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Dynamics of intense relativistic electron beams in toroidal fields
Classified abstracts 80-91 1 x 10e9 to 5 x 10e9 torr. It is found that metallic barium forms the main component of evaporation from the thin films. G Ya Plkus and V F Shnyukev+ Izo AN SSSR Ser Fiz, 37 (12); 1973, 2609-2612 (in Russian). 30 80. Eleetrophysieal properties of indium oxide pyrolytic films with disordered structure. (Germany) An analysis is given of charge transfer in In,OJ thin films, prepared by decomposition of indium acetylacetonate in an inert gas flow. The fresh films were first vacuum-annealed at about 10e6 torr and then annealed in oxygen for stabilization of film structure. It is shown that the character of structural disordering influences the behaviour of charge transfer in In203 thin films. (USSR) V F Korzo and V N Chemyaev, Phys Stat Sol (a), 20 (2), 1973,695-705.
30 81. Spin-wave resonance studies on chemical vapeur deposited YIG films. (Germany) Spin-wave resonance was measured in single crystal yttrium iron garnet fiims prepared by chemicai vapour deposition. The substrate temperatures ranged from 1150 to 1250°C during growth. Effects of annealing in oxygen have also been studied. (USA) S Bhagat et al, Phys Stat Sol (a), 20 (2), 1973, 731-738. 30 82. Optical absorption in vacuum-evaporated ytterbium fibus. (Germany) Optical,absorption in 50 to 600 A thick ytterbium films is measured in the wavelenath range 120 to 1500 nm. The ytterbium thin films have been prepared by ;apour deposition in vacuum of 10m7 torr on polished quartz and LiF crystals held at room temperature. The electron micrographic investigations reveal a granular type structure of the films. (India) R Chander and R Kumar, Phys Stat Sol (a), 20 (2), 1973, 739-744. 30 83. Dependence of trap density in SiOl thin films on the oxygen ion implantation
doses. (Germany)
The influence of oxygen ion implantation dose on the trap level density in thermally grown SiOz films is studied using the method of measurement of thermally stimulated currents from SiOt films. The oxygen ion energy of 50 keV and target temperature of 200°C were used during implantation. G Zuther et al, Phys Stat Sol (a), 20 (2), 1973, K 123-K 125. 30 84. Studies of formation of silicides and their barrier heights to silicon. (Germany) Metal-silicon and silicide-silicon diodes were fabricated by depositing thin layers of the metals Hf, Zr, Mn, Ni and Rh on (111) epilayers of silicon, and annealing in quartz tubes evacuated to less than 10m6 torr to transform the metal-silicon junctions to silicide-silicon junctions. Formation of the silicides was followed and the stoichiometries were determined by ion back-scatter analysis. The barrier heights of silicides to silicon were determined by the photoelectric method. (Sweden) K E Sundstrom et al, Phys Stat Sol (a), 20 (2), 1973, 653-668. 30 85. Stress effect in sputtered metal-semiconductor junctions. (Germany) Results are reported on the stress sensitive I-V characteristics of metal-semiconductor junctions prepared by radio-frequency sputtering of aluminium in argon at pressure of 5 X 10m3 torr on n-type silicon. The back contact was prepared by evaporation of Al in vacuum of 10es torr. A stress-sensitive negative resistance effect found when the deposition is made on very high resistivity material is also reported. (Sweden) 0 Growth et al, Phys Stat Sol (a), 20 (2), 1973, 589-594. 86. Temperature dependence of electrical transport thin polycrystalline tellurium films on glass. (Germany)
properties
30 of
The temperature dependence of the resistivity of polycrystalline thin tellurium films deposited by thermal evaporation on glass is meassured. The increase of resistivity with decreasing temperature is _.._1_:--1 L.. ..cF,,*, e‘Xnp,alnc;u uy r%.L‘,G-:^-^..-:^~^..“.. y”,%“‘cX”&ulw cXll&L>. C Alhers, Phys Star Sol (a), 20 (2), 1973,4354t5.
30 87. Growth of epitaxial CdSe upon sapphire. (Germany) The conditions for obtaining CdSe epitaxial layers on sapphire substrates with (0001) orientation are described. Sublimation of polycrystalline CdSe and its oriented deposition on substrates is carried out in a localized quasiclosed volume of a vacuum system evacuated to 5 x 10T5 torr. The temperature influence on the structure and morphology of deposited layers is investigated in the crystallization region. T M Ratcheva-Stambolieva et al, Phys Stat Sol (a), 16 (l), 1973, 315322.
32. NUCLEONICS 32 88. Dynamics of intense relativistic electron beams in toroidal fields. (USA) Intense relativistic electron beams were propagated around a 180” toroidal sector to study beam dynamics in toroidal fields. The major &an rlr;t-+ r\P 111°C nl,...” LIcI_LII UlllL ,,nrlnr “I&“_&mnrl;t;~“n ~“II~,LI”IIYfr\r 1”I “nl,+ral;~at;r\n II~UI‘II,,Lc&I,“II “I rnlF_4%1~” ati,l-ll*-JLlD *l(lD‘a,“‘,& R x B and scaled as yZ/B,, where Z is the propagated distance, Bi the toroidal field. and Y the relativistic factor. This is indicative of curvature and Vi drifts: Use of conducting walls caused an additional F x B drift around the chamber due to image current forces. Analysis of the distortion of a propagating rectangular beam shows that beam electrons follow field lines. Preliminary experiments on counterstreaming beams show inefficient reflection of beams from opposing diodes. Application of these results to beam injection and confinement in toroidal magnetic field is discussed. J Benford et al, J Appl Phys, 45 (4), 1974,1657-1666.
33. GENERAL
PHYSICS AND ELECTRONICS
33 89. Atomic beam velocity distributions with a cooled discharge source. (USA) Time-of-Sight measurements have been made for hydrogen, nitrogen and metastable helium, argon, and nitrogen beams emerging from a cooled discharge source, in order to determine the velocity distributions in these beams. We observe typically 85% H and 15% Hz relative beam number densities from a hydrogen discharge, and 10% N and 90% N2 relative beam number densities from a nitrogen discharge. The results show the effects of variation of the source gas pressure, microwave power, cooling rate, and in the case of a hydrogen discharge, the effect of adding water vapour to enhance dissociation. Argon seeding of the hydrogen discharge has been investigated as a means of determining the beam temperature without resorting to direct velocity or time-of-flight measurements. Some results are also given for room-temperature and low-temperature beams, obtained without a discharge. T M Millar, J Appl Phys, 45 (4), 1974, 1713-1720. 33:16 90. A molecular heam study of reactive nucleation of thin films: ---_...._- ___-c-l-_!__I_ _____~_1_,r T” * \ magnesrum “II perr”arnunr smgre crysuus. \“&-I,
The reactive nucleation of Mg on Ge (lOO), (11 l), and (211) surfaces was studied with the molecular beam technique. In this system Mg reacted with the substrate to form a semiconducting germanide Ma,Ge. For incident Ma fluxes of 10’2-1013 crnm3 set-i. the aermsnide nucleated at substrate temperatures of the order’of 350°C. Nucleation of the germanide on Ge (100) occurred at submonolayer Mg coverages indicating an island configuration for critical nuclei of Mg,Ge A HCP-Mg film could be grown by depositing on substrates held at room temperature. HCP-Mg films of the order of lo*-lo3 monolayers alloyed rapidly at 125°C to form the germanide. K J Matysik et al, J Vat Sci Technol, 11(2), 1974,493497. 33 91. Macroscopic particle motion in quadruple fields. (USA) The motion of ions in quadrupole field spectrometers was simulated using large particles (l&40 p diam) that can be visually observed, with appropriate scaling of the voltage and frequency parameters. In air, the motion of the large particles is damped by the viscous medium, but their stability properties are still governed by the Matheiu equation. A new method is suggested for pulsing ions out of the , >:-^..“:^....l yuauluyul= ,..“,l....^^l^ _“^” “...^&.^....,... J-UIIIIeuDI”II&l. I11&%Xi >yu.~1”lllrr=l. N Rey Whetten, J Vat Sci Technol, 11(2), 1974, 515-518. 41
30 81. Spin-wave resonance studies on chemical vapeur deposited YIG films. (Germany) Spin-wave resonance was measured in single crystal yttrium iron garnet fiims prepared by chemicai vapour deposition. The substrate temperatures ranged from 1150 to 1250°C during growth. Effects of annealing in oxygen have also been studied. (USA) S Bhagat et al, Phys Stat Sol (a), 20 (2), 1973, 731-738. 30 82. Optical absorption in vacuum-evaporated ytterbium fibus. (Germany) Optical,absorption in 50 to 600 A thick ytterbium films is measured in the wavelenath range 120 to 1500 nm. The ytterbium thin films have been prepared by ;apour deposition in vacuum of 10m7 torr on polished quartz and LiF crystals held at room temperature. The electron micrographic investigations reveal a granular type structure of the films. (India) R Chander and R Kumar, Phys Stat Sol (a), 20 (2), 1973, 739-744. 30 83. Dependence of trap density in SiOl thin films on the oxygen ion implantation
doses. (Germany)
The influence of oxygen ion implantation dose on the trap level density in thermally grown SiOz films is studied using the method of measurement of thermally stimulated currents from SiOt films. The oxygen ion energy of 50 keV and target temperature of 200°C were used during implantation. G Zuther et al, Phys Stat Sol (a), 20 (2), 1973, K 123-K 125. 30 84. Studies of formation of silicides and their barrier heights to silicon. (Germany) Metal-silicon and silicide-silicon diodes were fabricated by depositing thin layers of the metals Hf, Zr, Mn, Ni and Rh on (111) epilayers of silicon, and annealing in quartz tubes evacuated to less than 10m6 torr to transform the metal-silicon junctions to silicide-silicon junctions. Formation of the silicides was followed and the stoichiometries were determined by ion back-scatter analysis. The barrier heights of silicides to silicon were determined by the photoelectric method. (Sweden) K E Sundstrom et al, Phys Stat Sol (a), 20 (2), 1973, 653-668. 30 85. Stress effect in sputtered metal-semiconductor junctions. (Germany) Results are reported on the stress sensitive I-V characteristics of metal-semiconductor junctions prepared by radio-frequency sputtering of aluminium in argon at pressure of 5 X 10m3 torr on n-type silicon. The back contact was prepared by evaporation of Al in vacuum of 10es torr. A stress-sensitive negative resistance effect found when the deposition is made on very high resistivity material is also reported. (Sweden) 0 Growth et al, Phys Stat Sol (a), 20 (2), 1973, 589-594. 86. Temperature dependence of electrical transport thin polycrystalline tellurium films on glass. (Germany)
properties
30 of
The temperature dependence of the resistivity of polycrystalline thin tellurium films deposited by thermal evaporation on glass is meassured. The increase of resistivity with decreasing temperature is _.._1_:--1 L.. ..cF,,*, e‘Xnp,alnc;u uy r%.L‘,G-:^-^..-:^~^..“.. y”,%“‘cX”&ulw cXll&L>. C Alhers, Phys Star Sol (a), 20 (2), 1973,4354t5.
30 87. Growth of epitaxial CdSe upon sapphire. (Germany) The conditions for obtaining CdSe epitaxial layers on sapphire substrates with (0001) orientation are described. Sublimation of polycrystalline CdSe and its oriented deposition on substrates is carried out in a localized quasiclosed volume of a vacuum system evacuated to 5 x 10T5 torr. The temperature influence on the structure and morphology of deposited layers is investigated in the crystallization region. T M Ratcheva-Stambolieva et al, Phys Stat Sol (a), 16 (l), 1973, 315322.
32. NUCLEONICS 32 88. Dynamics of intense relativistic electron beams in toroidal fields. (USA) Intense relativistic electron beams were propagated around a 180” toroidal sector to study beam dynamics in toroidal fields. The major &an rlr;t-+ r\P 111°C nl,...” LIcI_LII UlllL ,,nrlnr “I&“_&mnrl;t;~“n ~“II~,LI”IIYfr\r 1”I “nl,+ral;~at;r\n II~UI‘II,,Lc&I,“II “I rnlF_4%1~” ati,l-ll*-JLlD *l(lD‘a,“‘,& R x B and scaled as yZ/B,, where Z is the propagated distance, Bi the toroidal field. and Y the relativistic factor. This is indicative of curvature and Vi drifts: Use of conducting walls caused an additional F x B drift around the chamber due to image current forces. Analysis of the distortion of a propagating rectangular beam shows that beam electrons follow field lines. Preliminary experiments on counterstreaming beams show inefficient reflection of beams from opposing diodes. Application of these results to beam injection and confinement in toroidal magnetic field is discussed. J Benford et al, J Appl Phys, 45 (4), 1974,1657-1666.
33. GENERAL
PHYSICS AND ELECTRONICS
33 89. Atomic beam velocity distributions with a cooled discharge source. (USA) Time-of-Sight measurements have been made for hydrogen, nitrogen and metastable helium, argon, and nitrogen beams emerging from a cooled discharge source, in order to determine the velocity distributions in these beams. We observe typically 85% H and 15% Hz relative beam number densities from a hydrogen discharge, and 10% N and 90% N2 relative beam number densities from a nitrogen discharge. The results show the effects of variation of the source gas pressure, microwave power, cooling rate, and in the case of a hydrogen discharge, the effect of adding water vapour to enhance dissociation. Argon seeding of the hydrogen discharge has been investigated as a means of determining the beam temperature without resorting to direct velocity or time-of-flight measurements. Some results are also given for room-temperature and low-temperature beams, obtained without a discharge. T M Millar, J Appl Phys, 45 (4), 1974, 1713-1720. 33:16 90. A molecular heam study of reactive nucleation of thin films: ---_...._- ___-c-l-_!__I_ _____~_1_,r T” * \ magnesrum “II perr”arnunr smgre crysuus. \“&-I,
The reactive nucleation of Mg on Ge (lOO), (11 l), and (211) surfaces was studied with the molecular beam technique. In this system Mg reacted with the substrate to form a semiconducting germanide Ma,Ge. For incident Ma fluxes of 10’2-1013 crnm3 set-i. the aermsnide nucleated at substrate temperatures of the order’of 350°C. Nucleation of the germanide on Ge (100) occurred at submonolayer Mg coverages indicating an island configuration for critical nuclei of Mg,Ge A HCP-Mg film could be grown by depositing on substrates held at room temperature. HCP-Mg films of the order of lo*-lo3 monolayers alloyed rapidly at 125°C to form the germanide. K J Matysik et al, J Vat Sci Technol, 11(2), 1974,493497. 33 91. Macroscopic particle motion in quadruple fields. (USA) The motion of ions in quadrupole field spectrometers was simulated using large particles (l&40 p diam) that can be visually observed, with appropriate scaling of the voltage and frequency parameters. In air, the motion of the large particles is damped by the viscous medium, but their stability properties are still governed by the Matheiu equation. A new method is suggested for pulsing ions out of the , >:-^..“:^....l yuauluyul= ,..“,l....^^l^ _“^” “...^&.^....,... J-UIIIIeuDI”II&l. I11&%Xi >yu.~1”lllrr=l. N Rey Whetten, J Vat Sci Technol, 11(2), 1974, 515-518. 41