Erratum to “New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications”

ARTICLE IN PRESS

Nuclear Instruments and Methods in Physics Research A 513 (2003) 651

Erratum

Erratum to ‘‘New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications’’ [Nucl. Instr. and Meth. A 504 (2003) 24–37]$, $$ O. Limousin* CEA/DSM/DAPNIA Service d’ Astrophysique, CEA/Saclay, Gif-sur-Yvette Cedex 91191, France Received 17 July 2003

The publisher regrets some misprints in Table 2 of the above article. The correct Table 2 should read as follows:

Table 2 Typical values for charge transport properties and resistivity of CdTe and CdZnTe. m is the mobility and t the charge carrier lifetime. r is the apparent resistivity Semi-conductor

ðmtÞElectrons ðcm2 V1 Þ

ðmtÞHoles ðcm2 V1 Þ

Resistivity r ðO cmÞ

CdTe CdZnTe

Bð122Þ  10 Bð0:525Þ  103

B1  10 B1  105

B1  109 Bð125Þ  1010

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PII of original article S0168-9002(03)00745-9 Doi of the original article: 10.1016/S0168-9002(03)00745-9 *Tel.: +33-1-69-08-62-94; fax: +33-1-69-08-65-77. E-mail address: [email protected] (O. Limousin).

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0168-9002/$ - see front matter r 2003 Elsevier B.V. All rights reserved. doi:10.1016/S0168-9002(03)02119-3

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