Effects of fast-neutron irradiation on pyrolytic silicon carbide

Effects of fast-neutron irradiation on pyrolytic silicon carbide

JOURNAL OF NUCLEAR 33 MATERIALS 17-22. (1969) EFFECTS OF FAST-NEUTRON 0 NORTH-HOLLAND IRRADIATION PUBLISHINQ ON PYROLYTIC CO., AMSTERDAM S...

602KB Sizes 73 Downloads 121 Views

JOURNAL

OF NUCLEAR

33

MATERIALS

17-22.

(1969)

EFFECTS OF FAST-NEUTRON

0 NORTH-HOLLAND

IRRADIATION

PUBLISHINQ

ON PYROLYTIC

CO., AMSTERDAM

SILICON CARBIDE

R. J. PRICE Gulf General

Atomic

Incorporated,

John

Jay

San Diego, Received

Samples

of pyrolytic

were irradiated at

decreased from

between

showed

460

an isotropic

with

increasing

and

parameter

scopic accuracy. X-ray

changes

dimensional Irradiation

caused

line broadening

generation

of internal

change in Young’s

were

changes that

“C.

qui Btait attribuable internes.

to the macroexperimental increase

was attributable

Proben wurden

de carbure

4,2x

1021 nvt

comprises

(E>0,18

entre

presentaient

une

460

MeV) et

aus

avec la temperature

de 0,35%

8. 460 “C a 0,05%

parametres

1.

Introduction

“C.

Les

d’irradiation

qui

und Temperaturen

zwischen zeigten

Btaient

Bgales

die mit steigender

x 1021 nvt,

B-Sic

0,18 MeV)

460 und 1040 “C unter-

eine isotrope

lineare

Aus-

Bestrahlungstemperatur

der

Messgenauigkeit

stimmen

Dimensionsanderungen

iiberein.

lung

Verbreiterung

trat

eine

leichte

zurtickgefiihrt

aux

wird.

die Pinde-

mit den makroskopischen Durch

reflexe ein, die auf die Entstehung

croissante,

a 1040 “C. Les variations

reticulaires

polykristallinem

(2,0-4,2

sucht. Die Proben

Innerhalb

Bchantillons lineaire

pyrolytischem

rungen der Gitterparameter

temperatures

isotrope

significative

de rupture.

von 0,35 y0 bei 460 “C auf 0,05 O/obei 1040 “C abfiel.

,!l pyrolytique

a des doses de 2 a 8. des

1040

dilatation

diminuait, des

de silicium

ou du module

mit Neutronen

dehnung, ont 6th irradies

de deformations

pas de variation

in

to the

modulus or the modulus of rupture.

Des echantillons

d’Young

erreurs un leger

des raies des rayons X

a la creation

avait

aux

produisait

de l’elargissement

11 n’y

du module

strains. There was no significant

et polycristallin

Science,

macroscopique,

L’irradiation

accroissement

equal

slight

p&s.

The

within a

de dimension

that

1040 “C. The

and Applied

1969

d’experience

temperature

at

for Pure

USA

variations

MeV)

expansion

irradiation

0.35 y0 at 460 “C to 0.05%

lattice

1040

linear

Laboratory

27 February

/l-silicon carbide

to 2.0 to 4.2 x 1021nvt (E>O.lS

temperatures

samples

polycrystalline

Hopkins

California 92112,

BestrahRontgen-

innerer Spannungen

Bezeichnende

Anderungen

Elastizitiits-

oder Bruchmoduls

traten

pyrolytic

silicon

are

carbide

die der

nicht

des

auf.

therefore

of

considerable interest. Previous work has dealt with the effects of low neutron exposures (less than 102i nvt) on the dimensions and lattice parameters of single crystals of oc-silicon carbide s-5). The effects of intermediate neutron exposures (up to 1.8 x 1021 nvt) at 250, 475, and 700 “C on the dimensions, lattice parameters, thermal diffusivity, and Young’s modulus of low-density self-bonded polycrystalline /?-silicon carbide have also been reported 6). In the present work, pyrolytic, polycrystalline /l-silicon carbide was irradiated to 2.0 to 4.2x 1021 nvt (E>0.18 MeV) at temperatures between 460 and 1040 “C. The

Pyrolytic silicon carbide is used as a coating for the particles of uranium or thorium oxide or carbide that form the fuel for high-temperature gas-cooled nuclear reactors 1). The properties of silicon carbide that make it suitable for use as a fuel-coating material are its hightemperature strength, low neutron absorption cross-section, and low permeability to fission products. Pyrolytic silicon carbide has also been considered as a coating to protect against the accidental oxidation of moderator graphite in high-temperature nuclear reactors 2). The effects of fast-neutron irradiation at high temperatures on the structure and physical properties of 17

18

R.

changes

in dimensions,

density,

meter, X-ray line-broadening, and modulus structure

of rupture

and physical

lattice

J.

para-

Young’s modulus,

were measured. properties

The

of the un-

irradiated material are reported elsewhere 7).

PRICE

diffraction Norelco

measurements diffractometer

Experimental

was then

computed

for systematic

The material was prepared by the decomposition

of methyltrichlorosilane-hydrogen

mix-

made

with

copper

a

Ka

radiation, and traces were obtained for peaks with indices up to (333). The lattice parameter from

using an extrapolation 2.

were using

the

the peak positions

procedure

that corrects

errors in sample positioning

di~ractometer

geometry 9). X-ray

in

peak

widths were measured and corrected for doublet

tures in a fluidized bed of particles at 1400 “C. The total gas flow rate was 10 000 ml/min with

and

instrumental

broadening

using

Jones’

carbide was out into strips ~neasuring about 0.6 cm x 0.1 cm x 0.01 am. The lengths of the strips were measured with

carbide strip samples were then estimated by calculating their difference in temperature from the fuel samples. The mean sample temperatures are considered accurate to within i 50 “C and in addition the temperatures were subject to fluctuations of & 50 “C during the course of the irradiation. The neutron fluxes were calculated from the analysis of nickel and iron dosimeter wires.

method 10). A potassium chloride standard was used. The correction curves appropriate for a 5 to 10% of the hydrogen carrier gas passing line profile intermediate in shape between a througl~ a n~ethyltrichlorosilane bubbler at Gaussian and a Lorenzian and for a diffractoroom temperature. The fluidized bed was meter with a line source were used ii). contained in a 3.8 cm diameter graphite tube The modulus of rupture and Young’s modulus and the initial bed surface areas were between were measured in 3-point bending at room 500 and 2000 cma. The reactant input flux was between 2 and 10 x IO-6 moles of silane~rni~~~crnz temperature, using techniques described previously 12). of bed surface. Other details of the deposition About ten strip samples were included in two technique are given elsewhere 8). or three cells in each of four irradiation The material consisted of /I-silicon carbide capsules. The neutron exposures and mean and had a density of 3.17 to 3.20 g/cm3 operating temperatures of each group of samples (theoretical density: 3.21 g/cma). The grain size are shown in table 2. The irradiations were was less than 1 pms). X-ray diffraction patterns carried out in the Engineering Test Reactor showed no evidence for excess silicon or carbon. (ETR) at Idaho Falls, Idaho, in capsules whose A typical impurity analysis is shown in table 1. primary purpose was to test coated-particle Other structural properties are reported elsefuel, and whose design has been described 13). where 7). The operating temperatures of the coatedSamples for irradiation were obtained by particle fuel samples were monitored with placing graphite discs 0.7 cm diameter x0.1 cm thermocouples and regulated by control of the thick in the fluidized bed. After coating, the gas composition in heat-transfer gaps around discs were cut with a diamond wheel and the the crucibles. The temperatures of the silicon graphite removed by grinding. The silicon

a machinist’s microscope to an accuracy of 0.02%. Densities were measured by suspension in methylene iodide-benzene mixtures. X-ray

TABLE

Spectrographic

Mn 4 *

Measured

1

impurity analysis of pyrolytic carbide (ppm) Mg 8

Fe 20

Ni (10

Al

Cu

Cl*

60

20

87

by neutron activation

silicon

analysis.

3.

Results and discussion

3.1.

CHARGES

IN

DIiVfEBSIONS

AND

LATTICE

PARAMETER

The mean linear dimensional

expansions

and

EFFECTS

OF

FAST-NEUTRON

19

IRRADIATION

TABLE 2 Change in linear dimensions, lattice parameter and X-ray Irradiation

P-13-F

I

1

P-13-H P-13-J P-13-K

y0

S.D.)

(f

Increase in RMS internal

Mean 1 temperature

Cell no.

of silicon carbide during irradiation

Mean expansion,

conditions

Veutron exposure Capsule no.

line-broadening

Linear

Lattice

strain

dimensions

parameter

(x 104)

!

(“Cl

(

630

0.24 f

0.02

0.20 f

0.02

5.0

2.8 x 1021

1020

0.08 i

0.04

0.03 * 0.02

4.0

2.7 x 1021

1010

0.06 & 0.04

0.05 f

0.02

3.0

3.8 x 1021

700

0.30 + 0.02

0.33 f

0.02

3.5

4.2 x 1021

980

0.07 * 0.05

0.07 f

0.01

3.5

3.8 x 1021

1040

0.06 f

0.03

0.10 + 0.04

7.0

2.7 x 1021

460

0.36 f

0.03

0.34 & 0.04

3.5

2.7 x 1021

620

0.23 f

0.03

0.19 f

0.03

5.0

2.0 x 1021

1010

0.03 f

0.04

0.05 f

0.02

3.0

2.8x

1021

1

i

changes in lattice parameter are shown in table 2. The standard deviations of the mean

Lattice Parameter

Source

0

macroscopic expansions were obtained from the experimental spread among about ten similar strips irradiated under each set of conditions. Lattice-parameter measurements were made after lumping the similar strips together, and the standard deviation of the estimate was obtained from the curve-fitting statistics of the extrapolation procedure. The lattice parameter expansions were the same as the macroscopic

Pyrolytic

1

0.

3:17

p=

- 3.20

[present work]

a Single

cl

[Primak

Crystals

er~_I.~)]

A

a Single

Crystals

0

a Single

Crystals

[Ealarin4)]

[Pravdyuka_al.‘)] Self-bonded

V

6.

p-

2.1

-

2.2

[Thorne&A_.6)]

expansions within the accuracy of the measurements. Measurements of the change in density showed that the changes were isotropic. Previous work 5, a) has shown that radiation-induced

expansion

the

of silicon carbide

saturates and becomes independent of exposure after a low neutron exposure (1 to 3 x lo20 nvt). The expansion level decreases with increasing irradiation temperature. The expansions obtained in the present work are plotted as a function of irradiation temperature in fig. 1, together with other values reported in the literature for exposures high enough for saturation to have occurred. The linear expansion decreases from about 1% for irradiations near room temperature to about 0.05% at 1000 “C. There does not appear to be any systematic dependence on the gram size or porosity of the material, and 01 (hexagonal) silicon carbide behaves similarly to fi (cubic) silicon carbide.



400

200

Irradiation

Fig.

1.

Saturation

600

800

temperature

(‘C)

radiation-induced

IO00

expansion

of

silicon carbide as a function of irradiation temperature (neutron

exposures > 1020 nvt).

There is no measurable difference between the lattice expansion and the macroscopic expansion. The saturation of the expansion as the neutron exposure increases, and the monotonic decrease in expansion with increasing irradiation temperatures are typical of the behavior of isotropic or near-isotropic ceramic materials 14). Irradiation with fast neutrons creates equal

20

R.

numbers of interstitials

and vacancies,

in various

stages

occurs

Saturation

defect production retention

I

400

311 220

331

222

I

422

420

333

changes

rate equals the

rate. The amount of damage

decreases with increasing

temperature

200 111

property

of the property

when the annihilation

Reflection

The

of aggregation

and are responsible for the observable changes.

PRICE

most of

which are removed by mutual annihilation. rest remain

J.

because

irradiation

the annihilation

rate is

thermally activated, while the defect production rate is fixed by the neutron flux. Because the dilatation associated with an interstitial atom

7

is greater than the relaxation around a vacancy, an overall expansion results. Single point defects

c

and small point-defect clusters change both the lattice parameter and the bulk dimensions whereas large clusters of defects equally, condense to form dislocation loops that cause a larger fractional change in the bulk dimensions than in the lattice parameter. In the present work the experimental results do not show a significant difference between the lattice para-

0

b-

"0

(b)

Irradiated at 1040°c

to 3.8

X

IO

21

"Yt

0 /

4

x 0

3

B 92

I 0 6

meter expansion and the macroscopic linear expansion (table 2). The lack of a difference indicates that most of the point defects are present as single defects or small clusters.

(c)

Irradiated

to 2.7

X

IO

However, those data do not exclude the possibility that dislocation loops also are formed. Both interstitial and vacancy loops could be present without changing the equality between the

bulk

provided

and

lattice

dimensional

changes,

that the total loop area is equal for

each type.

If, as seems more probable,

inter-

stitial loops predominate, up to 10e3 of the atoms could be located in such loops before the resulting linear expansion would exceed the lattice parameter change by more than 0.03%, which is the aocuracy of the present measurements. The possible existence of dislocation loops will be referred to again in the following section. 3.2.

X-RAY

LINE BROADENING

If the corrected width p of an X-ray diffraction peak is measured as a function of the Bragg angle 0, a plot of B cos 8 against sin 8 may be used to estimate the mean internal

0

1.0

0.5 Sin

0

Fig. 2. Plots of j9 co9 0 versus sin 0 for pyrolytic silicon carbide (a) unirradiated, (b) irradiated to 3.8x 1021 nvt (E>0.18 MeV) at 1040 “C, and (c) irradiated to 2.7~ 1021 nvt (E>O.18 MeV) at 460 “C. /I = corrected peak width, 0 = Bragg angle.

strain 15). For material where particle-size broadening is negligible, such a plot gives a straight line through the origin whose slope is equal to 2127~ times the root-mean-square (RMS) strain. Line broadening in pyrolytic silicon carbide is all attributable to internal strain 7). When the corrected peak widths from the silicon carbide irradiated in the present experi-

EFFECTS

OF FAST-NEUTRON

21

IRRADIATION

TABLE3 Mechanical property

Cell no.

1 2 and 3

changes in irradiated pyrolytic

Mean irradiated property

Mean Neutron exposure 1 temperature , (n/cm21 j (E>0118 MeV) 1 i0c, 2.8 x loal 2.8 x 1021

Xean unirradiated property >

-j&D.

I-___ __.~.

/Modulus of rupture/ Young’s

630 1020

ments were analyzed in this way it was found that the RMS strain increases slightly during irradiation. Examples of plots of p cos 0 against sin 0 before and after irradiation are shown in fig. 2. The increase in internal strain during irradiation was obtained from the irradiated peak widths by using the peak widths of unirradiated material in place of potassium chloride as the standard. The irradiation-induced line-broadening was assumed to be caused solely by internal strain, i.e. the lines in plots 2(b) and 2(c) were drawn through the origin. However, the scatter in the data is such that some particle-size broadening could have been present; this would correspond to the lines making a positive intercept on the ordinate axis. The increase in RMS internal strain for various irradiation conditions is shown in table 2. The increase in strain was very small in all cases, and was less than the strain in the as-deposited material (10-s). Since the crystal structure of ,?Gsiliconcarbide is cubic, there is no possibility of intergranular stresses arising from anisotropic dimensional changes of the grains. Single point defects or small defect clusters only increase the X-ray background intensity without causing line broadening. Therefore it is probable that the Iine broadening in the present experiments arises from the presence of dislocation loops ra)_ As stated in the previous section, the experimental uncertainty in the measurement of the lattice and bulk expansions allows for the possibility th&up to about 10-3 of the lattice atoms may be present in interstitial loops.

silicon carbide

1.18 & 0.19

1

1.04 & 0.25

3.3.

/

modulus

0.98 & 0.06 1.03 -& 0.05

MECHANICAL PROPERTIZS

Young’s modulus and the modulus of rupture of groups of samples irradiated in capsule P-13-F to 2.8 x 1021 nvt (_E>O.lS MeV) at 630 and 1020 “C were measured. The ratios of the irradiated values to the unirradiated values are shown in table 3. There was no significant change in mechanical properties after irradiation. The lack of any strength reduction is not surprising in view of the cubic structure and the absence of a mechanism for the generation of large intergranular strains. Also the amount of helium produced by (n, a) reactions in silicon carbide with the low impurity content of the present material would be very small.

4.

conclusions

I. Pyrolytic ~-silicon carbide irradiated to 2.0 to 4.2x 1021 nvt (E>0.18 MeV) at temperatures between 460 and 1040 “C undergoes an isotropic expansion. The linear expansion decreases from 0.35% at 460 “C! to 0.05~* at 1040 “C. 2. The increase in lattice parameter agrees with the increase in macroscopic dimensions within the accuracy of the measurements. 3. Irradiation causes a slight increase in X-ray peak width. The change is attributable to an increase in RMS internal strain of about 5 x 104. 4.

Irradiation causes no significant change in the elastic modulus or modulus of rupture of the samples.

R.

22

J.

PRICE

Acknowledgements The

author

is grateful

to

W.

H.

Ellis,

B)

17. J. Gagnon, and J. M. Dixon for experimental help, R. (3;. Mills for supervising the preparation of the material, Irradiation

and members

Group who constructed and operated

the irradiation capsules. The work was supported by the U.S. Atomic Energy Commission under Contract No. AT(04-3)-167, Project Agreement No.

7)

of the Capsule 1; 10)

17.

References 1) G. Hauser, Energ. Nucl. (Paris) 7 (1965) 100 2) J. L. Jackson, USAEC Report No. BNWL-

242 (Battelle-Northwest Laboratories, Richland, Washington 1966) 3) W. Primak, L. H. Fuchs and P. P. Day, Phys. Rev. 103 (1956) 1184 4) M. Bela&, Phys. Status Solidi, 11 (1965) K 67 Short Notes -7 N. F. Pravdyuk, V. A. Nikolaenko, V. I. Kapuchin and V. N. Kusnetsov, Properties of Reactor Materials and the Effects of Radiation Damage

12) 13)

14) 15) 16)

Proceedings, (ed. D. J. Littler; Butterworths, London 1962) p. 57 R. P. Thorne, V. C. Howard and B. Hope, Proc. Brit. Ceram. Sot. 7 (1967) 449 R. J. Price, USAEC Report No. GA-8883 (Gulf General Atomic Incorporated, San Diego, Calif., 1968) T. D. Gulden, J. Am. Ceram. Sot. 51 (1968) 424 R. E. Vogel, and C. P. Kempter, Acta Crystallogr. 14 (1961) 1130 F. W. Jones, Proc. Roy. Sot. (London) Ser. Al66 (1938) 16 H. P. Klug and L. E. Alexander, X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials (John Wiley & Sons, New York, 1954) 494 J. C. Bokros, and R. J. Price, Carbon 3 (1966) 503 F. D. Carpenter, J. 0. Barner, B. B. Spillane and W. P. Wallace, International Symposium on Developments in Irradiation Capsule Technology, p. 4.2.1 (ed. D. R. Hoffman) (USAEC Report CONF-660511, Washington, D.C.) (1966) R. S. Wilks, J. Nucl. Mat. 26 (1968) 137 G. K. Williamson and W. H. Hall, Acta Met. 1 (1953) 22 M. A. Krivoglaz and K. P. Ryaboshka, Phys. Metals Metallogr. 16 no. 5 (1963) 1