experimental constitutent Eleetromigration failure in thin film silieides and polysilieon/ elements are designed and constructed, and only after it is silieide (polycide) structures. J. R. LLOYD, M. J. SULLIVAN, found that they satisfy the operating conditions, can they be G. S. HOPPER, J. T. COFFIN, E. T. SEVERNand J. L. JOZWIAK. integrated into a sub-system. As a result of this we obtain IEEE 21st Ann. Proc. Reliab. Phys. 198 (1983). Thin film complicated Microwave Integrated Circuits (M1Cs). Initially conductor stripes (150nm thick), of silicides of tantalum and however one has to construct basic MIC elements such as:
World Abstracts on Microelectronics and Reliability
and linewidths of the resonances as well as effective correlation energies of the corresponding energy states are compared for both materials. It is shown that the existing large differences of these quantities between a-Si:H and a-Ge : H can be explained by the differences of spin orbit coupling and degree of localization,
Epitaxial reactor systems: characteristics, operation and epitaxy costs. G. W. CULLEN, J. F. CORBO¥ and R. METZL. RCA Rev. 44, 187 (June 1983). In this paper we discuss the design and operating characteristics of various homoepitaxial reactor systems now being employed in the semiconductor industry. The parameters available for control of the deposit characteristics, specifically as related to the reactor configurations, are outlined. The current technology of slip control through rf-heated susceptor design is reviewed. The very significant advantages associated with reduced-pressure epitaxial growth are presented. The throughputs and costs involved in each reactor are analyzed, Finally, we make some predictions concerning the future trends of development in epitaxial reactor technology,
Developments in Czoehralski silicon crystal growth. JERRY W. MooDY and ROGER A. FREDERICK. Solid St. Technol. 221 (August 1983). If past trends can be used as a guide, then "'bigger and better" are the watchwords for future Czochralski silicon development--bigger in the sense of larger diameter crystals from larger charge sizes; better in terms of improved homogeneity and control of impurities and defects. The economics associated with large diameter wafers and the homogeneity required for dense, fast circuits set new material specifications. Recent developments in puller-design and growth processes to meet these stringent demands of the present and future are reviewed,
Proc. Reliab. Phys. 114 (1983). The generation of electron traps in Poly Silicon Oxide by the application of an electric field in the absence of current is described. The assymetric 1 V curves of textured poly-silicon oxide tunneling layers allow high "'reverse bias" electric fields to be applied with no measureable current. After these fields are applied, new traps are observed that reduce the "forward bias" conduction. These traps appear to be empty until the resumption of forward bias conduction fills them. They are roughly linear with applied field and appear to saturate with time. A floating gate circuit that allows convenient measurement of the passage of 10 8 coulombs c m - 2 and current density from 10 2 amps cm 2 to 10 ~2 amps cm 2 to be conveniently measured is described.
Recent advances and future directions in CZ-silicon crystal growth technology. GEORGE FIEGL. Solid. St. Technol. 121 (August 1983). Crystal growing has recently been the focal point of intense applied research, for it forms one of the main pillars of modern microelectronic technology. Today's advanced micro-circuits require crystalline semiconductor materials with a very high degree of perfection. In addition, price pressures have dictated crystal diameter and melt size increases, although intrinsic material properties do not improve through mere scale-ups. New technologies have to evolve to meet the demands for the most complex devices. A lirst step in coping with this situation is the recent introduction of a fully computer-controlled crystal growing process, resulting in a high degree of reproducibility. The application of magnetic fields, which aid in the suppression of temperature fluctuations near the crystal melt interface, has led to further improvement towards a more homogenous material. However, inhomogeneities on a macroscopic- and microscopic-scale, resulting from the nonsteady stale nature of the present widely used CZ batch process, can best be controlled through continuous melt replenishment.
LPCVD polycrystallinesilienn: growth and physical properties of in-situ phosphorus doped and undoped films. GUNTHER HARBEKE, LISELOTTE KRAUSBAUER, EDGAR F. STE1GMEIER, Thickness dependence of dielectric breakdown failure of ALOIS E. WlDMER, HEINZ F. KAPPERT and GERD NEUGEBAUER. thermal SiOz films, K1Kuo YAMABE, KENJI TANIGUCHI and RCA Rev. 44, 287 (June 1983}. In this application-oriented study we have investigated in-situ phosphorus doped L P C V D polysilicon films deposited in the temperature range from 560°C to 640°C and compared the results with those previously obtained on undoped films. X-ray diffraction, TEM, SEM, R a m a n and elastic light scattering, optical absorption and reflection and other techniques were used to obtain information on the grain size, structure, structural perfection, strain, refractive index, surface roughness and electrical conductivity. We found that to obtain phosphorus doped films of highest quality, deposition in the amorphous form, i.e., at temperatures not exceeding 570°C, is necessary. Of slightly lower quality, but acceptable for less critical applications are films deposited at 580°C ~< Ta ~ 620°C. Layers deposited at Ta ~ 620°C are considered to be of poor quality,
Double-barrel II1 V compound vapor-phase epitaxy systems, G. H. OLSEN and T, J. ZAMEROWSKI.RCA Rev. 44, 270 (June 1983). A unique system for the growth of III V compound multilayer structures without interruption of crystal growth is described. This system has generated large improvements in the synthesis of long-wavelength optoelectronic devices. A complete 1.3-tam laser structure can be grown in 30 minutes and more than 15 such structures can be grown in a Single day. Single layers as thin as 60A have been measured. 1,3tam l n G a A s P cw lasers with lasing threshold currents as low as 45 mA and 1.0 1.7-lam InGaAs photodetectors with leakage currents below 10nA and q u a n t u m efficiencies near 80~,, have been synthesized with the system. Trapping in tunnel oxides grown on textured polysilicon. B.D. PRICKETT, J. M. CAYWOOD and R. K. ELLIS. IEEE 21st Ann.
YOSHIAKIMA1SUSHITA. IEEE 21st Ann. Proc. Reliab. Phys. t84 (1983). Thickness dependence of total dielectric breakdown failure fraction of thermal SiOz films has a minimum value at around l l 0 A and a m a x i m u m value at around 400A. It is concluded that two main origins of dielectric breakdown failures of thin SiOz films are surface contamination prior to gate oxidation and microdefects in Si substrates. Oxygen and carbon measurements on silicon slices by the 1R method. PETER STALLHOFERand DIETHARD HUBER. Solid St. Technol. 233 (August 1983). Oxygen has recently attracted a lot of attention in the manufacture of silicon semiconductors due to its inherent potential for denuded zone formation and positive defect engineering. Its concentration is measured by the infrared absorption method which, as an optical method, also depends on the transmission or reflection conditions of the wafer surfaces, i.e. polished or back damaged surfaces. These different surface conditions modify the transmission formula for the calculation of the exact oxygen content. The exact equations are given for most examples of today's state-of-the-art silicon wafer technology.
Degradation mechanism in St-doped AI/Si contacts and an extremely stable metullization system. MASAMICHI MORI, SHUCHI KANAMOR1 and TAKEMI UEKI. IEEE Trans. Cornponents Hybrids Mfq Technol. C H M T - 6 (2) 159 (June 1983l. The resistance increase of diffused resistors with St-doped A1 metallization was investigated under high current density. This degradation was caused by void formation at the St-doped A1/Si interface. The resistance increase of the diffused resistor corresponded to the resistor length expanded by this void formation. The void formation resulted from a combination of A1 and Si electromigration and
World Abstracts on Microelectronics and Reliability diffusion of Si into the A1 layer. This mechanism was confirmed by analyses of Cu-doped Al, which had excellent resistance to A1 electromigration, and the A1/TiN/Ti metallization system, which should have a complete barrier effect against Si diffusion into A1. Based on these degradation analyses, an extremely stable Cu-doped AI/TiN/Ti metallization system has been proposed for high current density applications. On a relationship between substrate perfection and stacking faults in homoepitaxial silicon. A. DREEBENand A. ScriuJKo. RCA Rev. 44, 217 (June 1983). Imperfections and defects in silicon substrates used for homoepitaxial devices can be sources for the nucleation of stacking faults at the epi layer-substrate interface. These faults can be electrically active and degrade device performance. In addition to dislocations and impurity atoms, damaged layers on the substrate are also possible sources. Such damage can arise from the mechanical polishing processes for preparing the substrate and from ion implantation. Ion implantation is now used routinely for the formation of buried layers in several types of silicon bipolar device wafers. An evaluation of residual substrate damage resulting from ion implantation and its effect on epitaxial layers has been made. Chemical etching has been used to reveal the damage in
8. T H I C K -
AND
THIN-FILM
COMPONENTS,
595
patterned device wafers prior to epitaxy. Using Nomarski microscopy, we have compared these samples with similarly etched epitaxiallayers on companion wafers. Stacking faults in the epi layers have been correlated with etch pit formation in the buried layer pockets. The results show that residual damage and stacking fault formation are related.
Hot electron reliability modeling in VLSI devices. AKIRA ITO, HENRY A. SWASEYand E. W. (PETE)GEORGE. IEEE. 21st Ann. Proc. Reliab. Phys. 96 (1983). The dependence of hot-electron trapping on device size and applied gate bias is analyzed both theoretically and experimentally. A simple and accurate model is developed to determine the long term stress effect on narrow and short channel devices. It is found that the channel hot electron limit is determined by the emission probability and trap density in the birdsbeak region of narrow devices when the gate bias exceeds the threshold voltage of the parasitic birdsbeak device. The channel lengths, drain to source bias and gate oxide trap density for the LOCOS process are essential parameters incorporated in this model. The calculated curves depicting threshold voltage shift vs time are in excellent agreement with empirical data. These shifts are accounted for by the effect of the higher trap density in the birdsbeak region for high bias conditions on narrow devices.
HYBRID
CIRCUITS
AND
MATERIALS
Effects of substrate thermal characteristics on the electromigration behaviour of AI thin film conductors. C. J. Wu and M. J. MCNUTT. IEEE 21st Ann. Proc. Reliab. Phys. 24 (1983). Electromigration failure in aluminum conductors is strongly temperature activated, and reliable levels of current density do significantly raise the conductor temperature. However, the temperature increase and its ultimate effect on the conductor lifetime is related to device and substrate structure and to the pulsewidth and duty cycle of pulsed currents. This work describes simple but accurate models for thermal buildup in typical IC structures due to both constant and pulsed currents. The results are then included in predictive models for pulsed current electromigration lifetime. These models include temperature cycling and its effect on damage relaxation between pulses, and they are built up in a modular fashion from the basic constant current model. Experimental data is shown to support the theory,
tungsten deposited on to thermal oxide as well as silicides deposited on to 150 nm of n-type polycrystalline silicon were stressed at high DC current densities (< 106 A cm-2) until open-circuit failure. All of the stripes failed by electromigration. The sign of the charge carrier in silicides of Ta and W, determined by failure location, was opposite to the published data determined from the Hall effect.
Solder creams and vapour phase soldering in hybrid technology. WALLACE RUBIN. Electron. Prod. 13 (August 1983). With the trend towards surface mounted components increasing, solder creams promise to be of considerable importance in the future,
Electrical properties of RF sputtered NiCr thin film resistors with Cn contacts. R. K. NAHAR and N. M. DEVASHRAYEE. Electrocomp. Sci. Technol. l l , 43 (1983). Investigations on RF sputtered NiCr thin film resistors, fabricated using Cu as conductor metallization, were made. The contact resistance characteristics, resistor film characteristics and TCR of the resistors were measured. The effect of heat treatment on the resistor characteristics was studied. A suitable annealing cycle for the resistor stabilization was studied. A suitable annealing cycle for the resistor stabilization was obtained. The effect of passivation by a thin quartz film on the resistor properties was also examined. The results are presented and discussed in this paper.
Electron tunnelling and bopping possibilities in RnO 2 thick films. N. C. HALDER, Electrocomp. Sci. Technol. 11, 21 (1983). It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling and (iii) the phonon assisted hopping. Equations for activation energies are derived for the temperature minimum of the resistance with and without hopping. New equations for TCR are suggested. Some extensivecalculations of TCR and activation energy have been made for RuO 2 thick film resistors, the results of which agree well with available experimental measurements,
New type of local resonances in thin rough films. V. M. AGRANOVICH,V. E. KRAVTSOVand T. A. LESKOVA.Solid St. Commun. 47 (11) 925 (1983). A new type of local resonances is predicted. Two different mechanisms of their formation are pointed out. The first one is connected with a peculiarity of the Coulumb interaction in thin films. The second type of resonances appears when spatial dispersion in films is taken into account. The considered local resonances can take place in metal as well as semiconductor and dielectric films.
New thick-film microwave elements for microwave integrated circuits. JANUSZ J. GONDEK, MAREK A. WOJCICKI and JAN CABER. Electrocomp. Sci. Technol. 11, 1 (1983). The realisation of microwave integrated circuits consisting of numerous elements and components, both passive and active, takes place in steps. Initially, experimental constitutent Eleetromigration failure in thin film silieides and polysilieon/ elements are designed and constructed, and only after it is silieide (polycide) structures. J. R. LLOYD, M. J. SULLIVAN, found that they satisfy the operating conditions, can they be G. S. HOPPER, J. T. COFFIN, E. T. SEVERNand J. L. JOZWIAK. integrated into a sub-system. As a result of this we obtain IEEE 21st Ann. Proc. Reliab. Phys. 198 (1983). Thin film complicated Microwave Integrated Circuits (M1Cs). Initially conductor stripes (150nm thick), of silicides of tantalum and however one has to construct basic MIC elements such as: