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Evaporation and sputtering
Classd=ed abstracts 784-794 26. A U T O M A T I C EQUIPMENT
PROTECTIVE AND CONTROL
26 784. Direct-action regulators for regulation of vacuum and residual gas pressure. (USSR) Devaces for a u t o m a t i c regulatton of pressure a n d gas flow in lowpower v a c u u m e q m p m e n t s are described I I Rumyantsev, Automat and Test and Measur lnstrum, Sclent-tech Coil, No 6, 1973, 24 (m Russian). 27. L E A K D E T E C T O R S A N D L E A K D E T E C T I O N 27 785. Leak imitator for calibration of helium leak detectors at examination by the search gas method. (USSR) A leak amltator is described whtch enables one to check sensatwlty of h e h u m leak detectors at using the search gas m e t h o d T h e amatator contains a daffusion helium source a n d t h r o u g h a small hole h e h u m flows into a t m o s p h e r e T h e imitator represents a point source o f helium. I G Baryshnikova et al, Prtb Tekh Eksper, No 6, 1973, 128-129 (in
Russtan) 27 786. Calibrated leaks for high-vacuum and ultrahigh-vacuum systems. (Roumania) R e q u i r e m e n t s to cahbrated leaks used for checking sensatavaty o f leak detectors are discussed. C o n s t r u c u o n of a simple leak based on helium dlffusaon In q u a r t z m dependence on temperature as described G M Mariu, Stud St Cerc Fiz, 25 (I), 1973, 131-133 (m Roumaman) 28 H E A T I N G
EQUIPMENT
AND THERMOMETERS
28 787. Vertical tungsten furnace for temperatures up to 270OC. (Czechoslovak.a) Design o f a verucal v a c u u m furnace for temperatures up to 2 7 0 0 C is described T h e heating element as m a d e o f a 0 3 m m thack tungsten foil. The working pressure o f 10 -6 torr as maintained by a daffusaon pump A Brown et al, Czech J Phys, A23 (6), 1973, 161-613 (in Czech)
III. Vacuum applications 30 E V A P O R A T I O N A N D S P U T T E R I N G 30 788. A nonsymmetrical R F electrode. (Indm) This note describes the desagn of a water-cooled n o n s y m m e t r i c a l R F sputtering electrode suitable for a general purpose v a c u u m coatm g unit. T h e reliable b o n d i n g t e c h m q u e s o f the target to the electrode are also described Hot pressed targets have been bonded with c o n d u c t i n g epoxy resan, a n d smtered targets by an alloy soldering method. G C Dubey, JPhys E Sclent lnstrum, 7 (1), 1974, 19-20. 30 789. The investigation of conduction in anodic tantalum oxide films formed on sputtered tantalum. (GB) Current-voltage m e a s u r e m e n t s have been carraed out at r o o m temperature on anodized t a n t a l u m than films ranging m thackness from 120 to 400 n m T h e t a n t a l u m was prepared by getter sputtering in such a way as to reduce the posstbdaty of tmpurities a n d defects being present as was f o u n d m t a n t a l u m foal The films were f o u n d to he rectifying, the forward direction o f current flow being wtth the a l u m m t u m counter-electrode posatwe with respect to the base t a n t a l u m T h e c o n d u c t i o n m e c h a n i s m as beheved to be space-chargehmtted in the forward direction a n d Schottky-controlled emission m the reverse direction T h e current m the forward directaon was on average two orders o f m a g n i t u d e higher than that in the reverse direction, and the m o b d i t y o f the electrons m the space-chargelamated mode, as obtained from steady-state a n d transaent measurements, as very low, being o f the order of 10 - 1 7 m 2 V - t s - 1 . T h e results in general support those o f Aris a n d Lewm (1973) a n d show that Iocahzed conductaon does not play an amportant part in the c o n d u c t i o n process M W Jones and D M Hughes, J Phys D Appl Phys, 7 ( I ), 1974, 112119.
280
30 790. Crystallization of amorphous selenium films. I. Morphology and kinetics. (USA) We report a study of the m o r p h o l o g y a n d kinetics of crystalhzatlon o f films o f a-Se vapour deposited on mica substrates Morphological examlnataon was facdltated by the complete dassolutton o f the a m o r p h o u s c o m p o n e n t o f the films by CS2, while the crystalline c o m p o n e n t was left essentmlly intact. Crystalhzataon begins (m the temperature range 30-100~C) wtth the f o r m a t i o n a n d radial growth o f crystalline aggregates, with a cyhndate (two-dimensional analogue o f spheruhte) morphology, at the mtca-film anterface F d a m e n t a r y crystals stem from the less regular regions o f these cyhndrites a n d grow upwards t h r o u g h the film. U p o n reaching the vicinity o f the free surface, s o m e of the filamentary tips develop into c y h n d n t e s which grow in a n d parallel wath the free-surface plane. The interface cyhndrltes were a b o u t 500 ,~ thick a n d their presence apparently is responsable for the p h e n o m e n o n o f "v=sual'" darkening often seen in a-Se films They are c o m p o s e d of small crystal d o m a i n s each oriented so that the Se chain axes are paaallel wath the interface and perpendacular to the disc radius In the regular morphology, favoured by higher-temperature crystalhzauon, the d o m a i n s are stacked into lamellae whach extend radmlly from the tuner regaons to the outer edge o f the cylindrates. These lamellae are interconnected by less regularly oriented d o m a i n s a n d are m u c h thicker a n d less regular in cross section than the crystals formed by linear polymers The radial growth rates o f the regular anterface cylmdrltes m films of the highest purity were c o n s t a n t in tame a n d quite reproducable at a gwen temperature They are a m o n g the h=ghest rates reported for a-Se a n d a b o u t two orders o f m a g n i t u d e higher than the corresponding rates for free-surface cyhndrates Their temperature dependence is described by u = 6 >~ 10 t5 e x p [ ( - 3 2 7 kcal/mole)/RT]cm/s K S K i m and D Tnrnhull, J Appl Phys, 44 (12), 1973, 5237-5244 30 791. Annealing kinetics of sputtered gold-tungsten and goldmolybdenum films. (USA) T h e annealing klnetacs of sputtered A u - W a n d A u - M o films have been investigated as a functaon of temperature up to 500~C T h e electrical reslst,vlty o f the gold layer after deposition was measured to be 1 25 times the bulk reslstivaty. T h e excess resast~vity was attributed to structural defects such as vacancies, mterstmals, twins, daslocauons, a n d impuntaes whach were q u e n c h e d in during depo31taon Parttcle s=ze changes m A u - W a n d A u - M o occur m two stages, wath an acuvataon energy for gold of 0 4 eV below 2 0 f f C a n d 0 7 eV above 200°C The activataon energy for the refractory layer particle growth was I 8 eV up to 500 C T h e kmetacs of dlslocauon (A~) annealing at 500~C was determined to follow an equation of the form Q(Nd) - --A(Nd) m, wath m -- 3 A n n e a l i n g the films up to 500 C resulted m a decrease of internal stress in gold from 2 5 109 d y n / c m ' . T h e observed results are discussed m terms o f mlcrostructural changes a n d the dependence o f anternal stress on film thackness. A Christou and H M Day, J Appl Phy~, 44 (12), 1973, 5259-5265 30 792. Thermoelectric power of thin copper films. (USA) T h e thermoelectric power a n d resistwaty o f annealed copper films have been measured F r o m the thermoelectric power values at the m i n i m u m m reslstavlty a n d the corresponding temperature coefficient o f resistance, the calculated values o f the energy dependence of the m e a n free path o f conductaon electrons a n d the Ferma surface area are 0 21 and - 1.43, respectively W F Leonard and Ho-Yuan Yu, J Appl Phys, 44 (12), 1973, 5320-5323. 30 793. Thermoelectric power of thin silver films. (USA) M e a s u r e m e n t s of thermoelectric power, resist~vaty, a n d the temperature coefficient o f resistance have been m a d e on annealed silver films The values obtained for the energy dependence of the m e a n free path o f c o n d u c t i o n electrons [(b In A/~ln W)]~=wr, a n d the Fermi surface area, [(~ In A/~ In W)]w=we, were 1 29 a n d --2 45, respecttvely Ho-Yuan Yu and W F Leonard, J Appl Phys, 44 (12), 1973, 5324-5327 30 794. Superconducting properties, electrical resistivities, and structure of NbN thin films. (USA) Superconducting properties a n d electrical reslstlvitles of N b N than films have been studied as a function o f sputtering parameters, film
Classified abstracts 795-806 structure, and composition. A good correlation exists between superconducting Tc's and film structure and composiuon regardless of the sputtering conditions used to achieve this structure. The most important parameters affecting Tc are lattice parameter, crystal structure, island structure, and ~mpurity content. Substrate temperature, Ar/N2 ratio, and impurity content are the principal sputtering parameters affecting film structure, and thus T, Y M Shy et al, d Appl Phys, 44 (12), 1973, 5539-5545. 30 795. High critical current densities found for thieh Nbi2Al3Ge superconducting deposits made by high-rate sputtering. (USA) Superconducting critical current densittes up to 5 2 × l0 s A/cm 2 at 75 kOe and 4.2°K, and up to 4.4 × 105 A/cm z at 100 kOe were measured for a 66-/~m-thlck Nb~2AI3Ge deposit made at a rate of 1 /zm/min by high-rate sputtering. Current-denstty-vs-transversemagnetic-field curves were either hnear or nearly linear, and the current density dropped only 33 % over the field range investigated (50-100 kOe). The sample that carried the highest current densmes was depostted at 20~C and heat treated one day at 750°C Current densities for another sample from the same deposit, but heat treated 20 days at 750~C, were about 14% lower than for the sample heat treated one day The deposits were body-centred-cubic (bcc) when deposited at 20~C Heat treatment at 750cC produced a single metastable A-I 5 phase containing grams of 350-A diameter; the small grain size presumably accounted for the high current density. Current dens=ties measured with the field perpendicular to the deposit plane were only about 14% lower than with the field parallel to the deposit plane, which indicated the A- 15 phase grains formed by heat treatment at 750~C were nearly equiaxed The high current density results and the availability of high-rate sputtering equipment encourage fabrication of practical quantities of sputter-deposited Nb-A1-Ge superconducting products. Estimated fabrication rates and costs were reasonable S D Dahlgren and D M Kroeger, J Appl Phys, 44 (12), 1973, 5595-5598 30 796. Energy spectrum of Na ÷ ions sputtered from NaCI crystals. (Japan) The energy spectrum of Na + ions sputtered from NaCI crystals under 20-keV He + ion bombardment IS measured in the energy range from 1 eV to 100 eV using a time-of-flight technique. The spectrum behaves hke that of neutral atoms sputtered from metals S Miyagawa, J .4ppl Phys, 44 (12), 1973, 5617-5618. 30 797. An investigation of the validity of ultrasonic pulse-saperpesition velocity measurements using thin-film transducers. (GB) Analysis of the phase shift of ultrasonic waves on reflection at a bonded transducer is extended to the case of thin-film piezoelectric transducers and is complemented by measurements. The certainty of determination of ultrasonic velocities by use of thin-film transducers is shown to be much greater than that attained by bonded-transducer techniques. A direct comparison IS drawn between sampled-continuous-wave resonances and pulse-superposition pseudoresonances in ultrasonic samples. To justify this comparison, measurements of ultrasonic transit times in GaAs single crystals have been made by both techniques, using thm-film CdS transducers. The validity of use of the pulse-superposltion technique to make accurate measurements of ultrasonic velocities is demonstrated. R I Cottam and G A Saunders, J Phys D" Appl Phys, 7 (2), 1974, 216-225. 30 798. The effect of sabstrate characteristics on the stress-reliefs of the Te-Ag and Te-Bi thin film depositions (Romanm) The stress reliefs of the depos~tlons of Te-Ag and Te-Bi on glass, mica, NaCI an plexiglas are studted at room temperature It is noted that the shape, size and orientation of unevenesses depend on the nature and state of the substrate surface as well as on the anistropy of Te films Popa-Milea and Oaneea-Gheorghita, Vzde, 28 (167), 1973, 207-208
(m French) 30 799. Electron diffraction investigation of single crystal Ag2S, Ag2Se films. (USSR) Using the method of electron diffraction m an electron microscope,
phase transformations and crystallite orientation in single crystal Ag2S and AgzSe films are investigated. The films have been prepared of syntbetized Ag2S and Ag2Se compounds and deposited on NaCI substrates kept at 200°C. I R Nuriev et al, lzv A N Az SSR Ser Ftz Tekh Mat Nauk, No 1, 1973, 52-55 (m Russian). 30 800. The influence of growth rate on some properties of SiOz films. (USSR) Using the methods of infrared spectroscopy and measurement of properties of metal-dielectric-semiconductorstructures, the influence of growth rate of SiO2 films, deposited by oxidation of tetraethoxysilane, on their physical properties is investigated. A S Virtamis et al, lzv An Latv SSR Ser Ftz Tekh Nauk, No 4, 1973, 8-13 (in Russtan). 30 801. The influence of thermal treatment and electron irradiation on structure of CaF2 and KCI thin films. (USSR) Using the method of rephca electron microscopy, structural changes in thin dielectric films of CaF2 and KCI due to electron irradtatlon and thermal treatment of substrate are investigated M V Pasbkovksiy et al, Phys Electron, Rep Interdtsctpl Scwnt-tech Coil, No 6, 1973, 91-94 (m Russian). 30 802. Optical methods of investigation of mierostructure of thin metallic films using an example of chromium film. (Poland) The results of investigation of microstructure and optical properties of thin chromium films are presented, The films have been prepared by evaporation in vacuum on substrates kept at room temperature. E Idczak, Pr Nauk lust FIz Tech Polytech Wrocl, No 7, 1973 3-88
(m Pohsh) 30 803. The influence of substrate temperature at vacuum condensation of gold films on KCI crystals. (USSR) Using the method of replica electron microscopy, the influence of substrate temperature on early stages of vacuum condensation of gold on KCI crystals is investigated. On cleaved KCI crystals along the (100) face and heated in vacuum at temperatures of 250 to 500°C for 15 to 150 minutes, gold films with thickness of 15 to 100 A. have been evaporated Film thickness was determmed by the method of multi-beam mterferometry. Carbon replicas were deposited on crystals with Au films. It is found that the surface obtained by cleaving in air and heated to high temperatures has a strongly pronounced mlcrorellef, caused by cleavage steps and figures of thermal etchmg predominating at temperatures above 450~C. Unusual formations with size up to l 5 tzm are observed at heating of gold condensates at 400°C for 30 minutes. The observed phenomena are explained. G B Dorzhin et al, Rep of9th Sctent ConfofEast-Stber Technol Inst, Sec Tech Scienc, Ulan-Ude 1973, 18-23 (m Rasstan). 30 804. Investigation of low temperature SiO2 films. (USSR) Volt-ampere characteristics of metal-dielectric-semiconductor structures with SiP2 films, prepared by oxidation of tetraethoxysdane at temperatures below 500~'C, are investigated A S Virtmanis et al, lzc A N Latv SSR Set Ftz Tekh Nauk, No 4, 1973, 3-7 (in Russian) 30 805 Kinetics of formation of defects in PbS films at neutron and gamma-Co 6° irradiation. (USSR) Kmetlcs of formation of defects in PbS films, prepared by vacuum evaporation and chemical deposition, at neutron and gamma-Co 6° Irradmtion is investigated A N Gonov and G A Lisovskiy, Trans of2nd Rep Confof Young Scient m Phys, No 2, Mmsk 1973, 70-80 (in Russtan). 3O 806. On mobility of holes in polycrystalline thin-film samples of solid solutions of the Bi-Te-Sb system. (USSR) The results are presented of a complex investigation of electro-physical properties of thing-film samples of BI-Te-Sb prepared by thermal evaporation m vacuum. It is found that the samples obtained at early stages of evaporation are highly doped by tellurium. Z M Dasbevskiy et al, Struct and Prop of Thermoelectr Mater, Coil, Moscow 1973, 17-23 (in Russian) 281
Classlfisd abstracts 807-818 30 807. The influence of stoichiometry on the structure of vacuum deposited CdSe films. (Germany) The influence of stotchlometry on the structure of CdSe films depostted on glass m vacuum 10Y5 torr at various substrate temperatures is investigated. Selemum was simultaneously evaporated from an addltlonal source The phase composttton of the films was determmed by X-ray analysis It is found that a selemum excess favours the formatIon of the hexagonal modlficatlon L Daweritz and M Dornics, P&s .%at So/(n), 20 (I), 1973, K37-K39. 30 808. Some optical properties of Au-Ni contacts on n-type GaP. (Germany) Opttcal properties of Au-N1 ohmrc contacts with thtckness of 0 25 pm and deposited by vacuum evaporation on n-type GaP surface are mvestlgated. It IS experimentally shown that a SIO, mterlayer, produced by thermal decomposmon of tetraethoxysllane, raises the contact reflectlvlty and enhances the external quantum efficiency of red electro-lummescent diodes. (Czechoslovakia) R Fremunt et al, P&s Stat Sol (a), 20 (I), 1973, K41-K43. 30 809. Structure and electric conductivity of size-quantized bismuth films. (Germany) Electric conductlvlty of bismuth films 100 to 1000 A thick was Investigated The films were obtamed by thermal evaporatton of pure bismuth at a pressure of resgdual gases of IO-’ torr on freshly cleaved mica substrates An expression IS derived for the electric conducttvny of the size-quanttzed bismuth films taking account of preferential scattermg of the current carriers by the boundaries of the crystalhtes of which the film consists (USSR) P G Borzyak et al, Phys Sfat Sol (a). 20 (I ), 1973, 359-365. 30
810. Inv~tigation of surface recombination of epitaxial GaAs films. (Germany) The spectral dependences of surface photo-voltage and of mtrmstc photo-conductivity are analyzed on monocrystallme vapour-phase epitaxlal n-GaAs films grown on semi-msulatmg GaAs (110) substrates. Both the natural surface and the surface exposed to chemical etching, doping with Cu++ Ions from aqueous solution and bombardment by Ar+ ions with about 1 keV energy were examined Experrmental proofs of minority carrier trappmg on the GaAs film surface are given (USSR) N L Dmitruk et al, Phys Stat Sol (a), 20 (I ), 1973, 53-62. 30 811. No-elf-mainlining electric discharge in vapours of metals and its
utilization forpre~~tionof
coatingsand condensates in vacuum. (USSR)
Posslbdlty of utlhzatlon of non-self-maintaining electric discharge in vapours of metals for preparation of coatmgs and condensates m vacuum IS consldered. An electron-beam plasma source has been developed and Its energy characteristics were studted Eflictency of evaporation at utdrzatlon of a discharge Increases by 6 to 8 times m comparison with the electron-beam heating Also properties and adhesion of the obtamed coatings are considerably improved due to high degree of lomzatlon of 30% and hrgh kinetic energy (I 6 eV) of deposmng atoms M Kh Shorshorov et al, Plasma Process ttt Metallurgy uttd Techttol of Inotq Muter, Colt. Ncmka Moscow 1973, 33-37 (in Russmt).
30 812. Thermodynamic aspects of deposition of vanadium oxides. (USSR) Possrbihty of preparation of VO, films is considered It IS found that at temperatures below IOWK m the system VOCIS-CO,-H, oxldes VO, V02, V,O, and VzOs are formed To Increase the VO,, content It IS recommended to use oxtdatlon atmosphere and temperatures above 1050’K. A S Ignatev et al, Coil Sciettt Rep on Probl of Microel, Moscow Insr of Elecfron Technoi, No 14, 1973, 219-223 (rtt Russrutz) 30 813. Investigation of the process of preparation of BizTeJ films with various charge carrier concentration. (USSR) Usmg the method of Rash evaporation of p-type &Te, m vacuum of lo-’ to IO-’ torr on mica and polyamide tape kept at 200 to 3WC, n-type Bi,Te, films with charge concentration ranging from I Y IO’Q to 5 I: lOI crne3 have been prepared Z M Dashevskiy et al, Structure and Prop of Therttzoel Mater, Coil, AJoscow 1973, 79-85 (tn Ru~mn). 282
30 814. Optical properties of thin bismuth films. (USSR) Usmg the sp~trophotometrlc method m the spectral range of 400 to 1000 nm and electron rrncroscope observations, optlcal properties and structure of thin bismuth films are investigated Greylsh-blue bismuth films have been prepared by thermal evaporation m vacuum of lO-5 torr on glass substrates kept at room temperature and by annealmg at IZO’C for I hour m the same vacuum conditions The yellow btsmuth films have been obtained on substrates kept at IZO~C during deposltlon. The effective Indexes of refraction and absorptton of thin bismuth films are calculated It IS found that the absorption index is by IO to 20 times lower m Island films than m contmuous films while the index of refraction differs only less than one order of magnitude in these films A I Usoskin et al, Optika Spektroskop, 34 (5), 1973, 954958 (m Rttssiatzf 30 815. Thin-film adsorption humidity sensor. (USSR) A capacitance sensor of arr humtdity IS described whfch is Intended for measurement and automatic control of air humidtty m the range of 30 to 100% Operation of the sensor is based on changes m capacity of the thm-film capacitor consisting of porous Al electrode and Al,03 dielectric The dielectric layer with thickness of I pm IS parepared by evaporatron of Al m an ambient of water vapour at partial pressure of I ~# IO- L torr and resrdual air at partial pressure of5 < IO-* torr The prous conducting top electrode wtth thickness of 2 to 3 pm IS prepared by evaporation of Al m residual air at pressure of5 - IO-* torr The electric resistance of the msulating layer, contaming 8% of free Al according to the chemical analysis, IS IO” ohms The effective dlelectrlc permlttlvlty of the msulatmg layer IS I 38 on frequency of 400 kHz as measured m vacuum 10s6 torr. V A Kotelnikov and Yu I Petrov, Prrb Tekh Ekyper, No 6, 1973, l82I84 (r/z Russ/m) 30 816. An apparatus for preparation and investigation of the processes
of thin film growth. (USSR) Design of an ultrahtgh vacuum apparatus for preparatton and mvesttgation of the processes of growth of thin films with complex chemical compositton IS described The examined thin films can be prepared by condensation in vacuum from molecular beams or vapour phase, or by depositlon from vapour phase at chemical reacttons Structure of growmg films IS mvestlgated by low-energy electron dlffraction, chemical cornposItion is determmed wtth the atd of Auger electron spectroscopy and charactensttc energy loss electron spectroscopy Composition of the vapour phase IS monitored by a mass spectrometer The apparatus has two chambers. one for deposition of films and one for Investigation of films The pressure difference between the two chambers may reach up to three orders of magnitude The ultimate pressure of I r 10e9 torr m the depositron chamber is maintained by getter-ion pumps and the pressure of I I 1O-‘c torr n-t the lnvestlgatlon chamber IS attamed wtth the ald of orbrtron and sublimation pumps. The results of mvesilgatton of’
GaAs thm films on (100) Ge are presented. N S Korolkov et al, Prib Tekh Eksper, No 6. 1973, I 1%I2 I (~1RUSJIU~I). 30 817. Relation between su~rco~ucting properties and structure of amorphous low temperature bismuth films. (USSR) The effect of annealing at various temperatures on crltlcal temperature of superconductlvity transItton IS studled m amorphous bismuth films prepared by condensatton from molecular beam in vacuum 5 % lo-* torr on substrates kept at liquid helium temperature B I Belevtsev et ai, Zh Eksper Teor fiz, 65 (6), 1973, 2455-2465 (M Russtnn)
30 818. Zones of adatom trapping in thin copper films on carbon. (USSR) Usrng electron microscope observations, the zones of trapping of copper atoms on surface of amorphous carbon are Investigated Copper was condensed In the electron mlcroscope wtth the rate of 0 1 to I A/s on carbon layer at 700 C Copper nucleation was mmated by gold crystallltes deposited on the opposite side of carbon layer C S Zhdanov, Frz Tce& Tela, 15 (12), 1973, 3692-3695 (rn Rurrrrm)
Class=f=ed abstracts 8 1 9 - 8 3 3
30 819. Secondary electron emission of polycrystulline tetracene films. (USSR) Secondary electron emmston of polycrystalline tetracene films is studied both experimentally and theoretically. The discrepancy between the theoretically predicted and experimentally observed energy width of true secondary electrons from tetracene is discussed. L Ya Bubnov et al, Fiz Tverd Tela, 15 (11), 1973, 3415-3417 (m
Russian). 30 820. Properties of superconducting alloy NbaAI prepared by evaporation in vacuum. (USSR) Nb3AI layers with high critical superconductivity parameters have been prepared by simultaneous evaporation of Nb and A1 in vacuum 2 "< 10 -5 torr on mobium foils 15/~m thick and kept at temperatures 700 to 800°C. The deposition rate was 70 to 100 A,/s. After evaporation a high temperature anneal at 1300 to 1400°C and low temperature anneal at 750°C for 10 to 20 minutes in vacuum 5 × 10 -6 torr were used. A I Golovashkin et al, Fiz Trerd Tela, 15 (11), 1973, 3448-3449 (in
Russian). 30 821. Creep and life of copper films with high tensile strength. (USSR) Creep and tensile strength of copper films with thickness of 25 :[- 5/zm are investigated. The films have been prepared m vacuum 5 × 10 -5 tort by evaporation of pure copper from a crucible on substrates heated to 110°C. It is found that deformation and degradation of the state of high tensile strength of films at low temperatures is controlled by diffusion processes. A I llinskiy et al, Fiz Tcerd Tela, 15 (11), 1973, 3196-3201 (in Russian). 30 822. Structure of silicon and germanium films on (110) tungsten face. (USSR) Using the method of low-energy electron diffraction in a sealed-off experimental glass dewce, structure of thin silicon and germanium films on (110) tungsten face is investigated Simultaneously the work function of these films was determined with the aid of measurement of contact potential difference The pressure during deposition of the films was less than 1 "< 10 -9 torr as measured by an ionization gauge A silicon plate heated by current passage was used as a source of silicon Germanium was evaporated from a tungsten boat. It is found that SI and Ge form on the examined face structures, in which the covalent character of bonding forces of adatoms with atoms of substrate and between adatoms is manifested. In the first monolayer the St and Ge films are obtained, in which the surface concentration is considerably higher than in the close packed (111) face of corresponding single crystals In the second and further layers the Si and Ge films are ordered. B A Boyko et al, Flz Tcerd Tela, 15 (11), 1973, 3145-3153 (in Russian). 30 823. X-ray graphical analysis of structure of films prepared by vacuum evaporation of some low-alloyed copper alloys. (USSR) X-ray dlffractiometrical phase analysis of structure of thin films of copper alloys, containing small additions of Mn, Pd, AI, Ti, Zr, Ce and Ni, has been performed The examined thin films have been prepared by thermal evaporation in vacuum. M V Belous et al, lzv VUZ Fiz, No 1 l, 1973, 101-105 (in Russian). 30 824. Structural peculiarities of bismuth films condensed on NaCI from vapour phase in vacuum. (USSR) Using the methods of electron microscopy and diffraction, structure of bismuth films at various stages of their formation is investigated Condensation of the examined bismuth films was performed on fresh (001) cleavages of NaCI single crystals by thermal evaporation in vacuum 5 × 10 -6 to 1 × 10 -5 torr. V N Vigdorovich et al, lzv VUZ Flz, No 11, 1973, 119-121 (in Russian). 30 825. On metal-dielectric-semiconductor structure of selenium diodes. (USSR) The influence of ionic processes on volt-ampere characteristics of selenium diodes is investigated The d~odes have been prepared by thermal evaporation of CdSe in vacuum Indium with aluminlum
coating was used as electrode. It is found that the selenium diodes biased in reverse direction are characterized by properties of metaldielectric-semiconductor structures. V A Dorina, Izc VUZ Fiz, No l 1, 1973, 7-1 l (in Russian). 3O 826. Sputtered amorphous germanium. (Czechoslovakia) Electrical, optical and other properties of sputtered amorphous germanium films are investigated m dependence on deposition rate, substrate temperature and doping The sputtering process was performed in carefully purified argon. S Koe et al, Czech J Phys, A23 (6), 1973, 597-608 (in Czech). 30 827. Investigation of tunnelling characteristics of sputtered superconducting NbaSn films. (USSR) Tunnel characteristics of sputtered superconducting NbaSn films w~th critical temperature of 17 8 to 18 3~K and thickness 0.3 to 20/~m are investigated S I Vedenneev et al, Zh Eksper Teor Flz, 63 (3), 1972, 1010-1019 (in
Russian). 30 828. Surface-barrier diodes based on IhSb. (USSR) Surface-barrier diodes have been prepared by evaporation of Au (Ag, Cu) on surface of InSb m vacuum l0 -5 torr. Volt-ampere characteristics of the surface-barrier d~odes are measured A S Volkov et al, Fiz Tekh Polup, 6 (12), 1972, 2370-2375 (in Russian). 30 829. Features of photoconductivity kinetics of arsenic selenide films in the visible and X-ray spectral regions. (USSR) Kinetics of longitudmal photoconducttvity ts investigated in amorphous arsemc selenide films with thickness of 0.5 to 15 tzm, prepared by thermal or electron-beam evaporation of starting material in vacuum on glass or berylhum substrates. B T Kolomiets et al, Fiz Tekh Polup, 6 (11), 1972, 2144-2149 (m
Russian) 30 830. On nature of shallow trapping levels in cadmium sulphide thin films. (USSR) Photoconductivlty relaxations are investigated in thin epitaxial films of CdS with clean surface in vacuum 10 -a torr and after oxygen adsorption and in pure mozaic CdS film. It is found that the trapping centres of adsorption orlgine change the shape of the photoconductivtty relaxation curve. T T Bykova and E F Lazneva, Flz Tekh Polup, 6 (9), 1972, 1818-1821
(m Russian) 30 831. Electric properties of crystals and films of BixSbl_xSel. (USSR) Temperature dependences of photo- and dark conductivity of polycrystals and thin films of BIxSbl_xSel solid solutions are investigated The thin films have been prepared by evaporauon from quartz ampoules in vacuum 5 × l0 -5 torr on mica, glass and ceramic substrates heated to 150°C. D P Belotskiy et ai, Neorg Mater, 9 (9), 1973, 1537-1541 (m Russian). 30
832. Investigation of super-molecular formations in evaporated Se films. (USSR) Using optical and electron microscopes, stages of formation of structure are investigated in evaporated Se films in dependence on the length of molecular chains in starting selemum and their influence on parameters of bulk and surface states The Se films with thickness of 3 to 4 #m have been prepared in vacuum l0 -6 torr at melt temperatures 270 to 370~C T M Verdieva and M A Talibi, Neorg Mater, 9 (9), 1973, 1486-1489
(m Russian). 30 833. Diffusion mass transfer at chemical transport reaction in conditions of the sandwich method. (USSR) Theoretical bases and calculation of the stationary diffusion regime of mass transfer at a chemical transport reaction in conditions of the sandwich method are presented This method ~s successfully used for preparation of epitaxlal films of GaP and solid solutions GaAsGaP. V N Maslov, Neorg Mater, 9 (9), 1973, 1473-1476 (in Russian) 283
Classffmd abstracts 834-849 30 834. Epitaxial growth of CdTe from elements in hydrogen flow. (USSR) Using the synthesis from elements in hydrogen flow, single crystal CdTe films have been prepared on various substrates. It is found that the ratio of partial pressures of Cd and Te vapours markedly influences the growth rate of films. A V Vanyukov et al, Neory Mater, 9 (9), 1973, 1497-1502 (m Russian). 30 835. Preparation of thin films of the Nb-AI2Os system. (USSR) Using the method of electron-beam evaporatmn of AI2Os and Nb from separate evaporators in vacuum 2 ,' l0 -7 to 1 x 10 -4 torr, thin films of AI203 containing 15 to 98~ / of niobium have been prepared. Elecmc properties of the films are investigated. K A Osipov et al, Neory Mater, 9 (9), 1973, 1503-1505 (in Russian) 30 836. Electroreflection of Scbottky barriers. (USSR) POsslbihty of utlhzatlon of Schottky barriers for investigation of electroreflectlon of surface region of semiconductor is considered. The experimental samples have been prepared by evaporation of semitransparent alumlmum or nickel film with thickness I00 to 200 A in vacuum 10 -4 torr on GaAs surface. The results of measurement of electroreflectlon m the spectral range 1 3 to 1.7 eV are presented B A Bobylev et al, Ftz Tekh Polup, 6 (9), 1972, 1754-1759 (in Russian) 30 837. Influence of laser excitation on photoelectric properties of ZnSeZnTe heterojunctions. (USSR) Photoelectric properties of ZnSe-ZnTe hereojunctlons are investigated at their excitation by ruby laser radmtion. The heterojunctlons have been formed by mozalc single crystals ZnSe films deposmted by vacuum evaporation on freshly cleaved (110) plane of ZnTe crystals L V Boehkareva et al, Ftz Tekh Polup, 6 (8), 1972, 1603-1604 (in
Russian) 30 838. Obtaining photographical images of surface of boundary of semiconductor with active gas medium. (USSR) Obtaining photographical images on surface of boundary of semiconductor with achve gas medium is described The method is based on gas photocorrosmn of thin polycrystalllne semlconductmg films of InSb with thickness of 0 5 to 1 5/~m in vapours of nitric acid The thin lnSb films have been evaporated on glass substrates. LG Paritskiy et al, Ftz Tekh Polup, 6 (7), 1972, 1400-1401 (in Russian) 30 839. The quantum size effect in thin CuI films with laminar structure. (USSR) Thickness dependence of optical density of Cu! thin films with laminar structure is measured. The films have been prepared by vacuum depositmn on amorphous substrates The measured dependences are explained by manifestation of the quantum size effect. L A Ageev ct al, Flz Tcerd Tela, 15 (9), 1973, 2794-2796 (in Russian) 3O 840. Electrostimulated inversion of photocondnctivity in heterojunction with colour centres. (USSR) Electrostimulated inversmn of photoconductiwty ms experimentally observed m heterojunctions based on CdO and NaCI films The NaCI films have been prepared by sublimation in vacuum 10 -6 torr on glass subtrates kept at 300°C. A E Glauberman et al, Fiz Trerd Tela, 14 (11) 1972, 3383-3386 (m
Russian). 30 841. Variations in mechanical stress in thin cadmium telluride films at photostimulated adsorption of oxygen. (USSR) Regularmes of varmtions in mechanical stress in CdTE films at adsorptmn and desorption of oxygen are investigated in darkness and dlummation in various spectral regions. Quasi-single crystal films of CdTe with thickness of 500 to 1000/~ have been prepared in vacuum 10 -8 torr on mica substrates heated to 150 to 220~C It is found that the effect of oxygen can be divided into reversible and irreversible changes connected with weakly and strongly bonded forms of adsorpuon The magnitude and sign of deformation depend on oxygen pressure m the system and on the wavelength of incident 284
light. The effect is supposed to be connected with changes in energy and charge states of lattice defects in CdTe films caused by adsorption and illumination. A I Vovsi and L P Strakbov, Fiz Tverd Tela, 14 (11 ), 1972, 3387-3390
(in Russian) 30 842. Phase transformations in thin gallium films obtained at lowtemperature condensation. (USSR) Temperatures of phase transformations in thin gallium films, obtained at condensation in vacuum 2 × 10 -7 tort on sapphire substrates kept at 5 to 7°K and 55~K, are investigated m dependence on film thickness B I Belevtsev and Yu F Komnik, Flz Trerd Tela, 14 (I 1), 1972, 324(L 3244 (In Russian) 30 843. Ferroelectric vacuum condensates of barium titanate thinner than 1000 A (USSR) Composition, structure and dielectric properties of barium titanate films with thickness of 100 to 5000 A, prepared by evaporatmn in vacuum on quartz substrates, are mvesugated Ferroelectrlc behaviour was observed at the films with thickness up to 230 A, An electrostatic model is presented for explanation of the thickness dependence on spontaneous polarization. Yu Ya Tomashpolskiy and M A Seveostyanov, Fiz Trerd Tela, 14 (9), 1972, 2686-2688 (m Russian) 30 844. Electrical resistivity and electron microscopical investigations of the mechanism of bismuth film growth. (USSR) Electric resistwity of thin bismuth films is measured during their growth at condensation in vacuum The results of measurement of thickness dependence of resistivity of BI films are compared with the observations of structure of BI films in an electron microscope V N Vigdorovich et al, Fiz Trerd Tela, 14 (9), 1972, 2744-2747 (in
Russian) 30 845. Optical phonons in amorphous films of arsenic chalcogenides. (USSR). Transmission infrared spectra of amorphous thin films of arsenic chalcogenides are investigated The thin films have been prepared by thermal evaporation in vacuum. V P Zakharov ct al, Ftz Tverd Tela, 14 (8), 1972, 2466-2468 (in
Russian). 30 846. Transformation amorphous phase--crystal in bismuth films with small thickness. (USSR) Thermal dependences of electrical resistivity of thin bismuth films, condensed in vacuum 1.5 • 10 -7 torr, is investigated It is found that in the regmn of phase transformatmn amorphous phasecrystal the electrical resistivity increases by 2 to 10 times in dependence on film thickness The thickness dependence of crystallization temperature is also studied. B I Belevtsev et al, Fiz Trerd Tela, 14 (7), 1972, 2177-2179 (m Russian) 30 847. Influence of plasma treatment on properties of low temperature SiP2 films. (USSR) Using the methods of infrared spectroscopy, the influence of treatment m high-frequency gas-discharge plasma on properties of $102 films, prepared by low temperature oxidation of tetraethoxysllane, =s investigated. L A Zhagata et al, lzc A N L a t v SSR Set Ftz Tekh Nauk, No 3, 1973, 18-24 (in Russian) 30 848. Investigation of morphology and growth mechanisms of crystals in antimony-selenium thin films. (USSR) Using the method of dlffractlon electron microscopy, the morphology and growth mechamsm of crystals in thin amorphous films of antimony-selenlum, prepared by evaporation of alloys in vacuum 10-5 torr on mica covered with carbon, are mvesugated I E Bolotov et al, Growth and Defects of Metalhc Crystals, Coil, Naak Durnka Kiev 1972, 104-107 (In Russian). 30 849. Maeroscopical pores in film structures metal-dielectric. (USSR) Porosity m the film system AI-SiO is investigated in dependence on film thickness, substrate temperature and condensation rate The
Classdied abstracts 850-864 obtained data indicate a diffusion-vacance mechanism of formation of through pores. G A Kurov et al, Mtkroelektromka, 2 (4), 1973, 344-350 (in Russian)
amorphous silicon were prepared by cathode sputtering in diode configuration with various deposition rates O Renner and J Zemek, Czech JPhys, B23 (11), 1973, 1273-1276.
30 850. An X-ray method for determination of orientation of thin single crystal films on substrate used for investigation of tantalum on sapphire. (Germany) An X-ray method was used for investigation of orientation of thin single crystal tantalum films with thickness of 1000 A evaporated on sapphire substrates kept at 1100 to 1150°C with the deposition rate of 60 A/min m vacuum of 10 -6 torr. S Meyer and H G Schneider, Krtst und Techn, 8 (1-3), 1973, 363-367
30 858. Determination of critical thickness of single crystal (001) nickel films. (USSR) Using the method of measurement of the magnetoresistance effects, crmcal thickness of single crystal (001) nickel films is determined, The films have been prepared by condensation in vacuum 10-5 torr on epltaxial LIF films deposited in vacuum on NaCI crystals V G Pynko et al, Fiz Tverd Tela, 15 (10), 1973, 3100 (m Russian). 30 859. Dissolution of silicon nitride films in phosphoric acid. (USSR) Regularities of dissolution of 813N4 films in HaPO4 are investigated. The sdtcon nitrlde films on Si plates have been synthetized of sllane and ammonia at 800°C to 1100°C at a total presure of I "." 10- t torr. V V Voskoboynnikov et al, Neorg Mater, 9 (10), 1973, 1831-1832 (m
(m German). 30 851. The processes of interaction of charged and neutral particles with solid surface at formation of thin films by methods of ion sputtering. (USSR) A physlco-mathemattcal model of the process of deposmon of thin films by cathodic sputtermg is presented. The model has been obtained on the basis of a statistical analysis of experimental data on the relations between external parameters of anomalous glow discharge and electro-physical properties of the films V P Belevskiy and Yu G Kononenko, Interacnon of Atomic Partwles in Sohds and on Sohd Surfaces, Coil, FAN Tashkent 1972, 105-113
(in Russian). 30 852. On change of charge of ions at their transmission through thin films. (USSR) The charge composition of Be, B, N and O ion at velooty of 8 × 108 cm/s and of N ion beam at velocity of 1.1 × 109 cm/s is investigated after their transmission through celluloid films with thickness from 0.8 to 10 #g/cm 2. I S Dmitriev et al, Interaction of Atomw Partwles in Sohds and on Sohd Surfaces, Coil, FAN Tashkent 1972, 114-118 (m Russian) 30 853. Preparation and physical properties of BiSeI thin films. (USSR) Thin BiSeI films have been prepared by the method of flash evaporauon of polycrystalline powder of starting material from a tantalum boat in vacuum 10 -4 torr on mica and glass substrates kept at temperatures ranging from 20 to 300cC. Using the X-ray methods, it ~s found that at evaporation on cold substrates and the evaporation rates below 30 A/see amorphous films are obtained. Electrical conductivity and optical properties of the prepared films are invest,gated. A P Zhdankin et al, Neor# Mater, 9 (11), 1973, 2057-2058 (in Russian). 30 854. Investigation of the order of sublattice substitution at formation of As2S3-As2Se3 films. (USSR) The results of investigation of infrared spectra and structure of shortrange order of thin amorphous films of As2Sa and As2Se3 and their mixtures are presented. The inves~tgated films have been prepared by thermal evaporation in vacuum 5 ~< 10 -6 torr. V P Zakharov et al, Neorg Mater, 9 (1 l), 1973, 1896-1899 (m Russian) 30 855. Electric conductivity and superconducting properties of thin mercury films. (USSR) Electric conductivity and superconducting properties of thin mercury films are investigated. The mercury films with thickness ranging from 0 to 1000 A have been prepared by evaporation in vacuum 10-8 torr on polished glass substrates kept at 2.3 to 4 2°K. V L Tsymbaleako and A I Shainikov, Zh Eksper Teor Ftz, 65 (5), 1973, 2086-2096 (in Russian). 30 856. Hysteresis in narrow superconducting bridges. (USSR) Volt-ampere characteristic of superconducting bridges are investigated. The bridges have been prepared by evaporation of Sn and lnSn through special masks on glass, quartz and sapphire substrates F Ya Nad and O Yu Polyanskiy, Radmtekh Elsktron, 18 (ll), 1973, 2445-2448 (m Russian). 3O 857. Density of amorphous silicon films. (Czechoslovakia) Density of as-deposited and annealed amorphous silicon films is measured using the method of total reflection of X-rays The films of
Russian). 30 860. Structure and some dielectric properties of strontium titauate thin films prepared by the method of cathode sputtering. (USSR) Using the method of X-ray analysis, structure of strontium titanate thin films IS invest=gated The strontium tltanate thin films have been prepared by cathode sputtering m air at pressure 6 × 10 - t torr Dielectric properties of the films are also studied. Dielectric strength as high as 500 kV/cm has been reached in the strontium tttanate films. N A Bulgakov et al, Neorg Mater, 9 (I 0), 1973, 1833-1834 (m Russian) 30 861. Electron-diffraction investigation of structure of the films of the system aluminium oxide-tungsten. (USSR) Using the method of transmission electron diffraction, phase composition and crystalline structure of AI2Oa films and of films of the system W-A1203 are investigated. The films have been prepared by thermal evaporation in vacuum 5 × l0 -6 torr and subsequent high temperature annealing. Alummium oxide m the thin films possesses two modifications: low-temperature (gamma) with a structure of defect spinel and high-temperature (alpha) with corundum structure. In the films of the system W-AlzOa no interaction between tungsten and alummlum oxide has been found K A Osipov et al, Neorg Mater, 9 (10), 1973, 1738-1740 (in Russian). 3O 862. The electrochemical method of investigation of reaction kinetics between aluminium and silicon monoxide films. (USSR) Using the electrochemical method, interaction between aluminium and silicon monoxide films is investigated. The samples have t:een prepared by subsequent condensation in vacuum 5 × 10 -6 torr of AI and SIO on dielectric substrates kept at 90 to 110°C. It ts shown that in the SiO-AI system the reaction kinetics is determined by diffusion of components. A E Gershinskiy et al, Neorg Mater, 9 (10), 1973, 1741-1743 (m
Russian). 30 863. Influence of composition of vapours on epitaxial growth of films in quasi-closed volume. (USSR) The influence of combined evaporation of CdTe ÷ Cd and CdTe + Te from two independent chambers in a quasi-closed volume on morphology and structure of epitaxial CdTe films is investigated It is found that the composition of gas phase strongly influences the morphology of epitaxtal CdTe films. In a quasi-closed volume at conditions near to equilibrium, the growth of CdTe films proceeds only in the stable cubic modIficauon and it does not depend on the deviauon of gas phase composmon from stolchlometry. Phase composition of epitaxial CdTe films is not determined by deviations of gas phase from stoichiometry, but it depends on thermodynamic condmons of film growth and nature and orientation of substrate Yu K Ezhovskly and I P Kalinkin, Neorg Mater, 9 (10), 1973, 16681672 (in Russian). 30 864. Electric and structural properties of low temperature bismuth films. (USSR) Temperature and thickness dependences of electrical resistance of low temperature bismuth films are mvesugated Structural properties of
285
PROTECTIVE AND CONTROL
26 784. Direct-action regulators for regulation of vacuum and residual gas pressure. (USSR) Devaces for a u t o m a t i c regulatton of pressure a n d gas flow in lowpower v a c u u m e q m p m e n t s are described I I Rumyantsev, Automat and Test and Measur lnstrum, Sclent-tech Coil, No 6, 1973, 24 (m Russian). 27. L E A K D E T E C T O R S A N D L E A K D E T E C T I O N 27 785. Leak imitator for calibration of helium leak detectors at examination by the search gas method. (USSR) A leak amltator is described whtch enables one to check sensatwlty of h e h u m leak detectors at using the search gas m e t h o d T h e amatator contains a daffusion helium source a n d t h r o u g h a small hole h e h u m flows into a t m o s p h e r e T h e imitator represents a point source o f helium. I G Baryshnikova et al, Prtb Tekh Eksper, No 6, 1973, 128-129 (in
Russtan) 27 786. Calibrated leaks for high-vacuum and ultrahigh-vacuum systems. (Roumania) R e q u i r e m e n t s to cahbrated leaks used for checking sensatavaty o f leak detectors are discussed. C o n s t r u c u o n of a simple leak based on helium dlffusaon In q u a r t z m dependence on temperature as described G M Mariu, Stud St Cerc Fiz, 25 (I), 1973, 131-133 (m Roumaman) 28 H E A T I N G
EQUIPMENT
AND THERMOMETERS
28 787. Vertical tungsten furnace for temperatures up to 270OC. (Czechoslovak.a) Design o f a verucal v a c u u m furnace for temperatures up to 2 7 0 0 C is described T h e heating element as m a d e o f a 0 3 m m thack tungsten foil. The working pressure o f 10 -6 torr as maintained by a daffusaon pump A Brown et al, Czech J Phys, A23 (6), 1973, 161-613 (in Czech)
III. Vacuum applications 30 E V A P O R A T I O N A N D S P U T T E R I N G 30 788. A nonsymmetrical R F electrode. (Indm) This note describes the desagn of a water-cooled n o n s y m m e t r i c a l R F sputtering electrode suitable for a general purpose v a c u u m coatm g unit. T h e reliable b o n d i n g t e c h m q u e s o f the target to the electrode are also described Hot pressed targets have been bonded with c o n d u c t i n g epoxy resan, a n d smtered targets by an alloy soldering method. G C Dubey, JPhys E Sclent lnstrum, 7 (1), 1974, 19-20. 30 789. The investigation of conduction in anodic tantalum oxide films formed on sputtered tantalum. (GB) Current-voltage m e a s u r e m e n t s have been carraed out at r o o m temperature on anodized t a n t a l u m than films ranging m thackness from 120 to 400 n m T h e t a n t a l u m was prepared by getter sputtering in such a way as to reduce the posstbdaty of tmpurities a n d defects being present as was f o u n d m t a n t a l u m foal The films were f o u n d to he rectifying, the forward direction o f current flow being wtth the a l u m m t u m counter-electrode posatwe with respect to the base t a n t a l u m T h e c o n d u c t i o n m e c h a n i s m as beheved to be space-chargehmtted in the forward direction a n d Schottky-controlled emission m the reverse direction T h e current m the forward directaon was on average two orders o f m a g n i t u d e higher than that in the reverse direction, and the m o b d i t y o f the electrons m the space-chargelamated mode, as obtained from steady-state a n d transaent measurements, as very low, being o f the order of 10 - 1 7 m 2 V - t s - 1 . T h e results in general support those o f Aris a n d Lewm (1973) a n d show that Iocahzed conductaon does not play an amportant part in the c o n d u c t i o n process M W Jones and D M Hughes, J Phys D Appl Phys, 7 ( I ), 1974, 112119.
280
30 790. Crystallization of amorphous selenium films. I. Morphology and kinetics. (USA) We report a study of the m o r p h o l o g y a n d kinetics of crystalhzatlon o f films o f a-Se vapour deposited on mica substrates Morphological examlnataon was facdltated by the complete dassolutton o f the a m o r p h o u s c o m p o n e n t o f the films by CS2, while the crystalline c o m p o n e n t was left essentmlly intact. Crystalhzataon begins (m the temperature range 30-100~C) wtth the f o r m a t i o n a n d radial growth o f crystalline aggregates, with a cyhndate (two-dimensional analogue o f spheruhte) morphology, at the mtca-film anterface F d a m e n t a r y crystals stem from the less regular regions o f these cyhndrites a n d grow upwards t h r o u g h the film. U p o n reaching the vicinity o f the free surface, s o m e of the filamentary tips develop into c y h n d n t e s which grow in a n d parallel wath the free-surface plane. The interface cyhndrltes were a b o u t 500 ,~ thick a n d their presence apparently is responsable for the p h e n o m e n o n o f "v=sual'" darkening often seen in a-Se films They are c o m p o s e d of small crystal d o m a i n s each oriented so that the Se chain axes are paaallel wath the interface and perpendacular to the disc radius In the regular morphology, favoured by higher-temperature crystalhzauon, the d o m a i n s are stacked into lamellae whach extend radmlly from the tuner regaons to the outer edge o f the cylindrates. These lamellae are interconnected by less regularly oriented d o m a i n s a n d are m u c h thicker a n d less regular in cross section than the crystals formed by linear polymers The radial growth rates o f the regular anterface cylmdrltes m films of the highest purity were c o n s t a n t in tame a n d quite reproducable at a gwen temperature They are a m o n g the h=ghest rates reported for a-Se a n d a b o u t two orders o f m a g n i t u d e higher than the corresponding rates for free-surface cyhndrates Their temperature dependence is described by u = 6 >~ 10 t5 e x p [ ( - 3 2 7 kcal/mole)/RT]cm/s K S K i m and D Tnrnhull, J Appl Phys, 44 (12), 1973, 5237-5244 30 791. Annealing kinetics of sputtered gold-tungsten and goldmolybdenum films. (USA) T h e annealing klnetacs of sputtered A u - W a n d A u - M o films have been investigated as a functaon of temperature up to 500~C T h e electrical reslst,vlty o f the gold layer after deposition was measured to be 1 25 times the bulk reslstivaty. T h e excess resast~vity was attributed to structural defects such as vacancies, mterstmals, twins, daslocauons, a n d impuntaes whach were q u e n c h e d in during depo31taon Parttcle s=ze changes m A u - W a n d A u - M o occur m two stages, wath an acuvataon energy for gold of 0 4 eV below 2 0 f f C a n d 0 7 eV above 200°C The activataon energy for the refractory layer particle growth was I 8 eV up to 500 C T h e kmetacs of dlslocauon (A~) annealing at 500~C was determined to follow an equation of the form Q(Nd) - --A(Nd) m, wath m -- 3 A n n e a l i n g the films up to 500 C resulted m a decrease of internal stress in gold from 2 5 109 d y n / c m ' . T h e observed results are discussed m terms o f mlcrostructural changes a n d the dependence o f anternal stress on film thackness. A Christou and H M Day, J Appl Phy~, 44 (12), 1973, 5259-5265 30 792. Thermoelectric power of thin copper films. (USA) T h e thermoelectric power a n d resistwaty o f annealed copper films have been measured F r o m the thermoelectric power values at the m i n i m u m m reslstavlty a n d the corresponding temperature coefficient o f resistance, the calculated values o f the energy dependence of the m e a n free path o f conductaon electrons a n d the Ferma surface area are 0 21 and - 1.43, respectively W F Leonard and Ho-Yuan Yu, J Appl Phys, 44 (12), 1973, 5320-5323. 30 793. Thermoelectric power of thin silver films. (USA) M e a s u r e m e n t s of thermoelectric power, resist~vaty, a n d the temperature coefficient o f resistance have been m a d e on annealed silver films The values obtained for the energy dependence of the m e a n free path o f c o n d u c t i o n electrons [(b In A/~ln W)]~=wr, a n d the Fermi surface area, [(~ In A/~ In W)]w=we, were 1 29 a n d --2 45, respecttvely Ho-Yuan Yu and W F Leonard, J Appl Phys, 44 (12), 1973, 5324-5327 30 794. Superconducting properties, electrical resistivities, and structure of NbN thin films. (USA) Superconducting properties a n d electrical reslstlvitles of N b N than films have been studied as a function o f sputtering parameters, film
Classified abstracts 795-806 structure, and composition. A good correlation exists between superconducting Tc's and film structure and composiuon regardless of the sputtering conditions used to achieve this structure. The most important parameters affecting Tc are lattice parameter, crystal structure, island structure, and ~mpurity content. Substrate temperature, Ar/N2 ratio, and impurity content are the principal sputtering parameters affecting film structure, and thus T, Y M Shy et al, d Appl Phys, 44 (12), 1973, 5539-5545. 30 795. High critical current densities found for thieh Nbi2Al3Ge superconducting deposits made by high-rate sputtering. (USA) Superconducting critical current densittes up to 5 2 × l0 s A/cm 2 at 75 kOe and 4.2°K, and up to 4.4 × 105 A/cm z at 100 kOe were measured for a 66-/~m-thlck Nb~2AI3Ge deposit made at a rate of 1 /zm/min by high-rate sputtering. Current-denstty-vs-transversemagnetic-field curves were either hnear or nearly linear, and the current density dropped only 33 % over the field range investigated (50-100 kOe). The sample that carried the highest current densmes was depostted at 20~C and heat treated one day at 750°C Current densities for another sample from the same deposit, but heat treated 20 days at 750~C, were about 14% lower than for the sample heat treated one day The deposits were body-centred-cubic (bcc) when deposited at 20~C Heat treatment at 750cC produced a single metastable A-I 5 phase containing grams of 350-A diameter; the small grain size presumably accounted for the high current density. Current dens=ties measured with the field perpendicular to the deposit plane were only about 14% lower than with the field parallel to the deposit plane, which indicated the A- 15 phase grains formed by heat treatment at 750~C were nearly equiaxed The high current density results and the availability of high-rate sputtering equipment encourage fabrication of practical quantities of sputter-deposited Nb-A1-Ge superconducting products. Estimated fabrication rates and costs were reasonable S D Dahlgren and D M Kroeger, J Appl Phys, 44 (12), 1973, 5595-5598 30 796. Energy spectrum of Na ÷ ions sputtered from NaCI crystals. (Japan) The energy spectrum of Na + ions sputtered from NaCI crystals under 20-keV He + ion bombardment IS measured in the energy range from 1 eV to 100 eV using a time-of-flight technique. The spectrum behaves hke that of neutral atoms sputtered from metals S Miyagawa, J .4ppl Phys, 44 (12), 1973, 5617-5618. 30 797. An investigation of the validity of ultrasonic pulse-saperpesition velocity measurements using thin-film transducers. (GB) Analysis of the phase shift of ultrasonic waves on reflection at a bonded transducer is extended to the case of thin-film piezoelectric transducers and is complemented by measurements. The certainty of determination of ultrasonic velocities by use of thin-film transducers is shown to be much greater than that attained by bonded-transducer techniques. A direct comparison IS drawn between sampled-continuous-wave resonances and pulse-superposition pseudoresonances in ultrasonic samples. To justify this comparison, measurements of ultrasonic transit times in GaAs single crystals have been made by both techniques, using thm-film CdS transducers. The validity of use of the pulse-superposltion technique to make accurate measurements of ultrasonic velocities is demonstrated. R I Cottam and G A Saunders, J Phys D" Appl Phys, 7 (2), 1974, 216-225. 30 798. The effect of sabstrate characteristics on the stress-reliefs of the Te-Ag and Te-Bi thin film depositions (Romanm) The stress reliefs of the depos~tlons of Te-Ag and Te-Bi on glass, mica, NaCI an plexiglas are studted at room temperature It is noted that the shape, size and orientation of unevenesses depend on the nature and state of the substrate surface as well as on the anistropy of Te films Popa-Milea and Oaneea-Gheorghita, Vzde, 28 (167), 1973, 207-208
(m French) 30 799. Electron diffraction investigation of single crystal Ag2S, Ag2Se films. (USSR) Using the method of electron diffraction m an electron microscope,
phase transformations and crystallite orientation in single crystal Ag2S and AgzSe films are investigated. The films have been prepared of syntbetized Ag2S and Ag2Se compounds and deposited on NaCI substrates kept at 200°C. I R Nuriev et al, lzv A N Az SSR Ser Ftz Tekh Mat Nauk, No 1, 1973, 52-55 (m Russian). 30 800. The influence of growth rate on some properties of SiOz films. (USSR) Using the methods of infrared spectroscopy and measurement of properties of metal-dielectric-semiconductorstructures, the influence of growth rate of SiO2 films, deposited by oxidation of tetraethoxysilane, on their physical properties is investigated. A S Virtamis et al, lzv An Latv SSR Ser Ftz Tekh Nauk, No 4, 1973, 8-13 (in Russtan). 30 801. The influence of thermal treatment and electron irradiation on structure of CaF2 and KCI thin films. (USSR) Using the method of rephca electron microscopy, structural changes in thin dielectric films of CaF2 and KCI due to electron irradtatlon and thermal treatment of substrate are investigated M V Pasbkovksiy et al, Phys Electron, Rep Interdtsctpl Scwnt-tech Coil, No 6, 1973, 91-94 (m Russian). 30 802. Optical methods of investigation of mierostructure of thin metallic films using an example of chromium film. (Poland) The results of investigation of microstructure and optical properties of thin chromium films are presented, The films have been prepared by evaporation in vacuum on substrates kept at room temperature. E Idczak, Pr Nauk lust FIz Tech Polytech Wrocl, No 7, 1973 3-88
(m Pohsh) 30 803. The influence of substrate temperature at vacuum condensation of gold films on KCI crystals. (USSR) Using the method of replica electron microscopy, the influence of substrate temperature on early stages of vacuum condensation of gold on KCI crystals is investigated. On cleaved KCI crystals along the (100) face and heated in vacuum at temperatures of 250 to 500°C for 15 to 150 minutes, gold films with thickness of 15 to 100 A. have been evaporated Film thickness was determmed by the method of multi-beam mterferometry. Carbon replicas were deposited on crystals with Au films. It is found that the surface obtained by cleaving in air and heated to high temperatures has a strongly pronounced mlcrorellef, caused by cleavage steps and figures of thermal etchmg predominating at temperatures above 450~C. Unusual formations with size up to l 5 tzm are observed at heating of gold condensates at 400°C for 30 minutes. The observed phenomena are explained. G B Dorzhin et al, Rep of9th Sctent ConfofEast-Stber Technol Inst, Sec Tech Scienc, Ulan-Ude 1973, 18-23 (m Rasstan). 30 804. Investigation of low temperature SiO2 films. (USSR) Volt-ampere characteristics of metal-dielectric-semiconductor structures with SiP2 films, prepared by oxidation of tetraethoxysdane at temperatures below 500~'C, are investigated A S Virtmanis et al, lzc A N Latv SSR Set Ftz Tekh Nauk, No 4, 1973, 3-7 (in Russian) 30 805 Kinetics of formation of defects in PbS films at neutron and gamma-Co 6° irradiation. (USSR) Kmetlcs of formation of defects in PbS films, prepared by vacuum evaporation and chemical deposition, at neutron and gamma-Co 6° Irradmtion is investigated A N Gonov and G A Lisovskiy, Trans of2nd Rep Confof Young Scient m Phys, No 2, Mmsk 1973, 70-80 (in Russtan). 3O 806. On mobility of holes in polycrystalline thin-film samples of solid solutions of the Bi-Te-Sb system. (USSR) The results are presented of a complex investigation of electro-physical properties of thing-film samples of BI-Te-Sb prepared by thermal evaporation m vacuum. It is found that the samples obtained at early stages of evaporation are highly doped by tellurium. Z M Dasbevskiy et al, Struct and Prop of Thermoelectr Mater, Coil, Moscow 1973, 17-23 (in Russian) 281
Classlfisd abstracts 807-818 30 807. The influence of stoichiometry on the structure of vacuum deposited CdSe films. (Germany) The influence of stotchlometry on the structure of CdSe films depostted on glass m vacuum 10Y5 torr at various substrate temperatures is investigated. Selemum was simultaneously evaporated from an addltlonal source The phase composttton of the films was determmed by X-ray analysis It is found that a selemum excess favours the formatIon of the hexagonal modlficatlon L Daweritz and M Dornics, P&s .%at So/(n), 20 (I), 1973, K37-K39. 30 808. Some optical properties of Au-Ni contacts on n-type GaP. (Germany) Opttcal properties of Au-N1 ohmrc contacts with thtckness of 0 25 pm and deposited by vacuum evaporation on n-type GaP surface are mvestlgated. It IS experimentally shown that a SIO, mterlayer, produced by thermal decomposmon of tetraethoxysllane, raises the contact reflectlvlty and enhances the external quantum efficiency of red electro-lummescent diodes. (Czechoslovakia) R Fremunt et al, P&s Stat Sol (a), 20 (I), 1973, K41-K43. 30 809. Structure and electric conductivity of size-quantized bismuth films. (Germany) Electric conductlvlty of bismuth films 100 to 1000 A thick was Investigated The films were obtamed by thermal evaporatton of pure bismuth at a pressure of resgdual gases of IO-’ torr on freshly cleaved mica substrates An expression IS derived for the electric conducttvny of the size-quanttzed bismuth films taking account of preferential scattermg of the current carriers by the boundaries of the crystalhtes of which the film consists (USSR) P G Borzyak et al, Phys Sfat Sol (a). 20 (I ), 1973, 359-365. 30
810. Inv~tigation of surface recombination of epitaxial GaAs films. (Germany) The spectral dependences of surface photo-voltage and of mtrmstc photo-conductivity are analyzed on monocrystallme vapour-phase epitaxlal n-GaAs films grown on semi-msulatmg GaAs (110) substrates. Both the natural surface and the surface exposed to chemical etching, doping with Cu++ Ions from aqueous solution and bombardment by Ar+ ions with about 1 keV energy were examined Experrmental proofs of minority carrier trappmg on the GaAs film surface are given (USSR) N L Dmitruk et al, Phys Stat Sol (a), 20 (I ), 1973, 53-62. 30 811. No-elf-mainlining electric discharge in vapours of metals and its
utilization forpre~~tionof
coatingsand condensates in vacuum. (USSR)
Posslbdlty of utlhzatlon of non-self-maintaining electric discharge in vapours of metals for preparation of coatmgs and condensates m vacuum IS consldered. An electron-beam plasma source has been developed and Its energy characteristics were studted Eflictency of evaporation at utdrzatlon of a discharge Increases by 6 to 8 times m comparison with the electron-beam heating Also properties and adhesion of the obtamed coatings are considerably improved due to high degree of lomzatlon of 30% and hrgh kinetic energy (I 6 eV) of deposmng atoms M Kh Shorshorov et al, Plasma Process ttt Metallurgy uttd Techttol of Inotq Muter, Colt. Ncmka Moscow 1973, 33-37 (in Russmt).
30 812. Thermodynamic aspects of deposition of vanadium oxides. (USSR) Possrbihty of preparation of VO, films is considered It IS found that at temperatures below IOWK m the system VOCIS-CO,-H, oxldes VO, V02, V,O, and VzOs are formed To Increase the VO,, content It IS recommended to use oxtdatlon atmosphere and temperatures above 1050’K. A S Ignatev et al, Coil Sciettt Rep on Probl of Microel, Moscow Insr of Elecfron Technoi, No 14, 1973, 219-223 (rtt Russrutz) 30 813. Investigation of the process of preparation of BizTeJ films with various charge carrier concentration. (USSR) Usmg the method of Rash evaporation of p-type &Te, m vacuum of lo-’ to IO-’ torr on mica and polyamide tape kept at 200 to 3WC, n-type Bi,Te, films with charge concentration ranging from I Y IO’Q to 5 I: lOI crne3 have been prepared Z M Dashevskiy et al, Structure and Prop of Therttzoel Mater, Coil, AJoscow 1973, 79-85 (tn Ru~mn). 282
30 814. Optical properties of thin bismuth films. (USSR) Usmg the sp~trophotometrlc method m the spectral range of 400 to 1000 nm and electron rrncroscope observations, optlcal properties and structure of thin bismuth films are investigated Greylsh-blue bismuth films have been prepared by thermal evaporation m vacuum of lO-5 torr on glass substrates kept at room temperature and by annealmg at IZO’C for I hour m the same vacuum conditions The yellow btsmuth films have been obtained on substrates kept at IZO~C during deposltlon. The effective Indexes of refraction and absorptton of thin bismuth films are calculated It IS found that the absorption index is by IO to 20 times lower m Island films than m contmuous films while the index of refraction differs only less than one order of magnitude in these films A I Usoskin et al, Optika Spektroskop, 34 (5), 1973, 954958 (m Rttssiatzf 30 815. Thin-film adsorption humidity sensor. (USSR) A capacitance sensor of arr humtdity IS described whfch is Intended for measurement and automatic control of air humidtty m the range of 30 to 100% Operation of the sensor is based on changes m capacity of the thm-film capacitor consisting of porous Al electrode and Al,03 dielectric The dielectric layer with thickness of I pm IS parepared by evaporatron of Al m an ambient of water vapour at partial pressure of I ~# IO- L torr and resrdual air at partial pressure of5 < IO-* torr The prous conducting top electrode wtth thickness of 2 to 3 pm IS prepared by evaporation of Al m residual air at pressure of5 - IO-* torr The electric resistance of the msulating layer, contaming 8% of free Al according to the chemical analysis, IS IO” ohms The effective dlelectrlc permlttlvlty of the msulatmg layer IS I 38 on frequency of 400 kHz as measured m vacuum 10s6 torr. V A Kotelnikov and Yu I Petrov, Prrb Tekh Ekyper, No 6, 1973, l82I84 (r/z Russ/m) 30 816. An apparatus for preparation and investigation of the processes
of thin film growth. (USSR) Design of an ultrahtgh vacuum apparatus for preparatton and mvesttgation of the processes of growth of thin films with complex chemical compositton IS described The examined thin films can be prepared by condensation in vacuum from molecular beams or vapour phase, or by depositlon from vapour phase at chemical reacttons Structure of growmg films IS mvestlgated by low-energy electron dlffraction, chemical cornposItion is determmed wtth the atd of Auger electron spectroscopy and charactensttc energy loss electron spectroscopy Composition of the vapour phase IS monitored by a mass spectrometer The apparatus has two chambers. one for deposition of films and one for Investigation of films The pressure difference between the two chambers may reach up to three orders of magnitude The ultimate pressure of I r 10e9 torr m the depositron chamber is maintained by getter-ion pumps and the pressure of I I 1O-‘c torr n-t the lnvestlgatlon chamber IS attamed wtth the ald of orbrtron and sublimation pumps. The results of mvesilgatton of’
GaAs thm films on (100) Ge are presented. N S Korolkov et al, Prib Tekh Eksper, No 6. 1973, I 1%I2 I (~1RUSJIU~I). 30 817. Relation between su~rco~ucting properties and structure of amorphous low temperature bismuth films. (USSR) The effect of annealing at various temperatures on crltlcal temperature of superconductlvity transItton IS studled m amorphous bismuth films prepared by condensatton from molecular beam in vacuum 5 % lo-* torr on substrates kept at liquid helium temperature B I Belevtsev et ai, Zh Eksper Teor fiz, 65 (6), 1973, 2455-2465 (M Russtnn)
30 818. Zones of adatom trapping in thin copper films on carbon. (USSR) Usrng electron microscope observations, the zones of trapping of copper atoms on surface of amorphous carbon are Investigated Copper was condensed In the electron mlcroscope wtth the rate of 0 1 to I A/s on carbon layer at 700 C Copper nucleation was mmated by gold crystallltes deposited on the opposite side of carbon layer C S Zhdanov, Frz Tce& Tela, 15 (12), 1973, 3692-3695 (rn Rurrrrm)
Class=f=ed abstracts 8 1 9 - 8 3 3
30 819. Secondary electron emission of polycrystulline tetracene films. (USSR) Secondary electron emmston of polycrystalline tetracene films is studied both experimentally and theoretically. The discrepancy between the theoretically predicted and experimentally observed energy width of true secondary electrons from tetracene is discussed. L Ya Bubnov et al, Fiz Tverd Tela, 15 (11), 1973, 3415-3417 (m
Russian). 30 820. Properties of superconducting alloy NbaAI prepared by evaporation in vacuum. (USSR) Nb3AI layers with high critical superconductivity parameters have been prepared by simultaneous evaporation of Nb and A1 in vacuum 2 "< 10 -5 torr on mobium foils 15/~m thick and kept at temperatures 700 to 800°C. The deposition rate was 70 to 100 A,/s. After evaporation a high temperature anneal at 1300 to 1400°C and low temperature anneal at 750°C for 10 to 20 minutes in vacuum 5 × 10 -6 torr were used. A I Golovashkin et al, Fiz Trerd Tela, 15 (11), 1973, 3448-3449 (in
Russian). 30 821. Creep and life of copper films with high tensile strength. (USSR) Creep and tensile strength of copper films with thickness of 25 :[- 5/zm are investigated. The films have been prepared m vacuum 5 × 10 -5 tort by evaporation of pure copper from a crucible on substrates heated to 110°C. It is found that deformation and degradation of the state of high tensile strength of films at low temperatures is controlled by diffusion processes. A I llinskiy et al, Fiz Tcerd Tela, 15 (11), 1973, 3196-3201 (in Russian). 30 822. Structure of silicon and germanium films on (110) tungsten face. (USSR) Using the method of low-energy electron diffraction in a sealed-off experimental glass dewce, structure of thin silicon and germanium films on (110) tungsten face is investigated Simultaneously the work function of these films was determined with the aid of measurement of contact potential difference The pressure during deposition of the films was less than 1 "< 10 -9 torr as measured by an ionization gauge A silicon plate heated by current passage was used as a source of silicon Germanium was evaporated from a tungsten boat. It is found that SI and Ge form on the examined face structures, in which the covalent character of bonding forces of adatoms with atoms of substrate and between adatoms is manifested. In the first monolayer the St and Ge films are obtained, in which the surface concentration is considerably higher than in the close packed (111) face of corresponding single crystals In the second and further layers the Si and Ge films are ordered. B A Boyko et al, Flz Tcerd Tela, 15 (11), 1973, 3145-3153 (in Russian). 30 823. X-ray graphical analysis of structure of films prepared by vacuum evaporation of some low-alloyed copper alloys. (USSR) X-ray dlffractiometrical phase analysis of structure of thin films of copper alloys, containing small additions of Mn, Pd, AI, Ti, Zr, Ce and Ni, has been performed The examined thin films have been prepared by thermal evaporation in vacuum. M V Belous et al, lzv VUZ Fiz, No 1 l, 1973, 101-105 (in Russian). 30 824. Structural peculiarities of bismuth films condensed on NaCI from vapour phase in vacuum. (USSR) Using the methods of electron microscopy and diffraction, structure of bismuth films at various stages of their formation is investigated Condensation of the examined bismuth films was performed on fresh (001) cleavages of NaCI single crystals by thermal evaporation in vacuum 5 × 10 -6 to 1 × 10 -5 torr. V N Vigdorovich et al, lzv VUZ Flz, No 11, 1973, 119-121 (in Russian). 30 825. On metal-dielectric-semiconductor structure of selenium diodes. (USSR) The influence of ionic processes on volt-ampere characteristics of selenium diodes is investigated The d~odes have been prepared by thermal evaporation of CdSe in vacuum Indium with aluminlum
coating was used as electrode. It is found that the selenium diodes biased in reverse direction are characterized by properties of metaldielectric-semiconductor structures. V A Dorina, Izc VUZ Fiz, No l 1, 1973, 7-1 l (in Russian). 3O 826. Sputtered amorphous germanium. (Czechoslovakia) Electrical, optical and other properties of sputtered amorphous germanium films are investigated m dependence on deposition rate, substrate temperature and doping The sputtering process was performed in carefully purified argon. S Koe et al, Czech J Phys, A23 (6), 1973, 597-608 (in Czech). 30 827. Investigation of tunnelling characteristics of sputtered superconducting NbaSn films. (USSR) Tunnel characteristics of sputtered superconducting NbaSn films w~th critical temperature of 17 8 to 18 3~K and thickness 0.3 to 20/~m are investigated S I Vedenneev et al, Zh Eksper Teor Flz, 63 (3), 1972, 1010-1019 (in
Russian). 30 828. Surface-barrier diodes based on IhSb. (USSR) Surface-barrier diodes have been prepared by evaporation of Au (Ag, Cu) on surface of InSb m vacuum l0 -5 torr. Volt-ampere characteristics of the surface-barrier d~odes are measured A S Volkov et al, Fiz Tekh Polup, 6 (12), 1972, 2370-2375 (in Russian). 30 829. Features of photoconductivity kinetics of arsenic selenide films in the visible and X-ray spectral regions. (USSR) Kinetics of longitudmal photoconducttvity ts investigated in amorphous arsemc selenide films with thickness of 0.5 to 15 tzm, prepared by thermal or electron-beam evaporation of starting material in vacuum on glass or berylhum substrates. B T Kolomiets et al, Fiz Tekh Polup, 6 (11), 1972, 2144-2149 (m
Russian) 30 830. On nature of shallow trapping levels in cadmium sulphide thin films. (USSR) Photoconductivlty relaxations are investigated in thin epitaxial films of CdS with clean surface in vacuum 10 -a torr and after oxygen adsorption and in pure mozaic CdS film. It is found that the trapping centres of adsorption orlgine change the shape of the photoconductivtty relaxation curve. T T Bykova and E F Lazneva, Flz Tekh Polup, 6 (9), 1972, 1818-1821
(m Russian) 30 831. Electric properties of crystals and films of BixSbl_xSel. (USSR) Temperature dependences of photo- and dark conductivity of polycrystals and thin films of BIxSbl_xSel solid solutions are investigated The thin films have been prepared by evaporauon from quartz ampoules in vacuum 5 × l0 -5 torr on mica, glass and ceramic substrates heated to 150°C. D P Belotskiy et ai, Neorg Mater, 9 (9), 1973, 1537-1541 (m Russian). 30
832. Investigation of super-molecular formations in evaporated Se films. (USSR) Using optical and electron microscopes, stages of formation of structure are investigated in evaporated Se films in dependence on the length of molecular chains in starting selemum and their influence on parameters of bulk and surface states The Se films with thickness of 3 to 4 #m have been prepared in vacuum l0 -6 torr at melt temperatures 270 to 370~C T M Verdieva and M A Talibi, Neorg Mater, 9 (9), 1973, 1486-1489
(m Russian). 30 833. Diffusion mass transfer at chemical transport reaction in conditions of the sandwich method. (USSR) Theoretical bases and calculation of the stationary diffusion regime of mass transfer at a chemical transport reaction in conditions of the sandwich method are presented This method ~s successfully used for preparation of epitaxlal films of GaP and solid solutions GaAsGaP. V N Maslov, Neorg Mater, 9 (9), 1973, 1473-1476 (in Russian) 283
Classffmd abstracts 834-849 30 834. Epitaxial growth of CdTe from elements in hydrogen flow. (USSR) Using the synthesis from elements in hydrogen flow, single crystal CdTe films have been prepared on various substrates. It is found that the ratio of partial pressures of Cd and Te vapours markedly influences the growth rate of films. A V Vanyukov et al, Neory Mater, 9 (9), 1973, 1497-1502 (m Russian). 30 835. Preparation of thin films of the Nb-AI2Os system. (USSR) Using the method of electron-beam evaporatmn of AI2Os and Nb from separate evaporators in vacuum 2 ,' l0 -7 to 1 x 10 -4 torr, thin films of AI203 containing 15 to 98~ / of niobium have been prepared. Elecmc properties of the films are investigated. K A Osipov et al, Neory Mater, 9 (9), 1973, 1503-1505 (in Russian) 30 836. Electroreflection of Scbottky barriers. (USSR) POsslbihty of utlhzatlon of Schottky barriers for investigation of electroreflectlon of surface region of semiconductor is considered. The experimental samples have been prepared by evaporation of semitransparent alumlmum or nickel film with thickness I00 to 200 A in vacuum 10 -4 torr on GaAs surface. The results of measurement of electroreflectlon m the spectral range 1 3 to 1.7 eV are presented B A Bobylev et al, Ftz Tekh Polup, 6 (9), 1972, 1754-1759 (in Russian) 30 837. Influence of laser excitation on photoelectric properties of ZnSeZnTe heterojunctions. (USSR) Photoelectric properties of ZnSe-ZnTe hereojunctlons are investigated at their excitation by ruby laser radmtion. The heterojunctlons have been formed by mozalc single crystals ZnSe films deposmted by vacuum evaporation on freshly cleaved (110) plane of ZnTe crystals L V Boehkareva et al, Ftz Tekh Polup, 6 (8), 1972, 1603-1604 (in
Russian) 30 838. Obtaining photographical images of surface of boundary of semiconductor with active gas medium. (USSR) Obtaining photographical images on surface of boundary of semiconductor with achve gas medium is described The method is based on gas photocorrosmn of thin polycrystalllne semlconductmg films of InSb with thickness of 0 5 to 1 5/~m in vapours of nitric acid The thin lnSb films have been evaporated on glass substrates. LG Paritskiy et al, Ftz Tekh Polup, 6 (7), 1972, 1400-1401 (in Russian) 30 839. The quantum size effect in thin CuI films with laminar structure. (USSR) Thickness dependence of optical density of Cu! thin films with laminar structure is measured. The films have been prepared by vacuum depositmn on amorphous substrates The measured dependences are explained by manifestation of the quantum size effect. L A Ageev ct al, Flz Tcerd Tela, 15 (9), 1973, 2794-2796 (in Russian) 3O 840. Electrostimulated inversion of photocondnctivity in heterojunction with colour centres. (USSR) Electrostimulated inversmn of photoconductiwty ms experimentally observed m heterojunctions based on CdO and NaCI films The NaCI films have been prepared by sublimation in vacuum 10 -6 torr on glass subtrates kept at 300°C. A E Glauberman et al, Fiz Trerd Tela, 14 (11) 1972, 3383-3386 (m
Russian). 30 841. Variations in mechanical stress in thin cadmium telluride films at photostimulated adsorption of oxygen. (USSR) Regularmes of varmtions in mechanical stress in CdTE films at adsorptmn and desorption of oxygen are investigated in darkness and dlummation in various spectral regions. Quasi-single crystal films of CdTe with thickness of 500 to 1000/~ have been prepared in vacuum 10 -8 torr on mica substrates heated to 150 to 220~C It is found that the effect of oxygen can be divided into reversible and irreversible changes connected with weakly and strongly bonded forms of adsorpuon The magnitude and sign of deformation depend on oxygen pressure m the system and on the wavelength of incident 284
light. The effect is supposed to be connected with changes in energy and charge states of lattice defects in CdTe films caused by adsorption and illumination. A I Vovsi and L P Strakbov, Fiz Tverd Tela, 14 (11 ), 1972, 3387-3390
(in Russian) 30 842. Phase transformations in thin gallium films obtained at lowtemperature condensation. (USSR) Temperatures of phase transformations in thin gallium films, obtained at condensation in vacuum 2 × 10 -7 tort on sapphire substrates kept at 5 to 7°K and 55~K, are investigated m dependence on film thickness B I Belevtsev and Yu F Komnik, Flz Trerd Tela, 14 (I 1), 1972, 324(L 3244 (In Russian) 30 843. Ferroelectric vacuum condensates of barium titanate thinner than 1000 A (USSR) Composition, structure and dielectric properties of barium titanate films with thickness of 100 to 5000 A, prepared by evaporatmn in vacuum on quartz substrates, are mvesugated Ferroelectrlc behaviour was observed at the films with thickness up to 230 A, An electrostatic model is presented for explanation of the thickness dependence on spontaneous polarization. Yu Ya Tomashpolskiy and M A Seveostyanov, Fiz Trerd Tela, 14 (9), 1972, 2686-2688 (m Russian) 30 844. Electrical resistivity and electron microscopical investigations of the mechanism of bismuth film growth. (USSR) Electric resistwity of thin bismuth films is measured during their growth at condensation in vacuum The results of measurement of thickness dependence of resistivity of BI films are compared with the observations of structure of BI films in an electron microscope V N Vigdorovich et al, Fiz Trerd Tela, 14 (9), 1972, 2744-2747 (in
Russian) 30 845. Optical phonons in amorphous films of arsenic chalcogenides. (USSR). Transmission infrared spectra of amorphous thin films of arsenic chalcogenides are investigated The thin films have been prepared by thermal evaporation in vacuum. V P Zakharov ct al, Ftz Tverd Tela, 14 (8), 1972, 2466-2468 (in
Russian). 30 846. Transformation amorphous phase--crystal in bismuth films with small thickness. (USSR) Thermal dependences of electrical resistivity of thin bismuth films, condensed in vacuum 1.5 • 10 -7 torr, is investigated It is found that in the regmn of phase transformatmn amorphous phasecrystal the electrical resistivity increases by 2 to 10 times in dependence on film thickness The thickness dependence of crystallization temperature is also studied. B I Belevtsev et al, Fiz Trerd Tela, 14 (7), 1972, 2177-2179 (m Russian) 30 847. Influence of plasma treatment on properties of low temperature SiP2 films. (USSR) Using the methods of infrared spectroscopy, the influence of treatment m high-frequency gas-discharge plasma on properties of $102 films, prepared by low temperature oxidation of tetraethoxysllane, =s investigated. L A Zhagata et al, lzc A N L a t v SSR Set Ftz Tekh Nauk, No 3, 1973, 18-24 (in Russian) 30 848. Investigation of morphology and growth mechanisms of crystals in antimony-selenium thin films. (USSR) Using the method of dlffractlon electron microscopy, the morphology and growth mechamsm of crystals in thin amorphous films of antimony-selenlum, prepared by evaporation of alloys in vacuum 10-5 torr on mica covered with carbon, are mvesugated I E Bolotov et al, Growth and Defects of Metalhc Crystals, Coil, Naak Durnka Kiev 1972, 104-107 (In Russian). 30 849. Maeroscopical pores in film structures metal-dielectric. (USSR) Porosity m the film system AI-SiO is investigated in dependence on film thickness, substrate temperature and condensation rate The
Classdied abstracts 850-864 obtained data indicate a diffusion-vacance mechanism of formation of through pores. G A Kurov et al, Mtkroelektromka, 2 (4), 1973, 344-350 (in Russian)
amorphous silicon were prepared by cathode sputtering in diode configuration with various deposition rates O Renner and J Zemek, Czech JPhys, B23 (11), 1973, 1273-1276.
30 850. An X-ray method for determination of orientation of thin single crystal films on substrate used for investigation of tantalum on sapphire. (Germany) An X-ray method was used for investigation of orientation of thin single crystal tantalum films with thickness of 1000 A evaporated on sapphire substrates kept at 1100 to 1150°C with the deposition rate of 60 A/min m vacuum of 10 -6 torr. S Meyer and H G Schneider, Krtst und Techn, 8 (1-3), 1973, 363-367
30 858. Determination of critical thickness of single crystal (001) nickel films. (USSR) Using the method of measurement of the magnetoresistance effects, crmcal thickness of single crystal (001) nickel films is determined, The films have been prepared by condensation in vacuum 10-5 torr on epltaxial LIF films deposited in vacuum on NaCI crystals V G Pynko et al, Fiz Tverd Tela, 15 (10), 1973, 3100 (m Russian). 30 859. Dissolution of silicon nitride films in phosphoric acid. (USSR) Regularities of dissolution of 813N4 films in HaPO4 are investigated. The sdtcon nitrlde films on Si plates have been synthetized of sllane and ammonia at 800°C to 1100°C at a total presure of I "." 10- t torr. V V Voskoboynnikov et al, Neorg Mater, 9 (10), 1973, 1831-1832 (m
(m German). 30 851. The processes of interaction of charged and neutral particles with solid surface at formation of thin films by methods of ion sputtering. (USSR) A physlco-mathemattcal model of the process of deposmon of thin films by cathodic sputtermg is presented. The model has been obtained on the basis of a statistical analysis of experimental data on the relations between external parameters of anomalous glow discharge and electro-physical properties of the films V P Belevskiy and Yu G Kononenko, Interacnon of Atomic Partwles in Sohds and on Sohd Surfaces, Coil, FAN Tashkent 1972, 105-113
(in Russian). 30 852. On change of charge of ions at their transmission through thin films. (USSR) The charge composition of Be, B, N and O ion at velooty of 8 × 108 cm/s and of N ion beam at velocity of 1.1 × 109 cm/s is investigated after their transmission through celluloid films with thickness from 0.8 to 10 #g/cm 2. I S Dmitriev et al, Interaction of Atomw Partwles in Sohds and on Sohd Surfaces, Coil, FAN Tashkent 1972, 114-118 (m Russian) 30 853. Preparation and physical properties of BiSeI thin films. (USSR) Thin BiSeI films have been prepared by the method of flash evaporauon of polycrystalline powder of starting material from a tantalum boat in vacuum 10 -4 torr on mica and glass substrates kept at temperatures ranging from 20 to 300cC. Using the X-ray methods, it ~s found that at evaporation on cold substrates and the evaporation rates below 30 A/see amorphous films are obtained. Electrical conductivity and optical properties of the prepared films are invest,gated. A P Zhdankin et al, Neor# Mater, 9 (11), 1973, 2057-2058 (in Russian). 30 854. Investigation of the order of sublattice substitution at formation of As2S3-As2Se3 films. (USSR) The results of investigation of infrared spectra and structure of shortrange order of thin amorphous films of As2Sa and As2Se3 and their mixtures are presented. The inves~tgated films have been prepared by thermal evaporation in vacuum 5 ~< 10 -6 torr. V P Zakharov et al, Neorg Mater, 9 (1 l), 1973, 1896-1899 (m Russian) 30 855. Electric conductivity and superconducting properties of thin mercury films. (USSR) Electric conductivity and superconducting properties of thin mercury films are investigated. The mercury films with thickness ranging from 0 to 1000 A have been prepared by evaporation in vacuum 10-8 torr on polished glass substrates kept at 2.3 to 4 2°K. V L Tsymbaleako and A I Shainikov, Zh Eksper Teor Ftz, 65 (5), 1973, 2086-2096 (in Russian). 30 856. Hysteresis in narrow superconducting bridges. (USSR) Volt-ampere characteristic of superconducting bridges are investigated. The bridges have been prepared by evaporation of Sn and lnSn through special masks on glass, quartz and sapphire substrates F Ya Nad and O Yu Polyanskiy, Radmtekh Elsktron, 18 (ll), 1973, 2445-2448 (m Russian). 3O 857. Density of amorphous silicon films. (Czechoslovakia) Density of as-deposited and annealed amorphous silicon films is measured using the method of total reflection of X-rays The films of
Russian). 30 860. Structure and some dielectric properties of strontium titauate thin films prepared by the method of cathode sputtering. (USSR) Using the method of X-ray analysis, structure of strontium titanate thin films IS invest=gated The strontium tltanate thin films have been prepared by cathode sputtering m air at pressure 6 × 10 - t torr Dielectric properties of the films are also studied. Dielectric strength as high as 500 kV/cm has been reached in the strontium tttanate films. N A Bulgakov et al, Neorg Mater, 9 (I 0), 1973, 1833-1834 (m Russian) 30 861. Electron-diffraction investigation of structure of the films of the system aluminium oxide-tungsten. (USSR) Using the method of transmission electron diffraction, phase composition and crystalline structure of AI2Oa films and of films of the system W-A1203 are investigated. The films have been prepared by thermal evaporation in vacuum 5 × l0 -6 torr and subsequent high temperature annealing. Alummium oxide m the thin films possesses two modifications: low-temperature (gamma) with a structure of defect spinel and high-temperature (alpha) with corundum structure. In the films of the system W-AlzOa no interaction between tungsten and alummlum oxide has been found K A Osipov et al, Neorg Mater, 9 (10), 1973, 1738-1740 (in Russian). 3O 862. The electrochemical method of investigation of reaction kinetics between aluminium and silicon monoxide films. (USSR) Using the electrochemical method, interaction between aluminium and silicon monoxide films is investigated. The samples have t:een prepared by subsequent condensation in vacuum 5 × 10 -6 torr of AI and SIO on dielectric substrates kept at 90 to 110°C. It ts shown that in the SiO-AI system the reaction kinetics is determined by diffusion of components. A E Gershinskiy et al, Neorg Mater, 9 (10), 1973, 1741-1743 (m
Russian). 30 863. Influence of composition of vapours on epitaxial growth of films in quasi-closed volume. (USSR) The influence of combined evaporation of CdTe ÷ Cd and CdTe + Te from two independent chambers in a quasi-closed volume on morphology and structure of epitaxial CdTe films is investigated It is found that the composition of gas phase strongly influences the morphology of epitaxtal CdTe films. In a quasi-closed volume at conditions near to equilibrium, the growth of CdTe films proceeds only in the stable cubic modIficauon and it does not depend on the deviauon of gas phase composmon from stolchlometry. Phase composition of epitaxial CdTe films is not determined by deviations of gas phase from stoichiometry, but it depends on thermodynamic condmons of film growth and nature and orientation of substrate Yu K Ezhovskly and I P Kalinkin, Neorg Mater, 9 (10), 1973, 16681672 (in Russian). 30 864. Electric and structural properties of low temperature bismuth films. (USSR) Temperature and thickness dependences of electrical resistance of low temperature bismuth films are mvesugated Structural properties of
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