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Effect of firing temperature and glass content on the electrical properties of thick film capacitors
World Abstracts on Microelectronics and Reliability
Laser-trimmed thin-film resistors hold voltage references steady. ROBERT NEIDORFF. Electronics, 131 (16 June 1982). Temperature-compensated JFET design delivers stable reference, while continuous trimming with YAG laser hones accuracy. Non-hermetic packaging for hybrid microcircuits. Dr. JERRY E. SERGENT and DENNIS R. KLING. Electron. Packaging Prodn, 170 (May 1982). The cost of hermetic packaging continues to increase, and non-hermetic packaging techniques may not meet system reliability requirements. A combination of the two may provide the most cost effective solution. Aging degradation of Ni and NiCr-Ni thin film conductor systems. A. GORECKA-DRZAZGA and D. MUSZYNSKA. Electrocomponent Sei. Technol. 9, 191 (1982). In this paper an experimental procedure for the evaluation of the Ni and N i C r - N i new low cost conductor systems is described. The possibility of an application of these conductor systems as a contact material for thin film resistors has been examined. A special test pattern with intermittent pattern resistors and meander patterns of conductor and resistive material was applied. The quality of thin film resistor contacts is defined by the constancy of their electrical and physical properties during exploitation. Following the R. T. Galla distributed parameter analysis model the calculation of the aging degradation of the Ni and N i C r - N i conductor systems has been carried out. Considering the degradation values it seems that the Ni one-component conductor system is superior to the NiCr Ni two-component system. From this investigation we can conclude that the quality of studied conductor systems is satisfactory in applications where corrosion resistance is not critical.
l/fnoise in RU-based thick-film resistors. T. M. CHEN,S. F. SU and D. SMITH. Solid-St. Electron. 25 (8), 821 (1982). The resistance and l / f noise of ruthernium-oxide based thick film resistors were studied over the temperature range of 77 425°K. The experimental results show that the resistance and the l / f noise have m i n i m u m values around T = 350K and T = 280K respectively. The 1If noise follows the relation S v ( f ) = (K1V2/f). A noise generation model based on the fluctuation of tunneling current in metal-insulatormetal units was used to explain the observed frequency and temperature dependence of the I / f noise. Strange temperature characteristics of RuO2-based thick film resistors. TosHIO INOKUMA, YOSHIAKI TAKETA and MIYOSH1 HARADOME. Electrocomponent Sci. TechnoL 9, 205 (1982). One of the most desirable characteristics of a resistor is temperature independency. The resistance values of almost all the resistors, however, change by self-heating and/or by a fluctuation of atmospheric temperature. The temperature coefficient of resistor (TCR) becomes larger as the resistance decreases, especially in thick film resistors. Therefore, the improvement of this property has been greatly desired and various kinds of methods of getting TCR zero are being investigated now. For example, in the case of thick film resistors, there is a method of doping some materials such as CuO, CdO, F%O3, etc. with conductive elements or glass frits. In some experiments on improving the electrical properties of the thick film resistors, we have found that some, the TCRs of which are nearly zero, can be made easily by doping with M n O 2 the conductive element RuO 2 of the thick film resistors, and this MnO2-doped resistor possesses
9. E L E C T R O N ,
ION
High rate reactive ion etching using a magnetron discharge. HARUO OKANO, TAKASHI YAMAZAKIand YASUHIROHORIIKE.
405
a low TCR; they all have the same low TCR, from low to high resistivity.
Allowable power in NiCr film resistors. T. BERLICKI and E. PROOOW. Electrocomponent Sci. Technol. 9, 209 (1982). This paper reports the dependence between the power required to cause destruction and the dimensions of resistive films, i.e. the width and thickness. The dependence has been analysed using destruction phenomenon models which consider the increase of temperature of the resistive films and the films defects. Results show that the power value required to cause destruction rises linearly with the width of the resistor films and is exponentially proportional to the sheet resistance. Thick-film materials for hybrids. MARTIN COLEMAN. Radio Electron. Engr 52 (5), 227 (1982). This paper briefly describes four areas of work involved in trying to establish the reliability and limitations of thick-film materials. One of the most widely used resistor systems, Du Pont 1400, has been extensively examined and long-life stability predictions are made. The possibility of replacing gold conductors with lower cost silver alloys depends critically upon controlling or eliminating silver migration, and the conditions under which migration occurs are described. The replacement of alumina substrates with alternative materials such as enamel steel, polymer board or glass is also reported, and the behaviour of the thick film materials has been found to be generally inferior to those on alumina. The Du Pont CMS nitrogenfireable resistor, conductor and dielectric system has been evaluated and the properties found to be comparable with air-fireable systems. The effect of sequential heat treatment on resistance and temperature coefficient of resistance (TCR) of NiCr thin films. B. STEPIEN and K. WOJTCZAK. Electrocomponent Sci. Technol. 9, 213 (1982). Measurements have been made of resistivity as a function of temperature in the range 290 to 600°K for vacuum deposited NiCr thin films subjected to different heat treatments in air. While the films prior to heat treatment exhibit a negative T C R in the range 290 to 390°K, after heat treatment the TCR becomes positive and almost constant, in the temperature range 290 to 600°K. The TCR increases when further sequential cycles of heat treatment are applied. The influence of electrical pulses on thick film (Du Pont 1421 Birux) resistors. J. M. KOZLOWSKIand M. TANCULA.Electrocomponent Sci. Technol. 9, 185 (1982). This paper presents data on the effect of electric pulses on thick film resistors made using Du Pont 1421 Birox resistor pastes. Resistance changes during the application of the electric pulses were investigated. Two types of change were observed: reversible and irreversible (i.e. catastrophic). In order to illustrate the causes of these changes, observations of the film on a scanning electron microscope were made. Microcracks were observed in the film, which were mostly responsible for the permanent resistance changes. Effect of firing temperature and glass content on the electrical properties of thick film capacitors. S. LEVPAVUORI and A. UUSlMAKI. Electrocomponent Sci. Technol. 9, 179 (1982). A study was carried out to investigate the effects of the firing temperature of thick film capacitors on the capacitance density, loss factor and breakdown voltage. These effects were studied by varying the firing temperature and glass content of the dielectric paste and by using different types of electrode paste. The active part of the prepared paste was barium titanate and glass binder lead borosilicate glass.
AND
LASER
BEAMS
Solid-St. Electron. 25, 166 (1982). A high rate RIE technology has been developed using a magnetron discharge, which pro-
Laser-trimmed thin-film resistors hold voltage references steady. ROBERT NEIDORFF. Electronics, 131 (16 June 1982). Temperature-compensated JFET design delivers stable reference, while continuous trimming with YAG laser hones accuracy. Non-hermetic packaging for hybrid microcircuits. Dr. JERRY E. SERGENT and DENNIS R. KLING. Electron. Packaging Prodn, 170 (May 1982). The cost of hermetic packaging continues to increase, and non-hermetic packaging techniques may not meet system reliability requirements. A combination of the two may provide the most cost effective solution. Aging degradation of Ni and NiCr-Ni thin film conductor systems. A. GORECKA-DRZAZGA and D. MUSZYNSKA. Electrocomponent Sei. Technol. 9, 191 (1982). In this paper an experimental procedure for the evaluation of the Ni and N i C r - N i new low cost conductor systems is described. The possibility of an application of these conductor systems as a contact material for thin film resistors has been examined. A special test pattern with intermittent pattern resistors and meander patterns of conductor and resistive material was applied. The quality of thin film resistor contacts is defined by the constancy of their electrical and physical properties during exploitation. Following the R. T. Galla distributed parameter analysis model the calculation of the aging degradation of the Ni and N i C r - N i conductor systems has been carried out. Considering the degradation values it seems that the Ni one-component conductor system is superior to the NiCr Ni two-component system. From this investigation we can conclude that the quality of studied conductor systems is satisfactory in applications where corrosion resistance is not critical.
l/fnoise in RU-based thick-film resistors. T. M. CHEN,S. F. SU and D. SMITH. Solid-St. Electron. 25 (8), 821 (1982). The resistance and l / f noise of ruthernium-oxide based thick film resistors were studied over the temperature range of 77 425°K. The experimental results show that the resistance and the l / f noise have m i n i m u m values around T = 350K and T = 280K respectively. The 1If noise follows the relation S v ( f ) = (K1V2/f). A noise generation model based on the fluctuation of tunneling current in metal-insulatormetal units was used to explain the observed frequency and temperature dependence of the I / f noise. Strange temperature characteristics of RuO2-based thick film resistors. TosHIO INOKUMA, YOSHIAKI TAKETA and MIYOSH1 HARADOME. Electrocomponent Sci. TechnoL 9, 205 (1982). One of the most desirable characteristics of a resistor is temperature independency. The resistance values of almost all the resistors, however, change by self-heating and/or by a fluctuation of atmospheric temperature. The temperature coefficient of resistor (TCR) becomes larger as the resistance decreases, especially in thick film resistors. Therefore, the improvement of this property has been greatly desired and various kinds of methods of getting TCR zero are being investigated now. For example, in the case of thick film resistors, there is a method of doping some materials such as CuO, CdO, F%O3, etc. with conductive elements or glass frits. In some experiments on improving the electrical properties of the thick film resistors, we have found that some, the TCRs of which are nearly zero, can be made easily by doping with M n O 2 the conductive element RuO 2 of the thick film resistors, and this MnO2-doped resistor possesses
9. E L E C T R O N ,
ION
High rate reactive ion etching using a magnetron discharge. HARUO OKANO, TAKASHI YAMAZAKIand YASUHIROHORIIKE.
405
a low TCR; they all have the same low TCR, from low to high resistivity.
Allowable power in NiCr film resistors. T. BERLICKI and E. PROOOW. Electrocomponent Sci. Technol. 9, 209 (1982). This paper reports the dependence between the power required to cause destruction and the dimensions of resistive films, i.e. the width and thickness. The dependence has been analysed using destruction phenomenon models which consider the increase of temperature of the resistive films and the films defects. Results show that the power value required to cause destruction rises linearly with the width of the resistor films and is exponentially proportional to the sheet resistance. Thick-film materials for hybrids. MARTIN COLEMAN. Radio Electron. Engr 52 (5), 227 (1982). This paper briefly describes four areas of work involved in trying to establish the reliability and limitations of thick-film materials. One of the most widely used resistor systems, Du Pont 1400, has been extensively examined and long-life stability predictions are made. The possibility of replacing gold conductors with lower cost silver alloys depends critically upon controlling or eliminating silver migration, and the conditions under which migration occurs are described. The replacement of alumina substrates with alternative materials such as enamel steel, polymer board or glass is also reported, and the behaviour of the thick film materials has been found to be generally inferior to those on alumina. The Du Pont CMS nitrogenfireable resistor, conductor and dielectric system has been evaluated and the properties found to be comparable with air-fireable systems. The effect of sequential heat treatment on resistance and temperature coefficient of resistance (TCR) of NiCr thin films. B. STEPIEN and K. WOJTCZAK. Electrocomponent Sci. Technol. 9, 213 (1982). Measurements have been made of resistivity as a function of temperature in the range 290 to 600°K for vacuum deposited NiCr thin films subjected to different heat treatments in air. While the films prior to heat treatment exhibit a negative T C R in the range 290 to 390°K, after heat treatment the TCR becomes positive and almost constant, in the temperature range 290 to 600°K. The TCR increases when further sequential cycles of heat treatment are applied. The influence of electrical pulses on thick film (Du Pont 1421 Birux) resistors. J. M. KOZLOWSKIand M. TANCULA.Electrocomponent Sci. Technol. 9, 185 (1982). This paper presents data on the effect of electric pulses on thick film resistors made using Du Pont 1421 Birox resistor pastes. Resistance changes during the application of the electric pulses were investigated. Two types of change were observed: reversible and irreversible (i.e. catastrophic). In order to illustrate the causes of these changes, observations of the film on a scanning electron microscope were made. Microcracks were observed in the film, which were mostly responsible for the permanent resistance changes. Effect of firing temperature and glass content on the electrical properties of thick film capacitors. S. LEVPAVUORI and A. UUSlMAKI. Electrocomponent Sci. Technol. 9, 179 (1982). A study was carried out to investigate the effects of the firing temperature of thick film capacitors on the capacitance density, loss factor and breakdown voltage. These effects were studied by varying the firing temperature and glass content of the dielectric paste and by using different types of electrode paste. The active part of the prepared paste was barium titanate and glass binder lead borosilicate glass.
AND
LASER
BEAMS
Solid-St. Electron. 25, 166 (1982). A high rate RIE technology has been developed using a magnetron discharge, which pro-