Accepted Manuscript Full Length Article Facile Synthesis of Reduced Graphene Oxide/Tungsten Disulfide/Tungsten Oxide Nanohybrids for High Performance Supercapacitor with Excellent Rate Capability Zhengchun Yang, Honghao Zhang, Bo Ma, Liqiang Xie, Yantao Chen, Zhihao Yuan, Kailiang Zhang, Jun Wei PII: DOI: Reference:
S0169-4332(18)32334-1 https://doi.org/10.1016/j.apsusc.2018.08.185 APSUSC 40222
To appear in:
Applied Surface Science
Received Date: Revised Date: Accepted Date:
5 June 2018 31 July 2018 21 August 2018
Please cite this article as: Z. Yang, H. Zhang, B. Ma, L. Xie, Y. Chen, Z. Yuan, K. Zhang, J. Wei, Facile Synthesis of Reduced Graphene Oxide/Tungsten Disulfide/Tungsten Oxide Nanohybrids for High Performance Supercapacitor with Excellent Rate Capability, Applied Surface Science (2018), doi: https://doi.org/10.1016/ j.apsusc.2018.08.185
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Facile Synthesis of Reduced Graphene Oxide/Tungsten Disulfide/Tungsten Oxide
Nanohybrids for High Performance Supercapacitor with Excellent Rate Capability Zhengchun Yanga,+, Honghao Zhanga,+, Bo Mab, Liqiang Xiea, Yantao Chenb,*, Zhihao Yuanb,*, Kailiang Zhanga and Jun Weia,c a
School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic &
Communication Devices, Tianjin University of Technology, Tianjin 300384, China b
School of Materials Science and Engineering, Tianjin Key Lab for Photoelectric Materials &
Devices, Tianjin University of Technology, Tianjin 300384, China c
Singapore Institute of Manufacturing Technology, Agency for Science, Technology and Research
(A*STAR),71 Nanyang Drive, 638075, Singapore
*Corresponding authors:
[email protected] (Y. Chen)
[email protected] (Z. Yuan)
+These authors contributed equally to this work.
Abstract
A facile synthesis strategy is developed for synthesizing nanohybrids of reduced graphene
oxide/tungsten disulfide/tungsten oxide (G/TS/TO). The as-prepared nanohybrids can effectively
combine the electrical double-layer capacitance and pseudo-capacitance when used as the
working electrode of supercapacitor. The specific capacitance value of the G/TS/TO-based working electrode is 148.5 mF cm-2 at current density of 0.1 mA cm-2 in the three-electrode setup.
Owing to the high electrical conductivity of tungsten oxide, large electrode/electrolyte interfaces
of tungsten disulfide and facile electron transfer as well as high surface area of reduced graphene
oxide, the G/TS/TO performs an excellent rate capability. A 90% capacitance retention after 3000
cycles of charge/discharge process is also obtained for the symmetrical all-solid-state
supercapacitor device fabricated by G/TS/TO. This study provides a new research strategy for
electrode materials based on tungsten-containing semiconductors in high rate capability
supercapacitors.
Keywords: tungsten disulfide; tungsten oxide; reduced graphene oxide; supercapacitor; rate
capability
1. Introduction
For the past two decades, supercapacitors have received considerable attention, owing to their
high power density, extremely long cycling life and fast charging/discharging rates, which are
desired by a wide spectrum of applications in load-leveling power sources, premium power
systems, fast switches, consumer electronics, battery-power operations and military devices [1-5].
Supercapacitors are broadly grouped into two types, depending on the charge storage
mechanisms. One mechanism is the electrical double-layered capacitor (EDLC),which is
common for materials with high specific surface area, such as mesoporous carbon [6, 7], carbon
nanotubes (CNTs) [8, 9], graphene [10-12] and so on. The other mechanism is the
pseudocapacitor, making use of the surface redox reaction of certain transitional metal oxides or
sulfides, such as ruthenium oxide (RuO2) [13-15], manganese dioxide (MnO2) [16-18], tungsten
disulfide (WS2) [19, 20], tungsten oxide [21, 22], and so on. In recent years, a large number of
studies have been conducted on the development of both types of supercapacitors. Although both
of the theoretical understanding and experimental fabrication have been made, the major
challenges are the poor overall performance, especially the poor rate capability and the high cost
of electrode materials, which have to be tackled in order to expand the applications of
supercapacitors [1, 3, 23, 24]. As a commonly used electrode material for EDLC, graphene has
attracted significant attention due to the high electrical conductivity and high theoretical specific surface area (2675 m2 g-1) [10, 25-27]. However, the generally reported specific capacitance of
graphene is lower than the theoretical value, which is attributed to the restacking of the graphene
sheets [28]. Thus, in order to improve the electrochemical performance of supercapacitors, the
graphene-based hybrids have been developed [5, 29-31]. Although the combination of EDLC and
pseudocapacitors can lead to improved performance in principle, the overall capacitance,
including the capacitance values and rate capability, reported so far for the graphene/transition
metal oxide hybrids is below the theoretical prediction. It would therefore be of great interest to
further investigate the novel hybrid structure consisting of graphene and transition metal oxide,
by developing new facile synthesis method and understanding the performance of
supercapacitors [32]. Since tungsten oxide is a highly electrical conductive n-type semiconductor
with different crystal structures for intercalation of ions [33, 34], the utilization of tungsten
oxide as the electrode material for supercapacitor draws research attention in recent years [33,
35-37]. In addition, as one of the most attractive two dimensional (2D) materials for the
electrochemical application, the 2D structure of WS 2 provides the abundant active sites and large
electrode/electrolyte interface for charge accumulation [38]. However, the poor electrical
conductivity, the restacking between the nanosheets of WS2 limits its applications in
supercapacitors [38].
Hence, a facile synthesis route to prepare the reduced graphene oxide/tungsten disulfide/tungsten
oxide nanohybrids as well as the supercapacitor properties are presented in this paper. The
combination of reduced graphene oxide (rGO) and WS2 is expected to prevent the restacking of
both graphene and WS2 for providing large electrode/electrolyte interfaces and minimizing the
volume variation during the electrochemical charge/discharge process, which will give rise to an
excellent rate capability [39, 40]. Moreover, the rGO and tungsten oxide would give rise to
improve the conductivity of the electrode, leading to an enhanced performance in supercapacitor
devices.
2. Experimental
2.1. Synthesis of rGO/tungsten disulfide/tungsten oxide (G/TS/TO) nanohybrids and tungsten
disulfide/tungsten oxide (TS/TO) control group
Graphene oxide (GO, 20 mg, Tianjin Plannano Energy Technologies Co. Ltd.) powder was
dispersed in 20 ml deionized (DI) water with the assistance of ultrasonication for 30 minutes to form a homogeneous suspension (1 mg ml-1). Ammonium tetrathiotungstate ((NH4)2WS4, 200
mg, Alfa Aesar) was well mixed with GO water suspension. The suspension was vigorously stirred for 30 minutes and then transferred into a vacuum oven set at 80 oC to evaporate the
solvent. The dried powder was placed in a tube furnace under Argon (Ar) atmosphere for thermal annealing. The furnace was heated with the rate of 10 oC⋅min-1 to 800 oC and maintained at 800 o
C for 1 hour. The furnace was then allowed to cool down to room temperature naturally and the
obtained powder is G/TS/TO nanohybrids. In order to demonstrate the role of rGO in the
nanohybrids, TS/TO is fabricated with the same procedure as before without GO.
2.2. Material Characterization
The scanning electron microscopy (SEM) was performed on an FEI Verios 460L with an
accelerating voltage of 2kV. The transmission electron microscopy (TEM), high-resolution
transmission electron microscopy (HRTEM), high angel annual dark field (HAADF) scanning
transmission electron microscopy (STEM) and elemental mapping were performed on an FEI
Talos F200X at 200kV. The Raman spectrum was conducted on a Horiba Evolution with 532 nm
laser source. The X-ray diffraction (XRD) patterns were recorded via a Rigaku SmartLab (9 kW)
with Cu Kβ radiation. The X-ray photoelectron spectroscopy (XPS) was conducted on a
ThermoFisher Scientific Escalab 250Xi. The nitrogen adsorption-desorption isotherms were
measured on a Quantachrome iQ-MP gas adsorption analyzer at 77K. The specific surface area
was calculated by Brunauer-Emmett-Teller (BET) method, and the pore size distribution was
calculated by applying density functional theory (DFT) on the adsorption and desorption data.
2.3. Electrochemical Measurement
Electrochemical performance of the as-prepared TS/TO and G/TS/TO as working electrodes in
supercapacitor was investigated. The working electrode was fabricated by coating the viscous
slurry of active materials (80 wt. %), carbon black (10 wt. %), and polyvinylidene fluoride (PVDF) (10 wt. %) in n-methyl pyrrolidone (NMP) onto a thin carbon paper with 1.51.1 cm2 area. After drying in a vacuum oven at 60 oC for 2 h, the as-prepared working electrodes were
tested for a series of electrochemical parameters, including the cyclic voltammetry (CV) and
galvanostatic charge/discharge, using both three-electrode and two-electrode setup on an
AMETEK VersaSTAT 3 Electrochemical System within the operation voltage of -1-0 V. In the
three-electrode system, potassium hydroxide (KOH) solution with 6.0 M concentration, Pt foil
and saturated calomel electrode (SCE) electrode were used as the electrolyte, counter electrode
and reference electrode, respectively. Moreover, the electrochemical impedance spectroscopy
(EIS) was conducted on an AMETEK VersaSTAT 3 Electrochemical System by sweeping the
frequency from 0.01 Hz to 100 kHz with the potential amplitude of 5 mV in the three-electrode
setup. In the two-electrode system, the two symmetric working electrodes were also tested by
using 6.0 M KOH solution as the electrolyte.
Furthermore, by using the same procedure as fabricating the working electrode, the symmetric
supercapacitor device was fabricated by using two working electrodes with G/TS/TO
nanohybrids as the active material. The gel electrolyte used within the symmetric supercapacitor
device was made from polyvinyl alcohol (PVA) and KOH. Typically, 4 g of PVA was dissolved into 50 mL DI water. After stirring under 95 oC until the solution became clear, the clear solution
was cooled down for further use. Moreover, 4 g KOH was dissolved into 50 mL DI water and
added into the as-prepared PVA solution under stirring. Finally, the syrupy gel electrolyte was
formed and pasted between the two working electrodes to complete the fabrication of symmetric
supercapacitor device. A series of electrochemical measurements of the final symmetric
supercapacitor device were performed, including the CV and galvanostatic charge/discharge by
using an AMETEK VersaSTAT 3 Electrochemical System within the operation voltage of -1-0 V,
while the cycling performance is evaluated by LAND CT2001A workstation.
3. Results and discussion
The fabrication process of G/TS/SO nanohybrids is displayed in Fig. 1. GO suspension (1 mg⋅ml-1) was obtained by dispersing 20 mg GO powder in DI water with the assistance of
ultrasonication. (NH4)2WS4 was added in the suspension with the concentration of 10 mg⋅ml-1.
The mixture was vigorously stirred and then placed in an oven with vacuum to remove the
solvent. The vacuum drying can facilitate the drying process by rapidly evaporating the solvents under negative pressure. The dried powder was placed in a heated tube furnace (800 oC) under
flowing Ar. The SEM is conducted to investigate the morphology of the nanohybrids, as shown
in Fig. 2a. Nanoparticles with size around 10~50 nm are distributed across the rGO sheets. TEM
was conducted to investigate the structure of the nanohybrids. In Fig. 2b, the nanoparticles were
decorated on the rGO sheets with very high density. Furthermore, HRTEM is performed on
G/TS/TO to reveal the structure of the nanoparticles on the rGO sheet (Fig. 2c). The
nanoparticles have lattice spacings of 0.38 nm and 0.27 nm, which are in good agreement with
(010) plane of WO2.72 and (100) plane of WS2, respectively [41, 42]. The STEM (Fig. 2d) and
elemental mapping (Fig. 2e) were performed on G/TS/TO to further reveal the structure and
elemental distribution of carbon (C), oxygen (O), sulfur (S) and tungsten (W). For comparison,
(NH4)2WS4 was dispersed in DI water alone, followed by vacuum drying and thermal annealing
under the same condition as G/TS/TO to fabricate TS/TO. As shown in Fig. S1 (Supplementary
Materials), TS/TO has a larger particle size than G/TS/TO, and there are no clear boundaries
between the particles in TS/TO, suggesting a sintering-like structure. The STEM and elemental
mapping of TS/TO were presented in Fig. S2. The STEM image further confirms that TS/TO has
a larger dimension than G/TS/TO.
The crystal structure and phase of G/TS/TO were investigated by XRD. The sharp peaks (Fig. 3a) at 23.6o and 48.2o, can be assigned to (010) and (020) planes of WO2.72 [43]. For TS/TO, the
diffraction peaks become sharper, suggesting TS/TO has a better crystallinity than G/TS/TO and
the presence of rGO may affect the crystallinity of G/TS/TO. The Raman spectrum (Fig. 3b) of G/TS/TO presents 7 peaks. The peak at 257 cm-1 corresponds to the O-W-O bending modes. The peaks at 704 cm-1 and 805 cm-1 can be assigned to the W-O stretching modes [44]. The peaks at 352 cm-1 and 417 cm-1 can be assigned to E2g and A1g vibration modes of WS2, respectively [45, 46]. The peaks at 1341 cm-1 and 1587 cm-1 correspond to the disorder-induced D band and
in-plane vibrational G band of carbon materials. The intensity ratio of D peak and G peak (I D/IG)
is determined as 1.22, suggesting the abundant defects in G/TS/TO. For comparison, the Raman
spectrum of TS/TO (Fig. S3) does not present the peaks of D and G bands, indicating the absence
of rGO. To compare the specific surface area of G/TS/TO and TS/TO, nitrogen
adsorption-desorption isotherms curves were displayed in Fig. 3c and identified as type IV. The values of the specific surface area for G/TS/TO and TS/TO are 71.988 m2g-1 and 4.39 m2g-1,
respectively, indicating the presence of rGO can effectively increase the surface area of G/TS/TO.
The DFT analysis (Fig. S4) suggests that G/TS/TO has a narrow distribution of mesopore size
(3-6 nm).
XPS analysis was carried out to characterize the elemental composition for better understanding
the structure of G/TS/TO. As shown in Fig. S5, four peaks corresponding to the binding energies
of W4f, S2p, C1s and O1s are labeled on the full survey XPS spectra of G/TS/TO. The XPS
spectra of W4f, S2p, O1s, together with the deconvolution results are presented in Fig. 4a-c. The W4+ (5p3/2 = 39.5 eV, 4f5/2 = 35 eV, 4f7/2 = 32.9 eV) peaks and S2- (2p1/2 = 163.7 eV, 2p3/2 = 162.5
eV) peaks demonstrate the presence of WS2 [47, 48]. The peaks located at 38 eV, 36.1 eV, and 41.5 eV correspond to the W6+ oxidation state [48]. The W5+ (4f7/2 = 34.1 eV, 4f5/2 = 36.4 eV)
peaks confirm the oxygen-deficient characteristics, indicating the formation of WO 2.72 [49, 50]. The peak at 530.6 eV corresponds to the O2- bonded to W, and the peak at 532.2 eV can be
assigned to the C-O bond or H-O bond [51].
The electrochemical performances of G/TS/TO and TS/TO as working electrodes in
supercapacitor are studied by using a three-electrode configuration. As shown in Fig. 5a, the CV
curves of TS/TO exhibit typical pseudocapacitive behavior in the potential range of -1-0 V at scan rates from 1 to 100 mVs-1, which demonstrate the electrochemical reactions in the as-tested
potential intervals between TS/TO and KOH electrolyte [28, 40]. In addition, due to the O
containing in the interface between WS2 and WO2.72, the charges could be stored in the pseudocapacitor via the redox reactions between W6+ and W4+ in the interface of WS2 and
WO2.72, as demonstrated in the redox reaction peaks in the CV curves in Fig. 5a [28, 40]. In addition, although the scan rate is increased from 1 to 100 mVs-1, the area of the CV curves increases and there are still diminished redox peaks at the scan rate of 100 mVs-1, which also
demonstrate that the working electrodes exhibit a desired capacitive behavior and excellent
electrochemical reversibility of Faradic reaction. The unobvious redox peak is caused by an
insufficient electrochemical reaction between the active material on the surface of the electrode
and the electrolyte as the scanning rate increases [38]. Moreover, as shown Fig. 5b, working
electrode fabricated by G/TS/TO nanohybrids combines the characteristics of both EDLC and pseudocapacitors in the potential range of -1-0 V at scan rates from 1 to 100 mVs-1. Comparing
the CV curves in Fig. 5b and a, at the lower scan rate, the redox reaction peaks are slightly
shifted to the positive direction, which can be attributed to the ions in the electrolyte diffusing
from the rGO layers into TS/TO interface to participate the redox reactions between WS2 and the
O in the WO2.72 and rGO. In addition, as the scan rate increases, the redox peaks are no longer
obvious, indicating there are more EDLC characteristics presented in the CV curves, which
further demonstrates that at higher scan rate, the ions in the electrolyte insufficiently diffuse from
the rGO layers into TS/TO interface, leading to an impeded redox reaction. The charges can be
accumulated at the rGO/electrolyte interface according to the EDLC storage mechanism at
higher scan rate [52]. In addition, the rGO in the working electrode made from G/TS/TO can
serve as the capacitive material for accumulating charges, as well as enhancing the conductivity
of the nanohybrids to facilitate the electron transfer throughout the nanohybrids, which would be
favorable for a higher specific capacitance [38]. As a result, as shown in the galvanostatic
charge/discharge behavior of the two types of working electrode under different current densities
in Fig. 5c and d, it is obvious that the capacitance of G/TS/TO is higher than that of TS/TO,
which indicates that the intimate contact between rGO and TS/TO can effectively improve the
electrochemical activity due to the enhanced electrical conductivity. According to Fig. 5c-d, and the equation of C = IΔt/(SΔV), where C (mFcm-2), S (cm2), I (mA), Δt (s), ΔV (V) represent the
as-calculated specific capacitance, area of working electrode, the current, time and operation
voltage during discharge process, respectively, the specific capacitance of the as-prepared
working electrodes under different current densities was calculated and shown in Fig. 5e. The specific capacitances of TS/TO are 103.1, 68.6, 51.4 and 46.2 mF cm-2 at 0.1, 0.2, 0.5, 1 mA cm-2, while the specific capacitances of G/TS/TO are 148.5, 120.4, 109.1 and 87.2 mF cm-2 at 0.1, 0.2, 0.5, 1 mA cm-2, respectively. The results indicated that the G/TS/TO nanohybrids has a higher
specific capacitance than TS/TO, which can be attributed to the excellent interfacial contact
between TS/TO and rGO, facile electron transfer and large specific surface area (see Fig. 3c).
These results agree well with the comparison between Fig. 5a and b. As shown in Fig. 5e, with
the increase of the testing current densities, the loss of the specific capacitance is 55 % for
TS/TO, while it is only 41% for G/TS/TO, indicating that the G/TS/TO has a better rate
capability. The rate capability, which is the specific capacitance retention from higher to lower
charging current densities, is an important parameter for the real applications of the
supercapacitors [2]. The G/TS/TO in this work displays an excellent rate capability (Table S1)
comparing with most of other similar hybrid structures, which can be attribute to the synergistic
effect from high electrical conductivity of WO2.72, large electrode/electrolyte interfaces of WS2
and facile electron transfer as well as high surface area of rGO. To study the resistive and
capacitive behavior of TS/TO and G/TS/TO, EIS analysis was performed and shown in Fig. 5f.
There are two distinct sections in the Nyquist plot, which is a semicircle at the high frequency
region and a relatively straight line in the low frequency region [40]. From the insertion part of
Fig. 5f, it can be concluded that the internal resistance of the TS/TO and G/TS/TO electrodes are 0.43 and 0.4 Ω, respectively, indicating that the internal resistance of G/TS/TO is slightly lower
than TS/TO. It can be seen from Fig. S6 that the charge transfer resistance (R 1) of TS/TO and G/TS/TO electrodes are 7.43 and 0.47 Ω, respectively, indicating that the charge transfer is
facilitated during electrochemical reaction for G/TS/TO, leading to a significant improvement in
electrochemical performance [53]. In addition, the almost straight line in the Nyquist plot of
impedance spectroscopy of G/TS/TO also indicated the excellent electrical conductivity of
G/TS/TO, leading to the enhanced specific capacitance in Fig. 5e [54].
To further evaluate the electrochemical performance of the as-prepared working electrodes in the
symmetrical supercapacitor devices, the electrochemical measurements of two-electrode setup of
TS/TO and G/TS/TO were shown in Fig. 6. In Fig. 6a and b, the CV curves of the working
electrodes measured in two-electrode setup exhibit a nearly rectangular shape at various scan
rates, which reveals the fast charge/discharge rate and ideal capacitive behavior [54, 55]. Since
entire voltammetric cycles, redox peaks are absent, which is different from the CV curves in Fig.
5a and b [54, 55]. Moreover, the rGO in the G/TS/TO nanohybrids give rise to the excellent
electrical conductivity, higher accessible surface area and additional EDLC characteristics, which
provides abundant ion adsorption, efficient ion intercalation/de-intercalation as well as facilitated
charge transfer. The comparison between Fig. 6c and d further confirmed the enhanced specific
capacitance of G/TS/TO nanohybrids. As calculated from galvanostatic charge/discharge
measurements in Fig. 6c and d, the specific capacitances of TS/TO in two-electrode setup are 21.3, 16.4, 13.8 and 12 mF cm-2 at 0.1, 0.2, 0.5, 1 mA cm-2, respectively, while the specific
capacitances of G/TS/TO in two-electrode setup are 36.4, 27.8, 23.2 and 20.5 mF cm-2 at 0.1, 0.2, 0.5, 1 mA cm-2, respectively. Thus, in Fig. 6e, the specific capacitance of G/TS/TO in a
symmetric two working electrode system is higher than that of TS/TO at each testing current
densities, which further indicates that the rGO in the nanohybrids would improve the
performance of supercapacitor. In order to understand the performance for energy density, the
ragone plot (Fig. 6f) is calculated based on the CV and galvanostatic charge/discharge results.
With a symmetric two working electrode system, the energy density of TS/TO varies from 0.003 to 0.001 mWhcm-2 with the power density varying from 0.05 to 0.5 mWcm-2. With a symmetric
two working electrode system, the energy density of G/TS/TO varies from 0.005 to 0.002 mWhcm-2 with the power density varying from 0.05 to 0.5 mWcm-2. These data further
demonstrate the enhanced capacitive performance of G/TS/TO nanohybrids within the aqueous
electrolyte.
According to the results in Fig. 6, a simple symmetrical all-solid-state supercapacitor device
based on G/TS/TO nanohybrids was assembled as shown in Fig. 7f. The PVA polymer-gel with
KOH was utilized as both separator and ionic electrolyte in as-fabricated supercapacitor device.
As shown in Fig. 7a, the CV curves of the supercapacitor device exhibit similar shape with that
in Fig. 6b, which reveals that there is no obvious change on the capacitive behavior by replacing
the aqueous electrolyte with gel electrolyte. The galvanostatic charge/discharge curves of the
as-prepared supercapacitor device in Fig. 7b were measured at different current densities,
revealing the fast charge/discharge rate and excellent capacitive behaviour [54, 55]. The areal
capacitances derived from Fig. 7b are shown in Fig. 7c, which are 25.0, 20.5, 14.5 and 7.2 mF cm-2 at 0.1, 0.2, 0.5, 1 mA cm-2, respectively. Comparing with the results in Fig. 6e, the slight
decrease of specific capacitance in Fig. 7c is attributed to the higher resistance of the gel
electrolyte. As shown in Fig. 7d, the energy density of the as-prepared supercapacitor device is 0.004 mWhcm-2 at a power density of 0.05 mWcm-2 while maintaining 0.001 mWhcm-2 at a power density of 0.5 mWcm-2, which is comparable to those previously reported results [54].
The cycling stability of the as-prepared supercapacitor device is evaluated by using the galvanostatic charge/discharge technique conducted at the current density of 0.5 mA cm-2. As
shown in Fig. 7e, the as-prepared supercapacitor device can retain 90% of the specific
capacitance after 3000 cycles of measurement, which demonstrates the excellent cycling stability.
In addition, the supercapacitor device could power a Light Emitting Diode (LED) group with 43
lights for 5 min, which is shown in the light digital photo in Fig. 7f, indicating the excellent rate
capability as the real application of the supercapacitor device
4. Conclusion
A facile synthesis strategy has been developed for preparing nanohybrids of rGO, WS2 and
WO2.72 by mixing, vacuum drying and annealing the mixture of GO and (NH4)2WS4. The
electrochemical performance of the as-prepared nanohybrids in supercapacitor is also
investigated. The overall supercapacitor performance of the working electrode fabricated by
G/TS/TO is better than that of TS/TO. As calculated from the galvanostatic charge/discharge
plots at each current density, the specific capacitance value of the G/TS/TO-based working
electrode is higher than that of the TS/TO-based working electrode. The EIS analysis indicates
the higher conductivity of G/TS/TO. An enhanced high-rate capability was observed for the
G/TS/TO-based working electrode and symmetrical all-solid-state supercapacitor device. Also, a
90% cycling stability retention after 3000 cycles of charge/discharge process were obtained for
the symmetrical all-solid-state supercapacitor device fabricated by G/TS/TO. The enhanced
electrochemical performance of the G/TS/TO-based supercapacitor is mainly due to the
synergistic
effect
originated
from
high
electrical
conductivity
of
WO2.72,
large
electrode/electrolyte interfaces of WS2 and facile electron transfer as well as high surface area of
rGO.
Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant No.
51702234 and 51502203), the Tianjin Young Overseas High-level Talent Plans (Grant No.
01001502), the Tianjin Science and Technology Foundation (Grant No. 17ZXZNGX00090) and
Tianjin Development Program for Innovation and Entrepreneurship.
Supplementary Materials
The SEM image, STEM image, elemental mapping and Raman spectrum of TS/TO, pore size
distribution and XPS survey spectra of G/TS/TO, the equivalent circuits for the Nyquist plots,
and table for comparison of rate capability of rGO/tungsten-based semiconductor nanohybrids
are included in the Supplementary Materials.
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Fig. 1. Schematic illustration of fabricating the G/TS/TO nanohybrids. GO and (NH 4)2WS4 are well mixed first and then dried under vacuum at 80 oC. The powder is annealed at 800 oC for 1
hour under Ar atmosphere.
Fig. 2 (a-d) SEM, TEM, HRTEM and STEM images of the as-prepared G/TS/TO nanohybrids.
(e) Elemental mapping of C, O, S and W in (d).
Fig. 3. (a) XRD patterns of G/TS/TO and TS/SO. (b) Raman spectrum of G/TS/TO. (c) Nitrogen
adsorption-desorption isotherms of G/TS/TO and TS/TO.
Fig. 4. (a) W4f and W5p, (b) S2p and (c) O1s XPS spectra obtained from the G/TS/TO sample.
Fig. 5. Electrochemical performance of the working electrodes in the three-electrode setup. CV
curves of the supercapacitor working electrode made of TS/TO (a) and G/TS/TO (b) under
different scan rates. Galvanostatic charge/discharge of the supercapacitor working electrodes
made of TS/TO (c) and G/TS/TO (d) under different current densities. Variation in specific
capacitance against different current densities (e) and EIS spectra (f) of the two types of
supercapacitor working electrodes.
Fig. 6. Electrochemical performance of the working electrodes in the two-electrode setup. CV
curves of the supercapacitor working electrode made of TS/TO (a) and G/TS/TO (b) under
different scan rates. Galvanostatic charge/discharge of the supercapacitor working electrodes
made of TS/TO (c) and G/TS/TO (d) under different current densities. Variation in specific
capacitance against different current densities (e) and the ragone plot (d) of the two types of
supercapacitor working electrodes.
Fig. 7. Electrochemical performance of the symmetric supercapacitor device fabricated by
G/TS/TO. (a) CV curves of the as-prepared symmetric supercapacitor device under different scan
rates. (b) Galvanostatic charge/discharge of the as-prepared symmetric supercapacitor device
under different current densities. Variation in specific capacitance against different current densities (c), the ragone plot (d), cycling performance at current density of 0.5 mA cm-2 (e) and
the digital photo of the charged LED light (f) by the as-prepared symmetric supercapacitor
device.
Graphical abstract
Highlights
Reduced graphene oxide/tungsten disulfide/tungsten oxide composite was synthesized
The supercapacitor based on the hybrids with high performance was fabricated
The synergistic effect from the hybrids generated excellent rate capability