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Growth and structure of rf-sputtered HgS films on NaCl
Classified abstracts 3488-3499 30 3488. Electron-trapping characteristics of W in SiOs. (USA) The electron-traooing characteristics of W in SiOl have been studied using evaporated-and ion-implanted W. The evaporated W results indicate a trapping cross section varying from 1.56 x lo-i4 to 4.62 x lo-i4 cm2 depending on the evaporation time. The cross section of the implanted W is 1.06 x IO-is cm2. Thermal-detrapping measurements indicate an activation energy of 0.9 eV, whereas optical detrapping is not observed for light energies up to 6 eV. It is not understood why there is this large discrepancy of results. It is also interesting to note that Powell and Beairsto measured a barrier height of 3.6 eV for the W-SiO1 interface. D R Young et al, J Appl Phys, 48 (8), 1977,3425-3427. 30 3489. Kinetics of thin-film reactions between Pb and the AgPd alloy.
(USA)
Thin-film reaction between Pb and the Ag-20 at. % Pd alloy in the temoerature range 160-200°C has been studied by X-ray diffraction. The’ reaction re<s in the formafion of the P&Pd compound by depleting Pd from the alloy. The rate of depletion is too fast to be explained by lattice diffusion in the alloy at these temperatures. In fact, it is shown that the intermixing of Ag and Pd to form the alloy by lattice diffusion can only occur around 450°C. On the other hand, grain-boundary diffusion is faster, but it is not obvious how Pd atoms within the alloy grains can be depleted by grain-boundary diffusion. To overcome this difficulty, a kinetic model with a moving interface has been developed to explain the low-temperature reaction. The model seems to agree quite well with the experimental results. K N Tu, J Appl Phys, 48 (8), 1977,3400-3404. 30 3498. Electron-beam evaporator. (USSR) Construction of an electron beam evaporator for deposition of refractory materials in a system for manufacture of thin-film components is described. The deposition rate for Fe, Ni, Co and their alloys varies in the range of 1 to 15 A/s. V Yu Yakovchuk et al, Prib Tekh Eksper, No 1,1976,241 (in Russinn). 30 3491. The mechanism of current transport in systems metal-insulatormetal with vanadium-phosphate glass. (USSR) Volt-ampere characteristics and temperature dependence of electrical conductivity are investigated in the metal-vanadium-phosphate glass-metal systems. The glass films have been prepared by flash evaporation at continuous supply of evaporating material in a vacuum of 10m5 torr. It is supposed that current transport in glass films is provided by small-radius polarons. V I Gaman et al, Zzv VUZ Fiz, No 2, 1976, 107-l 15 (in Russian). 30 3492. ThinGhn field-effect triode based on selenium with anomalously high photoconductivity. (USSR) Characteristics of a thin-film field-effect transistor are described. The transistor has been manufactured by evaporation in a vacuum of 5 x lo-’ torr of Pd electrodes and selenium film on organic glass substrate. The selenium with anomalously high photoconductivity was deposited with the rate of 20 A/s at substrate temperature 50°C and was treated in mercury vapours. The transistor can be controlled by both electric field and illumination. M I Korsunskir and A P Tvschenko. Fiz Tekh Poluo. -, 10 (2). .I, 1976.I 376-319 (in R&ion). ‘ 30 3493. Optical absorption in films of V,O, and vanadium-phosphate glass. (USSR) The results of investigation of spectral dependences of the absorption coefficient of amorphous and polycrystalline V205 films and vanadium-phosphate glass films in the energy range from 0.3 to 3 eV are presented. The films have been prepared in a vacuum of 10m5 torr by flash evporation from tantalum boat at continuous supply of evaporating material on quartz and freshly cleaved KBr substrates. E F Ryannel et al, Zzv VUZ Fiz, No 2, 1976, 102-106 (in Russian). 30 3494. Direct current conductivity of copper phtalocyanine films in the presence of blocking contacts. (Germany) It is shown that the presence of blocking contacts affects the direct current characteristics of the Al-PcCu-Al structures. The specimens 156
have been prepared by successive thermal evaporation of Al, PcCu and Al in a vacuum of 10m5 torr on ceramic substrate. Measurements were carried out in a vacuum of 10s4 torr. Yu A Vidadi et al, Phys Status Solidi (a), 33 (1). 1976, K67-K71. 30 3495. Amorphous Ge alloy films. II Transport properties. (Germany) The electrical resistivity, its frequency and temperature dependence and the thermoelectric power and its temperature dependence are studied in amorphous Ge alloy films. The homogeneous amorphous Ge alloy films with stable, reproducible and widely varying electrical properties have been prepared by co-deposition of Ge with different metallic elements. The electrical resistivity of Ge-Al films decreases gradually with increasing Al content. In contrast, the electrical resistivity of Ge-Cu and GeFe films decreases rapidly with increasing concentration of the alloying element. The temperature dependence of the electrical resistivity of GeAI films indicates that, with increasing concentration of Al in Ge, the hopping conduction is appreciably reduced. In the case of Ge-Cu and Ge-Fe films, the activation energy of conduction decreases at all temperatures. Ge-AI films exhibit large positive thermoelectric power. In contrast, Ge-Cu and Ge-Fe films exhibit small values of thermoelectric power. (India) K L Chopra and P Nath, Phys Status Solidi (u), 33 (l), 1976,333-344. 31. SPUTTERING
31 3496. Growth and structure of &puttered HgS films on NaCI. (USA) The growth and structure of rf-sputtered HgS on NaCl substrates mainly at room temperature have been examined by electron diffraction and transmission electron microscopy. Very thin films (-20 A thick) on air-cleaved (001) substrates -were epitaxially grown in B-H&l (001). B-HI-& (111) and a-H& (00.1) orientations. The films on &-&ea;kh (130) ‘and polished-(1 11) substrates were basically polycrystalline fl-HgS and partially grown in parallel orientation to the substrate surfaces. As the film thickness increased to more than approximately 200 A, a-HgS layers started to grow on the /3-HgS films, producing < 11 1> streaks and many extra reflections in the diffraction patterns. a-HgS films approximately 2OOOA thick had (10.2), (11.0) and (20.7), and (00.1) and (10.1) orientations in the cases where (OOl), (110) and (111) NaCl substrates were used. These orientations are discussed by using a growth model of which a-HgS layers were grown on the
(USA)
Thin-film reaction between Pb and the Ag-20 at. % Pd alloy in the temoerature range 160-200°C has been studied by X-ray diffraction. The’ reaction re<s in the formafion of the P&Pd compound by depleting Pd from the alloy. The rate of depletion is too fast to be explained by lattice diffusion in the alloy at these temperatures. In fact, it is shown that the intermixing of Ag and Pd to form the alloy by lattice diffusion can only occur around 450°C. On the other hand, grain-boundary diffusion is faster, but it is not obvious how Pd atoms within the alloy grains can be depleted by grain-boundary diffusion. To overcome this difficulty, a kinetic model with a moving interface has been developed to explain the low-temperature reaction. The model seems to agree quite well with the experimental results. K N Tu, J Appl Phys, 48 (8), 1977,3400-3404. 30 3498. Electron-beam evaporator. (USSR) Construction of an electron beam evaporator for deposition of refractory materials in a system for manufacture of thin-film components is described. The deposition rate for Fe, Ni, Co and their alloys varies in the range of 1 to 15 A/s. V Yu Yakovchuk et al, Prib Tekh Eksper, No 1,1976,241 (in Russinn). 30 3491. The mechanism of current transport in systems metal-insulatormetal with vanadium-phosphate glass. (USSR) Volt-ampere characteristics and temperature dependence of electrical conductivity are investigated in the metal-vanadium-phosphate glass-metal systems. The glass films have been prepared by flash evaporation at continuous supply of evaporating material in a vacuum of 10m5 torr. It is supposed that current transport in glass films is provided by small-radius polarons. V I Gaman et al, Zzv VUZ Fiz, No 2, 1976, 107-l 15 (in Russian). 30 3492. ThinGhn field-effect triode based on selenium with anomalously high photoconductivity. (USSR) Characteristics of a thin-film field-effect transistor are described. The transistor has been manufactured by evaporation in a vacuum of 5 x lo-’ torr of Pd electrodes and selenium film on organic glass substrate. The selenium with anomalously high photoconductivity was deposited with the rate of 20 A/s at substrate temperature 50°C and was treated in mercury vapours. The transistor can be controlled by both electric field and illumination. M I Korsunskir and A P Tvschenko. Fiz Tekh Poluo. -, 10 (2). .I, 1976.I 376-319 (in R&ion). ‘ 30 3493. Optical absorption in films of V,O, and vanadium-phosphate glass. (USSR) The results of investigation of spectral dependences of the absorption coefficient of amorphous and polycrystalline V205 films and vanadium-phosphate glass films in the energy range from 0.3 to 3 eV are presented. The films have been prepared in a vacuum of 10m5 torr by flash evporation from tantalum boat at continuous supply of evaporating material on quartz and freshly cleaved KBr substrates. E F Ryannel et al, Zzv VUZ Fiz, No 2, 1976, 102-106 (in Russian). 30 3494. Direct current conductivity of copper phtalocyanine films in the presence of blocking contacts. (Germany) It is shown that the presence of blocking contacts affects the direct current characteristics of the Al-PcCu-Al structures. The specimens 156
have been prepared by successive thermal evaporation of Al, PcCu and Al in a vacuum of 10m5 torr on ceramic substrate. Measurements were carried out in a vacuum of 10s4 torr. Yu A Vidadi et al, Phys Status Solidi (a), 33 (1). 1976, K67-K71. 30 3495. Amorphous Ge alloy films. II Transport properties. (Germany) The electrical resistivity, its frequency and temperature dependence and the thermoelectric power and its temperature dependence are studied in amorphous Ge alloy films. The homogeneous amorphous Ge alloy films with stable, reproducible and widely varying electrical properties have been prepared by co-deposition of Ge with different metallic elements. The electrical resistivity of Ge-Al films decreases gradually with increasing Al content. In contrast, the electrical resistivity of Ge-Cu and GeFe films decreases rapidly with increasing concentration of the alloying element. The temperature dependence of the electrical resistivity of GeAI films indicates that, with increasing concentration of Al in Ge, the hopping conduction is appreciably reduced. In the case of Ge-Cu and Ge-Fe films, the activation energy of conduction decreases at all temperatures. Ge-AI films exhibit large positive thermoelectric power. In contrast, Ge-Cu and Ge-Fe films exhibit small values of thermoelectric power. (India) K L Chopra and P Nath, Phys Status Solidi (u), 33 (l), 1976,333-344. 31. SPUTTERING
31 3496. Growth and structure of &puttered HgS films on NaCI. (USA) The growth and structure of rf-sputtered HgS on NaCl substrates mainly at room temperature have been examined by electron diffraction and transmission electron microscopy. Very thin films (-20 A thick) on air-cleaved (001) substrates -were epitaxially grown in B-H&l (001). B-HI-& (111) and a-H& (00.1) orientations. The films on &-&ea;kh (130) ‘and polished-(1 11) substrates were basically polycrystalline fl-HgS and partially grown in parallel orientation to the substrate surfaces. As the film thickness increased to more than approximately 200 A, a-HgS layers started to grow on the /3-HgS films, producing < 11 1> streaks and many extra reflections in the diffraction patterns. a-HgS films approximately 2OOOA thick had (10.2), (11.0) and (20.7), and (00.1) and (10.1) orientations in the cases where (OOl), (110) and (111) NaCl substrates were used. These orientations are discussed by using a growth model of which a-HgS layers were grown on the