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Experimental tests for Boson condensation and superconductivity in semiconductors during pulsed beam annealing
910
World Abstracts on Microelectronics and Reliability
Chip resistors gain support. RODERIC BERESFORD.Electronics 90 (17 November 1981). U.S. companies gear up to make the small, light thick-film devices, as a second domestic maker introduces an automatic insertion system. Thin film metallization studies and device lifetime prediction using AI-Si and AI-Cu--Si conductor test bars. KWAKU A. DANSO and LARRYTULLOS. Microelectron. Reliab. 21 (4), 513 (1981 ). Metallization failure in integrated circuits has been a problem in the semiconductor electronics industry since the advent of thin film technology. One of these problems is electromigration void formation and open metallization. Various techniques of solving the problem and methods of predicting lifetimes have been presented, but device lifetimes have not correlated well with experimental predictions. This is mainly because experimenters have in the past found it more feasible and economical to use short test stripes on a flat topology and stressed at extreme current densities and temperatures. In this work, AI-Si and AI-Cu-Si metallizations were fabricated to run over a topology similar to a typical double-poly N-channel MOS I.C., with numerous steps and contacts. It was found that the contacts and steps were more susceptible to metallization failures. However with process variation to improve step coverage, and also with Cu doping, an improvement in lifetime of 20 and 50
respectively could be obtained. A current density relationship of J - 1 7 ° was obtained, indicating that an error of about 56 times could be made, thereby underestimating device lifetime prediction if a value of j - 2 was assumed as is normally done.
Methods of synthesizing active filters with hybrid integrated circuits of the Tesla W Q U 011 type. JAROSLAV HRUBY and TOMAS Jog. TESLA Electronics 2, 35 (1981). The article explains the use of the TESLA W Q U 011 integrated circuit in the field of A.F. active selective circuits. It analyzes the basic building blocks respecting the real circuit characteristics and describes a circuit suitable for cascade synthesis with the pertinent design relations as well as a non-cascade synthesis using WQU 011 circuits. In conclusion the physical properties are described of a thick-film hybrid implementation of an integrated circuit containing a part of the filter passive net. Evaporated thin film RC filters. V. P. GUPTA, K. PAL and P. N. L. GUPTA. Microelectron. Reliab. 21 (4), 529 (1981). In this paper are presented some experimental results on a thin film R - C - N R structure (NiCr-SiO2-NiCr) in band-reject and band pass configurations. The investigations confirm the theoretical predictions reported earlier.
9. ELECTRON, ION AND LASER BEAMS Implanted p-channel MOS transistor threshold voltage dependence on impurity segregation during oxidation. ANDRZEJ A. CZERWINSKI and JAN Z. OLENSKI. Electron Technology 12 (4), 35 (1979). The influence of phosphorus segregation in the Si-SiO 2 interface region during thermal oxidation on p-channel MOS transistor threshold voltage is analyzed in the present paper. The case of boron implantation into originally uniformly doped n-type substrate performed after all high temperature processes to tailor the threshold voltage Ur is considered. It is shown that phosphorus segregation increases the sensitivity of threshold voltage to the changes of phosphorus bulk concentration in the substrate. Higher dose or energy of implanted ions is necessary in this case to produce the burried channel. The threshold voltage shift towards negative voltage values caused by substrate impurity segregation is demonstrated. Functional laser trimming of automotive electronics. JUNJ1 MITOBE and CHRIS DAVISON.Electrocomponent Sci. Technol. 8, 45 (1981). This paper discusses the use of laser trim systems for the trimming of automotive hybrids. Being high volume parts these devices are best trimmed in two stages; first, a passive trim of the resistor substrate and secondly, a functional trim. The requirements for such a functional trim are such as to demand a fully integrated system. Experimental tests for Boson condensation and superconductivity in semiconductors during pulsed beam annealing. J. A. VAN VECHTEN. Solid State Communications 39, 1285 (t981). Van Vechten and Compaan and, independently, Nagy and Noga have proposed that the high reflectivity state observed in pulsed laser/electron/ion beam annealing of Si and other semiconductors results when the electron-hole plasma created by the initial absorption of the ionizing radiation undergoes a boson condensation. The condensed state is described in the same form as the BCS superconductor and has many of the properties of the superconducting state. Lattice temperatures for the material during this phase have been measured by Raman scattering to lie in the range from 500 to 1000 K. At this writing no magnetic experiment has been completed to test this proposition further. In addition to the practical problems associated with such a test, there
are theoretical questions such as whether or not the bipolar plasma ought to be able to expel a magnetic field within the 100 ns or so that it persists in the proposed boson condensed phase. If not, it does not exhibit perfect diamagnetism and the Meissner effect. An experiment is proposed that is argued to be both easy to perform and to offer a conclusive demonstration of boson condensation. The proposed experiment involves observation of the single plasmon mode by diffraction or from the appearance of linear ripples left on the solid surface and the rotation of this pattern. Preliminary observations seem to confirm the condensation.
Ion implantation gettering; a fundamental approach. S. PRUSSIN.Solid State Technology 52 (July 1981 ). The use of ion implantation damage as a gettering technique is discussed. This operation has the capability of being easily introduced during the processing sequence. It can be applied to the back surface without protecting the front surface and it can use non-electrically active species which avoid problems of contamination associated with diffusion gettering operations. Concepts of point defect equilibria which are applicable to the understanding of gettering phenomena are reviewed. Fast electron-beam lithography. JOHN C. EIDSON. IEEE Spectrum 24 (July 1981). High blanking speeds may make this new system a serious challenger in producing submicrometer ICs. Typical applications of ion implanted layer as a diffusion source for MOS and bipolar devices. JANUSZ KRYLOW, ALEKSANDER BAKOWSKIand KRZYSZTOFSACZUK. Electron Technology 12 (4), 3 (1979). The paper presents experimental results on the application of ion implanted layer as a diffusion source for the preparation of base, emitter, isolation, and burried layer for bipolar linear and logic IC's. The experimental results on the preparation of source and drain regions from an implanted diffusion source in MOS IC's are also included. The post-implantation annealing was carried out in either dry or wet atmospheres. Current transport in an ion-implanted diode. Y. P. PAI and H. C. LIN. Solid-State Electronics 24 (10), 929 (1981). In a Schottky diode, the diode saturation current is controlled by
World Abstracts on Microelectronics and Reliability
Chip resistors gain support. RODERIC BERESFORD.Electronics 90 (17 November 1981). U.S. companies gear up to make the small, light thick-film devices, as a second domestic maker introduces an automatic insertion system. Thin film metallization studies and device lifetime prediction using AI-Si and AI-Cu--Si conductor test bars. KWAKU A. DANSO and LARRYTULLOS. Microelectron. Reliab. 21 (4), 513 (1981 ). Metallization failure in integrated circuits has been a problem in the semiconductor electronics industry since the advent of thin film technology. One of these problems is electromigration void formation and open metallization. Various techniques of solving the problem and methods of predicting lifetimes have been presented, but device lifetimes have not correlated well with experimental predictions. This is mainly because experimenters have in the past found it more feasible and economical to use short test stripes on a flat topology and stressed at extreme current densities and temperatures. In this work, AI-Si and AI-Cu-Si metallizations were fabricated to run over a topology similar to a typical double-poly N-channel MOS I.C., with numerous steps and contacts. It was found that the contacts and steps were more susceptible to metallization failures. However with process variation to improve step coverage, and also with Cu doping, an improvement in lifetime of 20 and 50
respectively could be obtained. A current density relationship of J - 1 7 ° was obtained, indicating that an error of about 56 times could be made, thereby underestimating device lifetime prediction if a value of j - 2 was assumed as is normally done.
Methods of synthesizing active filters with hybrid integrated circuits of the Tesla W Q U 011 type. JAROSLAV HRUBY and TOMAS Jog. TESLA Electronics 2, 35 (1981). The article explains the use of the TESLA W Q U 011 integrated circuit in the field of A.F. active selective circuits. It analyzes the basic building blocks respecting the real circuit characteristics and describes a circuit suitable for cascade synthesis with the pertinent design relations as well as a non-cascade synthesis using WQU 011 circuits. In conclusion the physical properties are described of a thick-film hybrid implementation of an integrated circuit containing a part of the filter passive net. Evaporated thin film RC filters. V. P. GUPTA, K. PAL and P. N. L. GUPTA. Microelectron. Reliab. 21 (4), 529 (1981). In this paper are presented some experimental results on a thin film R - C - N R structure (NiCr-SiO2-NiCr) in band-reject and band pass configurations. The investigations confirm the theoretical predictions reported earlier.
9. ELECTRON, ION AND LASER BEAMS Implanted p-channel MOS transistor threshold voltage dependence on impurity segregation during oxidation. ANDRZEJ A. CZERWINSKI and JAN Z. OLENSKI. Electron Technology 12 (4), 35 (1979). The influence of phosphorus segregation in the Si-SiO 2 interface region during thermal oxidation on p-channel MOS transistor threshold voltage is analyzed in the present paper. The case of boron implantation into originally uniformly doped n-type substrate performed after all high temperature processes to tailor the threshold voltage Ur is considered. It is shown that phosphorus segregation increases the sensitivity of threshold voltage to the changes of phosphorus bulk concentration in the substrate. Higher dose or energy of implanted ions is necessary in this case to produce the burried channel. The threshold voltage shift towards negative voltage values caused by substrate impurity segregation is demonstrated. Functional laser trimming of automotive electronics. JUNJ1 MITOBE and CHRIS DAVISON.Electrocomponent Sci. Technol. 8, 45 (1981). This paper discusses the use of laser trim systems for the trimming of automotive hybrids. Being high volume parts these devices are best trimmed in two stages; first, a passive trim of the resistor substrate and secondly, a functional trim. The requirements for such a functional trim are such as to demand a fully integrated system. Experimental tests for Boson condensation and superconductivity in semiconductors during pulsed beam annealing. J. A. VAN VECHTEN. Solid State Communications 39, 1285 (t981). Van Vechten and Compaan and, independently, Nagy and Noga have proposed that the high reflectivity state observed in pulsed laser/electron/ion beam annealing of Si and other semiconductors results when the electron-hole plasma created by the initial absorption of the ionizing radiation undergoes a boson condensation. The condensed state is described in the same form as the BCS superconductor and has many of the properties of the superconducting state. Lattice temperatures for the material during this phase have been measured by Raman scattering to lie in the range from 500 to 1000 K. At this writing no magnetic experiment has been completed to test this proposition further. In addition to the practical problems associated with such a test, there
are theoretical questions such as whether or not the bipolar plasma ought to be able to expel a magnetic field within the 100 ns or so that it persists in the proposed boson condensed phase. If not, it does not exhibit perfect diamagnetism and the Meissner effect. An experiment is proposed that is argued to be both easy to perform and to offer a conclusive demonstration of boson condensation. The proposed experiment involves observation of the single plasmon mode by diffraction or from the appearance of linear ripples left on the solid surface and the rotation of this pattern. Preliminary observations seem to confirm the condensation.
Ion implantation gettering; a fundamental approach. S. PRUSSIN.Solid State Technology 52 (July 1981 ). The use of ion implantation damage as a gettering technique is discussed. This operation has the capability of being easily introduced during the processing sequence. It can be applied to the back surface without protecting the front surface and it can use non-electrically active species which avoid problems of contamination associated with diffusion gettering operations. Concepts of point defect equilibria which are applicable to the understanding of gettering phenomena are reviewed. Fast electron-beam lithography. JOHN C. EIDSON. IEEE Spectrum 24 (July 1981). High blanking speeds may make this new system a serious challenger in producing submicrometer ICs. Typical applications of ion implanted layer as a diffusion source for MOS and bipolar devices. JANUSZ KRYLOW, ALEKSANDER BAKOWSKIand KRZYSZTOFSACZUK. Electron Technology 12 (4), 3 (1979). The paper presents experimental results on the application of ion implanted layer as a diffusion source for the preparation of base, emitter, isolation, and burried layer for bipolar linear and logic IC's. The experimental results on the preparation of source and drain regions from an implanted diffusion source in MOS IC's are also included. The post-implantation annealing was carried out in either dry or wet atmospheres. Current transport in an ion-implanted diode. Y. P. PAI and H. C. LIN. Solid-State Electronics 24 (10), 929 (1981). In a Schottky diode, the diode saturation current is controlled by