Effect of reactive gas dopants on the MgP surface in AC plasma display panels

World Abstracts on Microelectronics and Reliability Effects of annealing on localized states in amorphous Ge films. S. HASEGAWAand M. KITAGAWA.Solid St. Commun. 27, 855 (1978). Annealing behaviors of the activation energy for the electrical conduction E v that for the thermoelectric power E~, the optical gap E~pt, and the spin density in evaporated amorphous Ge are investigated. E~ is independent of E~ and Egopt, and the rates of variation of E~pt and Es with annealing temperature are connected by AE~Pt = 2.5AE#. It is suggested that the position of the Fermi level does not change with annealing in contrast with amorphous Si, and the edge of the localized tail state shifts with annealing. Piezoresistanee effect in Pbo,s2Sno.lsTe films. ANTONI ROGALSKIand JANUSZ RYBINSKI.Electron Technol. 11, (1/2) 75 (1978). Piezoresistance coefficient of longitudinal and transverse strain sensitivity has been measured in n- and p-type Pbo.s2Sno.lsTe films prepared on mica substrates and oriented in [111] direction. An attempt has been made to explain the dependence of the gauge factor on the angle between the stress direction and the current. Photocurreuts in silicon nitride films. FATEH MOHAMMAD NAZAR. Int. J. Electron. 45, (4) 401 (1978). Photocurrents in silicon nitride films deposited by pyrolytic reaction between silane and ammonia on silicon substrates of resistivities 0.01 f~-cm to 10f~-cm, both n and p-type, have been studied. Only nitride films on O.If~-cm p-Si and 10fl-cm n-Si substrates show photocurrents; the former being symmetric with polarity of the applied bias while the latter are strongly polarity dependent. It is suggested that the symmetric photocurrents which give log AI-V 1/2 behaviour may be due to the same localized levels giving rise to the dark Poole-Frenkel conduction. The asymmetric photocurrents may be a property of the Si3N4-Si interface. It is concluded that the type and resistivity of the silicon used as substrates definitely affect the electrical characteristics of the silicon nitride films deposited on them. Effect of reactive gas dopants on the MgP surface in AC plasma display panels. W. E. AHEARN and O. SAHNI. I B M J. Res. Dev. 22, (6) 622 (November 1978). Experimental results are presented for the influence of controlled levels of important reactive impurities (N2, 02, H20, CO2) on the aging characteristics of the operating voltages of ac plasma display panels. Details are also given of a novel method of modifying the electronic properties of MgO surfaces by discharge processing in an oxygen-doped Ne 0.117oAr Penning mixture. Electrical conduction in thin zinc rf sputtered films. C. R. TELLIER. Vueuum 28, (8/9) 321 (1978). Experiments on the thickness dependence variations in electrical resistance of thin rf sputtered zinc films before and after thermal ageing are consistent with a two-layers model: the first layer about 150 A thick is the thinner continuous layer that may be obtained; electronic conduction in the second layer occurs according to the Mayadas Shatzkes model related to polycrystalline films with a constant grain size. The linearized equations and the "effective Fuchs-Sondheimer" model previously reported are convenient tools for describing the conduction in the upper layer and allow an experimental determination of the carrier reflection coefficients at grain-boundaries and film surfaces. l / f noise in metal films : the role of the substrate. P. DUTTA, J. W. EBERHARD and P. M. HORN. Solid St. Commun. 27, 1389 (1978). We have examined the temperature dependence of voltage ("l/f") noise in Cu and Ag films on quartz and sapphire substrates. Our data suggest that two types of voltage noise occur simultaneously in metal films. One type of noise depends on the substrate and is weakly temperaturedependent; the remaining noise is strongly temperaturedependent and independent of the substrate. M.g. 19/3~C

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An experimental study of the indium antimonide thin film transistor. A. VAN CALSTER.Solid-St. Electron. 22, 77 (1979). In this paper a survey is given of our experimental investigations on the InSb thin film transistor (TFT). The best characteristics were obtained on a two-sided thin film transistor, made by flash evaporations of InSb on a heated substrate of 250°C, followed by an annealing at 350°C for 30 minutes. Furthermore it was found that the presence of minority carriers obstruct the saturation of the transistor characteristics at room temperature. This negative influence of the minority carriers is weakened at lower temperatures, which makes the InSb TFT more attractive for operations in a cryogenic environment. Ultra-high vacuum systems for surface research. Y. MARGON1NSKI. Vclcuum 28, (12) 515. During the last 20 years, surface research has been one of the fastest growing fields in physics and physical chemistry. Yet such a development would have been impossible without a parallel advance in ultra-high vacuum (uhv) techniques. In this paper a short survey is given of uhv systems in surface research from 1927 to the present day, with special emphasis on the developments since the 1950s when NASA was established. To illustrate modern uhv technology, a detailed description is given of two commercially available systems, specially designed for surface research. Oxygen content and oxide barrier thickness in granular aluminium films. P. ZXEMANN, G. HElM and W. BUCKEL. Solid St. Commun. 27, 1131 (1978) Granular aluminium films were prepared by evaporation in an oxygen atmosphere. The oxygen content Co of the films was determined by Rutherford backscattering. The superconducting transition temperature Tc is measured as a function of the oxygen concentration. From the results the thickness of the oxide barriers is derived by applying a model of spherical granula. This model is confirmed by the observed linear dependence Tc oc Co. New substrate causes a stir. JERRY LYMAN. Electronics p. 94 (7 December 1978). Porcelain on steel could be key to size and cost barriers of conventional alumina material in thick-film hybrids. A phenomenological study of a.c. gas panels fabricated with vacuum-deposited dielectric layers. JOHN F. O'HANLON. I B M J. Res. Dev. 22, (6) 626 (November 1978). This paper presents the results of an experimental investigation of a.c. gas display panel parameters. The ignition and extinction voltages were measured for panels filled with Ne 0.1% Ar gas to pressures ranging from 0.75 x 104 Pa to 8 x 104 Pa (50 torr to 600 torr). The panels were constr ucted with chamber spacings, d, of 0.56 x 10 2cm to 2 x 10 2cm, and electrode widths, x, of 1.5 x l(I-3cm to 0.1 cm. Scaling of the Paschen minimum was not found to hold for the narrowest chamber spacing, The dependence of ignition voltage on linewidth was found to be proportional to e x p ( - 1 . 6 x / d ) for ( x / d ) < l. An electron diffusion process was invoked to explain this behavior. Non uniform recombination in thin silicon-on-sapphire films. SORIN CRISTOLOVEANU. ALAIN CHOVET a n d

GEORGES

KAMARINOS.Solid St. Electron. 21, 1563 (1978). Recombination parameters of SOS films are deduced from the study of the magnetoconcentration effect in double-injecting structures. The method of measurement is based on an original theory succinctly developed; it takes into account general SRH bulk and surface recombination laws; moreover inhomogeneous distributions of recombination centers are considered. Experimental results (current-voltage characteristics of such "magnetodiodes'), when analysed according to the proposed method, lead to more realistic values of the