Equipments & materials processing

News

Update!

ATMI appointments Epi l b u n d r y ATMI lnc

l i x c c u t i v e Scientist w i t h ASM

(I)anhury. (]N. 1 :SA) has

Anlcric;t):

,Ippointcd:

• l)r Robert Pitts,,ts Ill-\

• J;inlcs Htlang as vp ATMI

Product iManagL-r( f o r m e r l y

Epitaxial Services tbr Asia,

SCllior Prilicip;ll Staff

responsible for b u s i n e s s dcvcl

lhlgincc'r - III-V Tcchi+lologics.

o p m c n t , market ing, and selling

Managt'r Atlv;tnccd Maicri,llS

(lormcrly MEM(/s Sales

w i t h M o l o r o l , i ).

• l)r Stexe Rickborn as Director

of Applications I!nginccring

(;EO Specialty (;hemicals lnc (( :lcvcland. Ott. I:SA) plans to s p e n d I lS$4Om building the

Director tkn" SOtlth(+ast Asia and "lhiwan);

GEO to quadruple gallium capacity

I'iits ioins ATMI just as it

largest cvcr gallium metal

I)t+gins initi,iI q u a l i f i c ; i l i o n (if

extraction facility.With a capac-

tools at its n e w lll-V fiicilit.x in

it)" of up to 100m t o n s / y r (neat'-

Phocnix.AZ+ 1 'SA. xx hich will

l)' q u a d r u p l e (;FX)s capacity to

ultimately house I t) dedicated

ovcr

iools. ATMI has ah'ead)' d e m o n

sourc'c its l{'eclstock f1+o111Alco;I

• l)r l)Otlg Mc)c-r as l ) i r c c t o r o f

sti'alcd Iliantll, lcttlrt' o f hl(;aP-

ofAusirali:l l.td's nearbx

Prod(let Markc'tillg (fol+nlt'rly ;111

hitscd ttBTs.

(fin'mcrl) Chief Scientist at ~+~acker Sfltronic (]orp);

133m tons/yr), (lEO will

Pinjarra alumina plant.\Vcstcrn Australia and be on-struanl in Q2/2OO2. T h e plant ~ill u s e (;EO's

EPl-PROOF-grade liquid group V precursor qualified with AIXTRON

palcnted process technology (currently p r a c l i c c d ;it its site in Static. ( ; c r m a n y ) to p r o d u c e

iN (99.99%) g,lllium mct.'ll. w h i c h (,EO will t h e n purify to 6 N , - N a n d MBE grades.

M()CHF+M's h i g h - v o l u m e and

M()(;ItEM, t h e I 'nivcrsih of

p u r i i ) M () gn mp-V-prccurs{ n's

M;u'burg and the Applicalio11

(such ;is TP,A and TBP) h;ivc

l+aboratorv oI'AIX'I'I;',()N xvcrc

bccn qualified ,rod released in El'I-PRO(iF grade for

n e c e s s a r y l o aclaicvc a reliable chcmic:d product...fin" the

AIXTR()N's M ( ) C V I ) Planetary

high-efficiency production-

b~,cac't(Irs (fi)r Use with spcciall}

adapted, conlpatiblc h;trdv
u p t i n w and beneficial lox~,-tClllp e n l t u r e g r o w t h steps have been developed.

s c a l e l~lanct;llX Re;iCtOl", stated

MO(;I IEM's p r e s i d e n t I)r A

Grciling. l{nhanced safety and positive clwironmciltal cfli:cts (in line with i m p r o v e d dexicc pcrltlrnl,lllCC) have led to the

"'(;El) is c o m m i t t e d to aggrcssixcly e x p a n d its capacity to extract and purify gallium metal," said (iEO Spccialt+x Chemicals" CEO George Ahcarn."g'i: arc responding to t h e explosive d e m a n d lot gallium in today's high-technoh)gx wireless and LEI) products. O u r n e w filcilit.x will h d p stabilisc the worMwidc supply and d e m a n d for gallium."

increased '¢olunw of inst,tlhl-

(;IR) is c u r r c n d y the worM's

"Initial research f u n d i n g of the

liolls of Planetary Reactors

largest e x m l c t o r of virgin galli-

( ; c n n a n Ministry of Science

opera(in e, with

u m mct:ll.

and ]~-chnology in c;u'k 1993

TIIA/rt/P,

and oil-going re'so'arch cffi)rts at

1 :SA and Asia.

I{l)l-lq/()()F -

pal'ticularly in the

Airtron to make SiC substrates

"1;2

III-Vs R E V I E W

l+itton Airtron has p r o m o t e d Jeff I,Iobcrts to M,u3ufitcluring Man;t gcr ( responsible lor (;;tAs). I lc will report to Rich Mount (the I1CV, (;oiler;l[ Mallagcf of Airtron's Electronic M'lterials Group).

s e v e n t h biggest), Airtron is

limited supply of I SR w,flt+rs.

e x t e n d i n g its s e m i c o n d u c t o r

Air(ton says it is c o m m i t t e d to

matcrials b u s i n e s s by cst,iblish-

b e c o n l i n g t h e world's largest

ing ,l SiC wat~:r nlanufitcturirlg

s u p p l i e r of high-quality SiC ,+rod

largest l'S militarx c o n t n t c t o r )

5"5 m m and ~()nml di,'uncter

to buy Litton hlduslrics (the

will bc o / / c r c d , t o g e t h e r with a

Also, since last l ) c c e m b c r s

lktcility ( t h r o u g h licensing

o t h e r wide-I~;mdga 1) p r o d u c t s

ag1"CelllCllt [k)r N o r t h r o p

N o r t h r u p ' s SiC technology).

(alreac b' offering (;aN-based HEMT

G v u m m a n Corp (the fifH1-

Both 6tt and 4H pol) typcs of

epiwafers and El,() substrates).

VOL 14 - NO 3 " A p r i l 2 o o l