Facet effect in epitaxial GaAs

Facet effect in epitaxial GaAs

Journal of Crystal Growth 3, 4 (1968) 225 © North-Holland Publishing Co., Amsterdam 225 FACET EFFECT IN EPITAXIAL GaAs R. C. CLARKE, B. D. JOYCE an...

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Journal of Crystal Growth 3, 4 (1968) 225 © North-Holland Publishing Co., Amsterdam

225

FACET EFFECT IN EPITAXIAL GaAs

R. C. CLARKE, B. D. JOYCE and J. B. MULLIN Ministry of Technology, R.R.E., Malvern, Worcs., England

The effect of facet development on the distribution of 25Te during the epitaxial growth of GaAs is described, ‘

region, are considered and discussed in relation to published work on impurity incorporation. The ex-

Autoradiographic evidence shows that marked changes occur in the 125Te distribution as a result of facet developmentfor all the singular surfaces { 111 } As, {TTT} Ga, { 11 O} and { 1OO}. Measurements of the average value of the facet ratio, that is the concentration of Te incorporated in the faceted region of growth to the concentration of Te incorporated in the non-faceted

perimental determination of the value of the facet ratio is affected by defect development; the most troublesome defects are growth pyramids which are prone to develop on facets. It is shown that the autoradiographic evidence of the Te-distribution also provides evidence on the mechanism of pyramid formation.

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