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Electronic and geometric structure of Si(111)-(7×7) and Si(001) surfaces
A98 340
Surface Science 181 (1987) 340-345 North-Holland, Amsterdam
S T M OBSERVATION OF A NEW RECONSTRUCTION O N NARROW S i ( l l l ) TERRACES Th. B E R G H A U S ,
A. B R O D D E ,
H. N E D D E R M E Y E R
a n d St. T O S C H
lnstitut )~(Ir Experimentalphysik der Ruhr-Universitiit, D-4630 Bochurn, Fed. Rep. of Germar(v Received 14 July 1986; accepted for publication 15 September 1986 By non-uniform heating of an initially fiat and clean Si(111) sample we have prepared a stepped Si surface with terraces of a width of less than the size of the Si(111)7 x 7 unit cell, An STM topographical image of the terraces shows the development of a ~3 x f3-R30 ° reconstruction, which can be explained by saturating dangling-bonds of the ideal Si(111) surface by Si adatoms.
346
Surface Science 181 (1987) 346-355 North-Holland, Amsterdam
ELECTRONIC AND GEOMETRIC STRUCTURE OF S i ( l l l ) - ( 7 × 7) AND Si(001) SURFACES R.J. H A M E R S ,
R.M. TROMP
a n d J.E. D E M U T H
I B M T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, N Y 10598. USA Received 15 July 1986; accepted for publication 30 July 1986 The atomic origins of the intrinsic surface states of the Si(111)-(7 × 7) and Si(001) surfaces have been identified using the recently developed method of current imaging tunneling spectroscopy (CITS). On Si(111)-(7×7) three filled and two empty surface states are found and directly identified with atomic features of the dimer-adatom-stacking fault model. On Si(001) one filled and one empty state are observed and identified with atomic features of a dimer model. The STM images of Si(001) are shown to be dominated by the surface electronic structure rather than geometric structure.
356
Surface Science 181 (1987) 356 361 North-Holland, Amsterdam
PHOTOCONDUCTIVE SCANNING TUNNELING ON SEMI-INSULATING
MICROSCOPY
GaAs
G . F . A . V A N D E W A L L E , H. V A N K E M P E N ,
P. W Y D E R
*
Research Institute for Materials', Universi(v of Nijmegen, Toernooiveld. 6525 ED Nijmegen, The Netherlands and
Surface Science 181 (1987) 340-345 North-Holland, Amsterdam
S T M OBSERVATION OF A NEW RECONSTRUCTION O N NARROW S i ( l l l ) TERRACES Th. B E R G H A U S ,
A. B R O D D E ,
H. N E D D E R M E Y E R
a n d St. T O S C H
lnstitut )~(Ir Experimentalphysik der Ruhr-Universitiit, D-4630 Bochurn, Fed. Rep. of Germar(v Received 14 July 1986; accepted for publication 15 September 1986 By non-uniform heating of an initially fiat and clean Si(111) sample we have prepared a stepped Si surface with terraces of a width of less than the size of the Si(111)7 x 7 unit cell, An STM topographical image of the terraces shows the development of a ~3 x f3-R30 ° reconstruction, which can be explained by saturating dangling-bonds of the ideal Si(111) surface by Si adatoms.
346
Surface Science 181 (1987) 346-355 North-Holland, Amsterdam
ELECTRONIC AND GEOMETRIC STRUCTURE OF S i ( l l l ) - ( 7 × 7) AND Si(001) SURFACES R.J. H A M E R S ,
R.M. TROMP
a n d J.E. D E M U T H
I B M T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, N Y 10598. USA Received 15 July 1986; accepted for publication 30 July 1986 The atomic origins of the intrinsic surface states of the Si(111)-(7 × 7) and Si(001) surfaces have been identified using the recently developed method of current imaging tunneling spectroscopy (CITS). On Si(111)-(7×7) three filled and two empty surface states are found and directly identified with atomic features of the dimer-adatom-stacking fault model. On Si(001) one filled and one empty state are observed and identified with atomic features of a dimer model. The STM images of Si(001) are shown to be dominated by the surface electronic structure rather than geometric structure.
356
Surface Science 181 (1987) 356 361 North-Holland, Amsterdam
PHOTOCONDUCTIVE SCANNING TUNNELING ON SEMI-INSULATING
MICROSCOPY
GaAs
G . F . A . V A N D E W A L L E , H. V A N K E M P E N ,
P. W Y D E R
*
Research Institute for Materials', Universi(v of Nijmegen, Toernooiveld. 6525 ED Nijmegen, The Netherlands and