EPINEAT: Field-proven for III-V production

EPINEAT: Field-proven for III-V production

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Postcard from Bratislava M o h a m e d Henini As readers will recall, Dr Henini regularly sends us reports on his travels to III-V R&D centres around the world. Last year, he was invited to tour the labs of China, this year Dr Henini's tours began with a triple visit to the USA closely followed by his first visit to part of the formerCzechoslovakia and then to Grenoble in France. I

n this first installment of my travel reports I will give my impressions of the work underway in one of the most interesting areas of Eastern Europe and review the Second Workshop on MBE which was held in Bratislava, Slovakia on 34 May, 1994. Then I will provide a short overview of the activities currently underway at the High Magnetic Field L a b o r a t o r y in G r e n o b l e , France. Upon landing of the aircraft my fellow flight passengers burst into spontaneous applause presumably in anticipation of the good time they were going to have in the beautiiful city of Vienna. Dr M. Hopkinson and I were met by Dr R. Redhommer of Department of Microelectronics, Bratislava at Schwechat airport (Vienna). From there it was a 30-mile car ride across the border to Bratislava, capital of the newly-formed republic of Slovakia. For the time of year the weather was excellent making For a good start in what turned out to bc a very enjoyable and useful trip.

LDSD in E. Europe The rapid development of improved relationships between Eastern and Western Europe is affecting all walks of life and it is not surprising to find it reflected in the papers presented at this workshop. The interest in low dimensional structures and devices (LDSD) has led to the founding of several crystal growth labs in Eastern Europe including the Department of Microelectronics, Bratislava, Slovakia

The' 2rot Bratislara ,~IBE workshop &'h'galc,s.

which I was able to visit during the meeting. The principal aim of the workshop was to bring together academic scientists from Western and Eastern Europe interested in a broad range of aspects of MBE growth of mainly IlIV semiconductors, to learn of and discuss each others problems. The venue was the Slovak Technical University, Department of Microelectronics, Bratislava. The workshop was attended by 20 or so delegates from the UK, Germany, Austria, Switzerland. Holland, Hungary, Poland, and the Czech Republic. These numbers were supplemented by staff and students from

0961-1290,;9457.00 ('1994, Else,,icr Science Ltd.

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Slovakia, bringing the total to around 45. The meeting itself was divided into four sessions, comprising 18 lectures, covering epitaxial growth, R H E E D studies, properties of resonant tunnelling diodes, and device applications. The invited papers were given by speakers from Switzerland (Dr A. Rudra), Germany (Prof. P. Kordos, a n d Dr A. F o r s t e r ) , A u s t r i a (Dr. H.Sitter) the UK (Dr M. Hopkinson, Dr M. Fahy and myself).The invited speakers were chosen to fulfill three basic objectives: i. to provide state-of-the-art lectures in key scientific areas related to the study of LDSD ii. to gJvc help and advice on the

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Some invited speakers and the local organisers enjoying an excellent dinner at a restaurant on the border o f the Danube.

aspects of epitaxial growth techniques, and iii. to establish new contacts and collaborations. These introductory lectures to each session were complemented by an excellent range of contributed papers from Germany, Poland, Hungary, Czech Republic, and Slovakia which added detail to the topics considerqd. Most of the Eastern Europeans could speak fluent English and their lectures were full of information. The research activities at the Microelectronics Department were explained to us through lab visits. These include MBE and LPE growth, but not as yet MOVPE, interface and surface analysis using techniques such as AES, XPS, and RHEED, heterostructures for highspeed optoelectronic devices, optical and electrical characterization, and modelling of growth modes. Much of this equipment was of local origin but the labs were steadily re-equipping from the usual western suppliers. Similarly, for substrates (GaAs and InP) and other starting materials local suppliers were being used but increasing amounts of these were coming from outside the republic. Like other labs I have visited, the Microelectronics Department is able to design, grow, process and package a wide range of electronic and optoelectronic devices in small quantities and has exchanged these with other labs around the world.

Financial constraints were obvious in all of the labs visited; a typical situation for scientists in Slovakia and in Eastern Europe in general. We all felt that our colleagues in Slovakia might benefit from some extra EC funding especially during this difficult transition period. I feel that our discussions of research ideas and directions with the different groups may have been very valuable to them. The possible collaborations that might result are likely to be both exciting and mutually rewarding.

~tohamed Hentni visiting Vienna which is one enjoyable hour boat trip on the Danube from Bratislava.

P'0e'lIImlVo'N°4

The organizers of the workshop, Dr R. Redhammer and Dr M. Vesely and their team had done a marvellous job in looking after the participants. The whole event ran very smoothly and the hospitality was superb. This extended to a tour of Bratislava and other historical sites away from the capital, and excellent meals in various restaurants where we were encouraged to try the local specialities and beers! Indeed we found the hospitality and friendliness of our Slovakian hosts hard to match; I would like to thank our hosts and hope to see them again very soon. Overall, the meeting proved to be a very valuable two days. The next meeting is tentatively timetabled for two years time and should be of interest to semiconductor researchers from both Eastern and Western Europe. All too soon, we were driven back across the border to Vienna Airport. Upon our return to Gatwick, for the second time on this interesting trip, our landing was marked with spontaneous applause but this time I was ready for it! For further information on the workshop or activities described in this article please contact Dr R. Redhammer at the Slovak Technical University, Department of Microelectronics, Bratislava, Slovakia. Tel: [1] 42 7 351654. Fax: [1] 42 7 723480. Email: RREDHAM @ ELF.STUBA.CS. This feature will conclude in the next issue with a USA visit report from the Naval and Army Research Laboratories and Georgia Institute of Technology and the School of Electrical and Computer Engineering at Georgia Institute of Technology (GIT), Atlanta.

In our recent article (TFR Vol. 7 No. 2 ) we omitted a supplier of IR lasers grown by MBE. We would like to bring readers attention to the availability of these devices from Mutek Infrared Lasers Systems, the contact and address is as follows: Dr Mike Hodges, Mutek Infrared Lasers Systems, Postfach 1318, D-82209 Herrsching, Germany.