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Electrical fluctuations in silicon double injection devices
328
WORLD
ABSTRACTS
ON MICROELECTRONICS
preparation and the properties of crystals of compound semiconductors.
Irradiation effects in SiOz polymorphs. A. G. R m ~ z . Solid State Commun. 10 (1972), p. 127. Irradiation-induced changes in density and molar refraction of SiO2 polymorphs as well as saturation effects result from maximizing n-bonding and minimizing bond strain in Si-O ring configurations. Trivalent silicon and nonbridging oxygen defects are generated without signitic.ant atomic displacements. Irradiation behaviour of SiO~ is more similar to that of siloxane polymers than typical ionic or covalent crystals.
Investigation of defects in SiO2 layer by determining the activation energy of charge carrier diffusion. J. ZAK, D. LIS and S. MACZYNSKI. Electron Technology, Vol. 4, No. 3 (1972), p. 29. The rapidly growing production of integrated circuits, especially those of the MOS type, causes that the problem of fabrication of dielectric layers (above all, SiO2 layers) of high purity and of correct structure to be more and more important. A semiconductor coated with oxide is an integral part of numerous electronic instruments and circuits. Satisfactory performance of these devices depends, to a considerable degree, on the quality of the oxide itself and properties of the oxide--semiconductor interface. The present paper describes the results of investigations performed to identify the charge carriers introduced into oxide by the thermal oxidation process. The identification was effected by determining the activation energy of the diffusion process of mobile charge carriers in oxide.
A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination. H. J. J. DE MAN. Solid St. Electron. 15 (1972), p. 177. A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided 8. T H I C K - A N D T H I N - F I L M
ENGLISH and R. LINCOLN. Vacuum 21, No. 11, p. 529. The latest design improvements are given for the two following thin film monitors: (1) the quartz crystal oscillator mass monitor; (2) the modulated optical beam photometer for monitoring light transmission or reflection. Experimental performance data is also presented demonstrating their reliability and stability. A description is given of how the two instruments can be used together under automatically controlled deposition conditions to produce optical film systems to a high degree of repeatability without dependence on an operator.
RELIABILITY
junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.
The method for calculating capacitance-voltage characteristics of ideal MIS structures. A. JAKUBOWSKI and P. JAGODZII~ISKI.Electron. Technol. Vol. 4, No. 3 (1971), p. 37. It is shown in the present paper that having known the capacitance characteristic of an ideal MIS structure with given parameters *~, *s, xi, T and nf it is possible in a short time to determine, the characteristic of another ideal structure with the identical value of the semiconductor bulk potential u0 and with arbitrary values of the parameters mentioned above. If the value of ub in a given real MIS structure is determinated, "theoretical" characteristic of this structure may be obtained in a simple way. The nomograms presented in the paper enable fast determination of the potential u0 of an arbitrary real M I S structure with tuol <25 by using the experimental characteristic measured.
Inexpensive inverters generate Vc.¢ for portable MOS a p p l i c a t i o n s . B. FETTE. EDN/EEE, 15 December (1971), p. 51. Either of these multivibrators will provide the second supply voltage required to operate highthreshold MOS logic from portable, automotive or other single battery electrical systems.
Electrical fluctuations in silicon double injection devices. R. W. KNEPPER and A. G. JORDAN. Solid St. Electron. 15 (1972), p. 59. Studies of the electrical noise behavior of indium-doped silicon P+z:N+ double injection devices are reported. The work refers to the double injection portion of the device characteristic at a temperature of 77°K. The noise studied is attributed to fluctuations in the rate of recombination of carriers via the indium centers. From fitting theoretical and experimental results, the carrier lifetime is found to be 2"5 x 10-~ sec and the capture cross-section of neutral indium centers for electrons is determined to be 1.8 × 10 1~ cm 2.
COMPONENTS,
Recently developed instrumentation for control of v a c u u m deposited thin films. T. I. PUTNER, J.
AND
CIRCUITS AND MATERIALS
A n overview of today's thick-film technology. T. C. REISSlNG. Proc. I E E E 59, No. 10 (1971), p. 1448. How thick-film systems are used in all facets of today's electronic industry, starting with their initial application in the computer and defense industries, is described. As the state of the art grew, composition suppliers broadened their lines, developing new higher performance materials to meet changing and more sophisticated packaging requirements. The present technology offers advantages of simple processing, fast and inexpensive tooling systems, economy, quick turnaround time between need and prototype, using wider tolerance active devices, high reliability, and multilevel circuit capabilities. As a result, virtually all sectors of today's electrical and
WORLD
ABSTRACTS
ON MICROELECTRONICS
preparation and the properties of crystals of compound semiconductors.
Irradiation effects in SiOz polymorphs. A. G. R m ~ z . Solid State Commun. 10 (1972), p. 127. Irradiation-induced changes in density and molar refraction of SiO2 polymorphs as well as saturation effects result from maximizing n-bonding and minimizing bond strain in Si-O ring configurations. Trivalent silicon and nonbridging oxygen defects are generated without signitic.ant atomic displacements. Irradiation behaviour of SiO~ is more similar to that of siloxane polymers than typical ionic or covalent crystals.
Investigation of defects in SiO2 layer by determining the activation energy of charge carrier diffusion. J. ZAK, D. LIS and S. MACZYNSKI. Electron Technology, Vol. 4, No. 3 (1972), p. 29. The rapidly growing production of integrated circuits, especially those of the MOS type, causes that the problem of fabrication of dielectric layers (above all, SiO2 layers) of high purity and of correct structure to be more and more important. A semiconductor coated with oxide is an integral part of numerous electronic instruments and circuits. Satisfactory performance of these devices depends, to a considerable degree, on the quality of the oxide itself and properties of the oxide--semiconductor interface. The present paper describes the results of investigations performed to identify the charge carriers introduced into oxide by the thermal oxidation process. The identification was effected by determining the activation energy of the diffusion process of mobile charge carriers in oxide.
A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination. H. J. J. DE MAN. Solid St. Electron. 15 (1972), p. 177. A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided 8. T H I C K - A N D T H I N - F I L M
ENGLISH and R. LINCOLN. Vacuum 21, No. 11, p. 529. The latest design improvements are given for the two following thin film monitors: (1) the quartz crystal oscillator mass monitor; (2) the modulated optical beam photometer for monitoring light transmission or reflection. Experimental performance data is also presented demonstrating their reliability and stability. A description is given of how the two instruments can be used together under automatically controlled deposition conditions to produce optical film systems to a high degree of repeatability without dependence on an operator.
RELIABILITY
junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.
The method for calculating capacitance-voltage characteristics of ideal MIS structures. A. JAKUBOWSKI and P. JAGODZII~ISKI.Electron. Technol. Vol. 4, No. 3 (1971), p. 37. It is shown in the present paper that having known the capacitance characteristic of an ideal MIS structure with given parameters *~, *s, xi, T and nf it is possible in a short time to determine, the characteristic of another ideal structure with the identical value of the semiconductor bulk potential u0 and with arbitrary values of the parameters mentioned above. If the value of ub in a given real MIS structure is determinated, "theoretical" characteristic of this structure may be obtained in a simple way. The nomograms presented in the paper enable fast determination of the potential u0 of an arbitrary real M I S structure with tuol <25 by using the experimental characteristic measured.
Inexpensive inverters generate Vc.¢ for portable MOS a p p l i c a t i o n s . B. FETTE. EDN/EEE, 15 December (1971), p. 51. Either of these multivibrators will provide the second supply voltage required to operate highthreshold MOS logic from portable, automotive or other single battery electrical systems.
Electrical fluctuations in silicon double injection devices. R. W. KNEPPER and A. G. JORDAN. Solid St. Electron. 15 (1972), p. 59. Studies of the electrical noise behavior of indium-doped silicon P+z:N+ double injection devices are reported. The work refers to the double injection portion of the device characteristic at a temperature of 77°K. The noise studied is attributed to fluctuations in the rate of recombination of carriers via the indium centers. From fitting theoretical and experimental results, the carrier lifetime is found to be 2"5 x 10-~ sec and the capture cross-section of neutral indium centers for electrons is determined to be 1.8 × 10 1~ cm 2.
COMPONENTS,
Recently developed instrumentation for control of v a c u u m deposited thin films. T. I. PUTNER, J.
AND
CIRCUITS AND MATERIALS
A n overview of today's thick-film technology. T. C. REISSlNG. Proc. I E E E 59, No. 10 (1971), p. 1448. How thick-film systems are used in all facets of today's electronic industry, starting with their initial application in the computer and defense industries, is described. As the state of the art grew, composition suppliers broadened their lines, developing new higher performance materials to meet changing and more sophisticated packaging requirements. The present technology offers advantages of simple processing, fast and inexpensive tooling systems, economy, quick turnaround time between need and prototype, using wider tolerance active devices, high reliability, and multilevel circuit capabilities. As a result, virtually all sectors of today's electrical and