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Heteroepitaxial semiconductors for electronic devices
Books Review
Heteroepitaxial Semiconductors for Electronic Devices. Editors: G.W. Cullen, C.C. Wang. Springer-Verlag, Berlin, 1978. 246 figures. Approx. 400 pages. Cloth DM 158; US $ 79.00. The advancement of various technologies has led to the development of single crystal thin films, which have properties ideal for device application. Among the heteroepitaxial material composite examined in this new book are silicon, III-V compounds and alloys, and II-VI compounds on sapphire, spinel, and other refractory oxide substrates. Chapter 1 (by G.W. Cullen and C.C. Wang) is a brief overview of the technology discussed in this book. In Chapters 2, 3 and 4 (The Preparation and Properties of Heteroepitaxial Silicon, by G.W. Cullen; Heteroepitaxial Growth and Characterization of Compound Semiconductors, by C.C. Wang; The Preparation and Properties of III-V and II-VI Compounds for Surface Acoustic Wave and Integrated Optic Devices, by M.T. Duffy), the development of the preparative techniques for the various heteroepitaxial materials and the results and conclusions drawn from characterization are discussed. Current and potential applications in device structures, and some of the material aspects of device processing are outlined. Included in Chapter 2 is a discussion of the selection of substrate materials, the growth of single crystals, the shaping of single crystals into the substrate geometry, and the methods used to remove the surface work damage. This discussion was intended to serve all three of the preparative chapters, and therefore, the sections on substrate preparation in Chapters 3 and 4 are brief. In Chapter 5 (Characterization of Heteroepitaxial Thin Film Semi-
220 conductors on Insulating Substrates, by P.J. Zanzucchi), the characterization of the thin films is discussed, with emphasis on the problems encountered in the chemical and physical (crystallographic) methods. In Chapter 6 (The Electrical Characterization of Heteroepitaxial Semiconducting Films, by W.E. Ham), the electrical characterization specific to the nature of the thin heteroepitaxial silicon films is treated in some detail. A model is also presented of current transport through crystallografic-imperfect heteroepitaxial silicon. The discussion of gas-flow dynamics and the development and application of a general model are presented in Chapter 7 (An Analysis of the Gas Flow Dynamics in a Horizontal CVD Reactor, by S. Berkman, V.S. Ban and N. Goldsmith). Finally, some general comments are given in Chapter 8 (Misfit, Strain and Dislocations in Epitaxial Structures: Si/Si, Ge/Si, Si/A1203, by J. Blanc) on the current state of understanding of crystallography misfits at the deposit/substrate interfaces. The Authors of the individual chapters in this volume are associates at the RCA Laboratories. Their intent has been to describe the course of development of the technology and the present capabilities rather than to construct a comprehensive review of all the work done. From this point of view, the book will be an invaluable source of information for graduate students and professionals involved in the preparation, characterization, and utilization of electronically active materials in industry.
Crystals as Giant Molecules. By A. Julg, Springer Verlag, Berlin-Heidelberg-New York, 1978, VII, 135 pages. Soft cover DM 18; ca. US $ 9.00.
This book (Lecture Notes in Chemistry; vol. 9) is an essay of a unitary theory of the molecular and crystalline structure. After a brief introduction to the more or less localized molecular orbitals, and atomic orbital hybridization concepts, the author presents an original structural classification of the crystals, based on the molec-
Heteroepitaxial Semiconductors for Electronic Devices. Editors: G.W. Cullen, C.C. Wang. Springer-Verlag, Berlin, 1978. 246 figures. Approx. 400 pages. Cloth DM 158; US $ 79.00. The advancement of various technologies has led to the development of single crystal thin films, which have properties ideal for device application. Among the heteroepitaxial material composite examined in this new book are silicon, III-V compounds and alloys, and II-VI compounds on sapphire, spinel, and other refractory oxide substrates. Chapter 1 (by G.W. Cullen and C.C. Wang) is a brief overview of the technology discussed in this book. In Chapters 2, 3 and 4 (The Preparation and Properties of Heteroepitaxial Silicon, by G.W. Cullen; Heteroepitaxial Growth and Characterization of Compound Semiconductors, by C.C. Wang; The Preparation and Properties of III-V and II-VI Compounds for Surface Acoustic Wave and Integrated Optic Devices, by M.T. Duffy), the development of the preparative techniques for the various heteroepitaxial materials and the results and conclusions drawn from characterization are discussed. Current and potential applications in device structures, and some of the material aspects of device processing are outlined. Included in Chapter 2 is a discussion of the selection of substrate materials, the growth of single crystals, the shaping of single crystals into the substrate geometry, and the methods used to remove the surface work damage. This discussion was intended to serve all three of the preparative chapters, and therefore, the sections on substrate preparation in Chapters 3 and 4 are brief. In Chapter 5 (Characterization of Heteroepitaxial Thin Film Semi-
220 conductors on Insulating Substrates, by P.J. Zanzucchi), the characterization of the thin films is discussed, with emphasis on the problems encountered in the chemical and physical (crystallographic) methods. In Chapter 6 (The Electrical Characterization of Heteroepitaxial Semiconducting Films, by W.E. Ham), the electrical characterization specific to the nature of the thin heteroepitaxial silicon films is treated in some detail. A model is also presented of current transport through crystallografic-imperfect heteroepitaxial silicon. The discussion of gas-flow dynamics and the development and application of a general model are presented in Chapter 7 (An Analysis of the Gas Flow Dynamics in a Horizontal CVD Reactor, by S. Berkman, V.S. Ban and N. Goldsmith). Finally, some general comments are given in Chapter 8 (Misfit, Strain and Dislocations in Epitaxial Structures: Si/Si, Ge/Si, Si/A1203, by J. Blanc) on the current state of understanding of crystallography misfits at the deposit/substrate interfaces. The Authors of the individual chapters in this volume are associates at the RCA Laboratories. Their intent has been to describe the course of development of the technology and the present capabilities rather than to construct a comprehensive review of all the work done. From this point of view, the book will be an invaluable source of information for graduate students and professionals involved in the preparation, characterization, and utilization of electronically active materials in industry.
Crystals as Giant Molecules. By A. Julg, Springer Verlag, Berlin-Heidelberg-New York, 1978, VII, 135 pages. Soft cover DM 18; ca. US $ 9.00.
This book (Lecture Notes in Chemistry; vol. 9) is an essay of a unitary theory of the molecular and crystalline structure. After a brief introduction to the more or less localized molecular orbitals, and atomic orbital hybridization concepts, the author presents an original structural classification of the crystals, based on the molec-