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Device quality heteroepitaxial PbTe films with controllable carrier concentrations
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AUTHORS' ABSTRACTS
Device quality heteroepitaxial PbTe f'dms with controllable carrier concentrations
E. H. C. PARKER AND D. WILLIAMS Department o f Physics, Sir John Cass School o f Science and Technology, Jewry Street, London EC3N 2EY (GL Britain)
(Paper 9-37) PbTe films with room temperature electrical properties superior to any previously reported 1 have been prepared by evaporation onto mica substrates under clean onditions. I n situ measurements showed that the annealed films had bulk value Hall mobilities ( ~ 1 7 0 0 cm 2 V -J s -1) and that predictable n-type carrier concentrations over the range 1016 (intrinsic level) to 4 x l 0 Is cm -3 could be obtained by varying the source temperature during film growth. Adjustments to the carrier concentration could also be made after film growth by exposure to low pressures (10 - n - 1 0 -9 Torr) o f 0 2 ; the bulk-like nature o f the films was still retained 2. The field effect mobility was found to be a unique function o f carrier concentration and values up to 800 cm 2 V -1 s -1 were obtained, indicating the device potential o f PbTe films. Measurements were made over a wide temperature range ( 1 0 0 - 5 5 0 K) and an analysis in terms of the film's microstructure is presented. 1 H. Holloway and E. M. Logothetis, J. Appl. Phys., 42 (1971) 4522. 2 E. H. C. Parker, D. Williams and R. M. King, submitted to Surf. Sci.
AUTHORS' ABSTRACTS
Device quality heteroepitaxial PbTe f'dms with controllable carrier concentrations
E. H. C. PARKER AND D. WILLIAMS Department o f Physics, Sir John Cass School o f Science and Technology, Jewry Street, London EC3N 2EY (GL Britain)
(Paper 9-37) PbTe films with room temperature electrical properties superior to any previously reported 1 have been prepared by evaporation onto mica substrates under clean onditions. I n situ measurements showed that the annealed films had bulk value Hall mobilities ( ~ 1 7 0 0 cm 2 V -J s -1) and that predictable n-type carrier concentrations over the range 1016 (intrinsic level) to 4 x l 0 Is cm -3 could be obtained by varying the source temperature during film growth. Adjustments to the carrier concentration could also be made after film growth by exposure to low pressures (10 - n - 1 0 -9 Torr) o f 0 2 ; the bulk-like nature o f the films was still retained 2. The field effect mobility was found to be a unique function o f carrier concentration and values up to 800 cm 2 V -1 s -1 were obtained, indicating the device potential o f PbTe films. Measurements were made over a wide temperature range ( 1 0 0 - 5 5 0 K) and an analysis in terms of the film's microstructure is presented. 1 H. Holloway and E. M. Logothetis, J. Appl. Phys., 42 (1971) 4522. 2 E. H. C. Parker, D. Williams and R. M. King, submitted to Surf. Sci.