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Fabrication and characterization of GexAl1−x thin films
ABSTRACTS:FIRSTINTERNATIONALCONFERENCEON NANOSTRUCTUREDMATERIALS
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NANoSTRUCTURED MATERIALS VoL. 2, PP. 139-147, 1993
WET CHEMISTRY AND COMBUSTION SYNTHESIS OF NANOPARTICLES OF TiB2 R.L. Axelbaum,l S.E. Bates, 2 WE. Buhro,2 C. Frey, 1 K.F. Kelton,3 S.A. Lawton, 4 LJ. Rosenl and S.M. Sastryl Departments of Mechanical Engineeringl, Chemistry2 and Physics3 Washington University St. Louis, MO 63130 USA
McDonnell-Douglas Research Laboratories 4 St. Louis, MO 63112 USA Abstract----Two approaches for producing nanometer-sized TiB2particlesfor reinforcement in Ti/TiB2 composites are discussed: (1) gas-phase combustion synthesis and (2) low-temperature wet-chemical synthesis. The effectiveness of both techniques for producing nanosize particles of TiB2 is demonstrated. These methods will allow smaller particles to be produced for composite materials than are currently possible.
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NANoSTRUCTURED MATERIALS VOL. 2, PP. 149-156, 1993
FABRICATION AND CHARACTERIZATION OF GexAll.x THIN FILMS S. Ismat Shahl.2, M.M. Waite 2, B.A. Doelel, K.M. Unruh2 and Z. Lil 1E.I. du Pont de Nemours and Company, Central Research and Development Experimental Station, P.O. Box 80356, Wilmington, DE 19880-0356. 2Department of Physics and Aslronomy, University of Delaware, Newark, DE 19716. Abstracb-GexAl]_xfilms were prepared by co-sputtering Al and Ge targets in a dualmagnetron rf/dc sputtering system. Films with composition across the binary phase diagram were fabricated. Transmission electron microscopy and X-ray diffraction analyses of thefilms indicate a metastable single phase to an equilibrium two phase to a granular microstructure transition with the decrease in the Ge concentration. Nanostructured granular films were obtained at low Ge concentrations. The granular films have grain size ranging between 20 and 100 nm. XPS analyses indicate the presence of small amounts of oxygen in the films, perhaps from the residual gases in the system or from the targets, but only Al gets preferentially oxidized, especially at high AI concentrations. Ge, regardless of concentration, remains essentially in elemental form.
13.
509
NANoSTRUCTURED MATERIALS VoL. 2, PP. 139-147, 1993
WET CHEMISTRY AND COMBUSTION SYNTHESIS OF NANOPARTICLES OF TiB2 R.L. Axelbaum,l S.E. Bates, 2 WE. Buhro,2 C. Frey, 1 K.F. Kelton,3 S.A. Lawton, 4 LJ. Rosenl and S.M. Sastryl Departments of Mechanical Engineeringl, Chemistry2 and Physics3 Washington University St. Louis, MO 63130 USA
McDonnell-Douglas Research Laboratories 4 St. Louis, MO 63112 USA Abstract----Two approaches for producing nanometer-sized TiB2particlesfor reinforcement in Ti/TiB2 composites are discussed: (1) gas-phase combustion synthesis and (2) low-temperature wet-chemical synthesis. The effectiveness of both techniques for producing nanosize particles of TiB2 is demonstrated. These methods will allow smaller particles to be produced for composite materials than are currently possible.
14.
NANoSTRUCTURED MATERIALS VOL. 2, PP. 149-156, 1993
FABRICATION AND CHARACTERIZATION OF GexAll.x THIN FILMS S. Ismat Shahl.2, M.M. Waite 2, B.A. Doelel, K.M. Unruh2 and Z. Lil 1E.I. du Pont de Nemours and Company, Central Research and Development Experimental Station, P.O. Box 80356, Wilmington, DE 19880-0356. 2Department of Physics and Aslronomy, University of Delaware, Newark, DE 19716. Abstracb-GexAl]_xfilms were prepared by co-sputtering Al and Ge targets in a dualmagnetron rf/dc sputtering system. Films with composition across the binary phase diagram were fabricated. Transmission electron microscopy and X-ray diffraction analyses of thefilms indicate a metastable single phase to an equilibrium two phase to a granular microstructure transition with the decrease in the Ge concentration. Nanostructured granular films were obtained at low Ge concentrations. The granular films have grain size ranging between 20 and 100 nm. XPS analyses indicate the presence of small amounts of oxygen in the films, perhaps from the residual gases in the system or from the targets, but only Al gets preferentially oxidized, especially at high AI concentrations. Ge, regardless of concentration, remains essentially in elemental form.