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Erratum to “Synchrotron topography of high temperature–pressure treated silicon implanted with helium” [Nucl. Instr. and Meth. B 200 (2003) 358–362]
Nuclear Instruments and Methods in Physics Research B 207 (2003) 233–234 www.elsevier.com/locate/nimb
Erratum
Erratum to ‘‘Synchrotron topography of high temperature– pressure treated silicon implanted with helium’’ [Nucl. Instr. and Meth. B 200 (2003) 358–362] q a,*
A. Misiuk
, W. Wierzchowski b, K. Wieteska c, L. Bryja d, W. Graeff
e
a Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland c Institute of Atomic Energy, 05-400 Otwock-Swierk, Poland d Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw, Poland e HASYLAB at DESY, Notkestrasse 85, D-22603 Hamburg, Germany
b
Unfortunately, Fig. 1 has been incorrectly printed. (The on-line version is okay.) Please find here the correct Fig. 1.
q
PII of original article S0168-583X(02)01701-9. Corresponding author. Tel.: +48-22-548-7792; fax: +48-22-847-0631. E-mail address: [email protected] (A. Misiuk).
*
0168-583X/03/$ - see front matter Ó 2003 Elsevier Science B.V. All rights reserved. doi:10.1016/S0168-583X(03)01207-2
234
A. Misiuk et al. / Nucl. Instr. and Meth. in Phys. Res. B 207 (2003) 233–234
Fig. 1. Synchrotron white beam Bragg-case projection (A, left) and section topographs (B, right) of Si:He (D ¼ 5 1016 cm2 , 150 keV): annealed at 720 K–105 Pa for 1 h, HT–HP treated at 720 K–1.1 GPa for 6 h and at 1270 K–1.2 GPa for 1 h. Image width equals to about 7 mm.
Erratum
Erratum to ‘‘Synchrotron topography of high temperature– pressure treated silicon implanted with helium’’ [Nucl. Instr. and Meth. B 200 (2003) 358–362] q a,*
A. Misiuk
, W. Wierzchowski b, K. Wieteska c, L. Bryja d, W. Graeff
e
a Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland c Institute of Atomic Energy, 05-400 Otwock-Swierk, Poland d Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw, Poland e HASYLAB at DESY, Notkestrasse 85, D-22603 Hamburg, Germany
b
Unfortunately, Fig. 1 has been incorrectly printed. (The on-line version is okay.) Please find here the correct Fig. 1.
q
PII of original article S0168-583X(02)01701-9. Corresponding author. Tel.: +48-22-548-7792; fax: +48-22-847-0631. E-mail address: [email protected] (A. Misiuk).
*
0168-583X/03/$ - see front matter Ó 2003 Elsevier Science B.V. All rights reserved. doi:10.1016/S0168-583X(03)01207-2
234
A. Misiuk et al. / Nucl. Instr. and Meth. in Phys. Res. B 207 (2003) 233–234
Fig. 1. Synchrotron white beam Bragg-case projection (A, left) and section topographs (B, right) of Si:He (D ¼ 5 1016 cm2 , 150 keV): annealed at 720 K–105 Pa for 1 h, HT–HP treated at 720 K–1.1 GPa for 6 h and at 1270 K–1.2 GPa for 1 h. Image width equals to about 7 mm.