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Dipoles, defects and interfaces
A347 422
Surface Science 132 (1983) 422-455 North-Holland P u b h s b m g C o m p a n y
INTERFACE STATES AT T H E SiO2-Si INTERFACE M SCHULZ Instttut fur Angewandte Phystk der Umversttat Erlangen- Nurnberg, Gluckstrasse 9, D -8520 Erlangen, Fed Rep of Germany Received 31 August 1982, accepted for publication 26 October 1982
The present understanding of interface states at the SiO2-SI interface is reviewed Typical results of measurement techniques are presented and critically discussed with respect to identification of types and origins of interface states Only one type of interface state is observed after strong hydrogen annealing The density of these interface states decays from D . > l0 I° cm -2 e V - ' near the conduction band to extremely low values of D . __
456
Surface Science 132 (1983) 456-464 North-Holland Pubhshmg Company
D I P O L E S , D E F E C T S A N D INTERFACES * A ZUR, T C McGILL and D L S M I T H Cahfornta Institute of Technology, Pasadena, Cahforma 91125, USA Received 7 February 1983, accepted for publication 10 March 1983 The importance of dipole layers at interfaces is emphasized The differences between the dLpole layers in the case of submonolayer coverages and those that are important in the case of metal-semiconductor and semiconductor-semiconductor interfaces are explored
Surface Science 132 (1983) 465-468 North-Holland Pubhshmg Company
465
T R A P S AT I N T E R F A C E S B E T W E E N GaAs n-TYPE LPE LAYERS A N D DIFFERENT SUBSTRATES J BASTON, F - J T E G U D E and K H E I M E Sohd State Electronics Department, Umverszty Duisburg, D-4100 Duisburg, Fed Rep of Germany Received 28 September 1982, accepted for pubhcatton 4 November 1982 Traps at interfaces between n-type LPE layers and different substrates (Cr-doped and undoped sermmsulatlng, n +, p + ) were investigated by both DLTS, photocapacltance and photo FET methods with detection hrtuts of 10 - 4 and below The results show very clearly that deep levels in the LPE layers have their orlgm in the sermmsulatmg substrates the improvement of which therefore is an urgent task for crystal growers
Surface Science 132 (1983) 422-455 North-Holland P u b h s b m g C o m p a n y
INTERFACE STATES AT T H E SiO2-Si INTERFACE M SCHULZ Instttut fur Angewandte Phystk der Umversttat Erlangen- Nurnberg, Gluckstrasse 9, D -8520 Erlangen, Fed Rep of Germany Received 31 August 1982, accepted for publication 26 October 1982
The present understanding of interface states at the SiO2-SI interface is reviewed Typical results of measurement techniques are presented and critically discussed with respect to identification of types and origins of interface states Only one type of interface state is observed after strong hydrogen annealing The density of these interface states decays from D . > l0 I° cm -2 e V - ' near the conduction band to extremely low values of D . __
456
Surface Science 132 (1983) 456-464 North-Holland Pubhshmg Company
D I P O L E S , D E F E C T S A N D INTERFACES * A ZUR, T C McGILL and D L S M I T H Cahfornta Institute of Technology, Pasadena, Cahforma 91125, USA Received 7 February 1983, accepted for publication 10 March 1983 The importance of dipole layers at interfaces is emphasized The differences between the dLpole layers in the case of submonolayer coverages and those that are important in the case of metal-semiconductor and semiconductor-semiconductor interfaces are explored
Surface Science 132 (1983) 465-468 North-Holland Pubhshmg Company
465
T R A P S AT I N T E R F A C E S B E T W E E N GaAs n-TYPE LPE LAYERS A N D DIFFERENT SUBSTRATES J BASTON, F - J T E G U D E and K H E I M E Sohd State Electronics Department, Umverszty Duisburg, D-4100 Duisburg, Fed Rep of Germany Received 28 September 1982, accepted for pubhcatton 4 November 1982 Traps at interfaces between n-type LPE layers and different substrates (Cr-doped and undoped sermmsulatlng, n +, p + ) were investigated by both DLTS, photocapacltance and photo FET methods with detection hrtuts of 10 - 4 and below The results show very clearly that deep levels in the LPE layers have their orlgm in the sermmsulatmg substrates the improvement of which therefore is an urgent task for crystal growers