- Email: [email protected]
Diffusivity of moisture in thin films
Life of magnetic electroless Co-P thin films H I D E O OKAMOTO, H A R U O NI'I'FA and SEIGO OHNO I E E E Trans. Reliab. R-30 (5), 402 (1981) Effective life of electroless Co-P (2.5 wt%) thin films of about 100 nm in thickness was evaluated for both magnetic characteristics and corrosion. The Co-P films were grown on rigid A I substrates overcoated with nonmagnetic Ni-P thick films and were finally covered with electroplated Rh thin films of 120nm-180nm in thickness. The life of the magnetic characteristics was defined as the time to reach 10% deviation from the initial values of Hc (coercive force), Br (remanence), and S (squreness of hystersis loop). The life of the films for corrosion was defined as the induction period of corrosion. An increase of He was observed above 80~ for isothermal annealing, but Br and S were unchanged. The activation energy of the variation of He was approximately 0.7eV below 144~ The life of magnetic characteristics was estimated to be approximately 4.1 x 10 t -2.3 x I0 ~ hrs at 55~ corresponding to the allowable maximum temperature in field service. The life for corrosion was influencd by the quality of Rh films.
Diffusivity of moisture in thin films E. J. MclNERNEY and P. A. FLINN Proc. IEEE Reliab. Phys. Syrup., 264 (1982) Absorption of moisture by thin films produces a volume increase which changes the film stress toward compression. This effect is the basis of a new technique for measuring water diffusivity. The diffusion coefficient is determined by a least squares fit of the stress data to the diffusion equation, with appropriate boundary conditions. This technique provides a fast, quantitative supplement to the traditional bias-temperature-humidity stress testing. The differences in diffusivities of common passivations are substantial; phosphosilicate glasses are orders of magnitude higher than plasma nitrides. Diffusivities for several passivation materials are given.
Ohmic contacts to III-V compound semiconductors: a review of fabrication techniques A. PIOTROWSKA, A. G U I V A R C t t and G. PELOUS Solid-St. Electron. 26 (3), 179 (1983) After a brief introduction on the phenomena governing the ohmic contact formation and measurements in metal - semiconductor structures, we present a review of papers on the ohmic contact realization onto III-V compounds. We discuss the thermal behaviour of various multicomponent metal - semiconductor systems (alloying, sintering, use of lasers and electron beams) and comment about overdoping the semiconductor surface before metal deposition (diffusion, ion implantation, epitaxy). We show that, in a general way, the metal III--V semiconductor interactions lead to the formation of compounds. From an electrical point of view, it seems that the main consequence of the compounts appearance is not a large change of the barrier height due to a change of the interface chemistry but the rough interface resulting from particle precipitation. We conclude that, if contacts made up to now, are often simple and usable, they are still far from ideal.
60
3. Production & Processing Multi-chip module technology R. A. RINNE and D. R. B A R B O U R Electrocomponent Sci. Technol. 10, 31 (1982) The paper describes the key design features and outlines the manufacturing process for multi-chip ceramic modules used in recently announced IBM products. Emphasis is placed on the thermal conduction module (TCM) which is used in the IBM 3081 computer and incorporates the most advanced substrate and module technologies at IBM. The 90mm x 90mm TCM substrate contains up to 32 ceramic layers and typically 130 b,l of impedance controlled wiring to interconnect up to 118 LSI logic and array devices. The TCM is designed to provide a cooling capacity of up to 300 W. Key manufacturing challenges are highlighted. Wet etching today P I E T E R S. B U R G G R A A F Semiconductor Int., 48 (February 1983) With all the talk about dry etching, wet-chemistry etching must be a thing of the past. Right? No, wet etching still has its place in much of today's wafer processing. The application of reactive ion etching to the definition of patterns in AI-Si-Cu alloy conductor layers and thick silicon oxide films A N D R E W S A. C H A M B E R S Solid St. Technol., 83 (January 1983). Complete plasma-based etching of A1-Si-Cu metallizations in an RIE sysem is demonstrated. Control of etch rate and selectivity over SiO2 and PSG is shown to be achieved by varying gas composition and applied rf current. Variation of process parameters for complete removal of copper residues is described. Tapered-wall Si02 etching with a high selectivity over silicon using has mixtures of CF4G2 is demonstrated.
Wire-routing machines - new tools for VLSI physical design SE J U N E H O N G and RAVI NAIR Proc. I E E E 71 (1), 57 (1983) Interconnection of components in a VLSI chip is becoming an increasingly complex problem. In his paper we examine the complexity of the wire routing process and discuss several new approaches to solving the problem using a parallel system architecture. The machines discussed ranged from compact systems for highly specialized application to more general designs suited for broader applications. The process speed-up due to parallelism and the cost advantage due to the use of large numbers of identical VLSI parts make these new machines practical today.
IC process modelling and topography design A N D R E W R. N E U R E U T H E R Proc. I E E E 71 (1), 121 (1983) The device features in the third dimension in VLSI affect packing density and circuit performance. Establishing
Diffusivity of moisture in thin films E. J. MclNERNEY and P. A. FLINN Proc. IEEE Reliab. Phys. Syrup., 264 (1982) Absorption of moisture by thin films produces a volume increase which changes the film stress toward compression. This effect is the basis of a new technique for measuring water diffusivity. The diffusion coefficient is determined by a least squares fit of the stress data to the diffusion equation, with appropriate boundary conditions. This technique provides a fast, quantitative supplement to the traditional bias-temperature-humidity stress testing. The differences in diffusivities of common passivations are substantial; phosphosilicate glasses are orders of magnitude higher than plasma nitrides. Diffusivities for several passivation materials are given.
Ohmic contacts to III-V compound semiconductors: a review of fabrication techniques A. PIOTROWSKA, A. G U I V A R C t t and G. PELOUS Solid-St. Electron. 26 (3), 179 (1983) After a brief introduction on the phenomena governing the ohmic contact formation and measurements in metal - semiconductor structures, we present a review of papers on the ohmic contact realization onto III-V compounds. We discuss the thermal behaviour of various multicomponent metal - semiconductor systems (alloying, sintering, use of lasers and electron beams) and comment about overdoping the semiconductor surface before metal deposition (diffusion, ion implantation, epitaxy). We show that, in a general way, the metal III--V semiconductor interactions lead to the formation of compounds. From an electrical point of view, it seems that the main consequence of the compounts appearance is not a large change of the barrier height due to a change of the interface chemistry but the rough interface resulting from particle precipitation. We conclude that, if contacts made up to now, are often simple and usable, they are still far from ideal.
60
3. Production & Processing Multi-chip module technology R. A. RINNE and D. R. B A R B O U R Electrocomponent Sci. Technol. 10, 31 (1982) The paper describes the key design features and outlines the manufacturing process for multi-chip ceramic modules used in recently announced IBM products. Emphasis is placed on the thermal conduction module (TCM) which is used in the IBM 3081 computer and incorporates the most advanced substrate and module technologies at IBM. The 90mm x 90mm TCM substrate contains up to 32 ceramic layers and typically 130 b,l of impedance controlled wiring to interconnect up to 118 LSI logic and array devices. The TCM is designed to provide a cooling capacity of up to 300 W. Key manufacturing challenges are highlighted. Wet etching today P I E T E R S. B U R G G R A A F Semiconductor Int., 48 (February 1983) With all the talk about dry etching, wet-chemistry etching must be a thing of the past. Right? No, wet etching still has its place in much of today's wafer processing. The application of reactive ion etching to the definition of patterns in AI-Si-Cu alloy conductor layers and thick silicon oxide films A N D R E W S A. C H A M B E R S Solid St. Technol., 83 (January 1983). Complete plasma-based etching of A1-Si-Cu metallizations in an RIE sysem is demonstrated. Control of etch rate and selectivity over SiO2 and PSG is shown to be achieved by varying gas composition and applied rf current. Variation of process parameters for complete removal of copper residues is described. Tapered-wall Si02 etching with a high selectivity over silicon using has mixtures of CF4G2 is demonstrated.
Wire-routing machines - new tools for VLSI physical design SE J U N E H O N G and RAVI NAIR Proc. I E E E 71 (1), 57 (1983) Interconnection of components in a VLSI chip is becoming an increasingly complex problem. In his paper we examine the complexity of the wire routing process and discuss several new approaches to solving the problem using a parallel system architecture. The machines discussed ranged from compact systems for highly specialized application to more general designs suited for broader applications. The process speed-up due to parallelism and the cost advantage due to the use of large numbers of identical VLSI parts make these new machines practical today.
IC process modelling and topography design A N D R E W R. N E U R E U T H E R Proc. I E E E 71 (1), 121 (1983) The device features in the third dimension in VLSI affect packing density and circuit performance. Establishing