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Distribution of sodium in silicon nitride
298
W O R L D A B S T R A C T S ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
test systems, with an eye toward the systems of the future. The authors see the present confusion concerning I.C. testing giving way to standardized, easily-specified, easily-repeatable switching-time measurements done on sophisticated high-speed machines built around a central computer.
Abrupt p-n junctions at arbitrary levels. H. D. BARBER, Solid-St. Electron. 12 (1969), p. 425. By introducing an injection level factor it is possible to obtain an approximate solution to the onedimensional transport equations through an abrupt p - n junction. Within its approximations, this solution is valid at levels of injection including the medium and high level cases. It is shown that this general solution yields the accepted forms for the limiting cases of low and high injection and is accurate to better than 20 per cent in the medium injection region. It is also demonstrated that an expression for the I - V characteristics of a p-n junction at arbitrary injection levels can be obtained by an analogue approach. These two expressions are compared using representative bulk parameters for silicon, germanium and indium antimonide and it is shown that the latter approach is generally accurate to better than 8 per cent. A complete analytic expression for the current voltage characteristic of a p+-n junction is derived and shown to describe experimental observations within the error of measurement.
Donor concentration dependence of electron-phonon scattering in antimony-doped germanium. H. J. ALBANY and G. LAURENCE, Solid St. Commun., 7 (1969), p. 63. The increase of the additional thermal resistivity at 6°K in the donor concentration range 8 × 1013 to 10 is cm-3 is observed to exhibit three concentration regions n < 1018 cm -~, --~1016 < n < ~ 3 × 1017 cm -3 and n > ~-~ 3 × 1017 cm -~, suggesting that electron-phonon scattering mechanisms other than those of Keyes and Carruthers should be considered in the low and intermediate concentration ranges.
Distribution of sodium in silicon nitride. I. FRANZ and W. LANGHEINRICH,Solid-St. Electron. 12 (1969), p. 145. The paper describes radiochemical examinations of the diffusion behaviour and content of sodium in single layer silicon nitride films and double layer silicon dioxide-silicon nitride films on silicon. The most significant result is that the sodium is gettered and enriched in the nitride in double layer films. Electrical properties of diffused zinc on SiO2-Si MOS structures. CHuN-YEN CHANG and KUEY-YEAu TSAO, Solid-St. Electron. 12 (1969), p. 411. Studies have been made on the C - V characteristics of SiO2-Si MOS structures under various oxidation temperature, heat treatment, and zinc doping conditions. Diffused zinc is expected to have three major effects on the characteristics of SiO 2Si MOS structures. Firstly, zinc behaves as negatively charged ion in SiO 2 layer which will compensate a positively charged ion such as a sodium ion. Secondly, zinc atoms behave as acceptor-like surface states at the SiO2-Si interface which may also compensate donor-like surface states at the interface. These two effects will cause the C - V curves to shift toward the positive-voltage direction. Thirdly, zinc atoms behave as shallow acceptors in the semiconductor substrate. These acceptors will change the background doping of the substrate which in turn causes a change of the normalized minimum capacitance. The above three effects have indeed been observed experimentally in both n-type and p-type silicon samples. C - V measurements of zinc diffused sample after three months room-temperature aging in air show that there are virtually no changes in comparison with those measured immediately after device fabrication.
Boundary conditions for the space-charge region o f a p - n junction. A. NUSSBAUM, Solid-St. Electron. 12 (1969), p. 177. The purpose of this paper is to show that the controversy concerning the relation of the applied potential difference to the difference across the space-charge region of a p-n junction is due to a neglect of the non-zero gradients of the electrochemical potentials. By incorporating these quantities and by a suitable modification of the Fletcher boundary conditions, the inconsistencies discovered by Van Vlietm and Gumme112~ can be removed. Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects. A. G. REVESZand R. J. EVANS.ft. Phys. Chem. Solids 30 (1969), p. 551. Thermal oxidation of silicon was investigated under a variety of conditions. The oxidation follows a combination of linear and parabolic rate lows; the rate constants obey the Arrhenius relationship. Under very clean conditions
W O R L D A B S T R A C T S ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
test systems, with an eye toward the systems of the future. The authors see the present confusion concerning I.C. testing giving way to standardized, easily-specified, easily-repeatable switching-time measurements done on sophisticated high-speed machines built around a central computer.
Abrupt p-n junctions at arbitrary levels. H. D. BARBER, Solid-St. Electron. 12 (1969), p. 425. By introducing an injection level factor it is possible to obtain an approximate solution to the onedimensional transport equations through an abrupt p - n junction. Within its approximations, this solution is valid at levels of injection including the medium and high level cases. It is shown that this general solution yields the accepted forms for the limiting cases of low and high injection and is accurate to better than 20 per cent in the medium injection region. It is also demonstrated that an expression for the I - V characteristics of a p-n junction at arbitrary injection levels can be obtained by an analogue approach. These two expressions are compared using representative bulk parameters for silicon, germanium and indium antimonide and it is shown that the latter approach is generally accurate to better than 8 per cent. A complete analytic expression for the current voltage characteristic of a p+-n junction is derived and shown to describe experimental observations within the error of measurement.
Donor concentration dependence of electron-phonon scattering in antimony-doped germanium. H. J. ALBANY and G. LAURENCE, Solid St. Commun., 7 (1969), p. 63. The increase of the additional thermal resistivity at 6°K in the donor concentration range 8 × 1013 to 10 is cm-3 is observed to exhibit three concentration regions n < 1018 cm -~, --~1016 < n < ~ 3 × 1017 cm -3 and n > ~-~ 3 × 1017 cm -~, suggesting that electron-phonon scattering mechanisms other than those of Keyes and Carruthers should be considered in the low and intermediate concentration ranges.
Distribution of sodium in silicon nitride. I. FRANZ and W. LANGHEINRICH,Solid-St. Electron. 12 (1969), p. 145. The paper describes radiochemical examinations of the diffusion behaviour and content of sodium in single layer silicon nitride films and double layer silicon dioxide-silicon nitride films on silicon. The most significant result is that the sodium is gettered and enriched in the nitride in double layer films. Electrical properties of diffused zinc on SiO2-Si MOS structures. CHuN-YEN CHANG and KUEY-YEAu TSAO, Solid-St. Electron. 12 (1969), p. 411. Studies have been made on the C - V characteristics of SiO2-Si MOS structures under various oxidation temperature, heat treatment, and zinc doping conditions. Diffused zinc is expected to have three major effects on the characteristics of SiO 2Si MOS structures. Firstly, zinc behaves as negatively charged ion in SiO 2 layer which will compensate a positively charged ion such as a sodium ion. Secondly, zinc atoms behave as acceptor-like surface states at the SiO2-Si interface which may also compensate donor-like surface states at the interface. These two effects will cause the C - V curves to shift toward the positive-voltage direction. Thirdly, zinc atoms behave as shallow acceptors in the semiconductor substrate. These acceptors will change the background doping of the substrate which in turn causes a change of the normalized minimum capacitance. The above three effects have indeed been observed experimentally in both n-type and p-type silicon samples. C - V measurements of zinc diffused sample after three months room-temperature aging in air show that there are virtually no changes in comparison with those measured immediately after device fabrication.
Boundary conditions for the space-charge region o f a p - n junction. A. NUSSBAUM, Solid-St. Electron. 12 (1969), p. 177. The purpose of this paper is to show that the controversy concerning the relation of the applied potential difference to the difference across the space-charge region of a p-n junction is due to a neglect of the non-zero gradients of the electrochemical potentials. By incorporating these quantities and by a suitable modification of the Fletcher boundary conditions, the inconsistencies discovered by Van Vlietm and Gumme112~ can be removed. Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects. A. G. REVESZand R. J. EVANS.ft. Phys. Chem. Solids 30 (1969), p. 551. Thermal oxidation of silicon was investigated under a variety of conditions. The oxidation follows a combination of linear and parabolic rate lows; the rate constants obey the Arrhenius relationship. Under very clean conditions